JP4901090B2 - 欠陥検査方法及び欠陥検出装置 - Google Patents
欠陥検査方法及び欠陥検出装置 Download PDFInfo
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- JP4901090B2 JP4901090B2 JP2004322905A JP2004322905A JP4901090B2 JP 4901090 B2 JP4901090 B2 JP 4901090B2 JP 2004322905 A JP2004322905 A JP 2004322905A JP 2004322905 A JP2004322905 A JP 2004322905A JP 4901090 B2 JP4901090 B2 JP 4901090B2
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- 230000007547 defect Effects 0.000 title claims description 62
- 238000007689 inspection Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 23
- 238000001514 detection method Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 92
- 238000005286 illumination Methods 0.000 claims description 36
- 230000003287 optical effect Effects 0.000 claims description 34
- 238000012545 processing Methods 0.000 claims description 20
- 238000003384 imaging method Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 48
- 239000002344 surface layer Substances 0.000 description 12
- 230000010287 polarization Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003252 repetitive effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95692—Patterns showing hole parts, e.g. honeycomb filtering structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N2021/9513—Liquid crystal panels
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- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第6の形態は、被検査体である基板の欠陥を検査する装置であって、前記基板をP偏光の直線偏光の照明光で照明する照明光学系と、前記基板からの回折光による前記基板の像を撮像する撮像装置と、撮像した画像を処理して前記基板の欠陥を検出する処理装置とを有することを特徴とする欠陥検査装置である。
第7の形態は、被検査体である基板の欠陥を検査する装置であって、前記基板を照明光で照明する照明光学系と、前記基板からのP偏光の回折光による前記基板の像を形成する受光光学系と、前記基板の像を撮像する撮像装置と、撮像した画像を処理して前記基板の欠陥を検出する処理装置とを有することを特徴とする欠陥検査装置である。
第8の形態は、被検査体である基板の欠陥を検査する装置であって、前記基板をP偏光の直線偏光の照明光で照明する照明光学系と、前記基板からのS偏光の回折光による前記基板の像を形成する受光光学系と、前記基板の像を撮像する撮像装置と、撮像した画像を処理して前記基板の欠陥を検出する処理装置とを有することを特徴とする欠陥検査装置である。
第9の形態は、前記第6の形態から第8の形態のいずれかにおいて、前記基板の欠陥は、前記基板の表面に形成されたホールパターンの欠陥であることを特徴とする欠陥検査装置である。
aP<a<aS
bP>b>bS
となる。よって、S偏光を用いることにより、表層表面で反射される光量を相対的に大きくすることができ、下地の影響を受けないで表面の検査を行うことができる。
なお、偏光板7は照明光学系でなく受光光学系に挿入し、受光する回折光からP偏光の成分を取り出しても、照明光学系に偏光板を挿入した時と同様の効果を得られる。
Claims (4)
- 被検査体である、反射防止膜または全面パターンのない金属膜上に形成された、光を透過させる材料からなるパターンを含む基板の、前記パターンの3次元的な構造変化を伴う欠陥を検査する方法であって、前記基板を、S偏光よりも前記パターンの内部に入射する光量の多い、P偏光の平行な照明光で照明し、回折角に応じて前記基板からの平行な回折光による前記基板の像を撮像し、撮像した画像を処理して前記基板の、前記パターンの3次元的な構造変化を伴う欠陥を検出することを特徴とする欠陥検査方法。
- 請求項1に記載の欠陥検査方法を使用して、基板の表面に形成されたホールパターンの欠陥を検出することを特徴とするホールパターンの検査方法。
- 被検査体である基板の表面に形成されたホールパターンの欠陥を検査する方法であって、前記基板を、振動面と前記基板との交線が前記ホールパターンとは異なる層に形成された配線パターンに平行又は垂直なP偏光の直線偏光で照明し、前記基板からの回折光に含まれるP偏光の直線偏光を除去した残りの光を用いて前記基板の像を撮像し、撮像した画像を処理して前記基板の欠陥を検出することを特徴とする欠陥検査方法。
