JP4622466B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP4622466B2
JP4622466B2 JP2004329250A JP2004329250A JP4622466B2 JP 4622466 B2 JP4622466 B2 JP 4622466B2 JP 2004329250 A JP2004329250 A JP 2004329250A JP 2004329250 A JP2004329250 A JP 2004329250A JP 4622466 B2 JP4622466 B2 JP 4622466B2
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Japan
Prior art keywords
layer
nitride semiconductor
type
barrier
well
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JP2004329250A
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Japanese (ja)
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JP2005057308A (ja
JP2005057308A5 (enExample
Inventor
公二 谷沢
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Nichia Corp
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Nichia Corp
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Priority to JP2004329250A priority Critical patent/JP4622466B2/ja
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JP2004329250A 2004-11-12 2004-11-12 窒化物半導体素子 Expired - Lifetime JP4622466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004329250A JP4622466B2 (ja) 2004-11-12 2004-11-12 窒化物半導体素子

Applications Claiming Priority (1)

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JP2004329250A JP4622466B2 (ja) 2004-11-12 2004-11-12 窒化物半導体素子

Related Parent Applications (1)

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JP15948299A Division JP3719047B2 (ja) 1999-06-07 1999-06-07 窒化物半導体素子

Publications (3)

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JP2005057308A JP2005057308A (ja) 2005-03-03
JP2005057308A5 JP2005057308A5 (enExample) 2006-07-27
JP4622466B2 true JP4622466B2 (ja) 2011-02-02

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JP2004329250A Expired - Lifetime JP4622466B2 (ja) 2004-11-12 2004-11-12 窒化物半導体素子

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123831B2 (en) 2012-09-20 2015-09-01 Kabushiki Kaisha Toshiba Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
US10218152B1 (en) 2017-08-22 2019-02-26 Sharp Kabushiki Kaisha Semiconductor laser diode with low threshold current

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4884826B2 (ja) * 2006-04-28 2012-02-29 ローム株式会社 半導体発光素子
JP2009184836A (ja) * 2008-02-01 2009-08-20 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の結晶成長方法、発光デバイスの製造方法および電子デバイスの製造方法
JP2011187579A (ja) 2010-03-05 2011-09-22 Sony Corp モードロック半導体レーザ素子及びその駆動方法
JP5023230B1 (ja) 2011-05-16 2012-09-12 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
JP5337272B2 (ja) * 2012-04-16 2013-11-06 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
CN104364917B (zh) 2012-06-13 2017-03-15 夏普株式会社 氮化物半导体发光元件及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197784A (ja) * 1982-05-12 1983-11-17 Nec Corp 発光ダイオ−ド
JP3290672B2 (ja) * 1990-08-20 2002-06-10 株式会社東芝 半導体発光ダイオード
JPH04218994A (ja) * 1990-08-31 1992-08-10 Toshiba Corp 半導体発光装置
JPH0773146B2 (ja) * 1993-03-30 1995-08-02 日本電気株式会社 超格子構造体及び半導体発光素子
JPH07193333A (ja) * 1993-12-27 1995-07-28 Mitsubishi Chem Corp 半導体発光素子
JPH07326824A (ja) * 1994-05-30 1995-12-12 Sony Corp 発光素子
JP2735057B2 (ja) * 1994-12-22 1998-04-02 日亜化学工業株式会社 窒化物半導体発光素子
JPH1022524A (ja) * 1996-07-02 1998-01-23 Omron Corp 半導体発光素子
WO1998019375A1 (en) * 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
JP4787205B2 (ja) * 1997-07-30 2011-10-05 富士通株式会社 半導体レーザの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123831B2 (en) 2012-09-20 2015-09-01 Kabushiki Kaisha Toshiba Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
US9305773B2 (en) 2012-09-20 2016-04-05 Kabushiki Kaisha Toshiba Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
US10218152B1 (en) 2017-08-22 2019-02-26 Sharp Kabushiki Kaisha Semiconductor laser diode with low threshold current

Also Published As

Publication number Publication date
JP2005057308A (ja) 2005-03-03

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