JP4614075B2 - エポキシ・シリコーン混成樹脂組成物及びその製造方法、並びに発光半導体装置 - Google Patents

エポキシ・シリコーン混成樹脂組成物及びその製造方法、並びに発光半導体装置 Download PDF

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JP4614075B2
JP4614075B2 JP2005081054A JP2005081054A JP4614075B2 JP 4614075 B2 JP4614075 B2 JP 4614075B2 JP 2005081054 A JP2005081054 A JP 2005081054A JP 2005081054 A JP2005081054 A JP 2005081054A JP 4614075 B2 JP4614075 B2 JP 4614075B2
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component
epoxy
diglycidyl ether
emitting semiconductor
light emitting
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JP2006265274A (ja
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欣也 児玉
努 柏木
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Priority to JP2005081054A priority Critical patent/JP4614075B2/ja
Priority to TW095109697A priority patent/TWI418591B/zh
Priority to KR1020060025617A priority patent/KR101252301B1/ko
Priority to CN2006100682631A priority patent/CN1837284B/zh
Publication of JP2006265274A publication Critical patent/JP2006265274A/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/10—Metal compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Devices (AREA)
JP2005081054A 2005-03-22 2005-03-22 エポキシ・シリコーン混成樹脂組成物及びその製造方法、並びに発光半導体装置 Active JP4614075B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005081054A JP4614075B2 (ja) 2005-03-22 2005-03-22 エポキシ・シリコーン混成樹脂組成物及びその製造方法、並びに発光半導体装置
TW095109697A TWI418591B (zh) 2005-03-22 2006-03-21 Epoxy. Polysiloxane mixed resin composition and its manufacturing method and light emitting semiconductor device
KR1020060025617A KR101252301B1 (ko) 2005-03-22 2006-03-21 에폭시ㆍ실리콘 혼성 수지 조성물, 그의 제조 방법, 및발광 반도체 장치
CN2006100682631A CN1837284B (zh) 2005-03-22 2006-03-22 环氧-有机硅混合树脂组合物及其制造方法、以及发光半导体装置

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JP2005081054A JP4614075B2 (ja) 2005-03-22 2005-03-22 エポキシ・シリコーン混成樹脂組成物及びその製造方法、並びに発光半導体装置

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JP2006265274A JP2006265274A (ja) 2006-10-05
JP4614075B2 true JP4614075B2 (ja) 2011-01-19

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KR (1) KR101252301B1 (ko)
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TW (1) TWI418591B (ko)

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JP4844732B2 (ja) * 2005-05-24 2011-12-28 信越化学工業株式会社 発光半導体装置
JP2007191697A (ja) * 2005-12-19 2007-08-02 Shin Etsu Chem Co Ltd エポキシ・シリコーン混成樹脂組成物及び光半導体装置
JP5010247B2 (ja) * 2006-11-20 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP5608955B2 (ja) * 2007-02-06 2014-10-22 日亜化学工業株式会社 発光装置及びその製造方法並びに発光装置用成形体
US9102786B2 (en) 2007-09-27 2015-08-11 Mitsubishi Gas Chemical Company, Inc. Epoxy resin composition, cured object obtained therefrom, and light-emitting diode
JP2010248385A (ja) * 2009-04-16 2010-11-04 Jsr Corp 組成物、硬化体、および光半導体封止材
JP5373696B2 (ja) * 2010-05-07 2013-12-18 信越化学工業株式会社 新規シルフェニレン骨格含有シリコーン型高分子化合物及びその製造方法
JP2012049519A (ja) * 2010-07-26 2012-03-08 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び発光装置
JP6232714B2 (ja) * 2013-03-08 2017-11-22 日本ゼオン株式会社 エポキシ樹脂組成物、封止材、および光半導体装置
CN103694478B (zh) * 2013-12-10 2016-01-13 广东聚合有机硅材料有限公司 一种聚硅氧烷的合成方法
EP3158595B1 (en) 2014-06-19 2021-12-01 Inkron Oy Led lamp with siloxane particle material
JP5972433B1 (ja) * 2015-07-21 2016-08-17 古河電気工業株式会社 電子デバイス封止用硬化性吸湿性樹脂組成物、樹脂硬化物および電子デバイス
JP6010210B2 (ja) * 2015-12-10 2016-10-19 株式会社カネカ 表面実装型発光装置用樹脂成形体およびそれを用いた発光装置
TWI784922B (zh) * 2015-12-18 2022-12-01 香港商英克倫股份有限公司 Led燈、led燈之製造方法以及led裝置之密封方法
CN116925624B (zh) * 2023-08-24 2024-02-23 湖南庆润新材料有限公司 一种自清洁减反射涂料、涂层及制备方法

