JP6748223B2 - 半導体パッケージおよび半導体装置 - Google Patents
半導体パッケージおよび半導体装置 Download PDFInfo
- Publication number
- JP6748223B2 JP6748223B2 JP2018552455A JP2018552455A JP6748223B2 JP 6748223 B2 JP6748223 B2 JP 6748223B2 JP 2018552455 A JP2018552455 A JP 2018552455A JP 2018552455 A JP2018552455 A JP 2018552455A JP 6748223 B2 JP6748223 B2 JP 6748223B2
- Authority
- JP
- Japan
- Prior art keywords
- frame body
- metal substrate
- semiconductor package
- convex portion
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 119
- 229910052751 metal Inorganic materials 0.000 claims description 115
- 239000002184 metal Substances 0.000 claims description 115
- 239000000758 substrate Substances 0.000 claims description 113
- 239000000463 material Substances 0.000 claims description 24
- 239000007769 metal material Substances 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005555 metalworking Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図1は、本発明の一実施形態に係る半導体パッケージの上面からの斜視図である。図2は、本発明の一実施形態に係る半導体パッケージを示す下面からの斜視図である。図3は、本発明の一実施形態に係る半導体パッケージを示す上面平面図である。図4は、本発明の一実施形態に係る半導体パッケージを示す側面図である。図5は、図3に示した本発明の一実施形態に係る半導体パッケージにおけるA−A線での断面図である。図6は、図3に示した本発明の一実施形態に係る半導体パッケージにおけるB−B線での断面図である。また、図7は、本発明の一実施形態に係る半導体パッケージを示す上面からの分解斜視図であり、図8は、本発明の一実施形態に係る半導体パッケージを示す下面からの分解斜視図である。また、図9は、本発明の他の実施形態係る半導体パッケージを示す上面からの斜視図である。そして、図10は、本発明の他の実施形態に係る半導体パッケージを示す上面からの平面図である。これらの図において、本発明の実施形態に係る半導体パッケージ1は、金属基板2と、第1枠体3と、第2枠体4とを備えている。金属基板2は、凸部22を有している。
金属基板2は、例えば金属材料から成る場合には、銅からなる。また、金属基板2の下面に矩形状に凸部22が加工されて設けられる。このとき、金属材料のインゴットに圧延加工法、打ち抜き加工法、プレス加工、切削加工のような金属加工法を施すことによって金属基板2を構成する金属部材を作製することができる。
次に、本発明の一実施形態に係る半導体装置10について、図面を用いて詳細に説明する。図11は、本発明の一実施形態に係る半導体装置10を示す上面からの斜視図である。図11に示すように、本実施形態の一実施形態に係る半導体装置10は、上述した実施形態に代表される半導体パッケージ1と、半導体パッケージ1の実装領域21に実装された半導体素子7と、第1枠体3と接合された、半導体素子7を封止する蓋体6とを備えている。
2 金属基板
21 実装領域
22 凸部
3 第1枠体
4 第2枠体
5 リード端子
6 蓋体
7 半導体素子
10 半導体装置
Claims (8)
- 上面に半導体素子が実装される実装領域を有する金属基板と、
前記金属基板の上面に前記実装領域を囲んで位置した第1枠体と、
前記金属基板の下面に前記第1枠体と重なって位置した第2枠体とを備えており、
前記金属基板は下面に張り出した凸部を有しており、前記凸部の側面は前記第2枠体の内壁と接触しているとともに、前記凸部の下面は前記第2枠体よりも下方に位置しており、前記第2枠体の内壁と接触した前記凸部の厚みは、前記第1枠体と前記第2枠体とに挟まれた前記金属基板の厚みよりも厚いことを特徴とする半導体パッケージ。 - 上面に半導体素子が実装される実装領域を有する金属基板と、
前記金属基板の上面に前記実装領域を囲んで位置した第1枠体と、
前記金属基板の下面に前記第1枠体と重なって位置した第2枠体とを備えており、
前記金属基板は下面に張り出した凸部を有しており、前記凸部の側面は前記第2枠体の内壁と対向しているとともに、前記凸部の下面は前記第2枠体よりも下方に位置しており、前記凸部の側面は、前記第2枠体の内壁と間が空いている箇所を有していることを特徴とする半導体パッケージ。 - 前記第1枠体と前記第2枠体とは同じ材料からなることを特徴とする請求項1または2に記載の半導体パッケージ。
- 前記第1枠体と前記第2枠体とは異なる材料からなることを特徴とする請求項1または2に記載の半導体パッケージ。
- 前記凸部の側面は、前記第2枠体の内壁と間が空いている箇所を有していることを特徴とする請求項1に記載の半導体パッケージ。
- 前記凸部の側面と、前記第2枠体の内壁との間には接合材が位置しており、前記凸部の側面は、前記第2枠体の内壁と接合されていることを特徴とする請求項2または5に記載の半導体パッケージ。
- 前記第1枠体の上面にはリード端子が設けられており、
