CN104078556B - 发光二极管封装结构的制造方法 - Google Patents
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Abstract
本发明提供一种发光二极管封装结构的制造方法,包括以下步骤:提供一金属板,在所述金属板上形成若干相互绝缘的电极板,在每相邻两电极板上电连接一发光二极管芯片;在金属板上形成若干凸起部,每一凸起部环绕一发光二极管芯片并形成容置发光二极管芯片的凹陷部;在凸起部下方形成覆盖电极板的基板;形成封装层于凹陷部内;以及切割基板形成若干个发光二极管封装结构。采用上述方法可易于制造尺寸较小的发光二极管封装结构。
Description
技术领域
本发明涉及一种半导体的制造方法,尤其涉及一种发光二极管封装结构的制造方法。
背景技术
相比于传统的发光源,发光二极管(Light Emitting Diode,LED)具有重量轻、体积小、污染低、寿命长等优点,其作为一种新型的发光源,已经被越来越多地应用到各领域当中,如路灯、交通灯、信号灯、射灯及装饰灯等。
为了适应现有发光设备(例如显示器等)日益微型化的趋势,作为新一代光源的发光二极管封装结构也被要求能够向日益微型化的趋势发展。然而一般的发光二极管封装结构通常包括基板、在该基板上形成的金属层及承载于基板上并与金属层电连接的发光二极管芯片。并且,为了增强发光二极管封装结构的发出光线的会聚效率,通常在基板上还形成反射杯,该种发光二极管封装结构在体积尺寸上可缩减的空间较小,因此通常无法满足当今产业微型化的趋势。
发明内容
有鉴于此,有必要提供一种微型化的发光二极管封装结构的制造方法。
一种发光二极管封装结构的制造方法,包括以下步骤:
提供一金属板,在所述金属板上形成若干相互绝缘的电极板,在每相邻两电极板上电连接一发光二极管芯片;
在金属板上形成若干凸起部,每一凸起部环绕一发光二极管芯片并形成容置发光二极管芯片的凹陷部;
在凸起部下方形成覆盖电极板的基板;
形成封装层于凹陷部内;以及
切割基板形成若干个发光二极管封装结构。
本发明采用先在电极板上连接发光二极管芯片,再将电极板冲压形成多个环绕发光二极管芯片的凸起部,然后再形成包覆电极板的基板,能够尽可能的减小发光二极管封装结构的体积,能够通过控制凸起部的形成位置从而控制发光二极管封装结构的宽度,通过控制基板的厚度以及凸起部的高度来从而控制发光二极管封装结构的厚度,从而利于体积较小的发光二极管封装结构的制造。并且,由于发光二极管芯片是收容于金属板的凹陷部内的,因此金属板本身就可充当反射结构使用,无需再在基板或金属板上再形成反射杯,从而使发光二极管封装结构的厚度较小。
下面参照附图,结合具体实施方式对本发明作进一步的描述。
附图说明
图1为本发明实施方式的发光二极管封装结构的制造方法制成的发光二极管封装结构的剖视示意图。
图2至图8为本发明实施方式的发光二极管封装结构的制造过程中各步骤示意图。
主要元件符号说明
发光二极管封装结构 100
基板 10
上表面 11
下表面 12
电极板 20
第一电极板 21
第二电极板 22
绝缘带 23
凹陷部 24
凸起部 25
发光二极管芯片 30
封装层 40
金属板 50
模具 60
下模 61
凸块 611
上模 62
凹槽 621
容置口 622
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
如图1所示,本发明实施方式提供的发光二极管封装结构100包括基板10、形成于基板10内的两电极板20、承载于两电极板20上并与两电极板20电性连接的发光二极管芯片30,以及封装该发光二极管芯片30的封装层40。