- 被検査体である基板の表面に形成されたホールパターンの欠陥を検査する装置であって、前記基板を、振動面と前記基板との交線が前記ホールパターンとは異なる層に形成された配線パターンに平行又は垂直なP偏光の直線偏光で照明する照明光学系と、前記基板からの回折光に含まれるP偏光の直線偏光を除去した残りの光を用いて前記基板の像を撮像する撮像装置と、撮像した画像を処理して前記基板の欠陥を検出する処理装置とを有することを特徴とする欠陥検査装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004322905A JP4901090B2 (ja) | 2004-10-06 | 2004-10-06 | 欠陥検査方法及び欠陥検出装置 |
CNA2005101133586A CN1758022A (zh) | 2004-10-06 | 2005-09-28 | 缺陷检查方法 |
KR1020050093138A KR20060052010A (ko) | 2004-10-06 | 2005-10-04 | 결함 검사 방법 |
US11/243,425 US7643137B2 (en) | 2003-03-26 | 2005-10-05 | Defect inspection apparatus, defect inspection method and method of inspecting hole pattern |
TW094134913A TW200626888A (en) | 2004-10-06 | 2005-10-06 | Defect inspection method |
US12/591,298 US8446578B2 (en) | 2003-03-26 | 2009-11-16 | Defect inspection apparatus, defect inspection method and method of inspecting hole pattern |
KR1020120021482A KR101275343B1 (ko) | 2004-10-06 | 2012-02-29 | 결함 검사 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004322905A JP4901090B2 (ja) | 2004-10-06 | 2004-10-06 | 欠陥検査方法及び欠陥検出装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011023349A Division JP5287891B2 (ja) | 2011-02-04 | 2011-02-04 | 欠陥検査方法 |
Publications (3)
Publication Number | Publication Date |
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JP2006105951A JP2006105951A (ja) | 2006-04-20 |
JP2006105951A5 JP2006105951A5 (ja) | 2007-10-18 |
JP4901090B2 true JP4901090B2 (ja) | 2012-03-21 |
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ID=36375851
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JP2004322905A Active JP4901090B2 (ja) | 2003-03-26 | 2004-10-06 | 欠陥検査方法及び欠陥検出装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4901090B2 (ja) |
KR (2) | KR20060052010A (ja) |
CN (1) | CN1758022A (ja) |
TW (1) | TW200626888A (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060099344A1 (en) | 2004-11-09 | 2006-05-11 | Eastman Kodak Company | Controlling the vaporization of organic material |
JP4548385B2 (ja) | 2006-05-10 | 2010-09-22 | 株式会社ニコン | 表面検査装置 |
JP4692892B2 (ja) * | 2006-06-01 | 2011-06-01 | 株式会社ニコン | 表面検査装置 |
KR101382020B1 (ko) | 2006-07-14 | 2014-04-04 | 가부시키가이샤 니콘 | 표면 검사 장치 |
KR20090060435A (ko) * | 2006-09-12 | 2009-06-12 | 루돌프 테크놀로지스 인코퍼레이티드 | 편광 이미징 |
WO2008152801A1 (ja) * | 2007-06-13 | 2008-12-18 | Nikon Corporation | 検査装置、検査方法およびプログラム |
JP5610462B2 (ja) * | 2007-10-23 | 2014-10-22 | 芝浦メカトロニクス株式会社 | 撮影画像に基づいた検査方法及び検査装置 |
JPWO2009125805A1 (ja) * | 2008-04-09 | 2011-08-04 | 株式会社ニコン | 表面検査方法および表面検査装置 |
JP2009300216A (ja) * | 2008-06-12 | 2009-12-24 | Nikon Corp | 観察装置 |
