JP4637975B2 - フォトダイオード、フォトセル、画像センサｉｃ及び画像捕捉システム - Google Patents

フォトダイオード、フォトセル、画像センサｉｃ及び画像捕捉システム Download PDF

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Publication number
JP4637975B2
JP4637975B2 JP50282099A JP50282099A JP4637975B2 JP 4637975 B2 JP4637975 B2 JP 4637975B2 JP 50282099 A JP50282099 A JP 50282099A JP 50282099 A JP50282099 A JP 50282099A JP 4637975 B2 JP4637975 B2 JP 4637975B2
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well
photodiode
region
substrate
conductivity type
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Expired - Fee Related
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JP50282099A
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Japanese (ja)
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JP2002505035A5 (https=
JP2002505035A (ja
Inventor
マクダニエル，バート
ベイリイ，マーク・エイ
クラーク，ローレンス・ティ
ホフマン，エリック・ジェイ
ボーオレック，エドワード・ジェイ
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Intel Corp
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Intel Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
JP50282099A 1997-06-12 1998-06-03 フォトダイオード、フォトセル、画像センサｉｃ及び画像捕捉システム Expired - Fee Related JP4637975B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/873,987 1997-06-12
US08/873,987 US6040592A (en) 1997-06-12 1997-06-12 Well to substrate photodiode for use in a CMOS sensor on a salicide process
PCT/US1998/011432 WO1998057369A1 (en) 1997-06-12 1998-06-03 A well to substrate photodiode for use in a cmos sensor on a salicide process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010053848A Division JP2010183089A (ja) 1997-06-12 2010-03-10 サリサイド・プロセスに基づくｃｍｏｓセンサ中で使用するウエル−基板フォトダイオード

Publications (3)

Publication Number Publication Date
JP2002505035A JP2002505035A (ja) 2002-02-12
JP2002505035A5 JP2002505035A5 (https=) 2005-12-08
JP4637975B2 true JP4637975B2 (ja) 2011-02-23

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP50282099A Expired - Fee Related JP4637975B2 (ja) 1997-06-12 1998-06-03 フォトダイオード、フォトセル、画像センサｉｃ及び画像捕捉システム
JP2010053848A Pending JP2010183089A (ja) 1997-06-12 2010-03-10 サリサイド・プロセスに基づくｃｍｏｓセンサ中で使用するウエル−基板フォトダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010053848A Pending JP2010183089A (ja) 1997-06-12 2010-03-10 サリサイド・プロセスに基づくｃｍｏｓセンサ中で使用するウエル−基板フォトダイオード

Country Status (5)

Country Link
US (1) US6040592A (https=)
EP (1) EP1004140B1 (https=)
JP (2) JP4637975B2 (https=)
AU (1) AU7722298A (https=)
WO (1) WO1998057369A1 (https=)

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Also Published As

Publication number Publication date
EP1004140A1 (en) 2000-05-31
US6040592A (en) 2000-03-21
JP2010183089A (ja) 2010-08-19
AU7722298A (en) 1998-12-30
JP2002505035A (ja) 2002-02-12
WO1998057369A1 (en) 1998-12-17
EP1004140B1 (en) 2007-12-19
EP1004140A4 (en) 2000-09-20

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