JP4875173B2 - 基板保持装置及び基板保持方法 - Google Patents
基板保持装置及び基板保持方法 Download PDFInfo
- Publication number
- JP4875173B2 JP4875173B2 JP2010022270A JP2010022270A JP4875173B2 JP 4875173 B2 JP4875173 B2 JP 4875173B2 JP 2010022270 A JP2010022270 A JP 2010022270A JP 2010022270 A JP2010022270 A JP 2010022270A JP 4875173 B2 JP4875173 B2 JP 4875173B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- holding
- annular seal
- processing
- holding head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 438
- 238000000034 method Methods 0.000 title claims description 28
- 230000007246 mechanism Effects 0.000 claims description 37
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 description 109
- 239000000126 substance Substances 0.000 description 92
- 239000007788 liquid Substances 0.000 description 89
- 239000000243 solution Substances 0.000 description 77
- 239000007921 spray Substances 0.000 description 76
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 70
- 238000007747 plating Methods 0.000 description 47
- 238000011282 treatment Methods 0.000 description 42
- 238000007772 electroless plating Methods 0.000 description 37
- 238000012546 transfer Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 12
- 230000032258 transport Effects 0.000 description 12
- 239000003054 catalyst Substances 0.000 description 11
- 238000001035 drying Methods 0.000 description 11
- 238000001179 sorption measurement Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000012993 chemical processing Methods 0.000 description 7
- 229920001971 elastomer Polymers 0.000 description 7
- 239000005060 rubber Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000001509 sodium citrate Substances 0.000 description 5
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 5
- 101150003085 Pdcl gene Proteins 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000011550 stock solution Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 239000008155 medical solution Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
- C23C18/163—Supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Robotics (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
Description
前記保持ヘッドは、前記環状シールで保持した基板を保持ヘッドから離れる方向に押圧するプッシャを更に有することが好ましい。
これにより、例え基板が環状シールに強固に貼り付いていても、プッシャの押圧力を利用して基板を環状シールから確実にリリースすることができる。
・CoSO4・7H2O:23g/L
・Na3C6H5O7・2H2O:145g/L
・(NH4)2SO4:31g/L
・NaH2PO2・H2O:18g/L
・Na2WO4・2H2O:10g/L
・pH:8.8(NaOH水溶液で調整)
なお、このことは、無電解めっきユニット26にあっても同様である。
先ず、図16に示すように、保持ヘッド184を回転させることなく、基板支持部182を最も下の位置(基板受渡し位置)に移動させ、ロボットハンド(図示せず)で吸着された基板Wを基板保持部72の内部に挿入する。そして、ロボットハンドの吸着を解除することで、基板Wを基板支持部182の基板仮置き部185の上に載置する。このとき、基板Wの表面(被処理面)は、下を向いている。そして、ロボットハンドを基板保持部72から抜き出す。次に、基板支持部182を上昇させ、基板Wの裏面(上面)周面部に環状シール190の下端面を当接させ、更に上昇させて密着させる。
この時、補助基板リリース機構216のプッシャ206を上方に持ち上げて、このプッシャ206によって基板Wの保持が阻害されないようにしておく。
第2基板搬送ロボット18は、めっき前処理後の基板をめっき前処理ユニット24の基板保持部72から受け取り、電解めっきユニット26の基板保持部72に受け渡す。
Claims (5)
- 基板の裏面周縁部をシールしながら基板を保持する環状シールを備えた回転自在な保持ヘッドを有し、
前記保持ヘッドは、基板を保持した状態での該保持ヘッドの回転に伴って、前記環状シールでシールされた基板の裏面側に負圧を発生させる絞り機構を有し、
前記絞り機構は、前記保持ヘッドで保持した基板の裏面を被覆する被覆体に設けた空気抜き穴と、この空気抜き穴と連通するスロート部を有し、前記保持ヘッドの回転に伴って該スロート部に発生する空気の流れによるベンチュリ効果を利用して前記空気抜き穴の内部を負圧にすることを特徴とする基板保持装置。 - 前記保持ヘッドは、前記環状シールの内部を真空引きして基板を吸着保持することを特徴とする請求項1記載の基板保持装置。
- 前記保持ヘッドは、前記環状シールで保持した基板を保持ヘッドから離れる方向に押圧するプッシャを更に有することを特徴とする請求項1記載の基板保持装置。
- 表面を下向きにして基板を支持することを特徴とする請求項1記載の基板保持装置。
- 基板の裏面周縁部を環状シールでシールしながら基板を保持ヘッドで保持し、
基板を保持した状態での前記保持ヘッドの回転に伴って、基板の裏面と前記環状シールで区画された基板の裏面側に負圧を発生させる基板保持方法であって、
前記保持ヘッドで保持した基板の裏面を被覆する被覆体に設けた空気抜き穴と、この空気抜き穴と連通するスロート部を有し、前記保持ヘッドの回転に伴って該スロート部に発生する空気の流れによるベンチュリ効果を利用して前記空気抜き穴の内部を負圧にすることを特徴とする基板保持方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010022270A JP4875173B2 (ja) | 2004-04-28 | 2010-02-03 | 基板保持装置及び基板保持方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004132529 | 2004-04-28 | ||
JP2004132529 | 2004-04-28 | ||
JP2005020346 | 2005-01-27 | ||
JP2005020346 | 2005-01-27 | ||
JP2010022270A JP4875173B2 (ja) | 2004-04-28 | 2010-02-03 | 基板保持装置及び基板保持方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006512870A Division JPWO2005105322A1 (ja) | 2004-04-28 | 2005-04-27 | 基板処理ユニット及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010118685A JP2010118685A (ja) | 2010-05-27 |
JP4875173B2 true JP4875173B2 (ja) | 2012-02-15 |
Family
ID=35241483
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006512870A Pending JPWO2005105322A1 (ja) | 2004-04-28 | 2005-04-27 | 基板処理ユニット及び基板処理装置 |
JP2010022270A Expired - Fee Related JP4875173B2 (ja) | 2004-04-28 | 2010-02-03 | 基板保持装置及び基板保持方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006512870A Pending JPWO2005105322A1 (ja) | 2004-04-28 | 2005-04-27 | 基板処理ユニット及び基板処理装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7368016B2 (ja) |
EP (1) | EP1757371A1 (ja) |
JP (2) | JPWO2005105322A1 (ja) |
KR (1) | KR101140770B1 (ja) |
TW (1) | TWI361843B (ja) |
WO (1) | WO2005105322A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7972652B2 (en) * | 2005-10-14 | 2011-07-05 | Lam Research Corporation | Electroless plating system |
JP2009178672A (ja) * | 2008-01-31 | 2009-08-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置及び基板処理方法 |
US8795032B2 (en) * | 2008-06-04 | 2014-08-05 | Ebara Corporation | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
JP5144620B2 (ja) * | 2009-10-20 | 2013-02-13 | 日立Geニュークリア・エナジー株式会社 | 水中遠隔調査装置及び水中遠隔調査方法 |
KR101478859B1 (ko) * | 2009-12-09 | 2015-01-02 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법, 및 이 기판 처리 방법을 실행시키기 위한 프로그램을 기록한 기록 매체 |
JP5451515B2 (ja) | 2010-05-06 | 2014-03-26 | 東京エレクトロン株式会社 | 薬液供給システム、これを備える基板処理装置、およびこの基板処理装置を備える塗布現像システム |
US20120058630A1 (en) * | 2010-09-08 | 2012-03-08 | Veeco Instruments Inc. | Linear Cluster Deposition System |
JP5782398B2 (ja) * | 2012-03-27 | 2015-09-24 | 株式会社荏原製作所 | めっき方法及びめっき装置 |
CN104471700B (zh) * | 2012-03-28 | 2016-10-26 | 盛美半导体设备(上海)有限公司 | 真空夹具 |