所述基板10包括上表面11和相对设置的下表面12。所述电极板20分为第一电极板21和第二电极板22。该第一、第二电极板21、22之间夹设一绝缘带23,以使第一、第二电极板21、22相互绝缘。该电极板20在基板10的中央与基板10的下表面12齐平并形成一凹陷部24,电极板20自凹陷部24的外边缘向上延伸至基板10的上表面11从而形成一凸起部25,该凸起部25环绕凹陷部24。所述发光二极管芯片30容置于该凹陷部24中,并与第一、第二电极板21、22电连接。在本实施方式中,该发光二极管芯片30是采用覆晶方式连接于电极板20上。电极板20还可自凸起部25的外围进一步向基板10的下表面12延伸,并自基板10的下表面12向基板10的侧面水平延伸,从而从基板10的侧面外露。所述电极板20上直接形成凸起部25,不但作为发光二极管封装结构100的电极使用,还可以作为反射杯使用,能够使发光二极管封装结构100在尺寸上有所缩减。
所述封装层40填充于电极板20的凹陷部24中,并将发光二极管芯片30覆盖。该封装层40的上表面与基板10的上表面11平齐,从而使该发光二极管封装结构100整体呈平板状,并具有较小的厚度。
本发明还提供上述发光二极管封装结构100的制造方法,以下,将结合其他附图对该制造方法进行详细说明。
请参考图2,提供一平板状金属板50,并在金属板50上形成若干相互间隔的绝缘带23,从而使该金属板50分隔成若干相互绝缘的电极板20,在每相邻两电极板20上电连接一发光二极管芯片30。
请参阅图3至图5,提供一模具60将金属板50夹设其中,在金属板50上冲压出若干凸起部25,每一凸起部25环绕一发光二极管芯片30并形成容置发光二极管芯片30的凹陷部24。该模具60包括一下模61和一上模62。下模61的上表面间隔设有若干凸块611,上模62的下表面对应下模61的凸块611处形成有若干凹槽621,该凸块611凸起的高度与凹槽621凹陷的深度大致相等。上模62的下表面对应每一发光二极管芯片30形成有若干容置口622,该容置口622为自上模62的下表面向内凹陷形成的另一组凹槽,该容置口622的深度大于电极板20上的发光二极管芯片30装设的高度,以使上模62和下模61相互冲压时,避免上模62与发光二极管芯片30接触,以防止将发光二极管芯片30压坏。操作时,将金属板50放置于下模61和上模62之间,并将每一凸块611和凹槽621面对金属板50且一一对应放置;向相对方向移动下模61和上模62,从而使下模61的凸块611将金属板50向上冲压至上模62的凹槽621中进而形成凸起部25;最后再移除模具60。
请参阅图6,形成覆盖电极板20的基板10。在该步骤中,可采用压模的方式将高分子材料从电极板20的上方和下方压合,从而使高分子材料填充于电极板20的凸起部25的下方,同时填充于相邻两发光二极管芯片30的相邻两凸起部25之间。该基板10包括上表面11和下表面12,该上表面11与电极板20的凸起部25的顶面相平齐,从而使凸起部25裸露于顶面,以便电极板20可以从顶部与其他元件电性连接。该下表面12与电极板20的凹陷部24的底面相平齐,从而使凹陷部24裸露于底面,以便电极板20可以从底部与其他元件电性连接。此种结构不但能尽可能的减小封装结构的厚度尺寸,还能够使该封装结构连入电路的方式多样化,提高该结构在运用时的灵活性和可调性。当然,在其他实施方式中,所述基板10可将电极板20的凸起部25的上表面和凹陷部24的下表面完全包覆于内,仅使电极板20从基板10的侧面伸出,从而使电极板20的侧面可以与其他元件电性连接。
请参阅图7,形成封装层40于凹陷部24内。该封装层40内可包含荧光粉。该封装层40的上表面可以与基板10的上表面相平齐,从而使整个封装结构呈薄型平板状。
