EP1194953A4 - Controllably degradable composition of heteroatom carbocyclic or epoxy resin and curing agent - Google Patents
Controllably degradable composition of heteroatom carbocyclic or epoxy resin and curing agentInfo
- Publication number
- EP1194953A4 EP1194953A4 EP00942630A EP00942630A EP1194953A4 EP 1194953 A4 EP1194953 A4 EP 1194953A4 EP 00942630 A EP00942630 A EP 00942630A EP 00942630 A EP00942630 A EP 00942630A EP 1194953 A4 EP1194953 A4 EP 1194953A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- composition
- circuit board
- methylimidazole
- semiconductor device
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 91
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 79
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 58
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 89
- 229920005989 resin Polymers 0.000 claims abstract description 49
- 239000011347 resin Substances 0.000 claims abstract description 49
- -1 amide compound Chemical class 0.000 claims abstract description 41
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 16
- 239000003085 diluting agent Substances 0.000 claims abstract description 13
- 150000008064 anhydrides Chemical class 0.000 claims abstract description 11
- 125000002947 alkylene group Chemical group 0.000 claims abstract description 10
- 238000007789 sealing Methods 0.000 claims abstract description 9
- 229920000768 polyamine Polymers 0.000 claims abstract description 8
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims abstract description 5
- 150000001412 amines Chemical class 0.000 claims abstract description 5
- 125000002837 carbocyclic group Chemical group 0.000 claims abstract description 5
- 239000004593 Epoxy Substances 0.000 claims description 47
- 229920001187 thermosetting polymer Polymers 0.000 claims description 46
- 239000011342 resin composition Substances 0.000 claims description 43
- 239000007795 chemical reaction product Substances 0.000 claims description 30
- 125000003118 aryl group Chemical group 0.000 claims description 29
- 125000003700 epoxy group Chemical group 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 150000002460 imidazoles Chemical class 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 239000011256 inorganic filler Substances 0.000 claims description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 9
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 125000004122 cyclic group Chemical group 0.000 claims description 9
- 239000000047 product Substances 0.000 claims description 9
- 239000011593 sulfur Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 7
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 claims description 5
- 239000000565 sealant Substances 0.000 claims description 5
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical compound CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 claims description 4
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 claims description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 4
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 230000000593 degrading effect Effects 0.000 claims description 4
- 238000006467 substitution reaction Methods 0.000 claims description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 150000003568 thioethers Chemical group 0.000 claims description 3
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 claims description 2
- NOQONXWBCSGVGF-UHFFFAOYSA-N 1,2,4-triphenylimidazole Chemical class C=1C=CC=CC=1N1C=C(C=2C=CC=CC=2)N=C1C1=CC=CC=C1 NOQONXWBCSGVGF-UHFFFAOYSA-N 0.000 claims description 2
- KKKDZZRICRFGSD-UHFFFAOYSA-N 1-benzylimidazole Chemical class C1=CN=CN1CC1=CC=CC=C1 KKKDZZRICRFGSD-UHFFFAOYSA-N 0.000 claims description 2
- SEULWJSKCVACTH-UHFFFAOYSA-N 1-phenylimidazole Chemical class C1=NC=CN1C1=CC=CC=C1 SEULWJSKCVACTH-UHFFFAOYSA-N 0.000 claims description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 2
- XIOGJAPOAUEYJO-UHFFFAOYSA-N 2-(2-methoxyphenyl)-4,5-diphenyl-1h-imidazole Chemical class COC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 XIOGJAPOAUEYJO-UHFFFAOYSA-N 0.000 claims description 2
- OPHSKKPSEMOQLM-UHFFFAOYSA-N 2-(2-phenylethenyl)-1h-imidazole Chemical class N=1C=CNC=1C=CC1=CC=CC=C1 OPHSKKPSEMOQLM-UHFFFAOYSA-N 0.000 claims description 2
- YAXVEVGFPVWPKA-UHFFFAOYSA-N 2-[2-(4-methoxyphenyl)ethenyl]-1h-imidazole Chemical compound C1=CC(OC)=CC=C1C=CC1=NC=CN1 YAXVEVGFPVWPKA-UHFFFAOYSA-N 0.000 claims description 2
- SLLDUURXGMDOCY-UHFFFAOYSA-N 2-butyl-1h-imidazole Chemical compound CCCCC1=NC=CN1 SLLDUURXGMDOCY-UHFFFAOYSA-N 0.000 claims description 2
- XUZOLVDRTWTQJB-UHFFFAOYSA-N 2-heptadec-1-enyl-5-methyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCC=CC1=NC(C)=CN1 XUZOLVDRTWTQJB-UHFFFAOYSA-N 0.000 claims description 2
- RFWOZDRUDBNGSY-UHFFFAOYSA-N 2-heptadecyl-5-methyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC(C)=CN1 RFWOZDRUDBNGSY-UHFFFAOYSA-N 0.000 claims description 2
- OMBXZTBWATXTMQ-UHFFFAOYSA-N 2-methyl-1-(1-phenyltridecyl)imidazole Chemical class C1=CN=C(C)N1C(CCCCCCCCCCCC)C1=CC=CC=C1 OMBXZTBWATXTMQ-UHFFFAOYSA-N 0.000 claims description 2
- UPOLYUOBDJSLRC-UHFFFAOYSA-N 2-undec-1-enyl-1h-imidazole Chemical compound CCCCCCCCCC=CC1=NC=CN1 UPOLYUOBDJSLRC-UHFFFAOYSA-N 0.000 claims description 2
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 claims description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 claims description 2
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 claims description 2
- UPJQFPBIFZYRLB-UHFFFAOYSA-N 3-(4,5-diphenyl-1h-imidazol-2-yl)phenol Chemical class OC1=CC=CC(C=2NC(=C(N=2)C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 UPJQFPBIFZYRLB-UHFFFAOYSA-N 0.000 claims description 2
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 claims description 2
- YGOFNNAZFZYNIX-UHFFFAOYSA-N 3-N-phenylbenzene-1,2,3-triamine Chemical compound NC=1C(=C(C=CC1)NC1=CC=CC=C1)N YGOFNNAZFZYNIX-UHFFFAOYSA-N 0.000 claims description 2
- LTGRDWFVGBZDIR-UHFFFAOYSA-N 4-(4,5-diphenyl-1h-imidazol-2-yl)-n,n-dimethylaniline Chemical class C1=CC(N(C)C)=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 LTGRDWFVGBZDIR-UHFFFAOYSA-N 0.000 claims description 2
- MJZYCDYAVCQQEQ-UHFFFAOYSA-N 5-tert-butyl-2-(4,5-diphenyl-1H-imidazol-2-yl)phenol Chemical class OC1=CC(C(C)(C)C)=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 MJZYCDYAVCQQEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 125000002723 alicyclic group Chemical group 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- FWOHNFOTPCHCMT-UHFFFAOYSA-N carbonic acid;oxetane Chemical compound C1COC1.C1COC1.OC(O)=O FWOHNFOTPCHCMT-UHFFFAOYSA-N 0.000 claims description 2
- IKZDMJSZEMDIMC-UHFFFAOYSA-N chembl389656 Chemical class OC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 IKZDMJSZEMDIMC-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- XBTRYWRVOBZSGM-UHFFFAOYSA-N (4-methylphenyl)methanediamine Chemical compound CC1=CC=C(C(N)N)C=C1 XBTRYWRVOBZSGM-UHFFFAOYSA-N 0.000 claims 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 claims 1
- WBDSXISQIHMTGL-UHFFFAOYSA-N 2-methyl-4,5-diphenyl-1h-imidazole Chemical class N1C(C)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 WBDSXISQIHMTGL-UHFFFAOYSA-N 0.000 claims 1
- GSKPCWYORDSBPC-UHFFFAOYSA-N 2-naphthalen-2-yl-4,5-diphenyl-1h-imidazole Chemical compound C1=CC=CC=C1C1=C(C=2C=CC=CC=2)NC(C=2C=C3C=CC=CC3=CC=2)=N1 GSKPCWYORDSBPC-UHFFFAOYSA-N 0.000 claims 1
- 150000001602 bicycloalkyls Chemical group 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 125000001033 ether group Chemical group 0.000 claims 1
- QQWAKSKPSOFJFF-UHFFFAOYSA-N oxiran-2-ylmethyl 2,2-dimethyloctanoate Chemical group CCCCCCC(C)(C)C(=O)OCC1CO1 QQWAKSKPSOFJFF-UHFFFAOYSA-N 0.000 claims 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 abstract description 2
- 125000005587 carbonate group Chemical group 0.000 abstract 1
- 150000002148 esters Chemical class 0.000 abstract 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical group S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 24
- 229910000679 solder Inorganic materials 0.000 description 18
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 16
- 238000001723 curing Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- 239000004643 cyanate ester Substances 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 150000001913 cyanates Chemical class 0.000 description 10
- 238000006731 degradation reaction Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 229920003319 Araldite® Polymers 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000035939 shock Effects 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 230000008439 repair process Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 125000002091 cationic group Chemical group 0.000 description 4
- 239000006071 cream Substances 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical class CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000005382 thermal cycling Methods 0.000 description 3
- 238000002411 thermogravimetry Methods 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 239000004416 thermosoftening plastic Substances 0.000 description 3
- 230000004580 weight loss Effects 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 125000002015 acyclic group Chemical group 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 235000013849 propane Nutrition 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- UFKLQICEQCIWNE-UHFFFAOYSA-N (3,5-dicyanatophenyl) cyanate Chemical compound N#COC1=CC(OC#N)=CC(OC#N)=C1 UFKLQICEQCIWNE-UHFFFAOYSA-N 0.000 description 1
- YDCUTCGACVVRIQ-UHFFFAOYSA-N (3,6-dicyanatonaphthalen-1-yl) cyanate Chemical compound N#COC1=CC(OC#N)=CC2=CC(OC#N)=CC=C21 YDCUTCGACVVRIQ-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- QQZZMAPJAKOSNG-UHFFFAOYSA-N (3-cyanatophenyl) cyanate Chemical compound N#COC1=CC=CC(OC#N)=C1 QQZZMAPJAKOSNG-UHFFFAOYSA-N 0.000 description 1
- GUGZCSAPOLLKNG-UHFFFAOYSA-N (4-cyanatophenyl) cyanate Chemical compound N#COC1=CC=C(OC#N)C=C1 GUGZCSAPOLLKNG-UHFFFAOYSA-N 0.000 description 1
- DEABFUINOSGCMK-UHFFFAOYSA-N (4-ethylphenyl) cyanate Chemical compound CCC1=CC=C(OC#N)C=C1 DEABFUINOSGCMK-UHFFFAOYSA-N 0.000 description 1
- OFIWROJVVHYHLQ-UHFFFAOYSA-N (7-cyanatonaphthalen-2-yl) cyanate Chemical compound C1=CC(OC#N)=CC2=CC(OC#N)=CC=C21 OFIWROJVVHYHLQ-UHFFFAOYSA-N 0.000 description 1
- YQMXOIAIYXXXEE-UHFFFAOYSA-N 1-benzylpyrrolidin-3-ol Chemical compound C1C(O)CCN1CC1=CC=CC=C1 YQMXOIAIYXXXEE-UHFFFAOYSA-N 0.000 description 1
- VXHYVVAUHMGCEX-UHFFFAOYSA-N 2-(2-hydroxyphenoxy)phenol Chemical compound OC1=CC=CC=C1OC1=CC=CC=C1O VXHYVVAUHMGCEX-UHFFFAOYSA-N 0.000 description 1
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 description 1
- WHNBDXQTMPYBAT-UHFFFAOYSA-N 2-butyloxirane Chemical group CCCCC1CO1 WHNBDXQTMPYBAT-UHFFFAOYSA-N 0.000 description 1
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 description 1
- SYURNNNQIFDVCA-UHFFFAOYSA-N 2-propyloxirane Chemical group CCCC1CO1 SYURNNNQIFDVCA-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- 229940086681 4-aminobenzoate Drugs 0.000 description 1
- 235000013175 Crataegus laevigata Nutrition 0.000 description 1
- DKMROQRQHGEIOW-UHFFFAOYSA-N Diethyl succinate Chemical compound CCOC(=O)CCC(=O)OCC DKMROQRQHGEIOW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- JJBDNGSGEWKRSF-UHFFFAOYSA-N O(C#N)C1=C(C=CC=C1)CC(CC)=C1C(C=CC=C1)=C(CC1=C(C=CC=C1)OC#N)CC Chemical compound O(C#N)C1=C(C=CC=C1)CC(CC)=C1C(C=CC=C1)=C(CC1=C(C=CC=C1)OC#N)CC JJBDNGSGEWKRSF-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- YKONYNBAMHVIMF-UHFFFAOYSA-N [2,6-dichloro-4-[2-(3,5-dichloro-4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C(Cl)=C(OC#N)C(Cl)=CC=1C(C)(C)C1=CC(Cl)=C(OC#N)C(Cl)=C1 YKONYNBAMHVIMF-UHFFFAOYSA-N 0.000 description 1
- KPSLOKZNJBTGRP-UHFFFAOYSA-N [2-(2-cyanatophenoxy)phenyl] cyanate Chemical class N#COC1=CC=CC=C1OC1=CC=CC=C1OC#N KPSLOKZNJBTGRP-UHFFFAOYSA-N 0.000 description 1
- YVXTXJOQTQPNPV-UHFFFAOYSA-N [2-(2-cyanatophenyl)sulfanylphenyl] cyanate Chemical class N#COC1=CC=CC=C1SC1=CC=CC=C1OC#N YVXTXJOQTQPNPV-UHFFFAOYSA-N 0.000 description 1
- NTQOTSRMQVHZDE-UHFFFAOYSA-N [2-[(2-cyanatophenyl)methyl]phenyl] cyanate Chemical class N#COC1=CC=CC=C1CC1=CC=CC=C1OC#N NTQOTSRMQVHZDE-UHFFFAOYSA-N 0.000 description 1
- LYZFLNSQKAIUHI-UHFFFAOYSA-N [2-[2-(2-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical class C=1C=CC=C(OC#N)C=1C(C)(C)C1=CC=CC=C1OC#N LYZFLNSQKAIUHI-UHFFFAOYSA-N 0.000 description 1
- OYQHOGAPGFEZAK-UHFFFAOYSA-N [2-bis(2-cyanatophenoxy)phosphanyloxyphenyl] cyanate Chemical class N#COC1=CC=CC=C1OP(OC=1C(=CC=CC=1)OC#N)OC1=CC=CC=C1OC#N OYQHOGAPGFEZAK-UHFFFAOYSA-N 0.000 description 1
- LICDITOZQJQJCC-UHFFFAOYSA-N [2-bis(2-cyanatophenoxy)phosphoryloxyphenyl] cyanate Chemical class C=1C=CC=C(OC#N)C=1OP(OC=1C(=CC=CC=1)OC#N)(=O)OC1=CC=CC=C1OC#N LICDITOZQJQJCC-UHFFFAOYSA-N 0.000 description 1
- WXVMBZDFEQHMFC-UHFFFAOYSA-N [2-chloro-4-[(3-chloro-4-cyanatophenyl)methyl]phenyl] cyanate Chemical compound C1=C(OC#N)C(Cl)=CC(CC=2C=C(Cl)C(OC#N)=CC=2)=C1 WXVMBZDFEQHMFC-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- SNYVZKMCGVGTKN-UHFFFAOYSA-N [4-(4-cyanatophenoxy)phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1OC1=CC=C(OC#N)C=C1 SNYVZKMCGVGTKN-UHFFFAOYSA-N 0.000 description 1
- HEJGXMCFSSDPOA-UHFFFAOYSA-N [4-(4-cyanatophenyl)phenyl] cyanate Chemical group C1=CC(OC#N)=CC=C1C1=CC=C(OC#N)C=C1 HEJGXMCFSSDPOA-UHFFFAOYSA-N 0.000 description 1
- CNUHQZDDTLOZRY-UHFFFAOYSA-N [4-(4-cyanatophenyl)sulfanylphenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1SC1=CC=C(OC#N)C=C1 CNUHQZDDTLOZRY-UHFFFAOYSA-N 0.000 description 1
- AUYQDAWLRQFANO-UHFFFAOYSA-N [4-[(4-cyanatophenyl)methyl]phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1CC1=CC=C(OC#N)C=C1 AUYQDAWLRQFANO-UHFFFAOYSA-N 0.000 description 1
- AHZMUXQJTGRNHT-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)(C)C1=CC=C(OC#N)C=C1 AHZMUXQJTGRNHT-UHFFFAOYSA-N 0.000 description 1
- PPZSVSGWDQKBIW-UHFFFAOYSA-N [4-bis(4-cyanatophenoxy)phosphanyloxyphenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1OP(OC=1C=CC(OC#N)=CC=1)OC1=CC=C(OC#N)C=C1 PPZSVSGWDQKBIW-UHFFFAOYSA-N 0.000 description 1
- HYAOCWBXRFEHDV-UHFFFAOYSA-N [4-bis(4-cyanatophenoxy)phosphoryloxyphenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1OP(OC=1C=CC(OC#N)=CC=1)(=O)OC1=CC=C(OC#N)C=C1 HYAOCWBXRFEHDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001348 alkyl chlorides Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical class OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical class O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 150000002240 furans Chemical class 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- MUTGBJKUEZFXGO-UHFFFAOYSA-N hexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21 MUTGBJKUEZFXGO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- SOOZEQGBHHIHEF-UHFFFAOYSA-N methyltetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21C SOOZEQGBHHIHEF-UHFFFAOYSA-N 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005547 polycyclic aromatic hydrocarbon Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- SEAZOECJMOZWTD-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethyl)silane Chemical compound CO[Si](OC)(OC)CC1CO1 SEAZOECJMOZWTD-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/02—Polycondensates containing more than one epoxy group per molecule
- C08G59/12—Polycondensates containing more than one epoxy group per molecule of polycarboxylic acids with epihalohydrins or precursors thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
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Definitions
- thermosetting resin compositions useful for mounting onto a circuit board semiconductor devices, such as chip size or chip scale packages (“CSPs”), ball grid arrays (“BGAs”), land grid arrays (“LGAs”) and the like, each of which having a semiconductor chip, such as large scale integration (“LSI”), on a carrier substrate.
- CSPs chip size or chip scale packages
- BGAs ball grid arrays
- LGAs land grid arrays
- the compositions are useful for mounting onto circuit board semiconductor chips themselves. Reaction products of the compositions of this invention are controllably reworkable when subjected to appropriate conditions .
- CSPs, BGAs and LGAs are being used to reduce the size of packages substantially to that of bare chips.
- Such CSPs, BGAs and LGAs improve the characteristics of the electronic device while retaining many of their operating features, thus serving to protect semiconductor bare chips, such as LSIs, and facilitate testing thereof.
- the CSP/BGA/LGA assembly is connected to electrical conductors on a circuit board by use of a solder connection or the like.
- a solder connection or the like.
- the reliability of the solder connection between the circuit board and the CSP/BGA/LGA often becomes suspect.
- CSP/BGA/LGA assembly is mounted on a circuit board, the space between the CSP/BGA/LGA assembly and the circuit board is often now filled with a sealing resin (commonly referred to as underfill sealing) in order to relieve stresses caused by thermal cycling, thereby improving heat shock properties and enhancing the reliability of the structure.
- a sealing resin commonly referred to as underfill sealing
- thermosetting resins that form cross linked networks when cured are typically used as the underfill sealing material, in the event of a failure after the CSP/BGA/LGA assembly is mounted on the circuit board, it is difficult to replace the CSP/BGA/LGA assembly without destroying or scrapping the CSP/BGA/LGA assembly-circuit board structure in its entirety.
- 69280/94 discloses a process where a semiconductor chip is fixed and connected to a substrate by use of a resin capable of hardening at a predetermined temperature. In the event of failure, the semiconductor chip is removed from the substrate by softening the resin at a temperature higher than the predetermined temperature. No specific resin is disclosed, and there is no discussion regarding treating the resin that remains on the substrate. Thus, the disclosed process is at best incomplete.
- U.S. Patent No. 5,423,931 it is conventional to use a solvent to remove residual resin from a circuit board.
- swelling the resin with a solvent is a time-consuming process and the corrosive organic acid ordinarily used as the solvent may reduce the reliability of the circuit board.
- the '931 patent speaks to a method for removing residual resin by irradiation with electromagnetic radiation.
- Japanese Laid-Open Patent Publication No. 251516/93 also discloses a mounting process using a bisphenol A type epoxy resin (CV5183 or CV5183S; manufactured by Matsushita
- Thermoplastic underfill resins are known for use in semiconductor chip attachment. See U.S. Patent No. 5,783,867 (Belke, Jr . ) .
- thermoplastic resins tend to leak under relatively modest temperature conditions.
- ther osetting resins cure into a matrix, which ordinarily have greater thermal stability under end use operating temperatures .
- U.S. Patent Nos. 5,512,613 (Afzali-Ardakani) , 5,560,934 (Afzali-Ardakani ) , and 5,932,682 (Buchwalter) each refer to a reworkable thermoset composition based on a diepoxide component in which the organic linking moiety connecting the two epoxy groups of the diepoxide includes an acid cleavable acyclic acetyl group.
- acid cleavable acyclic acetyl groups forming the bases of the reworkable composition, a cured thermoset need only be introduced to an acidic environment in order to achieve softening and a loss of much of its adhesiveness.
- U.S. Patent No. 5,872,158 (Kuczynski) refers to thermosetting compositions capable of curing upon exposure to actinic radiation, which are based on acetyl diacrylates, and reaction products of which are reported to be soluble in dilute acid.
- U.S. Patent No. 5,760,337 refers to thermally reworkable crosslinked resins to fill the gap created between a semiconductor device and a substrate to which it is attached. These resins are produced by reacting a dienophile (with a functionality greater than 1) with a 2.5-dialkyl substituted furan-containing polymer.
- thermosetting resin composition capable of sealing underfilling between a semiconductor device including a semiconductor chip mounted on a carrier substrate and a circuit board to which said semiconductor device is electrically connected.
- the composition includes about 100 parts by weight of an epoxy resin, about 3 to about 60 parts by weight of a curing agent, and about 1 to about 90 parts by weight of a plasticizer.
- the area around the cured thermoset is heated at a temperature of about 190 to about 260°C for a period of time ranging from about 10 seconds to about 1 minute in order to achieve softening and a loss of much of its adhesiveness.
- the present invention provides a thermosetting resin composition useful as an underfill sealant resin.
- the composition enables a semiconductor device, such as a CSP/BGA/LGA assembly which includes a semiconductor chip mounted on a carrier substrate, to be securely connected to a circuit board by short-time heat curing and with good productivity, which demonstrates excellent heat shock properties (or thermal cycle properties), and permits the CSP/BGA/LGA assembly to be easily removed from the circuit board in the event of semiconductor device or connection failure.
- a semiconductor chip may be securely connected to, and if necessary removed from, a circuit board using the inventive compositions .
- the thermosetting resin composition includes a curable resin component and a curing agent.
- the curable resin component may be chosen from those having at least two heteroatom-containing carbocyclic structures pending from a core structure, with the core structure containing at least one linkage selected from ether, thioether, carbonate and combinations thereof, which linkage is capable of being reworked under appropriate conditions so as to lose its adhesiveness.
- One such rework technique involves degrading the cured reaction product of the composition upon exposure to elevated temperature conditions and/or acidic conditions.
- the curable resin may be an epoxy resin, at least a portion of which having at least one alkylene oxide residue positioned adjacent at least one terminal epoxy group. Where the curable resin is not an epoxy resin, the inventive composition may include as a separate component an epoxy resin component .
- compositions may also include a monofunctional epoxy coreactant diluent represented by the following structure : ⁇ r " CH, Y O c -R
- the inventive compositions may also include a separate anhydride component .
- thermosetting resin composition of the present invention is curable at a relatively low temperature in a short period of time, cured reaction products thereof have excellent heat shock properties and, moreover, can be easily split by the application of force under heated conditions. That is, semiconductor devices or semiconductor chips attached to circuit boards by cured reaction products of the thermosetting resin compositions of this invention can be easily removed by heating the reaction product, allowing it to swell with a solvent, or allowing it to swell with a solvent under heated conditions .
- thermosetting resin compositions of this invention semiconductor devices, such as CSP/BGA/LGA assemblies, or semiconductor chips can be securely connected to a circuit board by short-time heat curing and with good productivity, with the resulting mounting structure demonstrating excellent heat shock properties (or thermal cycle properties) . Moreover, in the event of failure, the semiconductor device or semiconductor chip can be easily removed. This makes it possible to reuse the circuit board, thereby achieve an improvement in the yield of the production process and reducing production cost.
- FIG. 1 depicts a cross-sectional view showing an example of a semiconductor device in which the thermosetting resin composition of the present invention is used.
- FIG. 2 depicts a cross-sectional view of a semiconductor device which has been removed from the circuit board for repairing purposes.
- FIG. 3 depicts a cross-sectional view showing an example of a semiconductor flip chip assembly in which the thermosetting resin composition of the present invention is used.
- FIG. 4 depicts a flow diagram of a procedure useful to rework a cured thermosetting resin composition in accordance with the present invention, so as to remove a semiconductor device from a circuit board to which it had been attached.
- FIG. 5 depicts a temperature vs. weight loss trace of a thermal gravimetric analysis demonstrating the temperatures at which a composition in accordance with this invention ( ⁇ ) loses weight by virtue of thermal degradation contrasted to the temperatures at which a composition based on bisphenol-F-type epoxy resin (•) loses weight by virtue of thermal degradation.
- FIG. 6 depicts a temperature vs. weight loss trace of a thermal gravimetric analysis demonstrating the temperatures at which a composition in accordance with this invention (I) loses weight by virtue of thermal degradation contrasted to the temperatures at which a composition based on bisphenol-F-type epoxy resin (D) loses weight by virtue of thermal degradation.
- FIG. 7 depicts a temperature vs. weight loss trace of a thermal gravimetric analysis demonstrating the temperatures at which a composition in accordance with this invention ( ⁇ ) loses weight by virtue of thermal degradation contrasted to the temperatures at which a composition based on bisphenol-F-type epoxy resin (O) loses weight by virtue of thermal degradation.
- FIG. 8 depicts a 13 C NMR spectra of "ANCAMINE" 2337S.
- FIG. 9 depicts a FT-IR spectra of "ANCAMINE” 2337S.
- thermosetting resin composition broadly includes a curable resin component and a curing agent.
- the curable resin component may be chosen from those having at least two heteroatom-containing carbocyclic structures pending from a core structure, with the core structure containing at least one linkage selected from ether, thioether, carbonate and combinations thereof, which linkage is capable of being reworked under appropriate conditions so as to lose its adhesiveness.
- One such rework technique involves degrading the cured reaction product of the inventive composition upon exposure to elevated temperature conditions and/or acidic conditions.
- the curable resin may be an epoxy resin, at least a portion of which having at least one alkylene oxide residue positioned adjacent at least one terminal epoxy group. Where the curable resin is not itself an epoxy resin, the inventive composition may include as a separate component an epoxy resin component.
- the curable resin may be represented by the following structure:
- the box may represent one or more structural linkages including aromatic rings (s) or ring system(s), with or without interruption or substitution by one or more heteroatoms, examples of which are given below.
- X 1 , X 2 and X a and X b may be the same or different and represent the heteroatoms, oxygen and sulfur.
- the letter designations, m and m 1 represent integers within the range of 1 to 3
- n and n 1 represent integers within the range of 0 to 8
- o and o 1 represent integers within the range of 1 to 3.
- the box of the core structure of aromatic rings within the curable resin of structure I_ may be individual aromatic rings, or aromatic ring systems having multiple aromatic units joined in fused ring systems, joined in bi-aryl (such as, biphenyl) or bis-aryl (such as bisphenol A or bisphenol F, or bisphenol compounds joined by a heteroatom) systems, joined in cycloaliphatic-aromatic hybrid ring systems, or joined in oligomeric (such as, novolac-type) systems, examples of which include, among others, naphthalene, anthracene, phenanthracene and fluorene.
- the box may represent the structural linkage
- Y may or may not be present and when present is carbon, or the heteroatom, oxygen or sulfur.
- the box may represent a phenylene group. Either of these representations may bear substitution at one or more locations on the aromatic ring(s) with functional groups ordinarily present on aromatic rings (s), such as alkyl, alkenyl, halo, nitro, carboxyl, amino, hydroxyl, thio, and the like.
- curable resins within structure I include MPG, [bis [4 (2 , 3-epoxy- propylthio)phenyl]-sulfide (CAS Reg. No. 84697-35-8), available commercially from Sumitomo Seika Chemicals Co.,
- the curable resin is represented by the following structure:
- X 1 and X 2 are as above; X a and X b may be the same or different, may or may not be present, and when present represent alkyl, alkenyl, aryl and the like; and the letter designations, m and m 1 are as above.
- the heteroatom-containing carbocyclic structures pending from the core structure may be three, four or five membered rings with the heteroatom being an oxygen and/or sulfur atom. These ring structures cross-link with one another under appropriate conditions to form reaction products of the compositions of the present invention.
- the carbonate linkage is degradable upon exposure to elevated temperature conditions, with or without the presence of acid. This linkage is capable of degrading to liberate carbon dioxide gas .
- the temperature used to effect such degradation of compositions within the scope of the present invention may be as great as 50°C lower than the temperatures required to degrade ordinary epoxy-based compositions used for this purpose, such as those based on bisphenol-A-type epoxy resins or bisphenol-F-type epoxy resins, which are ordinarily in the vicinity of about 300°C or more. (See Examples section.)
- a particularly desirable curable resin within structure I_I includes CBO, carbonate bisoxetane (CAS Reg. No. 60763-95-3), available commercially from UBE Industries, Ltd., Tokyo, Japan.
- the curable resin is an epoxy resin, where at least a portion of such epoxy resin includes an epoxy resin having at least one alkylene oxide residue position adjacent at least one terminal epoxy group.
- the epoxy resin may be based on mono- or multifunctional aliphatic epoxies, epoxies with a cycloaliphatic ring structure or system, or epoxies with an aromatic ring structure or system, and combinations thereof
- the epoxy resin may include any common epoxy resin, such as a multifunctional epoxy resin.
- the multifunctional epoxy resin should be included in an amount within the range of about 15% by weight to about 75% by weight of the total of the epoxy resin component.
- the amount thereof should be in the range of from about 35% by weight to about 65% by weight, such as about 40% by weight to about 50% by weight of the total of the epoxy resin component.
- multifunctional epoxy resin examples include bisphenol-A-type epoxy resin, bisphenol-F-type epoxy resin (such as RE-404-S from Nippon Kayaku, Japan), phenol novolac- type epoxy resin, and cresol novolac-type epoxy from resin (such as "ARALDITE” ECN 1871 from Ciba Specialty Chemicals, Hawthorne, New York) .
- epoxy resins include polyepoxy compounds based on aromatic amines and epichlorohydrin, such as N, N, N ' , N ' -tetraglycidyl-4 , 4 ' -diaminodiphenyl methane; N- diglycidyl-4-aminophenyl glycidyl ether; and N,N,N',N'- tetraglycidyl-1 , 3-propylene bis-4-aminobenzoate .
- polyepoxy compounds based on aromatic amines and epichlorohydrin such as N, N, N ' , N ' -tetraglycidyl-4 , 4 ' -diaminodiphenyl methane; N- diglycidyl-4-aminophenyl glycidyl ether; and N,N,N',N'- tetraglycidyl-1 , 3-propylene bis-4-aminobenzoate
- epoxy resins suitable for use herein also include polyglycidyl derivatives of phenolic compounds, such as those available commercially under the tradename "EPON”, such as “EPON” 828, “EPON” 1001, “EPON” 1009, and “EPON” 1031 from Shell Chemical Co.; "DER” 331, “DER” 332, “DER” 334, and “DER” 542 from Dow Chemical Co.; and BREN-S from Nippon Kayaku.
- Other suitable epoxy resins include polyepoxides prepared from polyols and the like and polyglycidyl derivatives of phenol-formaldehyde novolacs, the latter of such as "DEN” 431, "DEN” 438, and "DEN” 439 from Dow Chemical.
- Cresol analogs are also available commercially under the tradename "ARALDITE”, such as “ARALDITE” ECN 1235, “ARALDITE” ECN 1273, and “ARALDITE” ECN 1299 from Ciba Specialty Chemicals Corporation.
- SU-8 is a bisphenol-A-type epoxy novolac available from Interez, Inc.
- Polyglycidyl adducts of amines, aminoalcohols and polycarboxylic acids are also useful in this invention, commercially available resins of which include GLYAMINE” 135, “GLYAMINE” 125, and “GLYAMINE” 115 from F.I.C. Corporation; "ARALDITE” MY-720, “ARALDITE” 0500, and "ARALDITE” 0510 from Ciba Specialty Chemicals and PGA-X and PGA-C from the Sherwin-Williams Co.
