JP4664670B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4664670B2
JP4664670B2 JP2004373405A JP2004373405A JP4664670B2 JP 4664670 B2 JP4664670 B2 JP 4664670B2 JP 2004373405 A JP2004373405 A JP 2004373405A JP 2004373405 A JP2004373405 A JP 2004373405A JP 4664670 B2 JP4664670 B2 JP 4664670B2
Authority
JP
Japan
Prior art keywords
metal
bottom plate
envelope
semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004373405A
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English (en)
Japanese (ja)
Other versions
JP2006179791A5 (https=
JP2006179791A (ja
Inventor
大広 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004373405A priority Critical patent/JP4664670B2/ja
Priority to US11/315,488 priority patent/US7586194B2/en
Publication of JP2006179791A publication Critical patent/JP2006179791A/ja
Publication of JP2006179791A5 publication Critical patent/JP2006179791A5/ja
Application granted granted Critical
Publication of JP4664670B2 publication Critical patent/JP4664670B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2004373405A 2004-12-24 2004-12-24 半導体装置 Expired - Fee Related JP4664670B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004373405A JP4664670B2 (ja) 2004-12-24 2004-12-24 半導体装置
US11/315,488 US7586194B2 (en) 2004-12-24 2005-12-23 Semiconductor device having exposed heat dissipating metal plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004373405A JP4664670B2 (ja) 2004-12-24 2004-12-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2006179791A JP2006179791A (ja) 2006-07-06
JP2006179791A5 JP2006179791A5 (https=) 2007-06-14
JP4664670B2 true JP4664670B2 (ja) 2011-04-06

Family

ID=36610508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004373405A Expired - Fee Related JP4664670B2 (ja) 2004-12-24 2004-12-24 半導体装置

Country Status (2)

Country Link
US (1) US7586194B2 (https=)
JP (1) JP4664670B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101991259B1 (ko) * 2012-12-12 2019-06-24 한국전자통신연구원 고전력 소자용 패키지
JP6193784B2 (ja) * 2014-02-26 2017-09-06 京セラ株式会社 撮像素子実装用基板及び撮像装置
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
US11444588B2 (en) * 2018-11-19 2022-09-13 Illinois Tool Works Inc. Copper wire bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking
US11706852B2 (en) * 2018-11-19 2023-07-18 Illinois Tool Works Inc. Ribbon bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking
WO2022086187A1 (ko) * 2020-10-21 2022-04-28 주식회사 케이엠더블유 전력 증폭 장치 및 그것의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124555A (ja) * 1986-11-14 1988-05-28 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS6431444A (en) * 1987-07-28 1989-02-01 Hitachi Cable Porcelain substrate for surface mounting
DE69232912T2 (de) * 1991-11-28 2003-12-24 Kabushiki Kaisha Toshiba, Kawasaki Halbleitergehäuse
JPH07307416A (ja) * 1994-05-12 1995-11-21 Toshiba Corp 半導体チップの実装方法及び半導体デバイス
JP2765621B2 (ja) * 1995-07-31 1998-06-18 日本電気株式会社 半導体装置用パッケージ
JPH09107050A (ja) * 1995-10-12 1997-04-22 Nissan Motor Co Ltd 半導体装置の実装構造
JP3398556B2 (ja) * 1997-01-10 2003-04-21 株式会社三井ハイテック 半導体装置の製造方法
JP2000349088A (ja) 1999-06-09 2000-12-15 Toshiba Corp 半導体装置及びその製造方法
JP3500335B2 (ja) * 1999-09-17 2004-02-23 株式会社東芝 高周波回路装置
JP2001319992A (ja) * 2000-02-28 2001-11-16 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びそれらの製造方法
JP4574295B2 (ja) 2003-09-19 2010-11-04 株式会社半導体エネルギー研究所 発光装置の作製方法

Also Published As

Publication number Publication date
US7586194B2 (en) 2009-09-08
US20060138654A1 (en) 2006-06-29
JP2006179791A (ja) 2006-07-06

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