JP4626134B2 - 超電導体およびその製造方法 - Google Patents
超電導体およびその製造方法 Download PDFInfo
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- JP4626134B2 JP4626134B2 JP2003324167A JP2003324167A JP4626134B2 JP 4626134 B2 JP4626134 B2 JP 4626134B2 JP 2003324167 A JP2003324167 A JP 2003324167A JP 2003324167 A JP2003324167 A JP 2003324167A JP 4626134 B2 JP4626134 B2 JP 4626134B2
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- superconducting
- superconductor
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- 239000002887 superconductor Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000015572 biosynthetic process Effects 0.000 description 39
- 238000005755 formation reaction Methods 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 19
- 239000000758 substrate Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- -1 YAlO 3 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Physical Vapour Deposition (AREA)
Description
柿本一臣、他2名,「PLD法を用いた積層成膜による高IcY系線材の作製,第67回2002年秋季低温工学・超電導学会講演概要集,2002年,p228
図1を参照して、図1(a)の下地層1として、幅10mm、厚さ0.1mmの2軸配向Ni合金基板に、厚さ0.1mmの2軸配向YSZ中間層が形成されたNi基合金テープ(ここでは、2軸配向YSZ中間層が隣接下地層11となる)を用いて、レーザ蒸着法により、ガス圧26.6Pa(200mTorr)のO2ガス雰囲気中で、Ho1Ba2Cu3O7-δターゲットにKrFエキシマレーザをエネルギー密度3J/cm2で照射しながら、下地層1を供給面積速度0.05m2/hで供給することにより、図1(b)に示すように、下地層1の隣接下地層11である2軸配向YSZ中間層上に、膜厚0.25μmのHo1Ba2Cu3O7-δ膜を成膜して超電導層2を形成した。さらに、上記と同様の成膜条件で、図1(c)以降に示すように、2回目以降の成膜を行なうことにより超電導層2の層厚を増大させた。
参考例1と同様の下地層を用いて、下地層の供給面積速度以外は参考例1と同様の成膜条件により、1回の成膜により層厚の大きい超電導層を有する超電導体を作製した。ここで、下地層の供給面積速度を小さくすることにより、超電導層の層厚を大きくすることができる。かかる方法により、層厚0.25μmの超電導層を有する超電導体(比較例1)、層厚0.5μmの超電導層を有する超電導体(比較例2)、層厚0.75μmの超電導層を有する超電導体(比較例3)、層厚1.0μmの超電導層を有する超電導体(比較例4)、層厚1.25μmの超電導層を有する超電導体(比較例5)、層厚1.5μmの超電導層を有する超電導体(比較例6)、層厚1.75μmの超電導層を有する超電導体(比較例7)を作製した。これらのJcおよびIcの測定を行ない、その結果を表1にまとめた。
2回以上の成膜により超電導層を形成する際に、下地層の供給面積速度を調節することにより、各回の成膜における超電導膜の膜厚を0.1μm(実施例9)、0.2μm(実施例10)、0.25μm(実施例11)、0.3μm(実施例12)、0.35μm(比較例8)、0.4μm(比較例9)または0.5μm(比較例10)として、3回の成膜を行なった以外は、参考例1と同様にして超電導体を作製した。
Claims (2)
- 下地層に3回以上の成膜により層厚が0.75μm〜3μmの超電導層を形成する超電導体の製造方法であって、各回の成膜における超電導膜の膜厚を0.3μm以下とすることを特徴とする超電導体の製造方法。
- 下地層に3回以上の成膜により層厚が0.75μm〜3.0μmの超電導層が形成されている超電導体であって、各回の成膜における超電導膜の膜厚が0.3μm以下である超電導体。
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003324167A JP4626134B2 (ja) | 2003-09-17 | 2003-09-17 | 超電導体およびその製造方法 |
EP04771646.9A EP1667174B1 (en) | 2003-09-17 | 2004-08-06 | Superconductor and process for producing the same |
PCT/JP2004/011679 WO2005029512A1 (ja) | 2003-09-17 | 2004-08-06 | 超電導体およびその製造方法 |
CNB2004800023614A CN100472670C (zh) | 2003-09-17 | 2004-08-06 | 超导体及其制造方法 |
CA002510635A CA2510635A1 (en) | 2003-09-17 | 2004-08-06 | Superconductor and method of producing the same |
AU2004275128A AU2004275128B8 (en) | 2003-09-17 | 2004-08-06 | Superconductor and process for producing the same |
KR1020057012535A KR101056227B1 (ko) | 2003-09-17 | 2004-08-06 | 초전도체 및 그 제조방법 |
