JP4588885B2 - プラズマ処理システム及びプラズマ処理方法並びにガス注入器 - Google Patents
プラズマ処理システム及びプラズマ処理方法並びにガス注入器 Download PDFInfo
- Publication number
- JP4588885B2 JP4588885B2 JP2000592857A JP2000592857A JP4588885B2 JP 4588885 B2 JP4588885 B2 JP 4588885B2 JP 2000592857 A JP2000592857 A JP 2000592857A JP 2000592857 A JP2000592857 A JP 2000592857A JP 4588885 B2 JP4588885 B2 JP 4588885B2
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- Prior art keywords
- gas
- gas injector
- substrate
- injector
- chamber
- Prior art date
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- Expired - Lifetime
Links
- 238000012545 processing Methods 0.000 title claims description 74
- 238000003672 processing method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 136
- 238000000034 method Methods 0.000 claims description 108
- 230000008569 process Effects 0.000 claims description 89
- 238000002347 injection Methods 0.000 claims description 44
- 239000007924 injection Substances 0.000 claims description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 24
- 239000000460 chlorine Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 230000001154 acute effect Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 276
- 235000012431 wafers Nutrition 0.000 description 33
- 238000000151 deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 16
- 238000005530 etching Methods 0.000 description 14
- 238000009616 inductively coupled plasma Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 238000013461 design Methods 0.000 description 8
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- 239000000376 reactant Substances 0.000 description 7
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- 239000000463 material Substances 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 238000007654 immersion Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- -1 quartz Chemical compound 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007806 chemical reaction intermediate Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/223,273 US6230651B1 (en) | 1998-12-30 | 1998-12-30 | Gas injection system for plasma processing |
| US09/223,273 | 1998-12-30 | ||
| PCT/US1999/027917 WO2000041212A1 (en) | 1998-12-30 | 1999-12-07 | Gas injection system for plasma processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002534797A JP2002534797A (ja) | 2002-10-15 |
| JP2002534797A5 JP2002534797A5 (enExample) | 2007-04-05 |
| JP4588885B2 true JP4588885B2 (ja) | 2010-12-01 |
Family
ID=22835796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000592857A Expired - Lifetime JP4588885B2 (ja) | 1998-12-30 | 1999-12-07 | プラズマ処理システム及びプラズマ処理方法並びにガス注入器 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6230651B1 (enExample) |
| EP (1) | EP1145277B1 (enExample) |
| JP (1) | JP4588885B2 (enExample) |
| KR (1) | KR100665646B1 (enExample) |
| IL (1) | IL144001A (enExample) |
| TW (1) | TW548680B (enExample) |
| WO (1) | WO2000041212A1 (enExample) |
Families Citing this family (114)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2004088729A1 (en) * | 2003-03-26 | 2004-10-14 | Tokyo Electron Limited | Chemical processing system and method |
| US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| KR20060011887A (ko) * | 2003-05-30 | 2006-02-03 | 에비자 테크놀로지, 인크. | 가스 분산 시스템 |
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| JP5808750B2 (ja) * | 2009-11-30 | 2015-11-10 | ラム リサーチ コーポレーションLam Research Corporation | 傾斜側壁を備える静電チャック |
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- 1999-12-07 KR KR1020017008435A patent/KR100665646B1/ko not_active Expired - Lifetime
- 1999-12-07 EP EP99967134A patent/EP1145277B1/en not_active Expired - Lifetime
- 1999-12-07 JP JP2000592857A patent/JP4588885B2/ja not_active Expired - Lifetime
- 1999-12-07 IL IL14400199A patent/IL144001A/xx not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2002534797A (ja) | 2002-10-15 |
| US20010010257A1 (en) | 2001-08-02 |
| IL144001A0 (en) | 2002-04-21 |
| KR100665646B1 (ko) | 2007-01-09 |
| US20100327085A1 (en) | 2010-12-30 |
| WO2000041212A1 (en) | 2000-07-13 |
| US7785417B2 (en) | 2010-08-31 |
| KR20010101359A (ko) | 2001-11-14 |
| TW548680B (en) | 2003-08-21 |
| US6230651B1 (en) | 2001-05-15 |
| US8025731B2 (en) | 2011-09-27 |
| EP1145277A1 (en) | 2001-10-17 |
| IL144001A (en) | 2005-12-18 |
| EP1145277B1 (en) | 2012-02-08 |
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