JP5794194B2 (ja) * | 2012-04-19 | 2015-10-14 | 東京エレクトロン株式会社 | 基板処理装置 |
US20140293291A1 (en) * | 2013-04-01 | 2014-10-02 | Kla-Tencor Corporation | Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers |
JP6720978B2 (ja) * | 2015-09-30 | 2020-07-08 | 住友金属鉱山株式会社 | 有機被膜の製造方法、導電性基板の製造方法、有機被膜製造装置 |
JP6698446B2 (ja) * | 2016-07-05 | 2020-05-27 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
TWI645913B (zh) * | 2016-11-10 | 2019-01-01 | 辛耘企業股份有限公司 | 液體製程裝置 |
WO2019035920A1 (en) * | 2017-08-18 | 2019-02-21 | Tel Fsi, Inc. | APPARATUS FOR SPRAYING CRYOGENIC FLUIDS |
WO2020078190A1 (zh) | 2018-10-15 | 2020-04-23 | 杭州众硅电子科技有限公司 | 一种cmp晶圆清洗设备、晶圆传输机械手及其晶圆翻转方法 |
CN116262983A (zh) * | 2021-12-14 | 2023-06-16 | 盛美半导体设备(上海)股份有限公司 | 电镀装置 |
CN115116899B (zh) * | 2022-06-17 | 2023-10-27 | 苏州智程半导体科技股份有限公司 | 一种晶圆真空湿润机构及晶圆真空湿润方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3727620A (en) * | 1970-03-18 | 1973-04-17 | Fluoroware Of California Inc | Rinsing and drying device |
US3731435A (en) * | 1971-02-09 | 1973-05-08 | Speedfam Corp | Polishing machine load plate |
DE3107101A1 (de) | 1981-02-20 | 1982-09-09 | Schering Ag, 1000 Berlin Und 4619 Bergkamen | Vorrichtung und verfahren zur galvanischen metallabscheidung auf gegenstaenden, deren reinigung von anhaftenden oberflaechenbehandlungsmitteln sowie deren rueckgewinnung |
JPH0625263B2 (ja) * | 1987-07-23 | 1994-04-06 | 工業技術院長 | 導電性高分子フイルムの処理方法 |
JPH08257469A (ja) * | 1995-01-24 | 1996-10-08 | Canon Inc | 基板回転装置および基板処理装置 |
US5762544A (en) * | 1995-10-27 | 1998-06-09 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
KR100249309B1 (ko) * | 1997-02-28 | 2000-03-15 | 윤종용 | 반도체 제조용 포토 레지스트 코팅 장치 |
KR100271764B1 (ko) * | 1997-12-24 | 2000-12-01 | 윤종용 | 반도체장치 제조용 현상 장치 및 그의 제어방법 |
JP3967479B2 (ja) * | 1998-12-02 | 2007-08-29 | 株式会社荏原製作所 | めっき装置 |
TW473811B (en) | 1998-11-30 | 2002-01-21 | Ebara Corp | Plating apparatus |
US6352623B1 (en) | 1999-12-17 | 2002-03-05 | Nutool, Inc. | Vertically configured chamber used for multiple processes |
US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
US6716329B2 (en) * | 2000-05-02 | 2004-04-06 | Tokyo Electron Limited | Processing apparatus and processing system |
JP3850226B2 (ja) * | 2001-04-02 | 2006-11-29 | 株式会社荏原製作所 | 基板処理装置 |
US6824612B2 (en) * | 2001-12-26 | 2004-11-30 | Applied Materials, Inc. | Electroless plating system |
JP4064132B2 (ja) * | 2002-03-18 | 2008-03-19 | 株式会社荏原製作所 | 基板処理装置及び基板処理方法 |
US6824613B2 (en) | 2002-05-30 | 2004-11-30 | Ebara Corporation | Substrate processing apparatus |
CN100355021C (zh) | 2002-06-06 | 2007-12-12 | 株式会社荏原制作所 | 衬底处理设备和衬底处理方法 |
JP3985864B2 (ja) * | 2002-08-27 | 2007-10-03 | 株式会社荏原製作所 | 無電解めっき装置及び方法 |
TWI601199B (zh) * | 2002-11-15 | 2017-10-01 | 荏原製作所股份有限公司 | 基板處理裝置及基板處理方法 |
JP2004300576A (ja) | 2003-03-20 | 2004-10-28 | Ebara Corp | 基板処理方法及び基板処理装置 |