请参阅图8,切割基板10以形成多个发光二极管封装结构100,如图1所示。在该步骤中,可沿相邻两发光二极管芯片30的相邻两凸起部25之间的区域进行切割,从而使每一发光二极管封装结构100均包括环绕一发光二极管芯片30的凸起部25。此外,由于凸起部25的材料为金属,因此环绕每一发光二极管芯片30的凸起部25的内壁具有较高的光反射特性,可提高发光二极管封装结构100的出光效率。
本发明采用先在电极板20上连接发光二极管芯片30,再将电极板20冲压形成多个环绕发光二极管芯片30的凸起部25,然后再形成包覆电极板20的基板10,能够尽可能的减小发光二极管封装结构100的体积,能够通过控制凸起部25的形成位置从而控制发光二极管封装结构100的宽度,通过控制基板10的厚度以及凸起部25的高度来从而控制发光二极管封装结构100的厚度。且由于凸起部25为金属材质,其环绕发光二极管芯片30设置,能够有效的反射发光二极管芯片30发出的光线,提高发光二极管封装结构100的出光效率。另外,由于发光二极管芯片30是直接装设在冲压前的电极板20上,因此在平板状的电极板20上进行发光二极管芯片30的固晶打线或覆晶操作具有较大的操作空间,避免了因为操作空间狭小(例如在反射杯内固晶操作)而对操作更为苛刻以及容易产生不良品的缺失。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种发光二极管封装结构的制造方法,包括以下步骤:
提供一金属板,在所述金属板上形成若干相互间隔的绝缘带,从而使该金属板分隔成若干相互绝缘的电极板,在每相邻两电极板上电连接一发光二极管芯片;
在金属板上冲压出若干凸起部,每一凸起部环绕一发光二极管芯片并形成容置发光二极管芯片的凹陷部;
在凸起部下方及相邻两发光二极管芯片的相邻两凸起部之间形成覆盖电极板的基板;
形成封装层于凹陷部内;以及
切割基板形成若干个发光二极管封装结构。
2.如权利要求1所述的发光二极管封装结构的制造方法,其特征在于:所述在金属板上冲压出若干凸起部的步骤包括以下步骤:
提供一模具,所述模具包括下模和上模,所述下模的上表面形成若干凸块,所述上模的下表面形成若干凹槽,所述凸块和凹槽一一对应;
将金属板夹设于上模和下模中;
上模和下模相互冲压金属板形成若干凸起部;以及
移除模具。
3.如权利要求2所述的发光二极管封装结构的制造方法,其特征在于:所述上模的下表面还形成有若干容置口,每一容置口与每一发光二极管芯片一一对应,每一容置口的深度大于发光二极管芯片装设的高度。
4.如权利要求1所述的发光二极管封装结构的制造方法,其特征在于:所述形成覆盖电极板的基板的步骤是采用压模的方式将高分子材料填充于电极板的凸起部内以及相邻两发光二极管芯片的相邻两凸起部之间。
5.如权利要求4所述的发光二极管封装结构的制造方法,其特征在于:所述基板包括上表面,所述上表面与电极板的凸起部的顶面平齐。
6.如权利要求4所述的发光二极管封装结构的制造方法,其特征在于:所述基板包括下表面,所述下表面与电极板的凹陷部的底面平齐。
7.如权利要求1所述的发光二极管封装结构的制造方法,其特征在于:所述基板包括上表面和下表面,所述上表面和下表面将电极板的凸起部的顶面和凹陷部的底面包覆于内。
8.如权利要求1所述的发光二极管封装结构的制造方法,其特征在于:所述形成封装层于凹陷部内的步骤中封装层与基板的上表面平齐。
9.如权利要求8所述的发光二极管封装结构的制造方法,其特征在于:所述封装层内包括荧光粉。
10.如权利要求1所述的发光二极管封装结构的制造方法,其特征在于:所述切割基板形成若干个发光二极管封装结构的步骤是沿相邻两发光二极管芯片的相邻两凸起部之间的区域进行切割。
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