JP4755222B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4755222B2 JP4755222B2 JP2008130082A JP2008130082A JP4755222B2 JP 4755222 B2 JP4755222 B2 JP 4755222B2 JP 2008130082 A JP2008130082 A JP 2008130082A JP 2008130082 A JP2008130082 A JP 2008130082A JP 4755222 B2 JP4755222 B2 JP 4755222B2
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Description
する。
(付記1)半導体素子がフエイスダウンで基板上に実装された半導体装置の製造方法であって、
前記基板を前記半導体素子が実装される面とは反対方向に撓ませながら、前記半導体素子の実装位置に接着剤を配設し、前記半導体素子を前記基板上に固着することを特徴とする半導体装置の製造方法。
(付記2)基板をボンディングステージに吸着する工程と、
前記ボンディングステージ上に設けられた凹部内を排気して前記基板を撓ませる工程と、
前記基板上の半導体素子実装位置に接着剤を配設する工程と、
前記基板上に半導体素子をボンディングツールにて押圧する工程と、
前記接着剤を冷却し前記半導体素子を前記基板に固着する工程とを有することを特徴と
する半導体装置の製造方法。
(付記3)基板をボンディングステージに吸着する工程と、
前記ボンデングステージ上に設けられた基板吸着部で吸着しながら前記基板吸着部を下降することにより基板を撓ませる工程と、
前記基板上の半導体素子実装位置に接着剤を配設する工程と、
前記基板上に半導体素子をボンディングツールにて押圧する工程と、
前記接着剤を冷却し前記半導体素子を前記基板に固着する工程とを有することを特徴と
する半導体装置の製造方法。
(付記4)基板を固定するボンディングステージ表面に凹部と、前記凹部内に吸着孔とが形成されていることを特徴とする半導体装置の製造装置。
(付記5)付記4記載の半導体装置の製造装置において、
前記凹部の開口径は前記基板に形成された電極で囲まれた領域より狭いことを特徴とする半導体装置の製造装置。
(付記6)
該接着剤は熱硬化型接着剤であることを特徴とする付記1〜3の何れかに記載された半導体装置の製造方法。
(付記7)
半導体チップの第1主面の対向する周縁部に形成されたチップ側電極を回路基板の第1主面に形成された基板側電極にバンプを介して対向させ、該半導体チップの第2主面をボンディングツールにより押圧しつつ該半導体チップと該回路基板との間に充填された接着用樹脂を硬化収縮させることにより、該半導体チップと該回路基板とをフエイスダウンボンディングする半導体製造装置であって、
該回路基板を載置するボンディングステージと、
該ボンディングステージ上に載置された該回路基板の該基板側電極に囲まれた領域直下に位置する該ボンディングステージ上面に形成された凹部と、
該凹部内を排気する排気孔とを備えたことを特徴とする半導体製造装置。
(付記8)
半導体チップの第1主面の対向する周縁部に形成されたチップ側電極を回路基板の第1主面に形成された基板側電極にバンプを介して対向させ、該半導体チップの第2主面をボンディングツールにより押圧しつつ該半導体チップと該回路基板との間に充填された接着用樹脂を硬化収縮させることにより、該半導体チップと該回路基板とをフエイスダウンボンディングする半導体製造装置であって、
該回路基板を載置するボンディングステージと、
該ボンディングステージの中央部に昇降可動に設けられ、該ボンディングステージ上に載置された該回路基板の該基板側電極に囲まれた領域内を該回路基板の第2主面側から吸着する基板吸着部とを備えたことを特徴とする半導体製造装置。
1a チップ側電極
1b バンプ
2 ボンディングツール
2a、5a 吸着孔
2c、5b 排気孔
3 回路基板(基板)
3a 基板側電極
3b 電極
3c、25 はんだボール
4 接着用樹脂(接着剤)
5 ボンディングステージ
6 凹部
7 フィルム状接着用樹脂
11 防着フィルム
11a 開口
12 ウエーハ
13 ダイシングシート
14 ダイシングライン
15 基板吸着部
16 クラック
22 接着剤
23 ワイヤ
24 封止樹脂
Claims (1)
- 互いに平行な少なくとも2つの周縁部に沿って夫々形成された複数のバンプを有する半導体素子と、前記半導体素子がフエイスダウンで実装され、前記複数のバンプに夫々接続される複数の電極を有する可撓性の基板と、を具備する半導体装置の製造方法であって、
前記バンプが接続される前記電極上の接合部分で挟まれる領域に対応した寸法及び形状の基板吸着部を有するボンディングステージ上に、前記領域と前記基板吸着部とが対応するように、前記基板を配置する工程と、
前記ボンディングステージ上に設けられた前記基板吸着部で前記基板を吸着しながら、前記基板吸着部を下降することにより、前記基板の前記領域を、前記半導体素子が実装される第1の面が凹状となり、且つ、前記第1の面とは反対側の第2の面が凸状となるように弾性変形により撓ませる工程と、
前記領域を含む、前記基板上の半導体素子実装位置に接着剤を配設する工程と、
前記基板上の前記半導体素子実装位置に、前記半導体素子をボンディングツールにて押圧しかつ加熱する工程と、
前記接着剤を冷却し前記半導体素子を前記基板に固着する工程とを有することを特徴とする半導体装置の製造方法。
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WO2009119427A1 (ja) * | 2008-03-26 | 2009-10-01 | 日本電気株式会社 | 半導体装置およびその製造方法 |
KR101084967B1 (ko) | 2009-08-19 | 2011-11-23 | 주식회사 탑 엔지니어링 | 도포 장비의 테잎 지지장치 및 그를 이용한 도포 방법 |
JP5646899B2 (ja) * | 2010-07-26 | 2014-12-24 | 新光電気工業株式会社 | 電子部品実装装置及び電子部品の実装方法 |
KR101819133B1 (ko) | 2011-06-30 | 2018-01-16 | 삼성전자주식회사 | 반도체 모듈의 형성 방법 및 이에 의해 형성된 반도체 모듈 |
TWI576196B (zh) * | 2012-12-05 | 2017-04-01 | Shinkawa Kk | The cooling method of the joining tool cooling device and the joining tool |
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JPS63220532A (ja) * | 1987-03-09 | 1988-09-13 | Seiko Instr & Electronics Ltd | 半導体装置及び製造方法 |
JPH1167842A (ja) * | 1997-08-19 | 1999-03-09 | Matsushita Electric Ind Co Ltd | 電子部品の実装装置および実装方法 |
JP3064998B2 (ja) * | 1997-10-28 | 2000-07-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2002036161A (ja) * | 2000-07-21 | 2002-02-05 | Sony Corp | 半導体装置搭載用吸着ノズル |
JP3490987B2 (ja) * | 2001-07-19 | 2004-01-26 | 沖電気工業株式会社 | 半導体パッケージおよびその製造方法 |
JP2004221319A (ja) * | 2003-01-15 | 2004-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4036116B2 (ja) * | 2003-02-26 | 2008-01-23 | セイコーエプソン株式会社 | 回路基板、半導体装置、半導体製造装置、回路基板の製造方法および半導体装置の製造方法 |
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