- epoxy resin component having at least one alkylene oxide residue positioned adjacent at least one terminal epoxy group is particularly desirable for the portion of the epoxy resin component having at least one alkylene oxide residue positioned adjacent at least one terminal epoxy group to be present in an amount of at least about 5% by weight of the total of epoxy resin component.
- aliphatic epoxies with alkylene oxide residues include, but are not limited to, mono-, di- or multifunctional epoxies containing ether linkages, such as primary, secondary and tertary alkylene diol diglycidyl ethers, and epoxies containing mono- or poly-alkylene oxide residues (such as ethylene oxide, propylene oxide, butylene oxide, pentylene oxide, and hexylene oxide residues) .
- mono-, di- or multifunctional epoxies containing ether linkages such as primary, secondary and tertary alkylene diol diglycidyl ethers
- epoxies containing mono- or poly-alkylene oxide residues such as ethylene oxide, propylene oxide, butylene oxide, pentylene oxide, and hexylene oxide residues
- n is an integer from 1 to about 18, are each appropriate, individually or in combination, for use as at least a portion of the epoxy resin component.
- Examples of cycloaliphatic epoxies with alkylene oxide residues include mono-, di- or multi functional cyclohexyl epoxies; hydrated bisphenol A-type epoxies; and hydrated bisphenol F-type epoxies, containing alkylene ether residues.
- DME-100 1, 4-cyclohexane dimethanol diglycidyl ether, available commercially from New Japan Chemical Co., Ltd.
- aromatic epoxies with alkylene oxide residues include mono-, di- or multi- functional epoxies such as bisphenol A type epoxies; bisphenol F type epoxies; phenol novolac type epoxies; and cresol novolac type epoxies, containing alkylene ether residues.
- epoxies examples include BEO-60E (ethoxylated bisphenol A di-glycidyl ether, available commercially from New Japan Chemical Co., Ltd.), and BPO-20E (propyloxylated bisphenol A di-glycidyl ether, available commercially from New Japan Chemical Co., Ltd.), which are shown below: 16
- n is an integer between and about 1 and 20, which for BPO-60E n is 1, and
- n is an integer between and about 1 and 20, which for
- the curable resin component should be present in the composition in an amount which the range of about 10% by weight to about 95% by weight, desirably about 20% by weight to about 80% by weight, such as about 60% by weight
- the epoxy resin is used in combination with a monofunctional epoxy coreactant diluent.
- Appropriate monofunctional epoxy coreactant diluents for use herein include those that have a viscosity which is lower than that of the epoxy resin component, ordinarily, less than about 250 cps .
- the monofunctional epoxy coreactant diluents should have an epoxy group with an alkyl group of about 6 to about 28 carbon atoms, examples of which include C 6 - 28 alkyl glycidyl ethers, C 6 -- 28 fatty acid glycidyl esters and C 6 -. 28 alkylphenol glycidyl ethers.
- a particularly desirable coreactant diluent is represented by:
- X represents the heteroatoms, oxygen or sulfur
- Y may or may not be present, and when present represents an alkyl (linear, branched, cyclo or bicyclo) , or alkenyl (linear, branched, cyclo or bicyclo) and the like linkage of from one to about twenty carbon atoms, linkage and an aryl (one or more aromatic ring(s) or ring system(s) ) linkage of from about six to about twenty carbon atoms.
- monofunctional epoxy coreactant diluents include those from Pacific Epoxy Polymers, Richmond, Michigan, under the trade designations PEP-6770 (glycidyl ester of neodecandoic acid) , PEP-6740 (phenyl glycidyl ether) and PEP-6741 (butyl glycidyl ether) .
- PEP-6770 glycidyl ester of neodecandoic acid
- PEP-6740 phenyl glycidyl ether
- PEP-6741 butyl glycidyl ether
- amine compounds include aliphatic polyamines, such as diethylenetriamine, triethylenetetramine and diethylaminopropylamine; aromatic polyamines, such as m- xylenediamine and diaminodiphenylamine; and alicyclic polyamines, such as isophoronediamine and menthenediamine .
- amide compounds examples include cyano- functionalized amides, such as dicyandiamide .
- imidazole compounds include imidazole, isoimidazole, and substituted imidazoles -- such as alkyl-substituted imidazoles (e.g., 2-methyl imidazole, 2- ethyl-4-methylimidazole, 2, 4-dimethylimidazole, butylimidazole, 2-heptadecenyl-4-methylimidazole, 2- methylimidazole, 2-undecenylimidazole, l-vinyl-2- methylimidazole, 2-n-heptadecylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl 4-methylimidazole, l-benzyl-2- methylimidazole, l-propyl-2-methylimidazole, l-cyanoethyl-2- methylimidazole, l-cyanoethyl-2-ethyl-4
- Examples of commercial imidazole compounds are available from Air Products, Allentown, Pennsylvania under the trade designation “CUREZOL” 1B2MZ and from Synthron, Inc., Morganton, North Carolina under the trade designation “ACTIRON” NXJ-60.
- modified amine compounds include epoxy amine additives formed by the addition of an amine compound to an epoxy compound
- modified imidazole compounds include imidazole adducts formed by the addition of an imidazole compound to an epoxy compound.
- a commercially available modified amine compound particularly useful herein is "NOVACURE” HX-3722 (an imidazole/bisphenol A epoxy adduct dispersed in bisphenol A epoxy resin, commercially available from Asahi-Ciba Ltd.), and "MY-24” (an imidazole/bisphenol A epoxy adduct, commercially available from Ajinomoto Co., Ltd.) .
- ANCAMINE 2337S is described by Air Products as a modified aliphatic amine, which is a light yellow powder in appearance with a particle size of 90% ⁇ 10 ⁇ , whose melting point is in the range of 145-172°F.
- ANCAMINE 2337S is reported to have an amine value of 260 (mg KOH/gram) , and rapid reactivity above a temperature of 158°F.
- ANCAMINE 2337S is a novolac-type resin that has been modified through reaction with aliphatic amines, such as polyamines, pyrazines, pyridines, pyroles and pyrazoles . (See FIGs . 8-9 for characterizing data.)
- the "ANCAMINE” 2337S itself is substantially insoluble at room temperature in conventional non-basic organic solvents, though was found to be soluble in pyridine.
- the curing agent should be present in an amount with the range of about 5% by weight to about 90% by weight, desirably about 20% by weight to about 60% by weight, such as about 50% by weight of the total composition.
- compositions may also include an anhydride component where the curing agent of the compositions is not based on anhydride reactivity, as well as an inorganic filler component .
- Appropriate anhydride compounds for use herein include mono- and poly-anhydrides, such as hexahydrophthalic anhydride (“HHPA”) and methyl hexahydrophthalic anhydride (“MHHPA”) (commercially available from Lindau Chemicals, Inc., Columbia, South Carolina, used individually or as a combination, which combination is available under the trade designation "LINDRIDE” 62C) and 5- (2 , 5-dioxotetrahydrol) -3- methyl-3-cyclohexene-l, 2-dicarboxylic anhydride (commercially available from ChrisKev Co., Leewood, Kansas under the trade designation B-4400) .
- MTA-15 mixture of glycol tris-anhydrotrimeritate and MHHPA, commercially available from New Japan Chemical Co., Ltd.
- the anhydride compound may be present in an amount within the range of about 5% by weight to about 90% by weight, desirably about 10% by weight to about 60% by weight, such as about 40% by weight of the total composition.
- the inorganic filler component may often include reinforcing silicas, such as fused silicas, and may be untreated or treated so as to alter the chemical nature of their surface. Virtually any reinforcing fused silica may be used.
- Particularly desirable ones have a low ion concentration and are relatively small in particle size (e.g., in the range of about 2-10 microns, such as on the order of about 2 microns) , such as the silica commercially available from Admatechs, Japan under the trade designation SO-E5.
- the inorganic filler component may be present in an amount within the range of about 5% by weight to about 95% by weight, desirably about 20% by weight to about 60% by weight, such as about 40% by weight of the total composition .
- composition may also include a flowability agent, such as a silane and/or titanate.
- a flowability agent such as a silane and/or titanate.
- silanes for use herein include octyl trimethoxy silane (commercially available from OSI Specialties Co., Danbury, Connecticut under the trade designation A-137), and methacryloxy propyl trimethoxy silane (commercially available from OSI under the trade designation A-174) .
- titanates for use herein include titanium IV tetrakis [2, 2-bis [ (2-propenyloxy) methyl] -1- butanolato-0] [bis (ditridecylphosphito-0) , dihydrogen] 2 (commercially available from Kenrich Petrochemical Inc., Bayonne, New Jersey under the trade designation KR-55) .
- the flowability agent When used, the flowability agent may be used in an amount of 0 to about 2 parts by weight, per 100 parts of the epoxy resin.
- adhesion promoters such as the silanes, glycidyl trimethoxysilane (commercially available from OSI under the trade designation A-187) or gamma-amino propyl triethoxysilane (commercially available from OSI under the trade designation A-1100), may be used.
- Cyanate esters may also be used in the inventive compositions.
- the cyanate esters useful as a component in the inventive compositions may be chosen from dicyanatobenzenes, tricyanatobenzenes, dicyanatonaphthalenes, tricyanatonaphthalenes, dicyanato-biphenyl, bis (cyanatophenyl) methanes and alkyl derivatives thereof, bis (dihalocyanatophenyl) propanes, bis (cyanatophenyl) ethers, bis (cyanatophenyl) sulfides, bis (cyanatophenyl) propanes, tris (cyanatophenyl) phosphites, tris (cyanatophenyl) phosphates, bis (halocyanatophenyl) methanes, cyanated novolac, bis [cyanatophenyl ( ethylethylidene) ] benzene, cyanated bisphenol-terminated thermoplastic
- aryl compounds having at least one cyanate ester group on each molecule may be generally represented by the formula Ar(OCN) m , where Ar is an aromatic radical and m is an integer from 2 to 5.
- the aromatic radical Ar should contain at least 6 carbon atoms, and may be derived, for example, from aromatic hydrocarbons, such as benzene, biphenyl, naphthalene, anthracene, pyrene or the like.
- the aromatic radical Ar may also be derived from a polynuclear aromatic hydrocarbon in which at least two aromatic rings are attached to each other through a bridging group.
- the aromatic radical Ar may also contain further ring-attached, non-reactive substituents .
- cyanate esters include, for instance, 1, 3-dicyanatobenzene; 1, 4-dicyanatobenzene; 1,3,5- tricyanatobenzene; 1,3-, 1,4-, 1,6-, 1,8-, 2,6- or 2,7- dicyanatonaphthalene; 1, 3, 6-tricyanatonaphthalene; 4,4'- dicyanato-biphenyl; bis (4-cyanatophenyl) methane and 3, 3', 5,5'- tetramethyl bis ( 4-cyanatophenyl) methane; 2 , 2-bis (3, 5-dichloro- 4 -cyanatophenyl) propane; 2, 2-bis (3, 5-dibromo-4- dicyanatophenyl) propane; bis (4-cyanatophenyl) ether; bis (4- cyanatophenyl) sulfide; 2, 2-bis ( 4-cyanatophenyl) propane; tris (4-cyanatophenyl) -phosphite; tri
- cyanate esters include cyanates disclosed in
- the cyanate esters When used, the cyanate esters may be used in an amount of about 1 to about 20% by weight based on the total amount of the epoxy resin component.
- compositions of the present invention may also be used in the compositions of the present invention to achieve certain desired physical properties of the composition, the cured reaction product, or both.
- a multifunctional epoxy resin reactive diluent examples of which include those from Pacific Epoxy Polymers, under the trade designations PEP-6752 (trimethylolpropane triglycidyl ether) and PEP-6760 (diglycidyl aniline) .
- thermosetting resin composition of the present invention may further contain other additives, such as defoaming agents, leveling agents, dyes and pigments.
- photopolymerization initiators may also be incorporated therein, provided that such initiators do not adversely affect the properties of the composition or reaction products formed therefrom.
- thermosetting resin composition of the present invention may be formulated as a one-part composition, in which all the ingredients are mixed together, or as a two-part composition, in which the epoxy resin and the curing agent are stored separately and mixed thereafter prior to use.
- the curing agent used in the present invention can generally be any of the curing agents that are used in one-part and two-part epoxy resin formulations, particularly those noted above .
- the thermosetting resin compositions according to the present invention are capable of penetrating into the space between the circuit board and the semiconductor device. These inventive compositions also demonstrate a reduced viscosity, at least under elevated temperature conditions, and thus are capable of penetrating into that space.
- thermosetting resin composition by selecting the types and proportions of various ingredients to reach a viscosity at 25°C of 10,000 mPa • s or less, such as 3,000 - 4,000 mPa-s, so as to improve its ability to penetrate into the space (e.g., of 50 to 500 ⁇ m) between the circuit board and the semiconductor device.
- FIG. 1 shows an example of a semiconductor device mounting structure, such as a CSP, in which the thermosetting resin composition of the present invention is used.
- the semiconductor device 4 is one formed by connecting a semiconductor chip (so-called bare chip) 2, such as LSI, to a carrier substrate 1 and sealing the space therebetween suitably with resin 3.
- This semiconductor device is mounted at a predetermined position of the circuit board 5, and electrodes 8 and 9 are electrically connected by a suitable connection means such as solder.
- the space between carrier substrate 1 and circuit board 5 is sealed with the cured product 10 of a thermosetting resin composition.
- the cured product 10 of the thermosetting resin composition need not completely fill the space between carrier substrate 1 and circuit board 5, but may fill it to such an extent as to relieve stresses caused by thermal cycling.
- Carrier substrates may be constructed from ceramic substrates made of AI2O3, SiN and mullite (Al2 ⁇ 3 ⁇ Si ⁇ 2 ) ; substrates or tapes made of heat-resistant resins such as polyimides; glass-reinforced epoxy, ABS and phenolic substrates which are also used commonly as circuit boards; and the like.
- FIG. 3 shows a flip chip assembly in which a semiconductor chip has been mounted onto a circuit board, and the underfilling sealed with a thermosetting resin composition of the present invention .
- the flip chip assembly 34 is formed by connecting a semiconductor chip (a bare chip) 32 to a circuit board 31 and sealing the space therebetween suitably with a thermosetting resin composition 33.
- This semiconductor device is mounted at a predetermined position on the circuit board 31 and electrodes 35 and 36 are electrically connected by a suitable electrical connection means 37 and 38, such as solder.
- a suitable electrical connection means 37 and 38 such as solder.
- the space between the semiconductor chip 32 and the circuit board 31 is sealed with a thermosetting resin composition 33 and then cured. The cured product of the thermosetting resin composition should completely fill that space.
- the means for electrically connecting the semiconductor chip to the carrier substrate there may be employed connection by a high- melting solder or electrically (or anisotropically) conductive adhesive, wire bonding, and the like.
- the electrodes may be formed as bumps.
- the space between the semiconductor chip and the carrier substrate may be sealed with a suitable resin.
- the semiconductor devices that can be used in the present invention include CSPs, BGAs, and LGAs.
- circuit board used in the present invention No particular limitation is placed on the type of circuit board used in the present invention, and there may be used any of various common circuit boards such as glass- reinforced epoxy, ABS and phenolic boards.
- cream solder is printed at the necessary positions of a circuit board and suitably dried to expel the solvent.
- a semiconductor device is mounted in conformity with the pattern on the circuit board.
- This circuit board is passed through a reflowing furnace to melt the solder and thereby solder the semiconductor device.
- the electrical connection between the semiconductor device and the circuit board is not limited to the use of cream solder, but may be made by use of solder balls. Alternatively, this connection may also be made through an electrically conductive adhesive or an anisotropically conductive adhesive. Moreover, cream solder or the like may be applied or formed on either the circuit board or the semiconductor device. In order to facilitate subsequent repairs, the solder, electrically or anisotropically conductive adhesive used should be chosen bearing in mind its melting point, bond strength and the like.
- the resulting structure should ordinarily be subjected to a continuity test or the like.
- the semiconductor device may be fixed thereto with a resin composition.
- a resin composition In this way, in the event of a failure, it is easier to remove the semiconductor device before fixing it with the resin composition .
- a thermosetting resin composition is applied to the periphery of the semiconductor device. When this composition is applied to the semiconductor device, it penetrates into the space between the circuit board and the carrier substrate of the semiconductor device by capillary action.
- thermosetting resin composition is cured by the application of heat.
- the thermosetting resin composition shows a significant reduction in viscosity and hence an increase in fluidity, so that it more easily penetrates into the space between the circuit board and the semiconductor device.
- the thermosetting resin composition is allowed to penetrate fully into the entire space between the circuit board and the semiconductor device.
- thermosetting resin composition applied should be suitably adjusted so as to fill the space between the circuit board and the semiconductor device almost completely.
- thermosetting resin composition When the above-described thermosetting resin composition is used, it is usually cured by heating at a temperature of about 80°C to about 150°C for a period of time of about 5 to about 60 minutes.
- the present invention can employ relatively low-temperature and short-time curing conditions and hence achieve very good productivity.
- the semiconductor device mounting structure illustrated in FIG. 1 is completed in this manner.
- thermosetting resin composition of the present invention In the mounting process using the thermosetting resin composition of the present invention, after the semiconductor device is mounted on the circuit board as described above, the resulting structure is tested with respect to characteristics of the semiconductor device, connection between the semiconductor device and the circuit board, other electrical characteristics, and the state of sealing. In the event a failure is found, repair can be made in the following manner.
- the area around the semiconductor device that has failed is heated at a temperature of about 190°C to about 260°C for a period of time ranging from about 10 seconds to about 60 seconds.
- a temperature of about 190°C to about 260°C for a period of time ranging from about 10 seconds to about 60 seconds.
- local heating is preferred.
- the semiconductor device As soon as the solder is melted and the resin is softened to cause a reduction in bond strength, the semiconductor device is pulled apart.
- a residue 12 of the cured reaction product of the thermosetting resin composition and a residue 14 of the solder are left on the circuit board 5.
- the residue of the cured product of the thermosetting resin composition can be removed, for example, by scraping it off after the residue has been softened by heating it to a predetermined temperature, allowing it to swell with solvent, or allowing it to swell with solvent while heating it to a predetermined temperature.
- the residue can be most easily removed by using both heating and solvent.
- the residue can be scraped off after it has been softened by allowing the residual resin to swell with solvent while keeping the entire circuit board at a temperature of about 100°C (usually in the range of about 80°C to about 120°C) .
- the solvent used for this purpose is one which causes cured reaction products of the thermosetting resin composition to swell, thereby reducing bond strength to such an extent that the cured material can be scraped off from the circuit board.
- Useful solvents include organic ones, for example, alkyl chlorides, such as methylene chloride; glycol ethers, such as ethyl cellulose and butyl cellulose; diesters of dibasic acids, such as diethyl succinate; and N- methylpyrrolidone . Of course, appropriate combinations may also be employed.
- the chosen solvents should cause no damage to the resist.
- Desirable solvents with this in mind include glycol ethers and N-methylpyrrolidone .
- the residue of the solder can be removed, for example, by use of a solder-absorbing braided wire.
- a new semiconductor device may be mounted again in the same manner as described previously.
- the repair of the failure site is completed.
- the semiconductor device can be reused by removing the residue 13 of the cured reaction product of the thermosetting resin composition and the residue 15 of the solder left on the bottom of the semiconductor device in the same manner as described above. (See FIG. 4.)
- thermosetting resin compositions in accordance with the present invention may be prepared from the components as noted below in Tables la-lf.
- Sample Nos. 24-30 were prepared substantially as Sample Nos. 17-23, save for the curable resin, which was replaced with a comparable amount of an epoxy resin -- either bisphenol-A-type epoxy resin or bisphenol-F-type epoxy resin. See Table Id.
- Sample Nos. 40-48 were prepared as Sample Nos. 31-39, save for the curable resin, which was replaced with a comparable amount of an epoxy resin — either bisphenol-A-type epoxy resin or bisphenol-F-type epoxy resin.
- the comparative samples are presented in Table If.
- compositions were observed to have the viscosity values in mPa ⁇ s as set forth in Table 2.
- reaction products of the composition were observed to have a glass transition temperature (“Tg”) as measured by thermal mechanical analysis (“TMA”), cd and ⁇ 2 , and expansion when cycled between extreme temperatures of about 0°C and about 140°C as set forth in Tables 2a-2d.
- Tg glass transition temperature
- TMA thermal mechanical analysis
- the viscosity of the majority of these samples is suitable for use as an underfill sealant. That is, a viscosity less than about 10,000 mPa • s .
- the Tg values for the samples listed are suitable for use as an underfill sealant.
- the coefficient of thermal expansion values for the samples were between about 0°C and about 140°C, which is suitable for use as an underfill sealant .
- thermosetting resin composition was applied to the periphery of the CSP by means of a dispenser, and then cured by heating in an environment where the temperature was held at about at 150°C for a period of time of about 60 minutes.
- the thermosetting resin composition penetrated into the space between the semiconductor device and the circuit board before curing completely.
- the area around the CSP fixed to the circuit board with the thermosetting resin composition as described above was heated by applying hot air at 250°C for 1 minute. Then, the CSP could be easily removed by inserting a metal piece between the CSP and the glass- reinforced epoxy board, and lifting the CSP.
- the glass-reinforced epoxy board was kept at a temperature of about 100°C by placing it on a hot plate (or by heating it with a far-infrared heater or the like) , the resin left on the glass-reinforced epoxy board was allowed to swell with a solvent such as PS-1 (manufactured by Dai-ichi Kogyo Seiyaku Co., Ltd.) or 7360 (manufactured by Loctite Corporation), and then scraped off with a spatula.
- PS-1 manufactured by Dai-ichi Kogyo Seiyaku Co., Ltd.
- 7360 manufactured by Loctite Corporation
- FIG. 5 shows the temperature range at which a cured reaction product of a XBO-based composition curable through a cationic cure mechanism (Sample No. 23) in accordance with the invention loses weight by virtue of thermal degradation as it is exposed to an increase in temperature contrasted to a cured reaction product of a composition based on bisphenol-F-type epoxy resin curable through a cationic cure mechanism (Sample No. 30) .
- FIG. 6 shows the temperature range at which a cured reaction product of a MPG-based composition (Sample No. 17) in accordance with the invention loses weight by virtue of thermal degradation as it is exposed to an increase in temperature contrasted to a cured reaction product of a composition based on bisphenol-F-type epoxy resin (Sample No. 29) . 40
- FIG. 7 shows the temperature range at which a cured reaction product of a CBO-based composition curable through a cationic cure mechanism (Sample No. 32) in accordance with the invention loses weight by virtue of thermal degradation as it is exposed to an increase in temperature contrasted to a cured reaction product of a composition based on bisphenol-F-type epoxy resin curable through a cationic cure mechanism (Sample No. 40) .
