CN101233258B - 溅射靶、其制造方法以及透明导电膜 - Google Patents
溅射靶、其制造方法以及透明导电膜 Download PDFInfo
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- CN101233258B CN101233258B CN2006800269295A CN200680026929A CN101233258B CN 101233258 B CN101233258 B CN 101233258B CN 2006800269295 A CN2006800269295 A CN 2006800269295A CN 200680026929 A CN200680026929 A CN 200680026929A CN 101233258 B CN101233258 B CN 101233258B
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011787 zinc oxide Substances 0.000 claims abstract description 15
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011701 zinc Substances 0.000 claims description 44
- 238000000576 coating method Methods 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 24
- 229910052738 indium Inorganic materials 0.000 claims description 23
- 239000000843 powder Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract 2
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
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- 238000004544 sputter deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 230000008676 import Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
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- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
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- 238000007088 Archimedes method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017488 Cu K Inorganic materials 0.000 description 1
- 229910017541 Cu-K Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
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- 238000005054 agglomeration Methods 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
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- 208000018875 hypoxemia Diseases 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
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- 238000000092 stir-bar solid-phase extraction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
一种溅射靶,是包含氧化锌及氧化锡,或者氧化锌、氧化锡及氧化铟的溅射靶,金属或合金分散存在于整个溅射靶中。
Description
技术领域
本发明涉及一种溅射靶、其制造方法以及透明导电膜。更具体地说,本发明涉及一种减少稀有资源铟的使用量或不使用铟的溅射靶等。