US20050022909A1 (en) | 2003-03-20 | 2005-02-03 | Xinming Wang | Substrate processing method and substrate processing apparatus |
JP2004339534A (ja) | 2003-05-13 | 2004-12-02 | Shinko Electric Ind Co Ltd | めっき処理装置 |
US7465358B2 (en) * | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
-
2005
- 2005-04-27 US US11/115,214 patent/US7368016B2/en active Active
- 2005-04-27 WO PCT/JP2005/008455 patent/WO2005105322A1/ja active Application Filing
- 2005-04-27 EP EP05738627A patent/EP1757371A1/en not_active Withdrawn
- 2005-04-27 JP JP2006512870A patent/JPWO2005105322A1/ja active Pending
- 2005-04-27 KR KR1020067022521A patent/KR101140770B1/ko active IP Right Grant
- 2005-04-28 TW TW094113624A patent/TWI361843B/zh not_active IP Right Cessation
-
2008
- 2008-03-24 US US12/076,834 patent/US7735450B2/en not_active Expired - Fee Related
-
2010
- 2010-02-03 JP JP2010022270A patent/JP4875173B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050281947A1 (en) | 2005-12-22 |
TW200602516A (en) | 2006-01-16 |
WO2005105322A1 (ja) | 2005-11-10 |
US7368016B2 (en) | 2008-05-06 |
KR101140770B1 (ko) | 2012-05-03 |
EP1757371A1 (en) | 2007-02-28 |
JP2010118685A (ja) | 2010-05-27 |
US20080178800A1 (en) | 2008-07-31 |
KR20070007861A (ko) | 2007-01-16 |
US7735450B2 (en) | 2010-06-15 |
JPWO2005105322A1 (ja) | 2008-03-13 |
TWI361843B (en) | 2012-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4875173B2 (ja) | 基板保持装置及び基板保持方法 | |
JP4425801B2 (ja) | 基板処理装置 | |
JP3979464B2 (ja) | 無電解めっき前処理装置及び方法 | |
US6921466B2 (en) | Revolution member supporting apparatus and semiconductor substrate processing apparatus | |
KR100792017B1 (ko) | 도금처리유닛 | |
US20040234696A1 (en) | Plating device and method | |
US20030089608A1 (en) | Substrate processing apparatus | |
US20030000840A1 (en) | Electroplating apparatus and method | |
JP2008013851A (ja) | 回転保持装置及び半導体基板処理装置 | |
KR20070061337A (ko) | 무전해 도금 장치 및 무전해 도금 방법 | |
JP2005264245A (ja) | 基板の湿式処理方法及び処理装置 | |
JP4064132B2 (ja) | 基板処理装置及び基板処理方法 | |
JP2001070861A (ja) | 液処理方法及び液処理装置 | |
TWI702113B (zh) | 基板保持模組、基板處理裝置、及基板處理方法 | |
JP3871613B2 (ja) | 無電解めっき装置及び方法 | |
JP2005194613A (ja) | 基板の湿式処理方法及び処理装置 | |
JP4112879B2 (ja) | 電解処理装置 | |
JP2005002443A (ja) | めっき方法及びめっき装置 | |
JP4060700B2 (ja) | 基板処理装置及び基板処理方法 | |
JP2001316870A (ja) | 液処理装置及び液処理方法 | |
JP2006009131A (ja) | 基板処理方法及び装置 | |
US20070214620A1 (en) | Substrate processing apparatus and substrate processing method | |
JP2004360027A (ja) | めっき装置及びめっき液保持方法 | |
JPH04333234A (ja) | 洗浄装置及び洗浄方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110816 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111012 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111101 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111124 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141202 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4875173 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |