JP4667955B2 - 発光素子、発光装置及び照明機器 - Google Patents
発光素子、発光装置及び照明機器 Download PDFInfo
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- JP4667955B2 JP4667955B2 JP2005145096A JP2005145096A JP4667955B2 JP 4667955 B2 JP4667955 B2 JP 4667955B2 JP 2005145096 A JP2005145096 A JP 2005145096A JP 2005145096 A JP2005145096 A JP 2005145096A JP 4667955 B2 JP4667955 B2 JP 4667955B2
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- 239000000126 substance Substances 0.000 claims description 123
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 39
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 38
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical group C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- -1 alkali metal nitride Chemical class 0.000 claims description 6
- 229910052783 alkali metal Inorganic materials 0.000 claims description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 2
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 claims description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 claims description 2
- 150000004982 aromatic amines Chemical class 0.000 claims 1
- 150000004696 coordination complex Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 323
- 239000010408 film Substances 0.000 description 54
- 230000032258 transport Effects 0.000 description 47
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 40
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 20
- 229910052744 lithium Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 230000005525 hole transport Effects 0.000 description 12
- 238000000295 emission spectrum Methods 0.000 description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- UOOBIWAELCOCHK-BQYQJAHWSA-N 870075-87-9 Chemical compound O1C(C(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 UOOBIWAELCOCHK-BQYQJAHWSA-N 0.000 description 8
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000010549 co-Evaporation Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229960000956 coumarin Drugs 0.000 description 4
- 235000001671 coumarin Nutrition 0.000 description 4
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 4
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DTZWGKCFKSJGPK-VOTSOKGWSA-N (e)-2-(2-methyl-6-(2-(1,1,7,7-tetramethyl-1,2,3,5,6,7-hexahydropyrido[3,2,1-ij]quinolin-9-yl)vinyl)-4h-pyran-4-ylidene)malononitrile Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 DTZWGKCFKSJGPK-VOTSOKGWSA-N 0.000 description 1
