JP4642340B2 - 誘電膜工程を単純化して半導体素子のキャパシタを製造する方法及びその誘電膜を形成する装置 - Google Patents
誘電膜工程を単純化して半導体素子のキャパシタを製造する方法及びその誘電膜を形成する装置 Download PDFInfo
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- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 10
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910019899 RuO Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
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- 238000011065 in-situ storage Methods 0.000 claims description 3
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- 238000011068 loading method Methods 0.000 claims description 2
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- 230000008901 benefit Effects 0.000 description 4
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- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 3
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- -1 2-methoxyethoxy Chemical group 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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Description
一般的に知られたCVD工程は、ソースガスに反応ガスを加えて反応させる方法である。図10は、150Å厚さのTa2O5誘電膜をCVDで蒸着し、キュアリングしない時、反応ガスなしにソースガスだけで誘電膜を蒸着した場合の結果を示すグラフである。
120 第1誘電膜、
130 キュアリング、
140 第2誘電膜、
150 第2電極。
Claims (20)
- 半導体基板上に第1電極を形成する段階と、
前記第1電極上に第1誘電膜を蒸着する段階と、
前記第1誘電膜を酸素含有雰囲気でキュアリングする段階と、
前記キュアリングされた第1誘電膜上に反応ガスなしにソースガスだけで第2誘電膜を蒸着する段階と、
前記第2誘電膜に対するキュアリングなしに前記第2誘電膜上に第2電極を形成する段階と、を含むことを特徴とする半導体素子のキャパシタ製造方法。 - 前記第1誘電膜は、反応ガスなしにソースガスだけで蒸着することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記第1誘電膜と第2誘電膜とは、CVD法によって蒸着することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記第1誘電膜と第2誘電膜とは、ALD法によって蒸着することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記ソースガスとして酸素原子を含むソースガスを使用することを特徴とする請求項1または2に記載の半導体素子のキャパシタ製造方法。
- 前記第1誘電膜と第2誘電膜とは、100〜600℃の温度範囲で蒸着することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記第1誘電膜の厚さは5〜200Åに蒸着し、第2誘電膜の厚さは5〜3000Åに蒸着することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記ソースガスとしてはTa(OC2H5)5、TET−DMAE、Ta(OsBu)5、Ta(OC2H5)4(acacC2H5)、TaCl2(OC2H5)2C5H7O2またはTa(OCH3)5を使用することを特徴とする請求項1または2に記載の半導体素子のキャパシタ製造方法。
- 前記第1誘電膜は、Ta2O5をCVD法によって蒸着することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記第2誘電膜は、Ta2O5をCVD法によって蒸着することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記第1誘電膜蒸着から第2誘電膜蒸着までを一つの誘電膜形成装置でインシチュで行うことを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記酸素含有雰囲気は、O2またはO3を含む酸化性雰囲気であることを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記酸素含有雰囲気は、O2またはN2OのECRあるいはRFプラズマ雰囲気であることを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記第1電極と第2電極とは、TiN、TaN、W、WN、Al、Cu、Ru、RuO2、Pt、Ir、IrO2、ドープトポリシリコンのうち何れか一つ、またはこれらの組合わせで形成することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記第1誘電膜と第2誘電膜とは、Ta2O5、HfO2、ZrO2、Al2O3、TiO2のうち何れか一つ、またはこれらの組合わせで形成することを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 半導体基板上に第1電極を形成する段階と、
前記第1電極上に第1Ta2O5膜を蒸着する段階と、
前記第1Ta2O5膜をO3雰囲気でキュアリングする段階と、
前記キュアリングされた第1Ta2O5膜上に反応ガスなしにTa(OC2H5)5だけで第2Ta2O5膜を蒸着する段階と、
前記第2Ta2O5膜に対するキュアリングなしに前記第2Ta2O5膜上に第2電極を形成する段階と、を含むことを特徴とする半導体素子のキャパシタ製造方法。 - 前記第1Ta2O5膜は、反応ガスなしにTa(OC2H5)5だけで蒸着することを特徴とする請求項16に記載の半導体素子のキャパシタ製造方法。
- 前記第1Ta2O5膜と第2Ta2O5膜とは、CVD法によって蒸着することを特徴とする請求項16に記載の半導体素子のキャパシタ製造方法。
- 複数の半導体基板がローディングされたカセットが位置するロードロックチャンバと、
前記ロードロックチャンバに連結されて前記半導体基板をローディング及びアンローディングできるロボットアームを備えるトランスファチャンバと、
前記トランスファチャンバに連結されており、誘電膜を蒸着できる第1誘電膜蒸着チャンバと、
前記第1誘電膜蒸着チャンバに連結されたキュアリングチャンバと、
前記トランスファチャンバに連結されており、誘電膜を蒸着できる第2誘電膜蒸着チャンバと、を含み、
前記第1誘電膜蒸着チャンバで蒸着した第1誘電膜を前記キュアリングチャンバでキュアリングした後、前記第2誘電膜蒸着チャンバで第2誘電膜蒸着を行えることを特徴とする、請求項1または請求項16に記載の半導体素子のキャパシタ製造方法に用いられる誘電膜形成装置。 - 前記第1及び第2誘電膜蒸着チャンバは、反応ガスなしにソースガスだけで誘電膜を蒸着することを特徴とする請求項19に記載の誘電膜形成装置。
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