JP4761868B2 - スパッタリングターゲット、その製造方法及び透明導電膜 - Google Patents

スパッタリングターゲット、その製造方法及び透明導電膜 Download PDF

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Publication number
JP4761868B2
JP4761868B2 JP2005217432A JP2005217432A JP4761868B2 JP 4761868 B2 JP4761868 B2 JP 4761868B2 JP 2005217432 A JP2005217432 A JP 2005217432A JP 2005217432 A JP2005217432 A JP 2005217432A JP 4761868 B2 JP4761868 B2 JP 4761868B2
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Prior art keywords
sputtering target
target
metal
conductive film
sputtering
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Expired - Fee Related
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JP2005217432A
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English (en)
Japanese (ja)
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JP2007031786A (ja
Inventor
公規 矢野
一吉 井上
信夫 田中
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Priority to JP2005217432A priority Critical patent/JP4761868B2/ja
Priority to KR1020087002030A priority patent/KR101302332B1/ko
Priority to CN2006800269295A priority patent/CN101233258B/zh
Priority to PCT/JP2006/314550 priority patent/WO2007013387A1/ja
Priority to TW095127511A priority patent/TWI394852B/zh
Publication of JP2007031786A publication Critical patent/JP2007031786A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
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  • Electroluminescent Light Sources (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
JP2005217432A 2005-07-27 2005-07-27 スパッタリングターゲット、その製造方法及び透明導電膜 Expired - Fee Related JP4761868B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005217432A JP4761868B2 (ja) 2005-07-27 2005-07-27 スパッタリングターゲット、その製造方法及び透明導電膜
KR1020087002030A KR101302332B1 (ko) 2005-07-27 2006-07-24 스퍼터링 타겟, 그의 제조 방법 및 투명 도전막
CN2006800269295A CN101233258B (zh) 2005-07-27 2006-07-24 溅射靶、其制造方法以及透明导电膜
PCT/JP2006/314550 WO2007013387A1 (ja) 2005-07-27 2006-07-24 スパッタリングターゲット、その製造方法及び透明導電膜
TW095127511A TWI394852B (zh) 2005-07-27 2006-07-27 A sputtering target, a method for manufacturing the same, and a transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005217432A JP4761868B2 (ja) 2005-07-27 2005-07-27 スパッタリングターゲット、その製造方法及び透明導電膜

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JP2007031786A JP2007031786A (ja) 2007-02-08
JP4761868B2 true JP4761868B2 (ja) 2011-08-31

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JP (1) JP4761868B2 (zh)
KR (1) KR101302332B1 (zh)
CN (1) CN101233258B (zh)
TW (1) TWI394852B (zh)
WO (1) WO2007013387A1 (zh)

