JP4778176B2 - 半導体装置および製造方法 - Google Patents

半導体装置および製造方法 Download PDF

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Publication number
JP4778176B2
JP4778176B2 JP2001517433A JP2001517433A JP4778176B2 JP 4778176 B2 JP4778176 B2 JP 4778176B2 JP 2001517433 A JP2001517433 A JP 2001517433A JP 2001517433 A JP2001517433 A JP 2001517433A JP 4778176 B2 JP4778176 B2 JP 4778176B2
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JP
Japan
Prior art keywords
layer
chip
partial
partial layer
wafer
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Expired - Fee Related
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JP2001517433A
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English (en)
Japanese (ja)
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JP2003507890A (ja
Inventor
ゲーベル ヘルベルト
ゲーベル フェスナ
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Robert Bosch GmbH
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Robert Bosch GmbH
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Publication of JP2003507890A publication Critical patent/JP2003507890A/ja
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Publication of JP4778176B2 publication Critical patent/JP4778176B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP2001517433A 1999-08-12 2000-07-08 半導体装置および製造方法 Expired - Fee Related JP4778176B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19938209A DE19938209B4 (de) 1999-08-12 1999-08-12 Halbleiteranordnung und Verfahren zur Herstellung
DE19938209.3 1999-08-12
PCT/DE2000/002235 WO2001013434A1 (de) 1999-08-12 2000-07-08 Halbleiterdiode und verfahren zur herstellung

Publications (2)

Publication Number Publication Date
JP2003507890A JP2003507890A (ja) 2003-02-25
JP4778176B2 true JP4778176B2 (ja) 2011-09-21

Family

ID=7918160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001517433A Expired - Fee Related JP4778176B2 (ja) 1999-08-12 2000-07-08 半導体装置および製造方法

Country Status (7)

Country Link
US (1) US6716714B1 (de)
EP (1) EP1208604B1 (de)
JP (1) JP4778176B2 (de)
CZ (1) CZ2002475A3 (de)
DE (2) DE19938209B4 (de)
HU (1) HUP0202476A2 (de)
WO (1) WO2001013434A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19942879A1 (de) * 1999-09-08 2001-03-15 Bosch Gmbh Robert Halbleiterelement und Verfahren zur Herstellung des Halbleiterbauelements
DE10243813A1 (de) * 2002-09-20 2004-04-01 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zu ihrer Herstellung
JP5044117B2 (ja) 2005-12-14 2012-10-10 関西電力株式会社 炭化珪素バイポーラ型半導体装置
JP2014041920A (ja) * 2012-08-22 2014-03-06 Rohm Co Ltd 半導体装置
DE102017209590A1 (de) 2017-06-07 2018-12-13 Robert Bosch Gmbh PN-Diode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706129A (en) * 1970-07-27 1972-12-19 Gen Electric Integrated semiconductor rectifiers and processes for their fabrication
JPH0738123A (ja) * 1993-06-23 1995-02-07 Robert Bosch Gmbh 半導体装置及びその製造方法
JPH11214710A (ja) * 1998-01-22 1999-08-06 Sansha Electric Mfg Co Ltd 電力用半導体装置
JP2002502115A (ja) * 1998-01-21 2002-01-22 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ダイオードの製造方法
JP2002538627A (ja) * 1999-02-26 2002-11-12 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 多層ダイオード、並びに多層ダイオードを製造するための方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19538853A1 (de) * 1995-10-19 1997-04-24 Bosch Gmbh Robert Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
DE19857243A1 (de) * 1998-01-21 1999-07-22 Bosch Gmbh Robert Verfahren zur Herstellung von Dioden
US7186609B2 (en) * 1999-12-30 2007-03-06 Siliconix Incorporated Method of fabricating trench junction barrier rectifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706129A (en) * 1970-07-27 1972-12-19 Gen Electric Integrated semiconductor rectifiers and processes for their fabrication
JPH0738123A (ja) * 1993-06-23 1995-02-07 Robert Bosch Gmbh 半導体装置及びその製造方法
JP2002502115A (ja) * 1998-01-21 2002-01-22 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ダイオードの製造方法
JPH11214710A (ja) * 1998-01-22 1999-08-06 Sansha Electric Mfg Co Ltd 電力用半導体装置
JP2002538627A (ja) * 1999-02-26 2002-11-12 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 多層ダイオード、並びに多層ダイオードを製造するための方法

Also Published As

Publication number Publication date
HUP0202476A2 (en) 2002-12-28
DE19938209A1 (de) 2001-02-15
EP1208604B1 (de) 2006-10-25
DE19938209B4 (de) 2007-12-27
EP1208604A1 (de) 2002-05-29
WO2001013434A1 (de) 2001-02-22
JP2003507890A (ja) 2003-02-25
CZ2002475A3 (cs) 2002-06-12
US6716714B1 (en) 2004-04-06
DE50013669D1 (de) 2006-12-07

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