US10/536,694 US7371586B2 (en) | 2003-09-17 | 2004-08-06 | Superconductor and process for producing the same |
NZ540721A NZ540721A (en) | 2003-09-17 | 2004-08-06 | Superconductor and method of producing the same |
RU2005119004/09A RU2332738C2 (ru) | 2003-09-17 | 2004-08-06 | Сверхпроводник и способ его изготовления |
HK06105357.0A HK1085304A1 (en) | 2003-09-17 | 2006-05-08 | Superconductor and method of producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003324167A JP4626134B2 (ja) | 2003-09-17 | 2003-09-17 | 超電導体およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005093205A JP2005093205A (ja) | 2005-04-07 |
JP4626134B2 true JP4626134B2 (ja) | 2011-02-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003324167A Expired - Fee Related JP4626134B2 (ja) | 2003-09-17 | 2003-09-17 | 超電導体およびその製造方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US7371586B2 (ja) |
EP (1) | EP1667174B1 (ja) |
JP (1) | JP4626134B2 (ja) |
KR (1) | KR101056227B1 (ja) |
CN (1) | CN100472670C (ja) |
AU (1) | AU2004275128B8 (ja) |
CA (1) | CA2510635A1 (ja) |
HK (1) | HK1085304A1 (ja) |
NZ (1) | NZ540721A (ja) |
RU (1) | RU2332738C2 (ja) |
WO (1) | WO2005029512A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007220467A (ja) * | 2006-02-16 | 2007-08-30 | Sumitomo Electric Ind Ltd | 超電導薄膜材料の製造方法、超電導機器、および超電導薄膜材料 |
AU2007216116A1 (en) * | 2006-02-16 | 2007-08-23 | Sumitomo Electric Industries, Ltd. | Method of manufacturing superconducting thin-film material, superconducting device and superconducting thin-film material |
JP2007311194A (ja) * | 2006-05-18 | 2007-11-29 | Sumitomo Electric Ind Ltd | 超電導薄膜材料および超電導薄膜材料の製造方法 |
JP4690246B2 (ja) * | 2006-05-19 | 2011-06-01 | 住友電気工業株式会社 | 超電導薄膜材料およびその製造方法 |
EP2800106A4 (en) | 2012-02-01 | 2015-03-11 | Furukawa Electric Co Ltd | METHOD FOR PRODUCING A SUPER-LEADING WIRE MATERIAL AND SUPER-LEADING WIRE MATERIAL |
EP2960954A1 (de) | 2014-06-24 | 2015-12-30 | Basf Se | Verfahren zur Herstellung eines Komposits umfassend eine Hochtemperatursupraleiter(HTS)-Schicht |
JP6374365B2 (ja) * | 2015-09-16 | 2018-08-15 | 株式会社東芝 | 酸化物超電導体、およびその製造方法 |
RU2757450C1 (ru) * | 2020-09-09 | 2021-10-15 | Автономная некоммерческая образовательная организация высшего образования "Сколковский институт науки и технологий" | Высокотемпературный сверхпроводящий гидрид и способ его получения |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS62157641A (ja) * | 1985-12-27 | 1987-07-13 | Nec Kansai Ltd | カラ−陰極線管の蛍光面形成方法 |
JPS643908A (en) * | 1987-06-26 | 1989-01-09 | Hitachi Ltd | Composite conductor |
US5183800A (en) * | 1987-07-15 | 1993-02-02 | Sharp Kabushiki Kaisha | Interconnection method for semiconductor device comprising a high-temperature superconductive material |
JPH01186657A (ja) * | 1988-01-14 | 1989-07-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH02120231A (ja) * | 1988-10-27 | 1990-05-08 | Nec Corp | 酸化物超伝導薄膜の製造方法 |