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JP4552950B2 (ja) 2006-03-15 2010-09-29 住友金属鉱山株式会社 ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜
CN103274608A (zh) 2007-05-07 2013-09-04 出光兴产株式会社 半导体薄膜、半导体薄膜的制备方法和半导体元件
JPWO2009078329A1 (ja) * 2007-12-19 2011-04-28 日立金属株式会社 酸化亜鉛焼結体およびその製造方法、スパッタリングターゲット、電極
JP4982423B2 (ja) * 2008-04-24 2012-07-25 株式会社日立製作所 酸化亜鉛薄膜形成用スパッタターゲットと、それを用いて得られる酸化亜鉛薄膜を有する表示素子及び太陽電池
CN104926289A (zh) * 2008-12-12 2015-09-23 出光兴产株式会社 复合氧化物烧结体及由其构成的溅射靶
CN101775576A (zh) * 2009-01-12 2010-07-14 上海广电电子股份有限公司 ZnO基粉末-金属复合溅射靶材及其制备方法
TW201112265A (en) * 2009-09-22 2011-04-01 chuan-sheng Lv Method of manufacturing transparent conductive thin films for flexible polymer substrate and transparent conductive thin films
JP4875135B2 (ja) * 2009-11-18 2012-02-15 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ−Ｏ系スパッタリングターゲット
JP5545448B2 (ja) * 2010-09-29 2014-07-09 三菱マテリアル株式会社 スパッタリングターゲット
JP5651095B2 (ja) 2010-11-16 2015-01-07 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
JP5460619B2 (ja) * 2011-01-13 2014-04-02 住友重機械工業株式会社 ターゲット、およびこれを備えた成膜装置
JP6212869B2 (ja) * 2012-02-06 2017-10-18 三菱マテリアル株式会社 酸化物スパッタリングターゲット
JP2012229490A (ja) * 2012-07-12 2012-11-22 Fujifilm Corp 成膜方法
JP2014167163A (ja) * 2013-01-31 2014-09-11 Nitto Denko Corp 赤外線反射フィルムの製造方法
JP2014167162A (ja) * 2013-01-31 2014-09-11 Nitto Denko Corp 赤外線反射フィルムの製造方法
CN103304220B (zh) * 2013-06-04 2014-10-22 信利半导体有限公司 靶材及其制备方法、显示装置
JP6282142B2 (ja) * 2014-03-03 2018-02-21 日東電工株式会社 赤外線反射基板およびその製造方法
JP6159867B1 (ja) * 2016-12-22 2017-07-05 Ｊｘ金属株式会社 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法
JP6859841B2 (ja) * 2017-05-12 2021-04-14 住友金属鉱山株式会社 Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法
KR102192713B1 (ko) * 2018-09-08 2020-12-17 바짐테크놀로지 주식회사 박막 증착용 스퍼터링 타겟 조성물 및 이의 제조방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02115326A (ja) * 1988-10-21 1990-04-27 Mitsubishi Metal Corp 良導電性インジウムースズ酸化物焼結体の製造法
JPH09282945A (ja) * 1996-04-16 1997-10-31 Idemitsu Kosan Co Ltd 透明導電膜およびその製造方法
JPH1136066A (ja) * 1997-07-15 1999-02-09 Nippon Telegr & Teleph Corp <Ntt> スパッタリング用ターゲット
JPH11511510A (ja) * 1995-08-31 1999-10-05 イノベイティブ スパッタリング テクノロジー Ｉｔｏ合金物品の製造法
JP2001262326A (ja) * 2000-03-16 2001-09-26 Nikko Materials Co Ltd 酸化インジウム−金属錫混合粉末及び同混合粉末を原料とするｉｔｏスパッタリングターゲット並びに同ターゲットの製造方法
JP2004030934A (ja) * 2002-06-21 2004-01-29 Idemitsu Kosan Co Ltd スパッタリングターゲット及びそれを利用した導電膜の製造方法及びその製造方法で成膜した透明導電膜
WO2004105054A1 (ja) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. 非晶質透明導電膜、及びその原料スパッタリングターゲット、及び非晶質透明電極基板、及びその製造方法、及び液晶ディスプレイ用カラーフィルタ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450258A (en) * 1987-08-21 1989-02-27 Sumitomo Metal Mining Co Production of thin film of high-refractive index dielectric material
JP3721080B2 (ja) * 1999-05-10 2005-11-30 株式会社日鉱マテリアルズ スパッタリングターゲット及びその製造方法
JP2001076329A (ja) * 1999-09-07 2001-03-23 Fuji Electric Co Ltd 磁気記録媒体およびその製造方法
CN100396813C (zh) * 2002-08-02 2008-06-25 出光兴产株式会社 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02115326A (ja) * 1988-10-21 1990-04-27 Mitsubishi Metal Corp 良導電性インジウムースズ酸化物焼結体の製造法
JPH11511510A (ja) * 1995-08-31 1999-10-05 イノベイティブ スパッタリング テクノロジー Ｉｔｏ合金物品の製造法
JPH09282945A (ja) * 1996-04-16 1997-10-31 Idemitsu Kosan Co Ltd 透明導電膜およびその製造方法
JPH1136066A (ja) * 1997-07-15 1999-02-09 Nippon Telegr & Teleph Corp <Ntt> スパッタリング用ターゲット
JP2001262326A (ja) * 2000-03-16 2001-09-26 Nikko Materials Co Ltd 酸化インジウム−金属錫混合粉末及び同混合粉末を原料とするｉｔｏスパッタリングターゲット並びに同ターゲットの製造方法
JP2004030934A (ja) * 2002-06-21 2004-01-29 Idemitsu Kosan Co Ltd スパッタリングターゲット及びそれを利用した導電膜の製造方法及びその製造方法で成膜した透明導電膜
WO2004105054A1 (ja) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. 非晶質透明導電膜、及びその原料スパッタリングターゲット、及び非晶質透明電極基板、及びその製造方法、及び液晶ディスプレイ用カラーフィルタ

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