背景技术
从显示性能、节能等观点来看,液晶显示器(LCD)和有机电致发光(EL)显示器已经成为手机和移动信息终端(PDA)、计算机和便携式计算机、电视等的显示器的主流。而用于这些设备的透明导电膜,则以铟锡氧化物(以下称为“ITO”)膜为主流。然而,由于ITO膜采用大量(一般占到90质量%左右)的铟,而铟是稀有资源,存在供应不稳定的问题,另外铟还具有一定的毒性,因此,为了使采用透明电极的显示器件得到进一步普及,重要的是开发出一种铟的使用量少的透明导电膜。
作为减少铟使用量或不使用铟的透明导电膜,正在研究的有以氧化锌-氧化锡为主成分的透明导电膜(例如,参考特许文献1)。
但在这种透明导电膜中,存在电阻高,电阻的面内分布大等问题,然而如何解决这些问题尚未得到研究。
作为ITO的溅射靶,公开有将含氧量设为一定值以上而实现低电阻化的技术(例如,参考特许文献2)。
但对于削减了铟使用量的溅射靶的含氧量尚未进行研究。
另外,公开了一种由金属氧化物的部位和金属的部位构成的溅射靶(例如,参考特许文献3)。
但是,并未对向削减了铟的靶材造成的影响进行研究。另外,由金属氧化物的部位和金属的部位构成的溅射靶,是使金属氧化物靶材和金属靶材或金属线复合而成,为了适用于削减了铟的靶材,存在靶材自身电阻高,溅射时的放电不稳定,溅射速度慢等问题。
特许文献1:特开平8-171824号公报
特许文献2:特开2000-256842号公报
特许文献3:特开2004-030934号公报
本发明正是鉴于上述问题而设计的,其目的在于,提供一种即使削减了铟的使用量,也能够获得低电阻的透明导电膜的溅射靶及其制造方法。
发明内容
本发明的发明人员,为了克服上述问题进行了反复的深入研究,结果发现,通过在构成溅射靶的金属原子及氧原子中,将氧原子数量设为少于金属原子构成氧化物时的化学计算量,即使削减铟的使用量,也能够获得一种低电阻的透明导电膜。另外,还发现通过使没有被氧化的金属或合金分散到溅射靶中,可以稳定地制造出含氧量少的靶材,并且可以降低靶材的电阻,从而完成本发明。
根据本发明,可以提供以下的溅射靶、其制造方法、透明导电膜及透明电极。
1.一种溅射靶,其包含氧化锌及氧化锡,或者氧化锌、氧化锡及氧化铟,其中,未氧化的金属或合金分散存在于整个溅射靶中,
并且,满足下式(1)和(2),
0≤MIn/(MZn+MSn+MIn)≤0.7 (1)
0.65≤MZn/(MZn+MSn)≤0.9 (2)
式中的MZn、MSn及MIn分别表示溅射靶中的Zn、Sn及In的原子数。
2.根据1所述的溅射靶,其中,所述未氧化的金属或合金是Zn、Sn、In、Ga、Ge、Cd、Nd、Sm、Ce、Eu、Ag、Au、Al以及以它们为主成分的合金的任一种。
3.根据1所述的溅射靶,其中,还满足下式(3):
Mo/(MZn+MSn×2+MIn×1.5)≤0.99 (3)
式中的MZn、MSn、Mo及MIn分别表示溅射靶中的Zn、Sn、O及In的原子数。
4.根据1所述的溅射靶,其中,所述溅射靶中的所述金属或合金的含有率为0.1~6质量%。
5.根据1所述的溅射靶,其中,包含由氧化铟和氧化锌构成的作为六方晶型层状化合物的In2O3(ZnO)m,其中,m为3~20中的整数。
6.根据1所述的溅射靶,其中,所述溅射靶的体电阻率低于100mΩ1cm。
7.根据1所述的溅射靶,其中,所述溅射靶的密度为5.3~7.2g/cm3。
8.一种1~7中任一项所述的溅射靶的制造方法,其中,包括对金属氧化物粉末和金属粉末进行混合的工序。
9.一种透明导电膜,其中,使用1~7中任一项所述的溅射靶制成。
10.一种透明电极,其中,其通过对9所述的透明导电膜进行蚀刻而制成。
通过本发明的溅射靶,即使削减铟使用量,也可以获得低电阻的透明导电膜。
附图说明
图1是表示Zn金属粉末量和靶材的体电阻率的关系曲线图。
图2是表示Zn金属粉末量和透明导电膜的比电阻值的关系曲线图。
具体实施方式
以下,对本发明的溅射靶进行具体说明。
本发明的溅射靶具有金属或合金分散在至少包含氧化锌及氧化锡的氧化物整体中的形态。因此,即使削减铟使用量,也可以获得低电阻的透明导电膜。另外,通过使没有被氧化的金属或合金分散在溅射靶中,可以降低靶材的电阻。
作为金属或者合金,只要在不损害本发明的性能的范围内,并不做特殊的限制。优选采用烧结温度较靶材低的材料,通常采用熔点在1300℃以下、优选未1000℃以下、更优选为800℃以下、进一步优选为600℃以下的金属或合金。熔点在1300℃以下的话,烧结时产生熔融,使靶材的密度提高,因此靶材的电阻容易下降。
另外,也可以优选采用具有导电性的金属氧化物。例如可以优选使用Zn、Sn、In、Ga、Ge、Cd、Nd、Sm、Ce、Eu、Ag、Au、Al以及以它们为主成分的合金。特别优选使用Zn、Sn或者In。此外,也可以将这些金属或合金多种混合后使用。
