JP4640899B2 - Ｉｉｉ族窒化物結晶成長装置 - Google Patents

Ｉｉｉ族窒化物結晶成長装置 Download PDF

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Publication number
JP4640899B2
JP4640899B2 JP2001195954A JP2001195954A JP4640899B2 JP 4640899 B2 JP4640899 B2 JP 4640899B2 JP 2001195954 A JP2001195954 A JP 2001195954A JP 2001195954 A JP2001195954 A JP 2001195954A JP 4640899 B2 JP4640899 B2 JP 4640899B2
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Japan
Prior art keywords
group iii
raw material
iii raw
reaction vessel
pump
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Expired - Fee Related
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JP2001195954A
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English (en)
Japanese (ja)
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JP2003012400A (ja
JP2003012400A5 (enExample
Inventor
正二 皿山
久典 山根
昌彦 島田
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Ricoh Co Ltd
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Ricoh Co Ltd
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Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP2001195954A priority Critical patent/JP4640899B2/ja
Priority to US10/134,895 priority patent/US7001457B2/en
Publication of JP2003012400A publication Critical patent/JP2003012400A/ja
Priority to US11/302,128 priority patent/US7531038B2/en
Publication of JP2003012400A5 publication Critical patent/JP2003012400A5/ja
Priority to US12/353,608 priority patent/US8623138B2/en
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Publication of JP4640899B2 publication Critical patent/JP4640899B2/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2001195954A 2001-05-01 2001-06-28 Ｉｉｉ族窒化物結晶成長装置 Expired - Fee Related JP4640899B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001195954A JP4640899B2 (ja) 2001-06-28 2001-06-28 Ｉｉｉ族窒化物結晶成長装置
US10/134,895 US7001457B2 (en) 2001-05-01 2002-04-30 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US11/302,128 US7531038B2 (en) 2001-05-01 2005-12-14 Crystal growth method
US12/353,608 US8623138B2 (en) 2001-05-01 2009-01-14 Crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001195954A JP4640899B2 (ja) 2001-06-28 2001-06-28 Ｉｉｉ族窒化物結晶成長装置

Publications (3)

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JP2003012400A JP2003012400A (ja) 2003-01-15
JP2003012400A5 JP2003012400A5 (enExample) 2006-10-19
JP4640899B2 true JP4640899B2 (ja) 2011-03-02

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JP2001195954A Expired - Fee Related JP4640899B2 (ja) 2001-05-01 2001-06-28 Ｉｉｉ族窒化物結晶成長装置

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JP (1) JP4640899B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP4049723B2 (ja) 2003-09-04 2008-02-20 沖電気工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子の製造装置
JP4522836B2 (ja) * 2004-12-08 2010-08-11 株式会社リコー Ｉｉｉ族窒化物結晶製造方法及びｉｉｉ族窒化物結晶成長装置
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
TW200706710A (en) 2005-05-12 2007-02-16 Ricoh Co Ltd Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP2010254495A (ja) * 2009-04-22 2010-11-11 Ihi Corp 基板製造装置
KR102673843B1 (ko) * 2021-08-30 2024-06-11 에임즈마이크론 주식회사 수위 조절식 갈륨 메탈 보트를 구비한 질화갈륨 단결정 레이어 제조 장치
KR102489127B1 (ko) * 2021-11-10 2023-01-13 신정훈 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비
WO2024111688A1 (ko) * 2022-11-22 2024-05-30 신정훈 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비
KR102774123B1 (ko) 2023-06-02 2025-03-04 주식회사 비투지홀딩스 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비의 갈륨 공급 장치 및 이를 포함하는 하이드라이드 기상 증착 장비
KR102805527B1 (ko) 2023-06-28 2025-05-12 주식회사 비투지홀딩스 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비의 부산물 처리 장치 및 이를 포함하는 하이드라이드 기상 증착 장비
KR20250016978A (ko) 2023-07-26 2025-02-04 주식회사 비투지 Ⅲ족 원소 질화물의 성장을 위한 hvpe 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH062518B2 (ja) * 1984-04-26 1994-01-12 株式会社島津製作所 流体クロマトグラフ用定量送液装置
JP3929657B2 (ja) * 1999-09-29 2007-06-13 株式会社リコー 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法
JP2001009016A (ja) * 1999-06-30 2001-01-16 Toshiba Lighting & Technology Corp 光触媒清浄ユニットおよび空気清浄機ならびに発光ダイオード

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