JP4725427B2 - パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂 - Google Patents

パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂 Download PDF

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JP4725427B2
JP4725427B2 JP2006157873A JP2006157873A JP4725427B2 JP 4725427 B2 JP4725427 B2 JP 4725427B2 JP 2006157873 A JP2006157873 A JP 2006157873A JP 2006157873 A JP2006157873 A JP 2006157873A JP 4725427 B2 JP4725427 B2 JP 4725427B2
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hydrogen atom
radiation
acid
methylene
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JP2007328060A (ja
JP2007328060A5 (enrdf_load_stackoverflow
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大輔 清水
敏之 甲斐
信司 松村
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JSR Corp
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JSR Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006157873A 2006-06-06 2006-06-06 パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂 Active JP4725427B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006157873A JP4725427B2 (ja) 2006-06-06 2006-06-06 パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006157873A JP4725427B2 (ja) 2006-06-06 2006-06-06 パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂

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Publication Number Publication Date
JP2007328060A JP2007328060A (ja) 2007-12-20
JP2007328060A5 JP2007328060A5 (enrdf_load_stackoverflow) 2009-12-24
JP4725427B2 true JP4725427B2 (ja) 2011-07-13

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5124806B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5124805B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
KR101417168B1 (ko) * 2006-11-10 2014-07-08 제이에스알 가부시끼가이샤 중합성 술폰산 오늄염 및 수지
JP4849268B2 (ja) * 2007-10-18 2012-01-11 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5555914B2 (ja) * 2007-10-29 2014-07-23 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP5131482B2 (ja) * 2008-02-13 2013-01-30 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4998746B2 (ja) 2008-04-24 2012-08-15 信越化学工業株式会社 スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法
JP5104535B2 (ja) * 2008-05-15 2012-12-19 Ｊｓｒ株式会社 上層膜用組成物及びレジストパターン形成方法
JP5201363B2 (ja) * 2008-08-28 2013-06-05 信越化学工業株式会社 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
TWI417274B (zh) * 2008-12-04 2013-12-01 Shinetsu Chemical Co 鹽、酸發生劑及使用其之抗蝕劑材料、空白光罩，及圖案形成方法
TWI485511B (zh) * 2009-03-27 2015-05-21 Jsr Corp 敏輻射線性樹脂組成物及聚合物
WO2010119910A1 (ja) * 2009-04-15 2010-10-21 Jsr株式会社 感放射線性樹脂組成物、それに用いる重合体及びそれに用いる化合物
KR20120012792A (ko) 2009-04-15 2012-02-10 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 이것에 이용하는 중합체 및 이것에 이용하는 화합물
JP5481979B2 (ja) * 2009-07-15 2014-04-23 Ｊｓｒ株式会社 感放射線性樹脂組成物及びそれに用いられる重合体
JP5512431B2 (ja) * 2009-07-17 2014-06-04 住友化学株式会社 重合体、フォトレジスト組成物及びパターンの製造方法
JP5655792B2 (ja) * 2009-12-08 2015-01-21 Jsr株式会社 感放射線性樹脂組成物、重合体、単量体及び感放射線性樹脂組成物の製造方法
JP5851688B2 (ja) * 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性組成物
JP5713004B2 (ja) * 2010-03-17 2015-05-07 Jsr株式会社 感放射線性樹脂組成物
JP2011215428A (ja) * 2010-03-31 2011-10-27 Jsr Corp 感放射線性樹脂組成物およびそれに用いる重合体
KR101184901B1 (ko) * 2010-06-10 2012-09-20 금호석유화학 주식회사 화합물, 이를 포함하는 중합체 및 상기 중합체를 포함하는 화학증폭형 레지스트 조성물
JP5572501B2 (ja) * 2010-09-24 2014-08-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
JP5365651B2 (ja) 2011-02-28 2013-12-11 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP2012056956A (ja) * 2011-11-01 2012-03-22 Shin-Etsu Chemical Co Ltd 新規スルホン酸塩及びその誘導体並びにそれらの製造方法
JP6346129B2 (ja) * 2015-08-05 2018-06-20 信越化学工業株式会社 化合物、高分子化合物、レジスト組成物、及びパターン形成方法
JP6298022B2 (ja) * 2015-08-05 2018-03-20 信越化学工業株式会社 高分子化合物、ポジ型レジスト組成物、積層体、及びレジストパターン形成方法
JP2022191163A (ja) * 2021-06-15 2022-12-27 信越化学工業株式会社 レジスト材料及びパターン形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6326653A (ja) * 1986-07-21 1988-02-04 Tosoh Corp フオトレジスト材
JP3613491B2 (ja) * 1996-06-04 2005-01-26 富士写真フイルム株式会社 感光性組成物
JPH10221852A (ja) * 1997-02-06 1998-08-21 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP2983948B2 (ja) * 1997-02-20 1999-11-29 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP4105377B2 (ja) * 2000-10-03 2008-06-25 富士フイルム株式会社 平版印刷版用原版
JP2005067041A (ja) * 2003-08-25 2005-03-17 Fuji Photo Film Co Ltd 平版印刷方法および機上現像用平版印刷原版
JP4425776B2 (ja) * 2004-12-24 2010-03-03 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法

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