优选为金属或合金形成500μm以下的凝集体,分散在整个靶材中。镁)、分散剂(聚丙烯酸铵等)、粘结剂、润滑剂(硬脂酸乳剂等)。
可以通过X射线衍射的峰值判断金属或合金的存在。另外,其分散状态可以通过电子探针显微分析方法(EPMA)的面分析发现的金属原子的凝集部或低氧部分而进行确认。另外,所谓“分散于整体”是指在任意的5000μm角的范围内,可以确认到1个以上的500μm以下的金属或合金的状态。
此外,金属或合金分散的状态可以通过后述的制造方法实现。
金属或合金在溅射靶中的含量,优选为0.1~6质量%,更优选为0.2~4质量%,特优选为0.3~3质量%。当少于0.1质量%时,或者不会出现本发明的效果,或者有可能出现白斑;多于6质量%时,会变为氧不足,反而可能导致电阻增大或透明性下降。
可以通过X射线衍射仪(XRD)确认溅射靶中是否包含没有氧化的金属或合金。
本发明的溅射靶,优选满足下述公式(1)及(2):
0.65≤MZn/(MZn+MSn)≤0.9 (1)
0≤MIn/(MZn+MSn+MIn)≤0.7 (2)
(公式中的MZn、MSn及MIn分别表示溅射靶中的Zn、Sn及In的原子数。)
上述公式(1)的值[MZn/(MZn+MSn)],规定溅射靶中的Zn和Sn的存在比例。该值小于0.65时,靶材中所占的Sn量变多,SnO2产生凝集,有可能成为成膜时充电而产生异常放电的原因。另一方面,该值大于0.9时,有可能导致耐酸性下降。MZn/(MZn+MSn)的值优选为0.7~0.85,更优选为0.7~0.8。
公式(2)规定溅射靶中的In含量。考虑到本发明的目的,优选为减少In的使用量,但通过添加In,可以降低靶材及成膜后的薄膜的电阻。MIn/(MZn+MSn+MIn)的值优选为0.05~0.6,较优选为0.1~0.45,更优选为0.15~0.35,特优选为0.25~0.35。
优选为本发明的溅射靶还满足下述公式(3)
Mo/(MZn+MSn×2+MIn×1.5)≤0.99 (3)
(公式中的MZn、MSn、Mo及MIn分别表示溅射靶中的Zn、Sn、O及In的原子数。)
公式(3)规定溅射靶中的氧原子(O)的量。公式(3)的分母表示各金属原子构成氧化物(ZnO、SnO2、In2O3)时的氧原子数。如果公式(3)的值,即溅射靶中包含的氧原子数和全部的金属原子构成氧化物时的氧原子数之比为0.99以下,即使减少In的使用量或者不使用In,也可以获得一种能够制备低电阻的透明导电膜的溅射靶。此外,公式(3)的值优选为0.8~0.98,更优选为0.9~0.97。该值小于0.8时,有可能导致成膜后的导电膜着色。
如此,通过控制靶材中的含氧量,可以降低溅射薄膜的电阻,但其真正的原因尚未搞清。但是,在现有的方法中,可以推断为由于比Sn及In还轻的Zn原子,没有进行反溅射和成膜就被排出,从而导致膜中的氧含量过剩。
此外,上述公式(1)~(3)的值可以通过电子探针显微分析方法(EPMA)对溅射靶进行组成分析得出的各原子的存在比的值算出。
作为本发明的溅射靶的制造方法,例如可以采用向各金属氧化物的混合粉体中,再混入金属或合金的粉体后进行烧结的方法。通过采用金属粉体,可以容易地控制靶材中的含氧量。另外,由于靶材自身的电阻下降,使溅射速度加快,可以进行稳定的溅射。再者,金属粉体还具有使膜中的氧缺陷稳定化,生成载体使膜低电阻化的功能。
此外,为了对因溅射装置的不同和溅射条件造成的差异进行调整,也可以使烧结时处于氧略微不足的状态,在溅射时导入少量的氧化性气体而进行调整。
向各金属氧化物的混合粉体中混入金属或者合金的粉体进行烧结时,粉末的粒径为500μm以下,优选为100μm以下,更优选为10μm以下,特优选为5μm以下。大于500μm时,不能与其他的原料粉末进行均匀的混合,因此有可能不能形成金属或合金分散到靶材中的形态,或者导致靶材的电阻变高。
此外,粒径是通过光散射当量直径(JIS R 1629)测得的值。
在本发明中,除了上述的各种金属氧化物的粉体及金属粉体之外,只要在不损害本发明的目的的范围内,也可以添加烧结助剂(氧化钇、氧化镁)、分散剂(聚丙烯酸铵等)、粘结剂、润滑剂(硬脂酸乳剂等)。
本发明的溅射靶,优选包含由氧化铟、氧化锌构成的六方晶相层状化合物(In2O3(ZnO)m∶m为3~20的整数)。包含这种构造,可以提高烧结密度,并使靶材的电阻容易下降。
可以通过上述的制造方法获得这种构造。另,构造的解析通过X射线衍射仪(XRD)进行。
本发明的溅射靶的体电阻率优选为0.2~100mΩ·cm未满。体电阻值在该范围内时,可以使溅射时的放电保持稳定,并使溅射速度加快。该体电阻值更优选为0.4~20mΩ·cm以下,特优选为0.6~10mΩ·cm以下。
另外,溅射靶的密度优选为5.3~7.2g/cm3,更优选为6.1~7.0g/cm3,特优选为6.4~6.8g/cm3。满足该值的话,可以使溅射时的放电保持稳定,并提高成膜速度。