平面視において、前記金属基板の外縁は、前記第1枠体の外縁および前記第2枠体の外縁よりも大きいことを特徴とする請求項1〜6のいずれか1つに記載の半導体パッケージ。 - 請求項1〜7のいずれか1つに記載の半導体パッケージと、
前記半導体パッケージの前記実装領域に実装された半導体素子と、
前記半導体素子を覆うとともに、前記第1枠体の上面に設けられた蓋体とを備えていることを特徴とする半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016230125 | 2016-11-28 | ||
JP2016230125 | 2016-11-28 | ||
PCT/JP2017/036965 WO2018096826A1 (ja) | 2016-11-28 | 2017-10-12 | 半導体パッケージおよび半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018096826A1 JPWO2018096826A1 (ja) | 2019-10-17 |
JP6748223B2 true JP6748223B2 (ja) | 2020-08-26 |
Family
ID=62195442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018552455A Active JP6748223B2 (ja) | 2016-11-28 | 2017-10-12 | 半導体パッケージおよび半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10943854B2 (ja) |
EP (1) | EP3547356A4 (ja) |
JP (1) | JP6748223B2 (ja) |
CN (1) | CN110036470B (ja) |
WO (1) | WO2018096826A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116055830A (zh) * | 2021-10-27 | 2023-05-02 | 晋城三赢精密电子有限公司 | 镜头模组及电子装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4677528A (en) * | 1984-05-31 | 1987-06-30 | Motorola, Inc. | Flexible printed circuit board having integrated circuit die or the like affixed thereto |
US4763188A (en) * | 1986-08-08 | 1988-08-09 | Thomas Johnson | Packaging system for multiple semiconductor devices |
JP2603102B2 (ja) * | 1988-05-12 | 1997-04-23 | イビデン株式会社 | 電子部品搭載用基板の製造方法 |
JPH04322452A (ja) | 1991-04-23 | 1992-11-12 | Mitsubishi Electric Corp | 半導体装置、半導体素子収納容器および半導体装置の製造方法 |
JP2005277114A (ja) * | 2004-03-25 | 2005-10-06 | Sanyo Electric Co Ltd | 半導体装置 |
US7977698B2 (en) * | 2005-03-18 | 2011-07-12 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | System and method for surface mountable display |
US7944043B1 (en) * | 2008-07-08 | 2011-05-17 | Amkor Technology, Inc. | Semiconductor device having improved contact interface reliability and method therefor |
FR2951401B1 (fr) * | 2009-10-20 | 2016-12-30 | Soc De Tech Michelin | Presse de vulcanisation |
JP2012142371A (ja) | 2010-12-28 | 2012-07-26 | Mitsubishi Electric Corp | 半導体パッケージ |
KR101277202B1 (ko) | 2011-04-25 | 2013-06-20 | 주식회사 코스텍시스 | 메탈 베이스 및 그 제조 방법과 이를 이용한 소자 패키지 |
US8994157B1 (en) * | 2011-05-27 | 2015-03-31 | Scientific Components Corporation | Circuit system in a package |
US9018747B2 (en) * | 2011-08-22 | 2015-04-28 | Kyocera Corporation | Optical semiconductor apparatus |
JP5873108B2 (ja) | 2011-12-22 | 2016-03-01 | 京セラ株式会社 | 配線基板および電子装置 |
CN103515364A (zh) * | 2012-06-29 | 2014-01-15 | 三星电机株式会社 | 电源模块封装和用于制造电源模块封装的方法 |
JP5873174B2 (ja) | 2012-07-27 | 2016-03-01 | 京セラ株式会社 | 半導体素子収納用パッケージおよび半導体装置 |
KR20150053874A (ko) * | 2012-09-13 | 2015-05-19 | 후지 덴키 가부시키가이샤 | 반도체 장치, 반도체 장치에 대한 방열 부재의 부착 방법 및 반도체 장치의 제조 방법 |
