JP4785258B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4785258B2
JP4785258B2 JP2001065813A JP2001065813A JP4785258B2 JP 4785258 B2 JP4785258 B2 JP 4785258B2 JP 2001065813 A JP2001065813 A JP 2001065813A JP 2001065813 A JP2001065813 A JP 2001065813A JP 4785258 B2 JP4785258 B2 JP 4785258B2
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silicon film
film
impurity element
insulating film
group
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Expired - Fee Related
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JP2001065813A
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Japanese (ja)
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JP2001326364A5 (https=
JP2001326364A (ja
Inventor
節男 中嶋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
JP2001065813A 2000-03-10 2001-03-08 半導体装置及びその作製方法 Expired - Fee Related JP4785258B2 (ja)

Priority Applications (1)

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JP2001065813A JP4785258B2 (ja) 2000-03-10 2001-03-08 半導体装置及びその作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000066588 2000-03-10
JP2000066588 2000-03-10
JP2000-66588 2000-03-10
JP2001065813A JP4785258B2 (ja) 2000-03-10 2001-03-08 半導体装置及びその作製方法

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JP2001326364A JP2001326364A (ja) 2001-11-22
JP2001326364A5 JP2001326364A5 (https=) 2008-02-28
JP4785258B2 true JP4785258B2 (ja) 2011-10-05

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4599603B2 (ja) * 2003-02-12 2010-12-15 シャープ株式会社 トランジスタの製造方法
TWI220072B (en) 2003-02-19 2004-08-01 Toppoly Optoelectronics Corp TFT structure with LDD region and manufacturing process of the same
JP4510396B2 (ja) * 2003-03-28 2010-07-21 統寶光電股▲分▼有限公司 薄膜トランジスタの製造方法
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7911568B2 (en) * 2005-05-13 2011-03-22 Samsung Electronics Co., Ltd. Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel
US7928008B2 (en) * 2007-01-18 2011-04-19 Terasemicon Corporation Method for fabricating semiconductor device
JP2009260326A (ja) * 2008-03-26 2009-11-05 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置およびその製造方法
JP2009260329A (ja) * 2008-03-27 2009-11-05 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置およびその製造方法
KR101002666B1 (ko) * 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101733196B1 (ko) * 2010-09-03 2017-05-25 삼성디스플레이 주식회사 박막 트랜지스터, 이의 제조 방법, 및 이를 구비한 표시 장치
KR20130007283A (ko) * 2011-06-30 2013-01-18 삼성디스플레이 주식회사 박막 트랜지스터, 이를 구비한 표시 장치, 및 그 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297937B2 (ja) * 1992-10-16 2002-07-02 ソニー株式会社 半導体装置及びその製造方法
JP4115590B2 (ja) * 1998-06-11 2008-07-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000323484A (ja) * 1999-05-07 2000-11-24 Mitsubishi Electric Corp 半導体装置及び半導体記憶装置
JP4437570B2 (ja) * 1999-07-12 2010-03-24 株式会社ルネサステクノロジ 半導体装置及び半導体装置の製造方法

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