本发明的透明导电膜,可以通过采用通常的方法对上述本发明的溅射靶进行溅射成膜而制成。另外,通过用包含草酸或磷酸的混合酸等的蚀刻液对该透明导电膜进行蚀刻,可以制成透明电极。
以下,参考实施例对本发明进行更具体的说明。粒径是通过激光衍射散射法测得的值。
实施例1
以表1所述的混合比将氧化锌粉末(粒径1μm以下)、氧化锡粉末(粒径0.4μm以下)以及金属锌粉末(粒径5μm以下)装入到聚乙烯制的罐内,用干式球磨进行72小时的混合,制成混合粉末。
将该混合粉末装入到模具中,用300kg/cm2的压力进行冲压,制成成形体。用3ton/cm2的压力进行CIP成型(冷等静压成型),对该成形体进行致密化处理。其次,将该成形体放置在纯氧气氛烧结炉中,在以下条件下进行烧结。
(烧结条件)
烧结温度:1450℃;升温速度:25℃/Hr;烧结时间:6小时;导入烧结炉的气体:氧;导入气体压力:30mmH2O(计示压力);导入气体线速:2.6cm/分;准备重量/气体流量:0.4kg·min/L;气体导入开始温度(升温时):400℃;气体导入停止温度(降温时):400℃。
通过阿基米德定律法对制成的烧结体密度进行了测量,结果为5.5g/cm3。
用电子探针显微分析方法(EPMA)对该烧结体的组成进行了分析。结果发现氧原子数相对于金属原子数的总数之比(O/(Zn+Sn+In))为1.18。另外,通过四端子法测得的靶材的体电阻率为80mΩ·cm。
再用X射线衍射仪(XRD)对靶材进行解析,可以确认到源自金属Zn的峰值。
另外,通过EPMA的面分析,确认到在5000μm角的范围内,5~50μm的金属原子产生凝集,且分散存在有100个以上的氧含量低的部分。
此外,EPMA及XRD的测量条件设定如下。
·EPMA
使用装置:岛津制作所制造的电子束微量分析仪EPMA-2300
加速电压:15kV;试料电流:0.05μm;Beam Size:1μm;Area Size:68.4×68.4μm;Step Size:0.2×0.2μm;测量元素:Zn、Sn、O;SBSE(反射电子像)
·XRD
使用装置:株式会社Rigaku制造的Ultima-III
通过湿式加工法,将该烧结体加工成厚6mm的烧结体,用铟焊料将其与无氧铜制的贴板接合后制成靶材。
使用该靶材,通过溅射在厚0.7mm的玻璃基板(Coming公司制造、#7059)上形成透明导电膜。溅射条件入下所示。
(溅射条件)
RF电量:110W;气体压力:0.3Pa;溅射气体:Ar、100%;膜厚:100nm;基板温度:200℃。
通过四端子法对制备的导电膜的比电阻率进行了测量,结果为50mΩ·cm。另外,该导电膜在波长为550nm中的光透过率为90%。此外,率是指以空气作为参考,包含玻璃基板在内的透过率测量值。
溅射靶的原料组成、组成分析、溅射条件、透明导电膜的组成及性状等如表1所示。
通过X线衍射仪(XRD)对构造进行了测量。
膜组成是指在膜中包含的所有金属原子中各金属原子所占的值。
实施例2、3:比较例1~3
除了将原料的组成比如表1所示进行变更外,与实施例1同样制成靶材,进行溅射成膜。
结果如表1所示。
评估例
在溅射靶的原料组成中,除了使Zn金属粉末的量在0~4wt%的范围内变化,相应地对ZnO粉末的量进行调整之外,与实施例3同样制成靶,进行溅射成膜。
对于制备的透明导电膜,对Zn金属粉末量与靶材的体电阻值的关系,以及Zn金属粉末量与透明导电膜的比电阻值的关系进行了评估。结果分别如图1及图2所示。
产业上的应用可能性
使用本发明的溅射靶成膜的透明导电膜,可以适用于液晶显示装置、EL显示装置等各种显示装置的透明电极。
Claims (10)
1.一种溅射靶,其包含氧化锌及氧化锡,或者氧化锌、氧化锡及氧化铟,其中,未氧化的金属或合金分散存在于整个溅射靶中,
并且,满足下式(1)和(2),
0≤MIn/(MZn+MSn+MIn)≤0.7 (1)
0.65≤MZn/(MZn+MSn)≤0.9 (2)
式中的MZn、MSn及MIn分别表示溅射靶中的Zn、Sn及In的原子数。
2.根据权利要求1所述的溅射靶,其中,所述未氧化的金属或合金是Zn、Sn、In、Ga、Ge、Cd、Nd、Sm、Ce、Eu、Ag、Au、Al以及以它们为主成分的合金的任一种。
3.根据权利要求1所述的溅射靶,其中,还满足下式(3):
Mo/(MZn+MSn×2+MIn×1.5)≤0.99 (3)
式中的MZn、MSn、Mo及MIn分别表示溅射靶中的Zn、Sn、O及In的原子数。
4.根据权利要求1所述的溅射靶,其中,所述溅射靶中的所述金属或合金的含有率为0.1~6质量%。
5.根据权利要求1所述的溅射靶,其中,包含由氧化铟和氧化锌构成的作为六方晶型层状化合物的In2O3(ZnO)m,其中,m为3~20中的整数。
6.根据权利要求1所述的溅射靶,其中,所述溅射靶的体电阻率低于100mΩ·cm。
