JP4601092B2 - ブレークダウン特性及びオン抵抗特性を改善したトレンチ形ｍｏｓｆｅｔ並びにその製造方法 - Google Patents

ブレークダウン特性及びオン抵抗特性を改善したトレンチ形ｍｏｓｆｅｔ並びにその製造方法 Download PDF

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Publication number
JP4601092B2
JP4601092B2 JP07159699A JP7159699A JP4601092B2 JP 4601092 B2 JP4601092 B2 JP 4601092B2 JP 07159699 A JP07159699 A JP 07159699A JP 7159699 A JP7159699 A JP 7159699A JP 4601092 B2 JP4601092 B2 JP 4601092B2
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Prior art keywords
trench
conductivity type
substrate
sidewall
mosfet
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Expired - Lifetime
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Japanese (ja)
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JP2000164869A (ja
JP2000164869A5 (https=
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モハメッド・エヌ・ダーウィッシュ
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Vishay Siliconix Inc
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Siliconix Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP07159699A 1998-11-25 1999-03-17 ブレークダウン特性及びオン抵抗特性を改善したトレンチ形ｍｏｓｆｅｔ並びにその製造方法 Expired - Lifetime JP4601092B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/200197 1998-11-25
US09/200,197 US6084264A (en) 1998-11-25 1998-11-25 Trench MOSFET having improved breakdown and on-resistance characteristics

Publications (3)

Publication Number Publication Date
JP2000164869A JP2000164869A (ja) 2000-06-16
JP2000164869A5 JP2000164869A5 (https=) 2006-04-20
JP4601092B2 true JP4601092B2 (ja) 2010-12-22

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JP07159699A Expired - Lifetime JP4601092B2 (ja) 1998-11-25 1999-03-17 ブレークダウン特性及びオン抵抗特性を改善したトレンチ形ｍｏｓｆｅｔ並びにその製造方法

Country Status (4)

Country Link
US (1) US6084264A (https=)
EP (1) EP1014450B1 (https=)
JP (1) JP4601092B2 (https=)
DE (1) DE69936090T2 (https=)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163052A (en) * 1997-04-04 2000-12-19 Advanced Micro Devices, Inc. Trench-gated vertical combination JFET and MOSFET devices
US6153467A (en) * 1998-06-03 2000-11-28 Texas Instruments - Acer Incorporated Method of fabricating high density buried bit line flash EEPROM memory cell with a shallow trench floating gate
GB2347014B (en) * 1999-02-18 2003-04-16 Zetex Plc Semiconductor device
US6351009B1 (en) * 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
US6472678B1 (en) * 2000-06-16 2002-10-29 General Semiconductor, Inc. Trench MOSFET with double-diffused body profile
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6534828B1 (en) * 2000-09-19 2003-03-18 Fairchild Semiconductor Corporation Integrated circuit device including a deep well region and associated methods
US6781195B2 (en) * 2001-01-23 2004-08-24 Semiconductor Components Industries, L.L.C. Semiconductor bidirectional switching device and method
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6713813B2 (en) * 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
JP4932088B2 (ja) 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
US6777745B2 (en) * 2001-06-14 2004-08-17 General Semiconductor, Inc. Symmetric trench MOSFET device and method of making same
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US6849898B2 (en) * 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
US6764906B2 (en) * 2001-07-03 2004-07-20 Siliconix Incorporated Method for making trench mosfet having implanted drain-drift region
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US6569738B2 (en) * 2001-07-03 2003-05-27 Siliconix, Inc. Process for manufacturing trench gated MOSFET having drain/drift region
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
EP2259325B1 (en) * 2002-02-20 2013-12-25 Shindengen Electric Manufacturing Co., Ltd. Transistor device
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US6838722B2 (en) * 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
GB0208833D0 (en) * 2002-04-18 2002-05-29 Koninkl Philips Electronics Nv Trench-gate semiconductor devices
US6784505B2 (en) * 2002-05-03 2004-08-31 Fairchild Semiconductor Corporation Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
DE10223699B4 (de) * 2002-05-28 2007-11-22 Infineon Technologies Ag MOS-Transistoreinrichtung vom Trenchtyp
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6632712B1 (en) 2002-10-03 2003-10-14 Chartered Semiconductor Manufacturing Ltd. Method of fabricating variable length vertical transistors
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US6979862B2 (en) * 2003-01-23 2005-12-27 International Rectifier Corporation Trench MOSFET superjunction structure and method to manufacture
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7075147B2 (en) * 2003-06-11 2006-07-11 International Rectifier Corporation Low on resistance power MOSFET with variably spaced trenches and offset contacts
JP4945055B2 (ja) * 2003-08-04 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP3954541B2 (ja) * 2003-08-05 2007-08-08 株式会社東芝 半導体装置及びその製造方法
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7372088B2 (en) * 2004-01-27 2008-05-13 Matsushita Electric Industrial Co., Ltd. Vertical gate semiconductor device and method for fabricating the same
JP4091921B2 (ja) * 2004-02-16 2008-05-28 松下電器産業株式会社 半導体装置及びその製造方法
TWI256676B (en) * 2004-03-26 2006-06-11 Siliconix Inc Termination for trench MIS device having implanted drain-drift region
US7041561B2 (en) * 2004-03-31 2006-05-09 Agere Systems Inc. Enhanced substrate contact for a semiconductor device
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
US7297603B2 (en) * 2005-03-31 2007-11-20 Semiconductor Components Industries, L.L.C. Bi-directional transistor and method therefor
AT504998A2 (de) 2005-04-06 2008-09-15 Fairchild Semiconductor Trenched-gate-feldeffekttransistoren und verfahren zum bilden derselben
US7494876B1 (en) * 2005-04-21 2009-02-24 Vishay Siliconix Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
DE112006001516T5 (de) 2005-06-10 2008-04-17 Fairchild Semiconductor Corp. Feldeffekttransistor mit Ladungsgleichgewicht
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7282406B2 (en) * 2006-03-06 2007-10-16 Semiconductor Companents Industries, L.L.C. Method of forming an MOS transistor and structure therefor
US7537970B2 (en) * 2006-03-06 2009-05-26 Semiconductor Components Industries, L.L.C. Bi-directional transistor with by-pass path and method therefor
US8350318B2 (en) * 2006-03-06 2013-01-08 Semiconductor Components Industries, Llc Method of forming an MOS transistor and structure therefor
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
EP1850396A3 (en) * 2006-04-28 2008-09-17 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP2008103378A (ja) * 2006-10-17 2008-05-01 Nec Electronics Corp 半導体装置とその製造方法
JP2007173878A (ja) * 2007-03-28 2007-07-05 Toshiba Corp 半導体装置
JP2008294384A (ja) 2007-04-27 2008-12-04 Renesas Technology Corp 半導体装置
CN101868856B (zh) 2007-09-21 2014-03-12 飞兆半导体公司 用于功率器件的超结结构及制造方法
TW200921912A (en) * 2007-11-05 2009-05-16 Anpec Electronics Corp Power transistor capable of decreasing capacitance between gate and drain
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US7816759B2 (en) * 2008-01-09 2010-10-19 Infineon Technologies Ag Integrated circuit including isolation regions substantially through substrate
JP2009231805A (ja) * 2008-02-29 2009-10-08 Renesas Technology Corp 半導体装置
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
JP2010206002A (ja) * 2009-03-04 2010-09-16 Fuji Electric Systems Co Ltd ｐチャネル型炭化珪素ＭＯＳＦＥＴ
US8643068B2 (en) 2009-03-12 2014-02-04 Infineon Technologies Ag Integrated circuit having field effect transistors and manufacturing method
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
EP2543072B1 (en) 2010-03-02 2021-10-06 Vishay-Siliconix Structures and methods of fabricating dual gate devices
US8378392B2 (en) * 2010-04-07 2013-02-19 Force Mos Technology Co., Ltd. Trench MOSFET with body region having concave-arc shape
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP2012069824A (ja) 2010-09-24 2012-04-05 Seiko Instruments Inc 半導体装置および半導体装置の製造方法
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
WO2012158977A2 (en) 2011-05-18 2012-11-22 Vishay-Siliconix Semiconductor device
JP2013258333A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 電力用半導体装置
US9954072B2 (en) 2012-10-18 2018-04-24 Mitsubishi Electric Corporation Silicon-carbide semiconductor device and manufacturing method thereof
US9236433B2 (en) * 2013-10-10 2016-01-12 Cree, Inc. Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer
DE102013019851B4 (de) * 2013-11-26 2015-10-22 Infineon Technologies Ag Schottky-Diode mit reduzierter Flussspannung
JP6032337B1 (ja) 2015-09-28 2016-11-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6115678B1 (ja) * 2016-02-01 2017-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2018087896A1 (ja) * 2016-11-11 2018-05-17 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
US10644146B1 (en) 2018-11-13 2020-05-05 Nxp Usa, Inc. Vertical bi-directional switches and method for making same
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
US12268018B2 (en) * 2021-06-11 2025-04-01 The Hong Kong University Of Science And Technology GaN vertical trench MOSFETs and methods of manufacturing the same
CN113838757B (zh) * 2021-10-29 2024-02-06 中国电子科技集团公司第二十四研究所 一种抗单粒子效应vdmos器件的形成方法及vdmos器件
CN116598205B (zh) * 2023-07-18 2023-10-03 凌锐半导体(上海)有限公司 一种沟槽型mosfet器件及其制造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JP2644515B2 (ja) * 1988-01-27 1997-08-25 株式会社日立製作所 半導体装置
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
JPH03101167A (ja) * 1989-09-13 1991-04-25 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
US5282018A (en) * 1991-01-09 1994-01-25 Kabushiki Kaisha Toshiba Power semiconductor device having gate structure in trench
CN1019720B (zh) * 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
JPH0621468A (ja) * 1992-06-29 1994-01-28 Toshiba Corp 絶縁ゲート型半導体装置
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
GB9306895D0 (en) * 1993-04-01 1993-05-26 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
JP3155894B2 (ja) * 1994-09-29 2001-04-16 株式会社東芝 半導体装置およびその製造方法
JP3307785B2 (ja) * 1994-12-13 2002-07-24 三菱電機株式会社 絶縁ゲート型半導体装置
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
JP3206726B2 (ja) * 1995-12-07 2001-09-10 富士電機株式会社 Ｍｏｓ型半導体装置の製造方法
JP3141769B2 (ja) * 1996-02-13 2001-03-05 富士電機株式会社 絶縁ゲート型サイリスタ及びその製造方法
US5821583A (en) * 1996-03-06 1998-10-13 Siliconix Incorporated Trenched DMOS transistor with lightly doped tub
DE69739206D1 (de) * 1996-07-19 2009-02-26 Siliconix Inc Hochdichte-graben-dmos-transistor mit grabenbodemimplantierung
US5808340A (en) * 1996-09-18 1998-09-15 Advanced Micro Devices, Inc. Short channel self aligned VMOS field effect transistor

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Publication number Publication date
DE69936090T2 (de) 2008-02-14
DE69936090D1 (de) 2007-06-28
US6084264A (en) 2000-07-04
EP1014450B1 (en) 2007-05-16
EP1014450A2 (en) 2000-06-28
JP2000164869A (ja) 2000-06-16
EP1014450A3 (en) 2001-02-07

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