JP4718070B2 - アンダーフィル封止および補修方法 - Google Patents

アンダーフィル封止および補修方法 Download PDF

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Publication number
JP4718070B2
JP4718070B2 JP2001505052A JP2001505052A JP4718070B2 JP 4718070 B2 JP4718070 B2 JP 4718070B2 JP 2001505052 A JP2001505052 A JP 2001505052A JP 2001505052 A JP2001505052 A JP 2001505052A JP 4718070 B2 JP4718070 B2 JP 4718070B2
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Prior art keywords
methylimidazole
circuit board
semiconductor device
thermosetting resin
resin composition
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Expired - Fee Related
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JP2001505052A
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Japanese (ja)
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JP2003502484A (ja
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孝久 道端
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Henkel Corp
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Henkel Corp
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/02Polycondensates containing more than one epoxy group per molecule
    • C08G59/12Polycondensates containing more than one epoxy group per molecule of polycarboxylic acids with epihalohydrins or precursors thereof
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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  • Engineering & Computer Science (AREA)
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  • Polyethers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2001505052A 1999-06-17 2000-06-16 アンダーフィル封止および補修方法 Expired - Fee Related JP4718070B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US13948699P 1999-06-17 1999-06-17
US60/139,486 1999-06-17
US19339200P 2000-03-31 2000-03-31
US19339100P 2000-03-31 2000-03-31
US60/193,391 2000-03-31
US60/193,392 2000-03-31
US21047000P 2000-06-09 2000-06-09
US60/210,470 2000-06-09
PCT/US2000/011878 WO2000079582A1 (en) 1999-06-17 2000-06-16 Controllably degradable composition of heteroatom carbocyclic or epoxy resin and curing agent

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Publication Number Publication Date
JP2003502484A JP2003502484A (ja) 2003-01-21
JP4718070B2 true JP4718070B2 (ja) 2011-07-06

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EP (1) EP1194953A4 (ko)
JP (1) JP4718070B2 (ko)
KR (1) KR100372211B1 (ko)
CN (1) CN1178287C (ko)
AU (1) AU5722700A (ko)
CA (1) CA2374187A1 (ko)
MX (1) MXPA01013054A (ko)
WO (1) WO2000079582A1 (ko)

Families Citing this family (20)