7.根据权利要求1所述的溅射靶,其中,所述溅射靶的密度为5.3~7.2g/cm3。
8.一种权利要求1~7中任一项所述的溅射靶的制造方法,其中,包括对金属氧化物粉末和金属粉末进行混合的工序。
9.一种透明导电膜,其中,使用权利要求1~7中任一项所述的溅射靶制成。
10.一种透明电极,其中,其通过对权利要求9所述的透明导电膜进行蚀刻而制成。
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JP (1) | JP4761868B2 (zh) |
KR (1) | KR101302332B1 (zh) |
CN (1) | CN101233258B (zh) |
TW (1) | TWI394852B (zh) |
WO (1) | WO2007013387A1 (zh) |
Cited By (1)
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CN103304220A (zh) * | 2013-06-04 | 2013-09-18 | 信利半导体有限公司 | 靶材及其制备方法、显示装置 |
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JP4552950B2 (ja) | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
US9249032B2 (en) | 2007-05-07 | 2016-02-02 | Idemitsu Kosan Co., Ltd. | Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element |
JPWO2009078329A1 (ja) * | 2007-12-19 | 2011-04-28 | 日立金属株式会社 | 酸化亜鉛焼結体およびその製造方法、スパッタリングターゲット、電極 |
JP4982423B2 (ja) * | 2008-04-24 | 2012-07-25 | 株式会社日立製作所 | 酸化亜鉛薄膜形成用スパッタターゲットと、それを用いて得られる酸化亜鉛薄膜を有する表示素子及び太陽電池 |
KR101254906B1 (ko) | 2008-12-12 | 2013-04-18 | 이데미쓰 고산 가부시키가이샤 | 복합 산화물 소결체 및 그것으로 이루어지는 스퍼터링 타겟 |
CN101775576A (zh) * | 2009-01-12 | 2010-07-14 | 上海广电电子股份有限公司 | ZnO基粉末-金属复合溅射靶材及其制备方法 |
TW201112265A (en) * | 2009-09-22 | 2011-04-01 | chuan-sheng Lv | Method of manufacturing transparent conductive thin films for flexible polymer substrate and transparent conductive thin films |
JP4875135B2 (ja) * | 2009-11-18 | 2012-02-15 | 出光興産株式会社 | In−Ga−Zn−O系スパッタリングターゲット |
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JP5651095B2 (ja) | 2010-11-16 | 2015-01-07 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット |
JP5460619B2 (ja) * | 2011-01-13 | 2014-04-02 | 住友重機械工業株式会社 | ターゲット、およびこれを備えた成膜装置 |
JP6212869B2 (ja) * | 2012-02-06 | 2017-10-18 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット |
JP2012229490A (ja) * | 2012-07-12 | 2012-11-22 | Fujifilm Corp | 成膜方法 |
JP2014167163A (ja) * | 2013-01-31 | 2014-09-11 | Nitto Denko Corp | 赤外線反射フィルムの製造方法 |
JP2014167162A (ja) * | 2013-01-31 | 2014-09-11 | Nitto Denko Corp | 赤外線反射フィルムの製造方法 |
JP6282142B2 (ja) * | 2014-03-03 | 2018-02-21 | 日東電工株式会社 | 赤外線反射基板およびその製造方法 |
JP6159867B1 (ja) * | 2016-12-22 | 2017-07-05 | Jx金属株式会社 | 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法 |
JP6859841B2 (ja) * | 2017-05-12 | 2021-04-14 | 住友金属鉱山株式会社 | Sn−Zn−O系酸化物焼結体とその製造方法 |
KR102192713B1 (ko) * | 2018-09-08 | 2020-12-17 | 바짐테크놀로지 주식회사 | 박막 증착용 스퍼터링 타겟 조성물 및 이의 제조방법 |
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AU707146B2 (en) * | 1995-08-31 | 1999-07-01 | Innovative Sputtering Technology | A process for manufacturing ITO alloy articles |
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JPH1136066A (ja) * | 1997-07-15 | 1999-02-09 | Nippon Telegr & Teleph Corp <Ntt> | スパッタリング用ターゲット |
JP2001076329A (ja) * | 1999-09-07 | 2001-03-23 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
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JP4023728B2 (ja) * | 2002-06-21 | 2007-12-19 | 出光興産株式会社 | スパッタリングターゲット及びそれを利用した導電膜の製造方法及びその製造方法で成膜した透明導電膜 |
CN100396813C (zh) * | 2002-08-02 | 2008-06-25 | 出光兴产株式会社 | 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底 |
EP1626416A4 (en) * | 2003-05-20 | 2007-11-07 | Idemitsu Kosan Co | AMORPHOUS TRANSPARENT CONDUCTIVE FILM, SPRAY TARGET AS A RAW MATERIAL, AMORPHOUS TRANSPARENT ELECTRODE SUBSTRATE, PROCESS FOR PRODUCING THE SAME, AND COLOR FILTER FOR A LIQUID CRYSTAL DISPLAY |
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- 2006-07-24 WO PCT/JP2006/314550 patent/WO2007013387A1/ja active Application Filing
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Cited By (2)
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CN103304220A (zh) * | 2013-06-04 | 2013-09-18 | 信利半导体有限公司 | 靶材及其制备方法、显示装置 |
CN103304220B (zh) * | 2013-06-04 | 2014-10-22 | 信利半导体有限公司 | 靶材及其制备方法、显示装置 |
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KR20080032121A (ko) | 2008-04-14 |
TWI394852B (zh) | 2013-05-01 |
CN101233258A (zh) | 2008-07-30 |
TW200714724A (en) | 2007-04-16 |
JP2007031786A (ja) | 2007-02-08 |
KR101302332B1 (ko) | 2013-08-30 |
JP4761868B2 (ja) | 2011-08-31 |
WO2007013387A1 (ja) | 2007-02-01 |
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