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Abstract
Description
Claims
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
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US13948699P | 1999-06-17 | 1999-06-17 | |
US139486P | 1999-06-17 | ||
US19339200P | 2000-03-31 | 2000-03-31 | |
US19339100P | 2000-03-31 | 2000-03-31 | |
US193392P | 2000-03-31 | ||
US193391P | 2000-03-31 | ||
US21047000P | 2000-06-09 | 2000-06-09 | |
US210470P | 2000-06-09 | ||
PCT/US2000/011878 WO2000079582A1 (en) | 1999-06-17 | 2000-06-16 | Controllably degradable composition of heteroatom carbocyclic or epoxy resin and curing agent |
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EP1194953A1 EP1194953A1 (en) | 2002-04-10 |
EP1194953A4 true EP1194953A4 (en) | 2002-09-04 |
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ID=27495368
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EP00942630A Withdrawn EP1194953A4 (en) | 1999-06-17 | 2000-06-16 | Controllably degradable composition of heteroatom carbocyclic or epoxy resin and curing agent |
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EP (1) | EP1194953A4 (en) |
JP (1) | JP4718070B2 (en) |
KR (1) | KR100372211B1 (en) |
CN (1) | CN1178287C (en) |
AU (1) | AU5722700A (en) |
CA (1) | CA2374187A1 (en) |
MX (1) | MXPA01013054A (en) |
WO (1) | WO2000079582A1 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4609617B2 (en) * | 2000-08-01 | 2011-01-12 | 日本電気株式会社 | Semiconductor device mounting method and mounting structure |
WO2002058108A2 (en) | 2000-11-14 | 2002-07-25 | Henkel Loctite Corporation | Wafer applied fluxing and underfill material, and layered electronic assemblies manufactured therewith |
US6800371B2 (en) | 2001-03-07 | 2004-10-05 | 3M Innovative Properties Company | Adhesives and adhesive compositions containing thioether groups |
EP1674495A1 (en) * | 2004-12-22 | 2006-06-28 | Huntsman Advanced Materials (Switzerland) GmbH | Coating system |
KR100671137B1 (en) | 2004-12-30 | 2007-01-17 | 제일모직주식회사 | Reworkable liquid epoxy resin composition for underfill application and a semiconductor element thereof |
US8075721B2 (en) * | 2005-10-25 | 2011-12-13 | Henkel Corporation | Low exothermic thermosetting resin compositions useful as underfill sealants and having reworkability |
KR101148051B1 (en) * | 2005-12-26 | 2012-05-25 | 에스케이케미칼주식회사 | Epoxy resin composition |
JP4923946B2 (en) * | 2006-10-24 | 2012-04-25 | ダイソー株式会社 | Polyether-based multi-component copolymer and cross-linked product thereof |
JP4931079B2 (en) * | 2007-12-21 | 2012-05-16 | パナソニック株式会社 | Liquid thermosetting resin composition for underfill and semiconductor device using the same |
JP5098997B2 (en) * | 2008-12-22 | 2012-12-12 | 富士通株式会社 | Semiconductor device, repair method thereof, and manufacturing method of semiconductor device |
KR101266540B1 (en) | 2008-12-31 | 2013-05-23 | 제일모직주식회사 | Liquid epoxy resin composition for underfilling semiconductor device and semiconductor device using the same |
CN102153724A (en) * | 2010-02-11 | 2011-08-17 | 中国科学院化学研究所 | Aromatic polyether glycidyl ether epoxide resin and preparation method of aromatic polyether glycidyl ether epoxide resin |
SG10201602081SA (en) | 2011-05-31 | 2016-04-28 | Mitsubishi Gas Chemical Co | Resin composition, prepreg, and laminate |
SG11201503925QA (en) * | 2012-11-28 | 2015-06-29 | Mitsubishi Gas Chemical Co | Resin composition, prepreg, laminate, metallic foil clad laminate, and printed circuit board |
JP6596412B2 (en) | 2013-03-22 | 2019-10-23 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | Thermosetting resin composition having diene / dienophile pair and repairability |
JP6097815B1 (en) | 2015-12-18 | 2017-03-15 | 古河電気工業株式会社 | Adhesive composition, adherend bonding method using the same, and laminate manufacturing method |
CN106117518A (en) * | 2016-06-22 | 2016-11-16 | 柳州市强威锻造厂 | A kind of imidazoles epoxy resin cure formula |
CN108530661B (en) * | 2018-02-14 | 2020-09-25 | 苏州大学 | Super-hydrophobic electrothermal epoxy resin composite material and preparation and self-repairing method thereof |
CN110213905B (en) * | 2019-05-27 | 2021-01-08 | 维沃移动通信有限公司 | Packaging method of assembled circuit board, assembled circuit board and terminal |
KR20220085616A (en) | 2020-12-15 | 2022-06-22 | 삼성전자주식회사 | Epoxy compound, Composition prepared therefrom, Semiconductor device prepared therefrom, Electronic Device prepared therefrom, Article prepared therefrom, and Method for preparing article |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63159426A (en) * | 1986-12-23 | 1988-07-02 | Sumitomo Bakelite Co Ltd | Flexible epoxy resin composition |
JPH06136092A (en) * | 1992-10-27 | 1994-05-17 | New Japan Chem Co Ltd | Epoxy resin composition |
JPH06184409A (en) * | 1992-12-18 | 1994-07-05 | Tokuyama Soda Co Ltd | Electrically conductive curable composition |
JPH0812741A (en) * | 1994-07-04 | 1996-01-16 | New Japan Chem Co Ltd | Liquid epoxy resin composition |
US5512613A (en) * | 1991-09-05 | 1996-04-30 | International Business Machines Corporation | Cleavable diepoxide for removable epoxy compositions |
JPH09316421A (en) * | 1996-03-27 | 1997-12-09 | Sumitomo Seika Chem Co Ltd | Adhesive |
JPH1117074A (en) * | 1997-06-26 | 1999-01-22 | Jsr Corp | Semiconductor device and sealing compsn. therefor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5842290A (en) * | 1981-09-07 | 1983-03-11 | 日立化成工業株式会社 | Substrate for flexible printed circuit |
JPS62295029A (en) * | 1986-06-16 | 1987-12-22 | Hitachi Ltd | Liquid crystal display element |
JPH0218412A (en) * | 1988-07-07 | 1990-01-22 | Sumitomo Bakelite Co Ltd | Flexible epoxy resin composition |
JP3193112B2 (en) * | 1992-03-25 | 2001-07-30 | 株式会社タイルメント | One-part flexible epoxy resin composition and sealing material or adhesive comprising the same |
JPH06256468A (en) * | 1993-03-08 | 1994-09-13 | Toray Chiokoole Kk | Binder resin for water-permeable pavement |
US5932682A (en) * | 1995-12-19 | 1999-08-03 | International Business Machines Corporation | Cleavable diepoxide for removable epoxy compositions |
US6008266A (en) * | 1996-08-14 | 1999-12-28 | International Business Machines Corporation | Photosensitive reworkable encapsulant |
JPH10120753A (en) * | 1996-10-17 | 1998-05-12 | Hitachi Chem Co Ltd | Molding material for sealing and electronic part |
JPH10152554A (en) * | 1996-11-21 | 1998-06-09 | Nippon Kayaku Co Ltd | Composition curable by energy ray and its cured product |
-
2000
- 2000-06-16 CN CNB008096821A patent/CN1178287C/en not_active Expired - Fee Related
- 2000-06-16 AU AU57227/00A patent/AU5722700A/en not_active Abandoned
- 2000-06-16 KR KR10-2001-7016219A patent/KR100372211B1/en not_active IP Right Cessation
- 2000-06-16 WO PCT/US2000/011878 patent/WO2000079582A1/en not_active Application Discontinuation
- 2000-06-16 JP JP2001505052A patent/JP4718070B2/en not_active Expired - Fee Related
- 2000-06-16 CA CA002374187A patent/CA2374187A1/en not_active Abandoned
- 2000-06-16 EP EP00942630A patent/EP1194953A4/en not_active Withdrawn
- 2000-06-16 MX MXPA01013054A patent/MXPA01013054A/en unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63159426A (en) * | 1986-12-23 | 1988-07-02 | Sumitomo Bakelite Co Ltd | Flexible epoxy resin composition |
US5512613A (en) * | 1991-09-05 | 1996-04-30 | International Business Machines Corporation | Cleavable diepoxide for removable epoxy compositions |
JPH06136092A (en) * | 1992-10-27 | 1994-05-17 | New Japan Chem Co Ltd | Epoxy resin composition |
JPH06184409A (en) * | 1992-12-18 | 1994-07-05 | Tokuyama Soda Co Ltd | Electrically conductive curable composition |
JPH0812741A (en) * | 1994-07-04 | 1996-01-16 | New Japan Chem Co Ltd | Liquid epoxy resin composition |
JPH09316421A (en) * | 1996-03-27 | 1997-12-09 | Sumitomo Seika Chem Co Ltd | Adhesive |
JPH1117074A (en) * | 1997-06-26 | 1999-01-22 | Jsr Corp | Semiconductor device and sealing compsn. therefor |
Non-Patent Citations (9)
Title |
---|
CHEMICAL ABSTRACTS, vol. 100, no. 20, 14 May 1984, Columbus, Ohio, US; abstract no. 157412, SERGEEV ET AL.: "Diglycidyl aromatic thio ethers and epoxy polymers derived from them" XP002932993 * |
PATENT ABSTRACTS OF JAPAN vol. 012, no. 433 (C - 543) 15 November 1988 (1988-11-15) * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 443 (C - 1239) 18 August 1994 (1994-08-18) * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 528 (C - 1258) 6 October 1994 (1994-10-06) * |
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05 31 May 1996 (1996-05-31) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 04 31 March 1998 (1998-03-31) * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 04 30 April 1999 (1999-04-30) * |
See also references of WO0079582A1 * |
VYSOKOMOL. SOEDIN., SER.A(1984), 26(1),208-211 * |
Also Published As
Publication number | Publication date |
---|---|
JP4718070B2 (en) | 2011-07-06 |
CN1384975A (en) | 2002-12-11 |
AU5722700A (en) | 2001-01-09 |
JP2003502484A (en) | 2003-01-21 |
WO2000079582A1 (en) | 2000-12-28 |
WO2000079582A9 (en) | 2001-03-15 |
MXPA01013054A (en) | 2003-08-20 |
CN1178287C (en) | 2004-12-01 |
KR100372211B1 (en) | 2003-02-14 |
KR20020027352A (en) | 2002-04-13 |
EP1194953A1 (en) | 2002-04-10 |
CA2374187A1 (en) | 2000-12-28 |
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