JP4876520B2 - 不揮発性半導体メモリ及びその製造方法 - Google Patents

不揮発性半導体メモリ及びその製造方法

Info

Publication number
JP4876520B2
JP4876520B2 JP2005294633A JP2005294633A JP4876520B2 JP 4876520 B2 JP4876520 B2 JP 4876520B2 JP 2005294633 A JP2005294633 A JP 2005294633A JP 2005294633 A JP2005294633 A JP 2005294633A JP 4876520 B2 JP4876520 B2 JP 4876520B2
Authority
JP
Japan
Prior art keywords
insulating layer
constituting
gate electrode
floating gate
fine particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005294633A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007103828A5 (enExample
JP2007103828A (ja
Inventor
晋太郎 平田
大介 保原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2005294633A priority Critical patent/JP4876520B2/ja
Publication of JP2007103828A publication Critical patent/JP2007103828A/ja
Publication of JP2007103828A5 publication Critical patent/JP2007103828A5/ja
Application granted granted Critical
Publication of JP4876520B2 publication Critical patent/JP4876520B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2005294633A 2005-10-07 2005-10-07 不揮発性半導体メモリ及びその製造方法 Expired - Fee Related JP4876520B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005294633A JP4876520B2 (ja) 2005-10-07 2005-10-07 不揮発性半導体メモリ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005294633A JP4876520B2 (ja) 2005-10-07 2005-10-07 不揮発性半導体メモリ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2007103828A JP2007103828A (ja) 2007-04-19
JP2007103828A5 JP2007103828A5 (enExample) 2008-11-13
JP4876520B2 true JP4876520B2 (ja) 2012-02-15

Family

ID=38030445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005294633A Expired - Fee Related JP4876520B2 (ja) 2005-10-07 2005-10-07 不揮発性半導体メモリ及びその製造方法

Country Status (1)

Country Link
JP (1) JP4876520B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
KR101490109B1 (ko) * 2007-10-18 2015-02-12 삼성전자주식회사 반도체 소자와 그의 제조 및 동작방법
US8383432B2 (en) 2008-08-07 2013-02-26 Sharp Laboratories Of America, Inc. Colloidal-processed silicon particle device
JP5706077B2 (ja) * 2008-10-02 2015-04-22 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体素子とその製造及び動作方法
CN102496631B (zh) * 2011-11-25 2014-05-21 中山大学 背电极结构的ZnO基全透明非挥发存储器及制备方法
CN105556681B (zh) * 2013-10-04 2017-11-17 旭化成株式会社 太阳能电池及其制造方法、半导体元件及其制造方法
CN106328535B (zh) * 2015-07-02 2019-08-27 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
TW201825384A (zh) * 2016-08-22 2018-07-16 國立研究開發法人科學技術振興機構 記憶組件
CN112582541B (zh) * 2020-12-06 2022-07-29 南开大学 一种基于二维叠层异质结构的垂直单分子膜场效应晶体管及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4635410B2 (ja) * 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法
JP4056817B2 (ja) * 2002-07-23 2008-03-05 光正 小柳 不揮発性半導体記憶素子の製造方法
JP4514087B2 (ja) * 2002-09-25 2010-07-28 シャープ株式会社 メモリ膜構造、メモリ素子及びその製造方法、並びに、半導体集積回路及びそれを用いた携帯電子機器
JP4563652B2 (ja) * 2003-03-13 2010-10-13 シャープ株式会社 メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器
EP2299482A3 (en) * 2003-10-06 2014-12-17 Massachusetts Institute Of Technology Non-volatile memory device
JP4420692B2 (ja) * 2004-02-10 2010-02-24 シャープ株式会社 メモリ素子の製造方法
JP4696520B2 (ja) * 2004-10-05 2011-06-08 ソニー株式会社 電界効果型トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JP2007103828A (ja) 2007-04-19

Similar Documents

Publication Publication Date Title
JP4586334B2 (ja) 電界効果型トランジスタ及びその製造方法
US7579223B2 (en) Semiconductor apparatus and process for fabricating the same
Chen et al. Recent advances in metal nanoparticle‐based floating gate memory
JP5589271B2 (ja) 半導体薄膜の形成方法及び電子デバイスの製造方法
US7776682B1 (en) Ordered porosity to direct memory element formation
KR20060070716A (ko) 유기 메모리 소자 및 제조 방법
CN107994022B (zh) 一种浮栅晶体管存储器及其制备方法
EP1642349A1 (en) Memory device and methods of using and making the device
US9293571B2 (en) Metal nanoparticle monolayer
JP4876520B2 (ja) 不揮発性半導体メモリ及びその製造方法
KR101390011B1 (ko) 유기 메모리 소자 및 그의 제조방법
JP4834992B2 (ja) 半導体装置の製造方法
TW201532202A (zh) 包括奈米浮閘的非揮發性記憶裝置及製造該裝置的方法
JP4940618B2 (ja) 半導体装置
JP4696520B2 (ja) 電界効果型トランジスタ及びその製造方法
KR102636495B1 (ko) 단분자 트랜지스터
Saranti et al. Charge-trap-non-volatile memory and focus on flexible flash memory devices
CN106340528A (zh) 一种双金属浮栅存储器及其制备方法
JP4639703B2 (ja) 電子装置の製造方法、並びに、半導体装置の製造方法
JP2006108400A (ja) 半導体装置
JP2007335827A (ja) 微粒子層構造体及びその形成方法、半導体装置、並びに、分離領域
KR20150060293A (ko) 메모리 소자 및 이의 제조방법
KR20070058937A (ko) 유기 반도체 소자 및 그 제작 방법
JP2006100618A (ja) 半導体装置及びその製造方法
KR20150060353A (ko) 메모리 소자 및 이의 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080929

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080929

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111011

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111013

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111101

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111114

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees