JP4841740B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4841740B2
JP4841740B2 JP2001128346A JP2001128346A JP4841740B2 JP 4841740 B2 JP4841740 B2 JP 4841740B2 JP 2001128346 A JP2001128346 A JP 2001128346A JP 2001128346 A JP2001128346 A JP 2001128346A JP 4841740 B2 JP4841740 B2 JP 4841740B2
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Japan
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film
region
semiconductor
tft
manufacturing
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Expired - Fee Related
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JP2001128346A
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English (en)
Japanese (ja)
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JP2002025907A (ja
JP2002025907A5 (enExample
Inventor
健司 笠原
律子 河崎
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001128346A priority Critical patent/JP4841740B2/ja
Publication of JP2002025907A publication Critical patent/JP2002025907A/ja
Publication of JP2002025907A5 publication Critical patent/JP2002025907A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001128346A 2000-04-26 2001-04-25 半導体装置の作製方法 Expired - Fee Related JP4841740B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001128346A JP4841740B2 (ja) 2000-04-26 2001-04-25 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000125199 2000-04-26
JP2000125199 2000-04-26
JP2000-125199 2000-04-26
JP2001128346A JP4841740B2 (ja) 2000-04-26 2001-04-25 半導体装置の作製方法

Publications (3)

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JP2002025907A JP2002025907A (ja) 2002-01-25
JP2002025907A5 JP2002025907A5 (enExample) 2008-03-21
JP4841740B2 true JP4841740B2 (ja) 2011-12-21

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JP2001128346A Expired - Fee Related JP4841740B2 (ja) 2000-04-26 2001-04-25 半導体装置の作製方法

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4290349B2 (ja) * 2000-06-12 2009-07-01 セイコーエプソン株式会社 半導体装置の製造方法
TWI263336B (en) 2000-06-12 2006-10-01 Semiconductor Energy Lab Thin film transistors and semiconductor device
JP4698010B2 (ja) * 2000-10-20 2011-06-08 三洋電機株式会社 エレクトロルミネッセンス表示装置及びその製造方法
JP4610867B2 (ja) * 2002-06-14 2011-01-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4481562B2 (ja) * 2002-11-29 2010-06-16 キヤノン株式会社 結晶性薄膜の製造方法
KR100611744B1 (ko) * 2003-11-22 2006-08-10 삼성에스디아이 주식회사 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법
DE102005027089B4 (de) * 2005-06-11 2013-03-21 Daimler Ag Profil zur Aufnahme eines Sensorbandes an einem Kraftfahrzeugstoßfänger sowie Stoßfänger
JP5311754B2 (ja) * 2006-03-20 2013-10-09 株式会社半導体エネルギー研究所 結晶性半導体膜、半導体装置及びそれらの作製方法
SG11201405535PA (en) * 2012-04-18 2014-11-27 Applied Materials Inc Apparatus and method to reduce particles in advance anneal process

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3208201B2 (ja) * 1992-11-24 2001-09-10 三洋電機株式会社 多結晶半導体薄膜の製造方法
JPH06333827A (ja) * 1993-05-25 1994-12-02 Sony Corp 結晶成長方法およびｍｏｓ型トランジスタのチャネル形成方法
JP3034765B2 (ja) * 1994-07-28 2000-04-17 株式会社半導体エネルギー研究所 レーザー処理方法
JPH0864526A (ja) * 1994-08-24 1996-03-08 Sony Corp 光照射による材料の改質方法および半導体装置の製造方法
JP3778456B2 (ja) * 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JP3433856B2 (ja) * 1995-02-22 2003-08-04 住友重機械工業株式会社 非晶質薄膜結晶化方法
JPH08255753A (ja) * 1995-03-16 1996-10-01 Sharp Corp 結晶性半導体薄膜の製造方法
JP3581576B2 (ja) * 1996-02-26 2004-10-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3544280B2 (ja) * 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000003875A (ja) * 1998-06-12 2000-01-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4376331B2 (ja) * 1998-08-07 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000286211A (ja) * 1999-03-31 2000-10-13 Seiko Epson Corp 薄膜半導体装置の製造方法
JP3455695B2 (ja) * 1999-04-12 2003-10-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3442694B2 (ja) * 1999-08-19 2003-09-02 株式会社半導体エネルギー研究所 半導体装置の作製方法

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