JP5252286B2 (ja) * | 2008-11-14 | 2013-07-31 | 株式会社ニコン | 表面検査方法、表面検査装置および検査方法 |
TW201100787A (en) | 2009-02-18 | 2011-01-01 | Nikon Corp | Surface examining device and surface examining method |
WO2012081587A1 (ja) | 2010-12-14 | 2012-06-21 | 株式会社ニコン | 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス |
JP6406492B2 (ja) * | 2014-01-27 | 2018-10-17 | 株式会社ニコン | 評価方法、評価装置、及び露光システム |
US9599573B2 (en) * | 2014-12-02 | 2017-03-21 | Kla-Tencor Corporation | Inspection systems and techniques with enhanced detection |
CN108180826B (zh) * | 2017-12-20 | 2023-12-22 | 深圳湾新科技有限公司 | 一种锂电池卷绕层边界的检测设备及检测方法 |
CN110132996A (zh) * | 2019-06-06 | 2019-08-16 | 德淮半导体有限公司 | 缺陷检测装置及其检测方法 |
Family Cites Families (14)
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JPS643545A (en) * | 1987-06-26 | 1989-01-09 | Hitachi Ltd | Method and apparatus for inspection |
JPS649306A (en) * | 1987-07-01 | 1989-01-12 | Fujitsu Ltd | Detector for light transmitting fine pattern |
JP3692685B2 (ja) * | 1997-02-19 | 2005-09-07 | 株式会社ニコン | 欠陥検査装置 |
JPH10325805A (ja) * | 1997-05-23 | 1998-12-08 | Nikon Corp | 半導体ウエハの自動検査装置 |
JP3982017B2 (ja) * | 1997-08-05 | 2007-09-26 | 株式会社ニコン | 欠陥検査装置 |
JPH1164234A (ja) * | 1997-08-20 | 1999-03-05 | Advantest Corp | 異物検出方法、および異物検出装置 |
KR100374762B1 (ko) * | 1998-07-28 | 2003-03-04 | 히다치 덴시 엔지니어링 가부시키 가이샤 | 결함 검사 장치 및 그 방법 |
JP4184543B2 (ja) * | 1999-06-10 | 2008-11-19 | 株式会社日立製作所 | 光学像検出方法および外観検査装置 |
JP3769996B2 (ja) * | 1999-09-20 | 2006-04-26 | 三菱電機株式会社 | 欠陥検査用半導体基板、半導体基板の検査方法および半導体基板検査用モニター装置 |
JP2001165632A (ja) * | 1999-12-03 | 2001-06-22 | Sony Corp | 検査装置及び検査方法 |
JP4153652B2 (ja) * | 2000-10-05 | 2008-09-24 | 株式会社東芝 | パターン評価装置及びパターン評価方法 |
JP2002257747A (ja) * | 2001-02-27 | 2002-09-11 | Matsushita Electric Ind Co Ltd | 欠陥検査装置 |
KR100492159B1 (ko) * | 2002-10-30 | 2005-06-02 | 삼성전자주식회사 | 기판 검사 장치 |
JP4183492B2 (ja) * | 2002-11-27 | 2008-11-19 | 株式会社日立製作所 | 欠陥検査装置および欠陥検査方法 |
-
2004
- 2004-10-06 JP JP2004322905A patent/JP4901090B2/ja active Active
-
2005
- 2005-09-28 CN CNA2005101133586A patent/CN1758022A/zh active Pending
- 2005-10-04 KR KR1020050093138A patent/KR20060052010A/ko not_active Application Discontinuation
- 2005-10-06 TW TW094134913A patent/TW200626888A/zh unknown
-
2012
- 2012-02-29 KR KR1020120021482A patent/KR101275343B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN1758022A (zh) | 2006-04-12 |
JP2006105951A (ja) | 2006-04-20 |
TW200626888A (en) | 2006-08-01 |
KR20120036923A (ko) | 2012-04-18 |
KR20060052010A (ko) | 2006-05-19 |
KR101275343B1 (ko) | 2013-06-17 |
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