JP4663139B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4663139B2
JP4663139B2 JP2001041028A JP2001041028A JP4663139B2 JP 4663139 B2 JP4663139 B2 JP 4663139B2 JP 2001041028 A JP2001041028 A JP 2001041028A JP 2001041028 A JP2001041028 A JP 2001041028A JP 4663139 B2 JP4663139 B2 JP 4663139B2
Authority
JP
Japan
Prior art keywords
insulating film
film
tft
hydrogen
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001041028A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002246602A5 (enExample
JP2002246602A (ja
Inventor
敦生 磯部
徹 高山
達也 荒尾
昭彦 高良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001041028A priority Critical patent/JP4663139B2/ja
Priority to US10/071,211 priority patent/US6620658B2/en
Publication of JP2002246602A publication Critical patent/JP2002246602A/ja
Publication of JP2002246602A5 publication Critical patent/JP2002246602A5/ja
Application granted granted Critical
Publication of JP4663139B2 publication Critical patent/JP4663139B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2001041028A 2001-02-16 2001-02-16 半導体装置の作製方法 Expired - Fee Related JP4663139B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001041028A JP4663139B2 (ja) 2001-02-16 2001-02-16 半導体装置の作製方法
US10/071,211 US6620658B2 (en) 2001-02-16 2002-02-11 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001041028A JP4663139B2 (ja) 2001-02-16 2001-02-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002246602A JP2002246602A (ja) 2002-08-30
JP2002246602A5 JP2002246602A5 (enExample) 2008-01-31
JP4663139B2 true JP4663139B2 (ja) 2011-03-30

Family

ID=18903529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001041028A Expired - Fee Related JP4663139B2 (ja) 2001-02-16 2001-02-16 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US6620658B2 (enExample)
JP (1) JP4663139B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI288443B (en) * 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
JP2004071696A (ja) * 2002-08-02 2004-03-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US7605023B2 (en) * 2002-08-29 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device and heat treatment method therefor
JP4627961B2 (ja) * 2002-09-20 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1563480A4 (en) * 2002-09-30 2010-03-03 Nanosys Inc INTEGRATED ADS WITH NANOWIRE TRANSISTORS
US7300829B2 (en) * 2003-06-02 2007-11-27 Applied Materials, Inc. Low temperature process for TFT fabrication
KR100623229B1 (ko) 2003-11-29 2006-09-18 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그의 제조 방법
KR100612868B1 (ko) * 2004-11-08 2006-08-14 삼성전자주식회사 실리콘 필름 제조방법
KR100731745B1 (ko) 2005-06-22 2007-06-22 삼성에스디아이 주식회사 유기전계발광표시장치 및 그 제조방법
JP4992232B2 (ja) * 2005-11-30 2012-08-08 凸版印刷株式会社 薄膜トランジスタ及びその製造方法及び成膜装置
JP5616038B2 (ja) 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2010245366A (ja) 2009-04-08 2010-10-28 Fujifilm Corp 電子素子及びその製造方法、並びに表示装置
EP2428994A1 (en) * 2010-09-10 2012-03-14 Applied Materials, Inc. Method and system for depositing a thin-film transistor
US20130300978A1 (en) * 2012-05-14 2013-11-14 Apple Inc. Display with Minimized Light Leakage
CN110828486B (zh) * 2019-11-19 2023-05-12 云谷（固安）科技有限公司 显示面板的制作方法和显示面板

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03241874A (ja) * 1990-02-20 1991-10-29 Seiko Epson Corp 薄膜半導体装置の製造方法
TW237562B (enExample) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
CN1052566C (zh) 1993-11-05 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
JP3468848B2 (ja) * 1994-06-09 2003-11-17 株式会社半導体エネルギー研究所 薄膜トランジスタおよびその作製方法、並びに液晶表示装置およびその作製方法
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JP2652368B2 (ja) * 1996-04-05 1997-09-10 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JPH1084085A (ja) 1996-09-09 1998-03-31 Matsushita Electron Corp 半導体装置およびその製造方法
US6277679B1 (en) * 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
TW517260B (en) 1999-05-15 2003-01-11 Semiconductor Energy Lab Semiconductor device and method for its fabrication
CN100352022C (zh) 1999-12-10 2007-11-28 株式会社半导体能源研究所 半导体器件及其制造方法
US6639265B2 (en) 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
JP2001250956A (ja) 2000-03-08 2001-09-14 Semiconductor Energy Lab Co Ltd 半導体装置
US7503975B2 (en) 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
TW545080B (en) 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US6893887B2 (en) 2001-01-18 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Process for producing a light emitting device
SG107573A1 (en) 2001-01-29 2004-12-29 Semiconductor Energy Lab Light emitting device
SG143945A1 (en) 2001-02-19 2008-07-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
US20020160554A1 (en) 2002-10-31
US6620658B2 (en) 2003-09-16
JP2002246602A (ja) 2002-08-30

Similar Documents

Publication Publication Date Title
KR100816270B1 (ko) 전기광학 디바이스 및 이를 제조하는 방법
JP5708910B2 (ja) 薄膜トランジスタおよびその製造方法、並びに表示装置
JP4663139B2 (ja) 半導体装置の作製方法
US8324032B2 (en) Method of manufacturing a semiconductor device
JP4678933B2 (ja) 半導体装置の作製方法
US11283039B2 (en) Display substrate with improved carrier mobility of thin film transistors within GOA region
JP2003273361A (ja) 半導体装置およびその製造方法
TW201030924A (en) Display device and method for manufacturing the same
JP2001036019A (ja) コンデンサ及び半導体装置並びにそれらの作製方法
JP4641582B2 (ja) 半導体装置の作製方法
JP2000349298A (ja) 電気光学装置およびその作製方法
JP4993826B2 (ja) 半導体装置の作製方法
JP4683696B2 (ja) 半導体装置の作製方法
JP6291015B2 (ja) 半導体装置
JP3961310B2 (ja) 半導体装置の作製方法
CN101478004B (zh) 薄膜晶体管、半导体装置及电子设备
JP4850763B2 (ja) 半導体装置の作製方法
JP5577384B2 (ja) 半導体装置の作製方法
JP4986347B2 (ja) 半導体装置の作製方法
JP4583654B2 (ja) 半導体装置の作製方法
JP4712155B2 (ja) 半導体装置の作製方法
CN111785734A (zh) 一种背板系统
JP2002222954A (ja) 電気光学装置およびその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071205

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071205

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101221

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101222

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110105

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140114

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees