JP2000164869A5 - - Google Patents

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Publication number
JP2000164869A5
JP2000164869A5 JP1999071596A JP7159699A JP2000164869A5 JP 2000164869 A5 JP2000164869 A5 JP 2000164869A5 JP 1999071596 A JP1999071596 A JP 1999071596A JP 7159699 A JP7159699 A JP 7159699A JP 2000164869 A5 JP2000164869 A5 JP 2000164869A5
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JP
Japan
Prior art keywords
trench
substrate
epitaxial layer
conductive type
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP1999071596A
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English (en)
Japanese (ja)
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JP2000164869A (ja
JP4601092B2 (ja
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Publication date
Priority claimed from US09/200,197 external-priority patent/US6084264A/en
Application filed filed Critical
Publication of JP2000164869A publication Critical patent/JP2000164869A/ja
Publication of JP2000164869A5 publication Critical patent/JP2000164869A5/ja
Application granted granted Critical
Publication of JP4601092B2 publication Critical patent/JP4601092B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP07159699A 1998-11-25 1999-03-17 ブレークダウン特性及びオン抵抗特性を改善したトレンチ形ｍｏｓｆｅｔ並びにその製造方法 Expired - Lifetime JP4601092B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/200197 1998-11-25
US09/200,197 US6084264A (en) 1998-11-25 1998-11-25 Trench MOSFET having improved breakdown and on-resistance characteristics

Publications (3)

Publication Number Publication Date
JP2000164869A JP2000164869A (ja) 2000-06-16
JP2000164869A5 true JP2000164869A5 (https=) 2006-04-20
JP4601092B2 JP4601092B2 (ja) 2010-12-22

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Family Applications (1)

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JP07159699A Expired - Lifetime JP4601092B2 (ja) 1998-11-25 1999-03-17 ブレークダウン特性及びオン抵抗特性を改善したトレンチ形ｍｏｓｆｅｔ並びにその製造方法

Country Status (4)

Country Link
US (1) US6084264A (https=)
EP (1) EP1014450B1 (https=)
JP (1) JP4601092B2 (https=)
DE (1) DE69936090T2 (https=)

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