JP4878739B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4878739B2 JP4878739B2 JP2004141926A JP2004141926A JP4878739B2 JP 4878739 B2 JP4878739 B2 JP 4878739B2 JP 2004141926 A JP2004141926 A JP 2004141926A JP 2004141926 A JP2004141926 A JP 2004141926A JP 4878739 B2 JP4878739 B2 JP 4878739B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000012535 impurity Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 24
- 238000000227 grinding Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 100
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 39
- 239000010703 silicon Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 35
- 230000004888 barrier function Effects 0.000 description 28
- 230000008859 change Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Description
は、全体として電界効果トランジスタを構成しており、P+型ベース領域111のゲート絶縁膜107と接する部分の近傍にチャネルが形成されたときに、このチャネルを通ってバリアメタル膜101とエミッタ電極膜106との間に電流が流れる。
101:バリアメタル膜
102:絶縁膜
103:N+型バッファ層
104:N−型ドリフト層
105:N+型チャネルストッパ領域
106:エミッタ電極膜
107:ゲート絶縁膜
108:ゲート電極膜
109:層間絶縁膜
110:N+型エミッタ領域
111:P+型ベース領域
113:エピタキシャル成長層
114:シリコン基板
115:N−型ドレイン層
Claims (1)
- 第1導電型の半導体ウェーハの一方の主面上にエピタキシャル成長によって第1導電型の導電層を形成すると共に、該導電層が第1の厚さになるまではその不純物濃度がその厚さ方向に対して高不純物濃度から低不純物濃度にドーパントガスの流量を調整することで連続的に変化し、第1の厚さを超えて第2の厚さになるまではその不純物濃度が一定になるようにする第1の工程と、
前記導電層の露出面側に選択的に第2導電型のベース領域を形成し、前記ベース領域に選択的に第1導電型のエミッタ領域を形成し、前記ベース領域、前記エミッタ領域及び前記導電層の表面に部分的に覆うようにゲート絶縁膜を形成し、前記ゲート絶縁膜上に堆積するようにゲート電極を形成する工程を有する電界効果トランジスタを形成する第2の工程と、
前記半導体ウェーハの他方の主面から該半導体ウェーハのみのすべての厚みと前記導電層の不純物濃度がその厚さ方向に対して連続的に変化している部分の一部とを研削、研磨及びエッチングのいずれか二以上の方法で薄くする第3の工程と、
前記第3の工程によって露出した前記導電層の表面に、前記導電層とショットキー接合させた金属膜を形成する第4の工程を有することを特徴とする半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004141926A JP4878739B2 (ja) | 2004-05-12 | 2004-05-12 | 半導体装置の製造方法 |
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JP2004141926A JP4878739B2 (ja) | 2004-05-12 | 2004-05-12 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005327770A JP2005327770A (ja) | 2005-11-24 |
JP4878739B2 true JP4878739B2 (ja) | 2012-02-15 |
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JP2004141926A Expired - Lifetime JP4878739B2 (ja) | 2004-05-12 | 2004-05-12 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4878739B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101876579B1 (ko) * | 2012-09-13 | 2018-07-10 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 및 그 소자의 제조 방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4961740B2 (ja) * | 2005-12-28 | 2012-06-27 | 住友化学株式会社 | 化合物半導体エピタキシャル基板の製造方法 |
JP6130695B2 (ja) * | 2013-03-21 | 2017-05-17 | 新電元工業株式会社 | Igbt及びigbtの製造方法 |
JP6952483B2 (ja) * | 2017-04-06 | 2021-10-20 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、および電力変換装置 |
CN113299539B (zh) * | 2021-05-24 | 2022-10-11 | 深圳市联冀电子有限公司 | 一种sbd低正向饱和专用材料及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6464225A (en) * | 1987-09-03 | 1989-03-10 | Nissan Motor | Manufacture of semiconductor device |
JPS6482563A (en) * | 1987-09-24 | 1989-03-28 | Mitsubishi Electric Corp | Semiconductor device |
JPH1140808A (ja) * | 1997-05-21 | 1999-02-12 | Toyota Motor Corp | 半導体装置およびその製造方法 |
JP2001135814A (ja) * | 1999-11-02 | 2001-05-18 | Shindengen Electric Mfg Co Ltd | 縦型mos電界効果トランジスタ |
JP4845293B2 (ja) * | 2000-08-30 | 2011-12-28 | 新電元工業株式会社 | 電界効果トランジスタ |
JP4614554B2 (ja) * | 2001-02-13 | 2011-01-19 | 日本インター株式会社 | 半導体装置 |
JP4904625B2 (ja) * | 2001-02-14 | 2012-03-28 | 富士電機株式会社 | 半導体装置 |
JP4967209B2 (ja) * | 2001-08-30 | 2012-07-04 | 富士電機株式会社 | 半導体装置の製造方法 |
JP4133565B2 (ja) * | 2002-06-05 | 2008-08-13 | 新電元工業株式会社 | トランジスタとその製造方法、及びダイオード |
JP3951868B2 (ja) * | 2002-09-12 | 2007-08-01 | 富士電機デバイステクノロジー株式会社 | 半導体装置およびその製造方法 |
JP2004119498A (ja) * | 2002-09-24 | 2004-04-15 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
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2004
- 2004-05-12 JP JP2004141926A patent/JP4878739B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101876579B1 (ko) * | 2012-09-13 | 2018-07-10 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 및 그 소자의 제조 방법 |
US10504994B2 (en) | 2012-09-13 | 2019-12-10 | Magnachip Semiconductor, Ltd. | Power semiconductor device and fabrication method thereof |
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JP2005327770A (ja) | 2005-11-24 |
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