AU7722298A - A well to substrate photodiode for use in a cmos sensor on salicide process - Google Patents

A well to substrate photodiode for use in a cmos sensor on salicide process

Info

Publication number
AU7722298A
AU7722298A AU77222/98A AU7722298A AU7722298A AU 7722298 A AU7722298 A AU 7722298A AU 77222/98 A AU77222/98 A AU 77222/98A AU 7722298 A AU7722298 A AU 7722298A AU 7722298 A AU7722298 A AU 7722298A
Authority
AU
Australia
Prior art keywords
well
cmos sensor
salicide process
substrate photodiode
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU77222/98A
Other languages
English (en)
Inventor
Edward J. Bawolek
Mark A. Beiley
Lawrence T. Clark
Eric J. Hoffman
Bart Mcdaniel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU7722298A publication Critical patent/AU7722298A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
AU77222/98A 1997-06-12 1998-06-03 A well to substrate photodiode for use in a cmos sensor on salicide process Abandoned AU7722298A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08873987 1997-06-12
US08/873,987 US6040592A (en) 1997-06-12 1997-06-12 Well to substrate photodiode for use in a CMOS sensor on a salicide process
PCT/US1998/011432 WO1998057369A1 (en) 1997-06-12 1998-06-03 A well to substrate photodiode for use in a cmos sensor on a salicide process

Publications (1)

Publication Number Publication Date
AU7722298A true AU7722298A (en) 1998-12-30

Family

ID=25362746

Family Applications (1)

Application Number Title Priority Date Filing Date
AU77222/98A Abandoned AU7722298A (en) 1997-06-12 1998-06-03 A well to substrate photodiode for use in a cmos sensor on salicide process

Country Status (5)

Country Link
US (1) US6040592A (https=)
EP (1) EP1004140B1 (https=)
JP (2) JP4637975B2 (https=)
AU (1) AU7722298A (https=)
WO (1) WO1998057369A1 (https=)

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Also Published As

Publication number Publication date
EP1004140A1 (en) 2000-05-31
JP4637975B2 (ja) 2011-02-23
US6040592A (en) 2000-03-21
JP2010183089A (ja) 2010-08-19
JP2002505035A (ja) 2002-02-12
WO1998057369A1 (en) 1998-12-17
EP1004140B1 (en) 2007-12-19
EP1004140A4 (en) 2000-09-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase