JP4811371B2 - 有機薄膜トランジスターおよび有機薄膜トランジスターの作製方法 - Google Patents
有機薄膜トランジスターおよび有機薄膜トランジスターの作製方法 Download PDFInfo
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- JP4811371B2 JP4811371B2 JP2007204246A JP2007204246A JP4811371B2 JP 4811371 B2 JP4811371 B2 JP 4811371B2 JP 2007204246 A JP2007204246 A JP 2007204246A JP 2007204246 A JP2007204246 A JP 2007204246A JP 4811371 B2 JP4811371 B2 JP 4811371B2
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/18—Tiled displays
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/129—Chiplets
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
なお、ディスプレイの電極に使用される薄膜トランジスターに関する技術が、例えば特許文献1に記載されている。
Id∝μWC/L
式中、μは半導体の移動度である。
Wはトランジスターチャンネル領域の幅である。
Lはトランジスターチャンネル領域の長さである。
Cはゲートのキャパシタンスである。
前記実施態様の1つによる表示装置が移動式パーソナルコンピュータに適用されている例を以下で説明する。
次に、表示装置が携帯電話の表示部分に適用されている例を説明する。図21は、携帯電話の配置を示す等角図である。この図では、携帯電話1200には、複数の操作キー1202、耳当て1204、マウスピース1206及び表示パネル100が取付けられている。この表示パネル100は、前述のように本発明に従って作製された表示パネルの使用が実施されている。
次に、ファインダーとしてOEL表示装置を使用しているディジタルスチルカメラを説明する。図22は、ディジタルスチルカメラカメラの配置及び外部装置への接続を手短に示す等角図である。
Claims (4)
- 有機薄膜トランジスターであって、
第1の方向に延在する複数の第1の領域と、前記第1の方向と直交する第2の方向に延在し複数の前記第1の領域を互いに連結する第2の領域と、を有する櫛様のソース領域と、
前記第1の方向に延在する複数の第3の領域と、前記第2の方向に延在し複数の前記第3の領域を互いに連結する第4の領域と、を有する櫛様のドレイン領域と、
平面視で前記ソース領域と前記ドレイン領域とに重なるように配置されたゲート電極と、を含み、
前記ソース領域の前記第1の領域と前記ドレイン領域の前記第3の領域は、互いにかみ合うように配置され、
前記ソース領域と前記ドレイン領域は、有機材料又はポリマー材料によって構成され、
全体は、可視光に対して透明であることを特徴とする有機薄膜トランジスター。 - 前記ソース領域に接するソース電極と、前記ドレイン領域に接するドレイン電極は、導電性有機材料によって構成されていることを特徴とする請求項1記載の有機薄膜トランジスター。
- 前記導電性有機材料は、可視光に対して透明であることを特徴とする請求項2記載の有機薄膜トランジスター。
- 請求項1から請求項3のいずれか一項に記載の薄膜トランジスターの作製方法であって、
インクジェット印刷、密着焼付印刷、スクリーン印刷又はフォトパターンニングを用いて前記ソース領域と前記ドレイン領域とを作製する工程を含むことを特徴とする有機薄膜トランジスターの作製方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0102434.8 | 2001-01-31 | ||
GB0102434A GB2371910A (en) | 2001-01-31 | 2001-01-31 | Display devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002561284A Division JP4254240B2 (ja) | 2001-01-31 | 2002-01-30 | 有機エレクトロルミネッセントディスプレイおよび電子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008016857A JP2008016857A (ja) | 2008-01-24 |
JP4811371B2 true JP4811371B2 (ja) | 2011-11-09 |
Family
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JP2002561284A Expired - Lifetime JP4254240B2 (ja) | 2001-01-31 | 2002-01-30 | 有機エレクトロルミネッセントディスプレイおよび電子装置 |
JP2007204246A Expired - Lifetime JP4811371B2 (ja) | 2001-01-31 | 2007-08-06 | 有機薄膜トランジスターおよび有機薄膜トランジスターの作製方法 |
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JP2002561284A Expired - Lifetime JP4254240B2 (ja) | 2001-01-31 | 2002-01-30 | 有機エレクトロルミネッセントディスプレイおよび電子装置 |
Country Status (9)
Country | Link |
---|---|
US (3) | US7068418B2 (ja) |
EP (2) | EP1850382A3 (ja) |
JP (2) | JP4254240B2 (ja) |
KR (1) | KR100522323B1 (ja) |
CN (2) | CN100409441C (ja) |
AU (1) | AU2002228186A1 (ja) |
GB (1) | GB2371910A (ja) |
TW (1) | TW569443B (ja) |
WO (1) | WO2002061837A2 (ja) |
Families Citing this family (119)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002215065A (ja) * | 2000-11-02 | 2002-07-31 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器 |
GB2371910A (en) | 2001-01-31 | 2002-08-07 | Seiko Epson Corp | Display devices |
TW543169B (en) * | 2002-02-08 | 2003-07-21 | Ritdisplay Corp | Package structure and process of organic light-emitting diode panel |
DE10212639A1 (de) * | 2002-03-21 | 2003-10-16 | Siemens Ag | Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen |
GB0218202D0 (en) * | 2002-08-06 | 2002-09-11 | Avecia Ltd | Organic light emitting diodes |
TW569409B (en) * | 2002-10-22 | 2004-01-01 | Ritek Display Technology Corp | Process for packaging an OLED panel |
US6753247B1 (en) * | 2002-10-31 | 2004-06-22 | Advanced Micro Devices, Inc. | Method(s) facilitating formation of memory cell(s) and patterned conductive |
WO2004042837A2 (de) * | 2002-11-05 | 2004-05-21 | Siemens Aktiengesellschaft | Organisches elektronisches bauteil mit hochaufgelöster strukturierung und herstellungsverfahren dazu |
US7256427B2 (en) * | 2002-11-19 | 2007-08-14 | Articulated Technologies, Llc | Organic light active devices with particulated light active material in a carrier matrix |
GB0316481D0 (en) * | 2003-07-15 | 2003-08-20 | Koninkl Philips Electronics Nv | Active matrix display |
GB0319714D0 (en) * | 2003-08-21 | 2003-09-24 | Philipp Harald | Anisotropic touch screen element |
DE10339036A1 (de) * | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
CN1842745B (zh) * | 2003-08-28 | 2013-03-27 | 株式会社半导体能源研究所 | 薄膜晶体管、薄膜晶体管的制造方法、以及显示器件的制造方法 |
KR100563058B1 (ko) * | 2003-11-21 | 2006-03-24 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 |
US7358530B2 (en) * | 2003-12-12 | 2008-04-15 | Palo Alto Research Center Incorporated | Thin-film transistor array with ring geometry |
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CN1460295A (zh) | 2003-12-03 |
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GB0102434D0 (en) | 2001-03-14 |
JP2004518994A (ja) | 2004-06-24 |
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AU2002228186A1 (en) | 2002-08-12 |
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