- OXMLYOWNIHJUJX-UHFFFAOYSA-N 1-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C=3C4=CC=CC=C4C(C=4C=C5C=CC=CC5=CC=4)=C4C=CC=C(C=34)C(C)(C)C)=CC=C21 OXMLYOWNIHJUJX-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical group CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- SCZWJXTUYYSKGF-UHFFFAOYSA-N 5,12-dimethylquinolino[2,3-b]acridine-7,14-dione Chemical compound CN1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3N(C)C1=C2 SCZWJXTUYYSKGF-UHFFFAOYSA-N 0.000 description 1
- VIZUPBYFLORCRA-UHFFFAOYSA-N 9,10-dinaphthalen-2-ylanthracene Chemical compound C12=CC=CC=C2C(C2=CC3=CC=CC=C3C=C2)=C(C=CC=C2)C2=C1C1=CC=C(C=CC=C2)C2=C1 VIZUPBYFLORCRA-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- SXGIRTCIFPJUEQ-UHFFFAOYSA-N 9-anthracen-9-ylanthracene Chemical group C1=CC=CC2=CC3=CC=CC=C3C(C=3C4=CC=CC=C4C=C4C=CC=CC4=3)=C21 SXGIRTCIFPJUEQ-UHFFFAOYSA-N 0.000 description 1
- MSDMPJCOOXURQD-UHFFFAOYSA-N C545T Chemical compound C1=CC=C2SC(C3=CC=4C=C5C6=C(C=4OC3=O)C(C)(C)CCN6CCC5(C)C)=NC2=C1 MSDMPJCOOXURQD-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- BKMIWBZIQAAZBD-UHFFFAOYSA-N diindenoperylene Chemical compound C12=C3C4=CC=C2C2=CC=CC=C2C1=CC=C3C1=CC=C2C3=CC=CC=C3C3=CC=C4C1=C32 BKMIWBZIQAAZBD-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/02—Oxides; Hydroxides
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H10K50/16—Electron transporting layers
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Description
図1において、第1の電極101と第2の電極102との間には、正孔を輸送し易い物質と電子受容性の物質とを含んで成る第1の層103と、電子を輸送し易い物質と電子供与性の物質とを含んで成る第2の層104とを有する。そして、第1の層103と第2の層104とは接し、積層している。なお、正孔を輸送し易い物質と電子受容性の物質とを含んで成る第1の層103では正孔が生成され、電子を輸送し易い物質と電子供与性の物質とを含んで成る第2の層104では電子が生成される。
本実施の形態では、3つの発光層を含む本発明の発光素子について図2を用いて説明する。
実施の形態1または実施の形態2において説明した本発明の発光素子は、表示機能を有する発光装置の画素部や、照明機能を有する発光装置の照明部に適用することができる。
本発明の発光素子を含む発光装置の断面図の一態様について、図7を用いて説明する。
本発明を適用した発光装置は、耐湿性が良いため、本発明の発光装置を実装することによって、長期間に渡って良好な表示を行うことができる電子機器、または長期間に渡って良好に照明することができる電化製品を得ることができる。
102 第2の電極
103 第1の層
104 第2の層
111 第1の発光層
121 第2の発光層
201 第1の電極
202 第2の電極
203 第1の層
205 第1の層
207 第1の層
204 第2の層
206 第2の層
208 第2の層
211 第1の発光層
221 第2の発光層
231 第3の発光層
212 正孔輸送層
222 正孔輸送層
232 正孔輸送層
213 電子輸送層
223 電子輸送層
233 電子輸送層
6500 基板
6503 FPC
6504 プリント配線基盤(PWB)
6511 画素部
6512 ソース信号線駆動回路
6513 書込用ゲート信号線駆動回路
6514 消去用ゲート信号線駆動回路
901 第1のトランジスタ
902 第2のトランジスタ
903 発光素子
911 ゲート信号線
912 ソース信号線
913 書込用ゲート信号線駆動回路
914 消去用ゲート信号線駆動回路
915 ソース信号線駆動回路
916 電源
917 電流供給線
918 スイッチ
919 スイッチ
920 スイッチ
1001 第1のトランジスタ
1002 第2のトランジスタ
1003 ゲート信号線
1004 ソース信号線
1005 電流供給線
1006 電極
501 サブフレーム
502 サブフレーム
503 サブフレーム
504 サブフレーム
501a 書き込み期間
501b 保持期間
502a 書き込み期間
502b 保持期間
503a 書き込み期間
503b 保持期間
504a 書き込み期間
504b 保持期間
504c 消去期間
504d 非発光期間
10 基板
11 トランジスタ
12 発光素子
13 第1の電極
14 第2の電極
15 層
16 第1層間絶縁膜
16a 第1層間絶縁膜
16b 第1層間絶縁膜
16c 第1層間絶縁膜
17 配線
18 隔壁層
19 第2層間絶縁膜
5521 本体
5522 筐体
5523 表示部
5524 キーボード
5551 表示部
5552 本体
5553 アンテナ
5554 音声出力部
5555 音声入力部
5556 操作スイッチ
5531 表示部
5532 筐体
5533 スピーカー
300 基板
301 層
302 層
303 層
304 層
