JP4674221B2 - 発光ダイオードパッケージ - Google Patents
発光ダイオードパッケージ Download PDFInfo
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- JP4674221B2 JP4674221B2 JP2007061825A JP2007061825A JP4674221B2 JP 4674221 B2 JP4674221 B2 JP 4674221B2 JP 2007061825 A JP2007061825 A JP 2007061825A JP 2007061825 A JP2007061825 A JP 2007061825A JP 4674221 B2 JP4674221 B2 JP 4674221B2
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- Prior art keywords
- light emitting
- emitting diode
- substrate
- aluminum
- diode package
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- 239000000758 substrate Substances 0.000 claims abstract description 149
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 76
- 229910052782 aluminium Inorganic materials 0.000 claims description 75
- 239000010407 anodic oxide Substances 0.000 claims description 35
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000005611 electricity Effects 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000007743 anodising Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60P—VEHICLES ADAPTED FOR LOAD TRANSPORTATION OR TO TRANSPORT, TO CARRY, OR TO COMPRISE SPECIAL LOADS OR OBJECTS
- B60P3/00—Vehicles adapted to transport, to carry or to comprise special loads or objects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R15/00—Arrangements or adaptations of sanitation devices
- B60R15/02—Washing facilities
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47K—SANITARY EQUIPMENT NOT OTHERWISE PROVIDED FOR; TOILET ACCESSORIES
- A47K3/00—Baths; Douches; Appurtenances therefor
- A47K3/02—Baths
- A47K3/06—Collapsible baths, e.g. inflatable; Movable baths
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2200/00—Type of vehicle
- B60Y2200/10—Road Vehicles
- B60Y2200/14—Trucks; Load vehicles, Busses
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24H—FLUID HEATERS, e.g. WATER OR AIR HEATERS, HAVING HEAT-GENERATING MEANS, e.g. HEAT PUMPS, IN GENERAL
- F24H1/00—Water heaters, e.g. boilers, continuous-flow heaters or water-storage heaters
- F24H1/54—Water heaters for bathtubs or pools; Water heaters for reheating the water in bathtubs or pools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
110、210 アルミニウム基板
120、220a、220b、220c 発光ダイオードチップ
130、230a、230b ツェナーダイオード
111a、211a 第1基板電極
111b、211b 第2基板電極
211c 第3基板電極
211d 第4基板電極
211e 第5基板電極
211f 第6基板電極
112、112a、112b、212a、212b、212c、212d アルミニウム陽極酸化膜
113、213 反射コップ
114 レンズ固定部
140a、240a 第1背面電極
140b、240b 第2背面電極
240c 第3背面電極
240d 第4背面電極
240e 第5背面電極
240f 第6背面電極
150、250 レンズ
260 アルミニウム陽極酸化膜パターン
300 アレイ基板
Claims (18)
- 上部に形成された凹部を有するアルミニウム基板と、
前記凹部の底面に実装された少なくとも一つの発光ダイオードチップとを含み、
前記凹部の底面は前記アルミニウム基板を貫通するアルミニウム陽極酸化膜により複数の基板電極に分離され、少なくとも一つの前記基板電極は前記アルミニウム陽極酸化膜に囲われており、前記複数の基板電極は各々前記発光ダイオードチップと電気的に連結されていることを特徴とする発光ダイオードパッケージ。 - 前記アルミニウム基板の下面に形成され前記複数の基板電極に各々電気的に連結された複数の背面電極をさらに含むことを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記アルミニウム陽極酸化膜は、前記アルミニウム基板を貫通して前記アルミニウム基板の側面まで延長されていることを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記凹部の底面に実装された少なくとも一つのツェナーダイオードをさらに含むことを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記凹部の上に形成されたレンズをさらに含むことを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記凹部の上面に形成され、前記レンズを固定する固定部をさらに含むことを特徴とする請求項5に記載の発光ダイオードパッケージ。
- 前記発光ダイオードチップは、一つの発光ダイオードチップを含むことを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記凹部の底面は前記アルミニウム基板を貫通するアルミニウム陽極酸化膜により第1及び第2基板電極に分離され、前記第1及び第2基板電極のうち少なくとも一つの基板電極は前記アルミニウム陽極酸化膜に囲われており、前記第1及び第2基板電極は各々前記発光ダイオードチップと電気的に連結されていることを特徴とする請求項7に記載の発光ダイオードパッケージ。
- 前記第1及び第2基板電極は、各々前記アルミニウム陽極酸化膜に囲われていることを特徴とする請求項8に記載の発光ダイオードパッケージ。
- 前記アルミニウム基板の下面に、前記第1及び第2基板電極に各々電気的に連結される第1及び第2背面電極をさらに含むことを特徴とする請求項8に記載の発光ダイオードパッケージ。
- 前記凹部の底面に実装された一つのツェナーダイオードをさらに含み、
前記発光ダイオードチップは前記第1基板電極に実装され、前記ツェナーダイオードは前記第2基板電極に実装されることを特徴とする請求項8に記載の発光ダイオードパッケージ。 - 前記発光ダイオードチップは、複数の発光ダイオードチップを含むことを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記複数の発光ダイオードチップは、3つの発光ダイオードチップであることを特徴とする請求項12に記載の発光ダイオードパッケージ。
- 前記3つの発光ダイオードチップは、各々緑色、青色及び赤色の光を放出する発光ダイオードチップであることを特徴とする請求項13に記載の発光ダイオードパッケージ。
- 前記凹部の底面は前記アルミニウム基板を貫通するアルミニウム陽極酸化膜により第1乃至第6基板電極に分離され、前記第1乃至第6基板電極のうち少なくとも5個の基板電極は前記アルミニウム陽極酸化膜に囲われており、前記第1乃至第6基板電極は各々前記発光ダイオードチップと電気的に連結されていることを特徴とする請求項13に記載の発光ダイオードパッケージ。
- 前記アルミニウム基板の下面に形成され、前記第1乃至第6基板電極に各々電気的に連結された第1乃至第6背面電極をさらに含むことを特徴とする請求項15に記載の発光ダイオードパッケージ。
- 前記凹部の底面に実装された2つのツェナーダイオードをさらに含み、
前記3つの発光ダイオードチップは各々第1、第2及び第3基板電極に各々実装され、前記2つのツェナーダイオードは各々第4乃至第6基板電極のうち2つの基板電極に実装されたことを特徴とする請求項15に記載の発光ダイオードパッケージ。 - 前記凹部の底面に実装された3つのツェナーダイオードをさらに含み、
前記3つの発光ダイオードチップは各々第1、第2及び第3基板電極に実装され、前記3つのツェナーダイオードは各々第4、第5及び第6基板電極に実装されたことを特徴とする請求項15に記載の発光ダイオードパッケージ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060023519A KR100703218B1 (ko) | 2006-03-14 | 2006-03-14 | 발광다이오드 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007251167A JP2007251167A (ja) | 2007-09-27 |
JP4674221B2 true JP4674221B2 (ja) | 2011-04-20 |
Family
ID=38160782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007061825A Active JP4674221B2 (ja) | 2006-03-14 | 2007-03-12 | 発光ダイオードパッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US7566912B2 (ja) |
JP (1) | JP4674221B2 (ja) |
KR (1) | KR100703218B1 (ja) |
CN (1) | CN100517785C (ja) |
TW (1) | TWI338956B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101294711B1 (ko) | 2012-03-02 | 2013-08-08 | 주식회사 세미콘라이트 | 반도체 발광소자 |
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