JP2853161B2 (ja) * | 1989-05-19 | 1999-02-03 | 住友電気工業株式会社 | 酸化物超電導膜の製造方法 |
JPH0353413A (ja) * | 1989-07-21 | 1991-03-07 | Nippon Telegr & Teleph Corp <Ntt> | 超伝導配線 |
JP2804102B2 (ja) * | 1989-08-11 | 1998-09-24 | 株式会社日立製作所 | 酸化物超格子材料 |
JPH075437B2 (ja) * | 1989-09-29 | 1995-01-25 | 神奈川県 | 酸化物超伝導薄膜の製造方法 |
JPH0672714A (ja) * | 1992-07-06 | 1994-03-15 | Toray Ind Inc | 超電導体およびその製造方法 |
US5432151A (en) * | 1993-07-12 | 1995-07-11 | Regents Of The University Of California | Process for ion-assisted laser deposition of biaxially textured layer on substrate |
JPH07206437A (ja) * | 1994-01-13 | 1995-08-08 | Toray Ind Inc | 超電導体およびその製造方法 |
US6451450B1 (en) * | 1995-04-10 | 2002-09-17 | Ut-Battelle, Llc | Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom |
JPH10218698A (ja) * | 1997-02-06 | 1998-08-18 | Idotai Tsushin Sentan Gijutsu Kenkyusho:Kk | 超伝導薄膜の成膜方法 |
US6312819B1 (en) * | 1999-05-26 | 2001-11-06 | The Regents Of The University Of California | Oriented conductive oxide electrodes on SiO2/Si and glass |
EP1271666A3 (en) * | 2001-06-22 | 2006-01-25 | Fujikura Ltd. | Oxide superconductor layer and its production method |
US6993823B2 (en) * | 2002-05-24 | 2006-02-07 | Sumitomo Electric Industries, Ltd. | Method of manufacturing oxide superconducting wire |
-
2003
- 2003-09-17 JP JP2003324167A patent/JP4626134B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-06 AU AU2004275128A patent/AU2004275128B8/en not_active Ceased
- 2004-08-06 RU RU2005119004/09A patent/RU2332738C2/ru not_active IP Right Cessation
- 2004-08-06 US US10/536,694 patent/US7371586B2/en not_active Expired - Fee Related
- 2004-08-06 EP EP04771646.9A patent/EP1667174B1/en not_active Revoked
- 2004-08-06 KR KR1020057012535A patent/KR101056227B1/ko active IP Right Grant
- 2004-08-06 CN CNB2004800023614A patent/CN100472670C/zh not_active Expired - Fee Related
- 2004-08-06 WO PCT/JP2004/011679 patent/WO2005029512A1/ja active Application Filing
- 2004-08-06 NZ NZ540721A patent/NZ540721A/en not_active IP Right Cessation
- 2004-08-06 CA CA002510635A patent/CA2510635A1/en not_active Abandoned
-
2006
- 2006-05-08 HK HK06105357.0A patent/HK1085304A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1667174A4 (en) | 2010-11-24 |
WO2005029512A1 (ja) | 2005-03-31 |
US20060014304A1 (en) | 2006-01-19 |
CN1739171A (zh) | 2006-02-22 |
KR20060115956A (ko) | 2006-11-13 |
AU2004275128B8 (en) | 2009-12-03 |
AU2004275128A1 (en) | 2005-03-31 |
NZ540721A (en) | 2008-04-30 |
EP1667174B1 (en) | 2013-10-09 |
JP2005093205A (ja) | 2005-04-07 |
HK1085304A1 (en) | 2006-08-18 |
RU2005119004A (ru) | 2006-01-27 |
RU2332738C2 (ru) | 2008-08-27 |
AU2004275128B2 (en) | 2009-05-28 |
EP1667174A1 (en) | 2006-06-07 |
CA2510635A1 (en) | 2005-03-31 |
CN100472670C (zh) | 2009-03-25 |
KR101056227B1 (ko) | 2011-08-11 |
US7371586B2 (en) | 2008-05-13 |
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