JP2006105951A - 欠陥検査方法 - Google Patents
欠陥検査方法 Download PDFInfo
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- JP2006105951A JP2006105951A JP2004322905A JP2004322905A JP2006105951A JP 2006105951 A JP2006105951 A JP 2006105951A JP 2004322905 A JP2004322905 A JP 2004322905A JP 2004322905 A JP2004322905 A JP 2004322905A JP 2006105951 A JP2006105951 A JP 2006105951A
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- 230000007547 defect Effects 0.000 title claims abstract description 51
- 238000007689 inspection Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005286 illumination Methods 0.000 claims abstract description 32
- 238000003384 imaging method Methods 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims description 80
- 239000010410 layer Substances 0.000 abstract description 49
- 230000003287 optical effect Effects 0.000 abstract description 29
- 239000002344 surface layer Substances 0.000 abstract description 13
- 230000010287 polarization Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003252 repetitive effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95692—Patterns showing hole parts, e.g. honeycomb filtering structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N2021/9513—Liquid crystal panels
Abstract
最上層のパターン、特にホールパターンの検査を、高いS/N比で行うことができる欠陥検査装置を提供する。
【解決手段】
照明光L1によって照明されたウエハ2からは回折光L2が生じ、受光光学系4に導かれて集光され、回折光L2によるウエハ2の像を本発明の撮像手段としての撮像素子5上に結像する。画像処理装置6は、撮像素子5で取り込んだ画像の画像処理を行って、欠陥を検出する。偏光板7は、照明光L1がS偏光でウエハ2を照明するし、かつその振動面とウエハ2のとの交線がウエハ2に形成された配線パターンと平行、又は直交するようにされ、偏光板8はウエハ2からの回折光のうちP偏光の直線偏光を取り出すように調整されている。こうすることでホールパターンの検査を、その下に存在する配線パターンと区別して検査することが可能になり、表層の欠陥をS/N比の良い状態で検査することができる。
【選択図】 図3
Description
aP<a<aS
bP>b>bS
となる。よって、S偏光を用いることにより、表層表面で反射される光量を相対的に大きくすることができ、下地の影響を受けないで表面の検査を行うことができる。
なお、偏光板7は照明光学系でなく受光光学系に挿入し、受光する回折光からP偏光の成分を取り出しても、照明光学系に偏光板を挿入した時と同様の効果を得られる。
Claims (5)
- 被検査体である基板の表面欠陥を検査する方法であって、前記基板をP偏光の直線偏光の照明光で照明し、前記基板からの回折光による前記基板の像を撮像し、撮像した画像を処理して前記基板の欠陥を検出することを特徴とする欠陥検査方法。
- 被検査体である基板の表面欠陥を検査する方法であって、前記基板を照明光で照明し、前記基板からの回折光に含まれるP偏光の直線偏光による前記基板の像を撮像し、撮像した画像を処理して前記基板の欠陥を検出することを特徴とする欠陥検査方法。
- 請求項1又は請求項2に記載の欠陥検査方法を使用して、基板の表面に形成されたホールパターンの欠陥を検出することを特徴とするホールパターンの検査方法。
- 被検査体である基板の表面に形成されたパターンの欠陥を検査する方法であって、前記基板を、振動面と前記基板との交線が前記ホールパターンとは異なる層に形成された配線パターンに平行又は垂直なS偏光の直線偏光で照明し、前記基板からの回折光に含まれるS偏光の直線偏光を除去した残りの光を用いて前記基板の像を撮像し、撮像した画像を処理して前記基板の欠陥を検出することを特徴とする欠陥検査方法。
- 被検査体である基板の表面に形成されたホールパターンの欠陥を検査する方法であって、前記基板を、振動面と前記基板との交線が前記ホールパターンとは異なる層に形成された配線パターンに平行又は垂直なP偏光の直線偏光で照明し、前記基板からの回折光に含まれるP偏光の直線偏光を除去した残りの光を用いて前記基板の像を撮像し、撮像した画像を処理して前記基板の欠陥を検出することを特徴とする欠陥検査方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004322905A JP4901090B2 (ja) | 2004-10-06 | 2004-10-06 | 欠陥検査方法及び欠陥検出装置 |
CNA2005101133586A CN1758022A (zh) | 2004-10-06 | 2005-09-28 | 缺陷检查方法 |
KR1020050093138A KR20060052010A (ko) | 2004-10-06 | 2005-10-04 | 결함 검사 방법 |
US11/243,425 US7643137B2 (en) | 2003-03-26 | 2005-10-05 | Defect inspection apparatus, defect inspection method and method of inspecting hole pattern |
TW094134913A TW200626888A (en) | 2004-10-06 | 2005-10-06 | Defect inspection method |
US12/591,298 US8446578B2 (en) | 2003-03-26 | 2009-11-16 | Defect inspection apparatus, defect inspection method and method of inspecting hole pattern |
KR1020120021482A KR101275343B1 (ko) | 2004-10-06 | 2012-02-29 | 결함 검사 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004322905A JP4901090B2 (ja) | 2004-10-06 | 2004-10-06 | 欠陥検査方法及び欠陥検出装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011023349A Division JP5287891B2 (ja) | 2011-02-04 | 2011-02-04 | 欠陥検査方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006105951A true JP2006105951A (ja) | 2006-04-20 |
JP2006105951A5 JP2006105951A5 (ja) | 2007-10-18 |
JP4901090B2 JP4901090B2 (ja) | 2012-03-21 |
Family
ID=36375851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004322905A Active JP4901090B2 (ja) | 2003-03-26 | 2004-10-06 | 欠陥検査方法及び欠陥検出装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4901090B2 (ja) |
KR (2) | KR20060052010A (ja) |
CN (1) | CN1758022A (ja) |
TW (1) | TW200626888A (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007129475A1 (ja) * | 2006-05-10 | 2007-11-15 | Nikon Corporation | 表面検査装置 |
WO2007139225A1 (ja) * | 2006-06-01 | 2007-12-06 | Nikon Corporation | 表面検査装置 |
WO2008007614A1 (fr) * | 2006-07-14 | 2008-01-17 | Nikon Corporation | Appareil d'inspection de surface |
WO2009125805A1 (ja) * | 2008-04-09 | 2009-10-15 | 株式会社ニコン | 表面検査方法および表面検査装置 |
JP2009300216A (ja) * | 2008-06-12 | 2009-12-24 | Nikon Corp | 観察装置 |
JP2010503862A (ja) * | 2006-09-12 | 2010-02-04 | ルドルフテクノロジーズ インコーポレイテッド | 偏光撮像 |
JP2010117324A (ja) * | 2008-11-14 | 2010-05-27 | Nikon Corp | 表面検査方法および表面検査装置 |
WO2010095420A1 (ja) * | 2009-02-18 | 2010-08-26 | 株式会社ニコン | 表面検査装置および表面検査方法 |
US8012537B2 (en) | 2004-11-09 | 2011-09-06 | Global Oled Technology Llc | Controlling the vaporization of organic material |
WO2012081587A1 (ja) * | 2010-12-14 | 2012-06-21 | 株式会社ニコン | 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス |
JP2015141022A (ja) * | 2014-01-27 | 2015-08-03 | 株式会社ニコン | 評価方法、評価装置、及び露光システム |
Families Citing this family (5)
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KR101467010B1 (ko) * | 2007-06-13 | 2014-12-01 | 가부시키가이샤 니콘 | 검사 장치, 검사 방법 및 프로그램 |
KR101237583B1 (ko) * | 2007-10-23 | 2013-02-26 | 시바우라 메카트로닉스 가부시키가이샤 | 촬영 화상에 기초한 검사 방법 및 검사 장치 |
US9599573B2 (en) * | 2014-12-02 | 2017-03-21 | Kla-Tencor Corporation | Inspection systems and techniques with enhanced detection |
CN108180826B (zh) * | 2017-12-20 | 2023-12-22 | 深圳湾新科技有限公司 | 一种锂电池卷绕层边界的检测设备及检测方法 |
CN110132996A (zh) * | 2019-06-06 | 2019-08-16 | 德淮半导体有限公司 | 缺陷检测装置及其检测方法 |
Citations (11)
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JPS649306A (en) * | 1987-07-01 | 1989-01-12 | Fujitsu Ltd | Detector for light transmitting fine pattern |
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KR100374762B1 (ko) * | 1998-07-28 | 2003-03-04 | 히다치 덴시 엔지니어링 가부시키 가이샤 | 결함 검사 장치 및 그 방법 |
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-
2004
- 2004-10-06 JP JP2004322905A patent/JP4901090B2/ja active Active
-
2005
- 2005-09-28 CN CNA2005101133586A patent/CN1758022A/zh active Pending
- 2005-10-04 KR KR1020050093138A patent/KR20060052010A/ko not_active Application Discontinuation
- 2005-10-06 TW TW094134913A patent/TW200626888A/zh unknown
-
2012
- 2012-02-29 KR KR1020120021482A patent/KR101275343B1/ko active IP Right Grant
Patent Citations (11)
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JPS643545A (en) * | 1987-06-26 | 1989-01-09 | Hitachi Ltd | Method and apparatus for inspection |
JPS649306A (en) * | 1987-07-01 | 1989-01-12 | Fujitsu Ltd | Detector for light transmitting fine pattern |
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JPH10325805A (ja) * | 1997-05-23 | 1998-12-08 | Nikon Corp | 半導体ウエハの自動検査装置 |
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Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8012537B2 (en) | 2004-11-09 | 2011-09-06 | Global Oled Technology Llc | Controlling the vaporization of organic material |
US7990535B2 (en) | 2006-05-10 | 2011-08-02 | Nikon Corporation | Surface state detecting apparatus |
WO2007129475A1 (ja) * | 2006-05-10 | 2007-11-15 | Nikon Corporation | 表面検査装置 |
US7697139B2 (en) | 2006-05-10 | 2010-04-13 | Nikon Corporation | Surface inspection apparatus |
JP4692892B2 (ja) * | 2006-06-01 | 2011-06-01 | 株式会社ニコン | 表面検査装置 |
WO2007139225A1 (ja) * | 2006-06-01 | 2007-12-06 | Nikon Corporation | 表面検査装置 |
JP2007322272A (ja) * | 2006-06-01 | 2007-12-13 | Nikon Corp | 表面検査装置 |
WO2008007614A1 (fr) * | 2006-07-14 | 2008-01-17 | Nikon Corporation | Appareil d'inspection de surface |
US7692780B2 (en) | 2006-07-14 | 2010-04-06 | Nikon Corporation | Surface inspecting apparatus |
JP2010503862A (ja) * | 2006-09-12 | 2010-02-04 | ルドルフテクノロジーズ インコーポレイテッド | 偏光撮像 |
JPWO2009125805A1 (ja) * | 2008-04-09 | 2011-08-04 | 株式会社ニコン | 表面検査方法および表面検査装置 |
WO2009125805A1 (ja) * | 2008-04-09 | 2009-10-15 | 株式会社ニコン | 表面検査方法および表面検査装置 |
US8115916B2 (en) | 2008-04-09 | 2012-02-14 | Nikon Corporation | Surface inspecting method and surface inspecting apparatus |
JP2009300216A (ja) * | 2008-06-12 | 2009-12-24 | Nikon Corp | 観察装置 |
JP2010117324A (ja) * | 2008-11-14 | 2010-05-27 | Nikon Corp | 表面検査方法および表面検査装置 |
US8269969B2 (en) | 2009-02-18 | 2012-09-18 | Nikon Corporation | Surface inspection device and surface inspection method |
WO2010095420A1 (ja) * | 2009-02-18 | 2010-08-26 | 株式会社ニコン | 表面検査装置および表面検査方法 |
WO2012081587A1 (ja) * | 2010-12-14 | 2012-06-21 | 株式会社ニコン | 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス |
US8945954B2 (en) | 2010-12-14 | 2015-02-03 | Nikon Corporation | Inspection method, inspection apparatus, exposure control method, exposure system, and semiconductor device |
US9240356B2 (en) | 2010-12-14 | 2016-01-19 | Nikon Corporation | Surface inspection apparatus, method for inspecting surface, exposure system, and method for producing semiconductor device |
JP5867412B2 (ja) * | 2010-12-14 | 2016-02-24 | 株式会社ニコン | 表面検査装置及びその方法 |
US9322788B2 (en) | 2010-12-14 | 2016-04-26 | Nikon Corporation | Surface inspection apparatus, method for inspecting surface, exposure system, and method for producing semiconductor device |
JP5924267B2 (ja) * | 2010-12-14 | 2016-05-25 | 株式会社ニコン | 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイスの製造方法 |
US9964497B2 (en) | 2010-12-14 | 2018-05-08 | Nikon Corporation | Inspection method, inspection apparatus, exposure control method, exposure system, and semiconductor device |
JP2015141022A (ja) * | 2014-01-27 | 2015-08-03 | 株式会社ニコン | 評価方法、評価装置、及び露光システム |
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KR101275343B1 (ko) | 2013-06-17 |
TW200626888A (en) | 2006-08-01 |
CN1758022A (zh) | 2006-04-12 |
KR20120036923A (ko) | 2012-04-18 |
KR20060052010A (ko) | 2006-05-19 |
JP4901090B2 (ja) | 2012-03-21 |
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