305 層
306 層
307 層
308 層
309 層
310 層
311 層
312 層
313 層
314 層
315 層
316 層
317 層
Claims (12)
- 第1の電極と第2の電極との間に、n(nは2以上の自然数)個の発光層を有し、
m(mは自然数、1≦m≦n−1)番目の発光層上に電子輸送性の物質と電子供与性の物質とを含む第2の層と、
前記第2の層上に正孔輸送性の物質とモリブデン酸化物とを含む第1の層と、
前記第1の層上にm+1番目の発光層と、を有し、
前記第1の電極に接して、正孔輸送性の物質とモリブデン酸化物とを含む層を有する
ことを特徴とする発光素子。 - 請求項1において、前記第1の電極に高電圧を印加し、前記第2の電極に低電圧を印加したとき、前記第1の層から前記m+1番目の発光層に正孔が注入され、前記第2の層から前記m番目の発光層に電子が注入されることを特徴とする発光素子。
- 第1の電極と第2の電極との間に、第1の発光層及び第2の発光層を有し、
前記第1の発光層上に電子輸送性の物質と電子供与性の物質とを含む第2の層と、
前記第2の層上に正孔輸送性の物質とモリブデン酸化物とを含む第1の層と、
前記第1の層上に前記第2の発光層と、を有し、
前記第1の電極に接して、正孔輸送性の物質とモリブデン酸化物とを含む層を有する
ことを特徴とする発光素子。 - 請求項3において、前記第1の電極に高電圧を印加し、前記第2の電極に低電圧を印加したとき、前記第1の層から前記第2の発光層に正孔が注入され、前記第2の層から前記第1の発光層に電子が注入されることを特徴とする発光素子。
- 第1の電極と第2の電極との間に、第1の発光層、第2の発光層及び第3の発光層を有し、
前記第1の発光層と前記第2の発光層との間において、
前記第1の発光層上に電子輸送性の物質と電子供与性の物質とを含む第2の層と、
前記第2の層上に正孔輸送性の物質とモリブデン酸化物とを含む第1の層とを有し、
前記第1の層上に前記第2の発光層が設けられ、
前記第2の発光層と前記第3の発光層との間において、
前記第2の発光層上に電子輸送性の物質と電子供与性の物質とを含む第2の層と、
前記第2の層上に正孔輸送性の物質とモリブデン酸化物とを含む第1の層とを有し、
前記第1の層上に前記第3の発光層が設けられ、
前記第1の電極に接して、正孔輸送性の物質とモリブデン酸化物とを含む層を有する
ことを特徴とする発光素子。 - 請求項5において、前記第1の電極に高電圧を印加し、前記第2の電極に低電圧を印加したとき、
前記第1の発光層と前記第2の発光層との間の、前記第1の層から前記第2の発光層に正孔が注入され、前記第2の層から前記第1の発光層に電子が注入され、
前記第2の発光層と前記第3の発光層との間の、前記第1の層から前記第3の発光層に正孔が注入され、前記第2の層から前記第2の発光層に電子が注入されることを特徴とする発光素子。 - 請求項1乃至請求項6のいずれか一において、前記正孔輸送性の物質は芳香族アミン系の物質であることを特徴とする発光素子。
- 請求項1乃至請求項7のいずれか一において、前記正孔輸送性の物質はベンゼン環−窒素の結合を有する物質であることを特徴とする発光素子。
- 請求項1乃至請求項8のいずれか一において、前記電子輸送性の物質はキノリン骨格又はベンゾキノリン骨格を有する金属錯体であることを特徴とする発光素子。
- 請求項1乃至請求項9のいずれか一において、前記電子供与性の物質はアルカリ金属、アルカリ金属の酸化物、アルカリ金属の窒化物、アルカリ土類金属、アルカリ土類金属の酸化物又はアルカリ土類金属の窒化物であることを特徴とする発光素子。
- 請求項1乃至請求項10のいずれか一に記載の発光素子を含む発光装置。
- 請求項11に記載の発光装置を有する照明機器。
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US20070182318A1 (en) | 2007-08-09 |
JP2012156148A (ja) | 2012-08-16 |
JP2010192465A (ja) | 2010-09-02 |
JP2013239460A (ja) | 2013-11-28 |
CN101640254A (zh) | 2010-02-03 |
CN101640254B (zh) | 2016-01-20 |
JP2006013458A (ja) | 2006-01-12 |
JP5346880B2 (ja) | 2013-11-20 |
JP5589025B2 (ja) | 2014-09-10 |
US7598670B2 (en) | 2009-10-06 |
US20110272690A1 (en) | 2011-11-10 |
WO2005115060A1 (en) | 2005-12-01 |
KR101187402B1 (ko) | 2012-10-02 |
US20130214256A1 (en) | 2013-08-22 |
KR20070026570A (ko) | 2007-03-08 |
CN100531497C (zh) | 2009-08-19 |
KR101152947B1 (ko) | 2012-06-08 |
KR20110111548A (ko) | 2011-10-11 |
JP5640124B2 (ja) | 2014-12-10 |
US8344621B2 (en) | 2013-01-01 |
US20100033090A1 (en) | 2010-02-11 |
KR101152935B1 (ko) | 2012-06-08 |
US8922116B2 (en) | 2014-12-30 |
US7940002B2 (en) | 2011-05-10 |
CN101023708A (zh) | 2007-08-22 |
KR20100055546A (ko) | 2010-05-26 |
CN101640216A (zh) | 2010-02-03 |
CN101640216B (zh) | 2011-09-28 |
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