CN104078556B (zh) * | 2013-03-28 | 2017-03-01 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
CN107210352B (zh) * | 2015-01-19 | 2020-08-11 | Lg 伊诺特有限公司 | 发光器件 |
KR102237155B1 (ko) * | 2015-03-11 | 2021-04-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 라이트 유닛 |
JP2016174049A (ja) * | 2015-03-16 | 2016-09-29 | 株式会社東芝 | リードフレーム構造体、リードフレーム構造体の製造方法、および半導体装置 |
US10431526B2 (en) * | 2017-10-09 | 2019-10-01 | Cree, Inc. | Rivetless lead fastening for a semiconductor package |
-
2017
- 2017-10-12 US US16/463,565 patent/US10943854B2/en active Active
- 2017-10-12 CN CN201780072612.3A patent/CN110036470B/zh active Active
- 2017-10-12 EP EP17873986.8A patent/EP3547356A4/en not_active Withdrawn
- 2017-10-12 WO PCT/JP2017/036965 patent/WO2018096826A1/ja active Application Filing
- 2017-10-12 JP JP2018552455A patent/JP6748223B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP3547356A1 (en) | 2019-10-02 |
CN110036470A (zh) | 2019-07-19 |
WO2018096826A1 (ja) | 2018-05-31 |
JPWO2018096826A1 (ja) | 2019-10-17 |
EP3547356A4 (en) | 2020-07-08 |
US10943854B2 (en) | 2021-03-09 |
US20190279923A1 (en) | 2019-09-12 |
CN110036470B (zh) | 2023-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10910326B2 (en) | Semiconductor package | |
JP6748223B2 (ja) | 半導体パッケージおよび半導体装置 | |
JP5837187B2 (ja) | 半導体素子収納用パッケージ、半導体装置および実装構造体 | |
JP6809914B2 (ja) | 半導体パッケージおよび半導体装置 | |
JP7019021B2 (ja) | 半導体パッケージ、半導体装置および半導体パッケージの製造方法 | |
JP7075810B2 (ja) | 電子部品収納用パッケージ、電子装置、および電子モジュール | |
JP2007095956A (ja) | 電子部品収納用パッケージ | |
JP2005150133A (ja) | 半導体素子収納用容器 | |
WO2019208577A1 (ja) | 放熱基板および電子装置 | |
WO2020045563A1 (ja) | 半導体パッケージおよびこれを備えた半導体装置 | |
JP7033974B2 (ja) | セラミック回路基板、パッケージおよび電子装置 | |
JP2019114639A (ja) | 半導体パッケージおよび半導体装置 | |
JP6680589B2 (ja) | 半導体素子収納用パッケージおよび半導体装置 | |
JP4332037B2 (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP6769830B2 (ja) | 半導体パッケージおよび半導体装置 | |
JP6258748B2 (ja) | 半導体素子収納用パッケージおよび半導体装置 | |
JP2021015853A (ja) | 電子モジュール及び電子装置 | |
JP2008159975A (ja) | 半導体素子収納用パッケージ及びその製造方法 | |
JP2005101376A (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP6885706B2 (ja) | 半導体素子実装用基板および半導体装置 | |
JP2005101374A (ja) | 半導体素子収納用パッケージおよび半導体装置 | |
JP5865783B2 (ja) | 電子部品収納用容器および電子装置 | |
JP2005159251A (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP5882868B2 (ja) | 圧電装置ならびに圧電装置の製造方法 | |
JP3439844B2 (ja) | 半導体素子収納用パッケージ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190516 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200625 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200707 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6748223 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |