JPS6450258A - Production of thin film of high-refractive index dielectric material - Google Patents

Production of thin film of high-refractive index dielectric material

Info

Publication number
JPS6450258A
JPS6450258A JP62207937A JP20793787A JPS6450258A JP S6450258 A JPS6450258 A JP S6450258A JP 62207937 A JP62207937 A JP 62207937A JP 20793787 A JP20793787 A JP 20793787A JP S6450258 A JPS6450258 A JP S6450258A
Authority
JP
Japan
Prior art keywords
target
thin film
compd
refractive index
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62207937A
Other languages
Japanese (ja)
Inventor
Mikihiko Ito
Koichi Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP62207937A priority Critical patent/JPS6450258A/en
Publication of JPS6450258A publication Critical patent/JPS6450258A/en
Pending legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To stably form a thin film having a high refractive index by uniformly dispersing a desired compd. and the simple substance metals of the metal elements constituting the compd. to produce a target and forming the thin film by a sputtering method using such target. CONSTITUTION:The target is produced by using the target compsn. compd. prepd. by previously and uniformly dispersing the powders of the simple substance metals which are the constituting elements of the target material. The thin film contg. the metallic substances at the ratio higher than the ratio of the stoichiometric compsn. is formed by executing the sputtering using the target made to contain the excess metallic substances over the entire part of the target. The compd. to be used is the oxide, nitride, sulfide, and fluoride of a wide ranges of the metal elements such as group II-V of periodic table and lanthanoids and is exemplified by niobium pentaoxide, aluminum oxide and magnesium fluoride. The thin film having the high refractive index is thereby stably formed with less fluctuations.
JP62207937A 1987-08-21 1987-08-21 Production of thin film of high-refractive index dielectric material Pending JPS6450258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207937A JPS6450258A (en) 1987-08-21 1987-08-21 Production of thin film of high-refractive index dielectric material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207937A JPS6450258A (en) 1987-08-21 1987-08-21 Production of thin film of high-refractive index dielectric material

Publications (1)

Publication Number Publication Date
JPS6450258A true JPS6450258A (en) 1989-02-27

Family

ID=16548007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207937A Pending JPS6450258A (en) 1987-08-21 1987-08-21 Production of thin film of high-refractive index dielectric material

Country Status (1)

Country Link
JP (1) JPS6450258A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01285041A (en) * 1988-05-11 1989-11-16 Toshiba Corp Optical memory medium
JPH02177035A (en) * 1988-12-28 1990-07-10 Teijin Ltd Optical recording medium
JPH06280006A (en) * 1993-03-26 1994-10-04 Agency Of Ind Science & Technol Target for producing superconducting thin film, its production, and production of superconducting material using the target
WO1996010251A1 (en) * 1994-09-27 1996-04-04 Minnesota Mining And Manufacturing Company Magneto-optic recording medium having magneto-optic film layers separated by yttrium oxide
WO2007010702A1 (en) * 2005-07-15 2007-01-25 Idemitsu Kosan Co., Ltd. In Sm OXIDE SPUTTERING TARGET
JP2007031786A (en) * 2005-07-27 2007-02-08 Idemitsu Kosan Co Ltd Sputtering target, manufacturing method therefor and transparent electroconductive film

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01285041A (en) * 1988-05-11 1989-11-16 Toshiba Corp Optical memory medium
JPH02177035A (en) * 1988-12-28 1990-07-10 Teijin Ltd Optical recording medium
JPH06280006A (en) * 1993-03-26 1994-10-04 Agency Of Ind Science & Technol Target for producing superconducting thin film, its production, and production of superconducting material using the target
WO1996010251A1 (en) * 1994-09-27 1996-04-04 Minnesota Mining And Manufacturing Company Magneto-optic recording medium having magneto-optic film layers separated by yttrium oxide
US5648163A (en) * 1994-09-27 1997-07-15 Imation Corp. Magneto-optic recording medium having magneto-optic film layers separated by yttrium oxide
EP0783749A1 (en) * 1994-09-27 1997-07-16 Imation Corp. Magneto-optic recording medium having magneto-optic film layers separated by yttrium oxide
WO2007010702A1 (en) * 2005-07-15 2007-01-25 Idemitsu Kosan Co., Ltd. In Sm OXIDE SPUTTERING TARGET
JP2007031786A (en) * 2005-07-27 2007-02-08 Idemitsu Kosan Co Ltd Sputtering target, manufacturing method therefor and transparent electroconductive film

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