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JPS57133120A (en) * 1981-02-12 1982-08-17 Toshiba Corp Manufacturing of cast epoxy resin
JPS6189221A (ja) * 1984-10-08 1986-05-07 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物
JPH03294331A (ja) * 1990-04-11 1991-12-25 Toshiba Silicone Co Ltd 封止用エポキシ樹脂組成物およびその製造方法
JPH08224833A (ja) * 1994-11-17 1996-09-03 Shin Etsu Chem Co Ltd シリコーンゴムとシリコーン−エポキシ樹脂の複合体及びその製造方法
JPH10135522A (ja) * 1996-10-29 1998-05-22 Nippon Perunotsukusu Kk 発光ダイオードデバイス
JP2000248182A (ja) * 1999-03-02 2000-09-12 Dow Corning Toray Silicone Co Ltd 樹脂用添加剤、硬化性樹脂組成物、および硬化樹脂
JP2004289102A (ja) * 2003-01-29 2004-10-14 Asahi Kasei Chemicals Corp 発光素子封止用熱硬化性組成物および発光ダイオード
JP2004292714A (ja) * 2003-03-28 2004-10-21 Kanegafuchi Chem Ind Co Ltd 硬化性組成物、硬化物、その製造方法およびその硬化物により封止された発光ダイオード
JP2004292807A (ja) * 2003-03-12 2004-10-21 Shin Etsu Chem Co Ltd 発光半導体被覆保護材及び発光半導体装置
JP2005158766A (ja) * 2003-11-20 2005-06-16 Shin Etsu Chem Co Ltd エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
JP4300418B2 (ja) * 2004-04-30 2009-07-22 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置

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CN1155562A (zh) * 1995-10-11 1997-07-30 陶氏康宁公司 改进粘合性的可固化有机聚硅氧烷组合物
CA2236391A1 (en) * 1997-05-02 1998-11-02 Bayer Aktiengesellschaft Addition crosslinking silicone rubber mixtures, a process for the preparation thereof, a process for the preparation of composite molded parts and the use thereof
FR2775481B1 (fr) * 1998-02-27 2003-10-24 Rhodia Chimie Sa Composition silicone adhesive reticulable et utilisation de cette composition pour le collage de substrats divers

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133120A (en) * 1981-02-12 1982-08-17 Toshiba Corp Manufacturing of cast epoxy resin
JPS6189221A (ja) * 1984-10-08 1986-05-07 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物
JPH03294331A (ja) * 1990-04-11 1991-12-25 Toshiba Silicone Co Ltd 封止用エポキシ樹脂組成物およびその製造方法
JPH08224833A (ja) * 1994-11-17 1996-09-03 Shin Etsu Chem Co Ltd シリコーンゴムとシリコーン−エポキシ樹脂の複合体及びその製造方法
JPH10135522A (ja) * 1996-10-29 1998-05-22 Nippon Perunotsukusu Kk 発光ダイオードデバイス
JP2000248182A (ja) * 1999-03-02 2000-09-12 Dow Corning Toray Silicone Co Ltd 樹脂用添加剤、硬化性樹脂組成物、および硬化樹脂
JP2004289102A (ja) * 2003-01-29 2004-10-14 Asahi Kasei Chemicals Corp 発光素子封止用熱硬化性組成物および発光ダイオード
JP2004292807A (ja) * 2003-03-12 2004-10-21 Shin Etsu Chem Co Ltd 発光半導体被覆保護材及び発光半導体装置
JP2004292714A (ja) * 2003-03-28 2004-10-21 Kanegafuchi Chem Ind Co Ltd 硬化性組成物、硬化物、その製造方法およびその硬化物により封止された発光ダイオード
JP2005158766A (ja) * 2003-11-20 2005-06-16 Shin Etsu Chem Co Ltd エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
JP4300418B2 (ja) * 2004-04-30 2009-07-22 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置

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