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Publication number Priority date Publication date Assignee Title
JP4609617B2 (ja) * 2000-08-01 2011-01-12 日本電気株式会社 半導体装置の実装方法及び実装構造体
AU2002245103A1 (en) 2000-11-14 2002-07-30 Henkel Loctite Corporation Wafer applied fluxing and underfill material, and layered electronic assemblies manufactured therewith
US6800371B2 (en) 2001-03-07 2004-10-05 3M Innovative Properties Company Adhesives and adhesive compositions containing thioether groups
EP1674495A1 (en) * 2004-12-22 2006-06-28 Huntsman Advanced Materials (Switzerland) GmbH Coating system
KR100671137B1 (ko) 2004-12-30 2007-01-17 제일모직주식회사 재작업이 가능한 반도체 소자 언더필용 액상 에폭시 수지조성물 및 이를 이용한 반도체 소자
JP5721203B2 (ja) * 2005-10-25 2015-05-20 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング アンダーフィル封止剤として有用でありかつリワーク可能な低発熱性の熱硬化性樹脂組成物
KR101148051B1 (ko) * 2005-12-26 2012-05-25 에스케이케미칼주식회사 에폭시 수지 조성물
JP4923946B2 (ja) * 2006-10-24 2012-04-25 ダイソー株式会社 ポリエーテル系多元共重合体およびその架橋物
JP4931079B2 (ja) * 2007-12-21 2012-05-16 パナソニック株式会社 アンダーフィル用液状熱硬化性樹脂組成物とそれを用いた半導体装置
JP5098997B2 (ja) * 2008-12-22 2012-12-12 富士通株式会社 半導体装置とそのリペア方法、及び半導体装置の製造方法
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Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842290A (ja) * 1981-09-07 1983-03-11 日立化成工業株式会社 可撓性印刷回路用基板
JPS62295029A (ja) * 1986-06-16 1987-12-22 Hitachi Ltd 液晶表示素子
JPS63159426A (ja) * 1986-12-23 1988-07-02 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH0218412A (ja) * 1988-07-07 1990-01-22 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH05230335A (ja) * 1991-09-05 1993-09-07 Internatl Business Mach Corp <Ibm> 電子パッケージングにおける除去可能なデバイス保護のための開裂性ジエポキシド
JPH05271389A (ja) * 1992-03-25 1993-10-19 Tairumento:Kk 一液系可撓性エポキシ樹脂組成物並びにそれからなるシーリング材または接着剤
JPH06136092A (ja) * 1992-10-27 1994-05-17 New Japan Chem Co Ltd エポキシ樹脂組成物
JPH06184409A (ja) * 1992-12-18 1994-07-05 Tokuyama Soda Co Ltd 硬化性導電組成物
JPH06256468A (ja) * 1993-03-08 1994-09-13 Toray Chiokoole Kk 透水性舗装用バインダー樹脂
JPH0812741A (ja) * 1994-07-04 1996-01-16 New Japan Chem Co Ltd 液状エポキシ樹脂組成物
JPH09316421A (ja) * 1996-03-27 1997-12-09 Sumitomo Seika Chem Co Ltd 接着剤
JPH10120753A (ja) * 1996-10-17 1998-05-12 Hitachi Chem Co Ltd 封止用成形材料及び電子部品
JPH10152554A (ja) * 1996-11-21 1998-06-09 Nippon Kayaku Co Ltd エネルギー線硬化性組成物及びその硬化物
JPH1117074A (ja) * 1997-06-26 1999-01-22 Jsr Corp 半導体封止用組成物および半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932682A (en) * 1995-12-19 1999-08-03 International Business Machines Corporation Cleavable diepoxide for removable epoxy compositions
US6008266A (en) * 1996-08-14 1999-12-28 International Business Machines Corporation Photosensitive reworkable encapsulant

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842290A (ja) * 1981-09-07 1983-03-11 日立化成工業株式会社 可撓性印刷回路用基板
JPS62295029A (ja) * 1986-06-16 1987-12-22 Hitachi Ltd 液晶表示素子
JPS63159426A (ja) * 1986-12-23 1988-07-02 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH0218412A (ja) * 1988-07-07 1990-01-22 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH05230335A (ja) * 1991-09-05 1993-09-07 Internatl Business Mach Corp <Ibm> 電子パッケージングにおける除去可能なデバイス保護のための開裂性ジエポキシド
JPH05271389A (ja) * 1992-03-25 1993-10-19 Tairumento:Kk 一液系可撓性エポキシ樹脂組成物並びにそれからなるシーリング材または接着剤
JPH06136092A (ja) * 1992-10-27 1994-05-17 New Japan Chem Co Ltd エポキシ樹脂組成物
JPH06184409A (ja) * 1992-12-18 1994-07-05 Tokuyama Soda Co Ltd 硬化性導電組成物
JPH06256468A (ja) * 1993-03-08 1994-09-13 Toray Chiokoole Kk 透水性舗装用バインダー樹脂
JPH0812741A (ja) * 1994-07-04 1996-01-16 New Japan Chem Co Ltd 液状エポキシ樹脂組成物
JPH09316421A (ja) * 1996-03-27 1997-12-09 Sumitomo Seika Chem Co Ltd 接着剤
JPH10120753A (ja) * 1996-10-17 1998-05-12 Hitachi Chem Co Ltd 封止用成形材料及び電子部品
JPH10152554A (ja) * 1996-11-21 1998-06-09 Nippon Kayaku Co Ltd エネルギー線硬化性組成物及びその硬化物
JPH1117074A (ja) * 1997-06-26 1999-01-22 Jsr Corp 半導体封止用組成物および半導体装置

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CN1178287C (zh) 2004-12-01
CN1384975A (zh) 2002-12-11
KR20020027352A (ko) 2002-04-13
EP1194953A1 (en) 2002-04-10
CA2374187A1 (en) 2000-12-28
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JP2003502484A (ja) 2003-01-21
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