JP4588091B2 - 半導体モジュールの製造方法 - Google Patents

半導体モジュールの製造方法 Download PDF

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Publication number
JP4588091B2
JP4588091B2 JP2009027741A JP2009027741A JP4588091B2 JP 4588091 B2 JP4588091 B2 JP 4588091B2 JP 2009027741 A JP2009027741 A JP 2009027741A JP 2009027741 A JP2009027741 A JP 2009027741A JP 4588091 B2 JP4588091 B2 JP 4588091B2
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JP
Japan
Prior art keywords
layer
electrode
semiconductor
protruding
semiconductor element
Prior art date
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Active
Application number
JP2009027741A
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English (en)
Japanese (ja)
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JP2009231815A (ja
JP2009231815A5 (enExample
Inventor
浩一 齋藤
芳央 岡山
康行 柳瀬
隆弘 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2009027741A priority Critical patent/JP4588091B2/ja
Priority to US12/394,721 priority patent/US8237258B2/en
Publication of JP2009231815A publication Critical patent/JP2009231815A/ja
Publication of JP2009231815A5 publication Critical patent/JP2009231815A5/ja
Application granted granted Critical
Publication of JP4588091B2 publication Critical patent/JP4588091B2/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/301Marks applied to devices, e.g. for alignment or identification for alignment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/601Marks applied to devices, e.g. for alignment or identification for use after dicing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/242Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009027741A 2008-02-29 2009-02-09 半導体モジュールの製造方法 Active JP4588091B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009027741A JP4588091B2 (ja) 2008-02-29 2009-02-09 半導体モジュールの製造方法
US12/394,721 US8237258B2 (en) 2008-02-29 2009-02-27 Semiconductor module including a semiconductor device, a device mounting board, and a protecting layer therebetween

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008049715 2008-02-29
JP2009027741A JP4588091B2 (ja) 2008-02-29 2009-02-09 半導体モジュールの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010163147A Division JP4806468B2 (ja) 2008-02-29 2010-07-20 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2009231815A JP2009231815A (ja) 2009-10-08
JP2009231815A5 JP2009231815A5 (enExample) 2010-05-13
JP4588091B2 true JP4588091B2 (ja) 2010-11-24

Family

ID=41012543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009027741A Active JP4588091B2 (ja) 2008-02-29 2009-02-09 半導体モジュールの製造方法

Country Status (2)

Country Link
US (1) US8237258B2 (enExample)
JP (1) JP4588091B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5173758B2 (ja) * 2008-11-17 2013-04-03 新光電気工業株式会社 半導体パッケージの製造方法
JP2013165087A (ja) * 2010-05-31 2013-08-22 Sanyo Electric Co Ltd 半導体モジュールおよび半導体モジュールの製造方法
US9123732B2 (en) * 2012-09-28 2015-09-01 Intel Corporation Die warpage control for thin die assembly
GB2557614A (en) * 2016-12-12 2018-06-27 Infineon Technologies Austria Ag Semiconductor device, electronic component and method
JP7471770B2 (ja) * 2017-12-28 2024-04-22 新光電気工業株式会社 インダクタ、及びインダクタの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4272561A (en) * 1979-05-29 1981-06-09 International Business Machines Corporation Hybrid process for SBD metallurgies
JP3533284B2 (ja) 1996-04-24 2004-05-31 新光電気工業株式会社 半導体装置用基板及びその製造方法並びに半導体装置
JP2000068641A (ja) 1998-08-20 2000-03-03 Mitsubishi Gas Chem Co Inc プリント配線板の製造方法
JP2000114302A (ja) * 1998-10-08 2000-04-21 Fuji Electric Co Ltd 半導体装置
JP3398609B2 (ja) 1998-11-30 2003-04-21 シャープ株式会社 半導体装置
JP2001007252A (ja) 1999-06-25 2001-01-12 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2004349361A (ja) * 2003-05-21 2004-12-09 Casio Comput Co Ltd 半導体装置およびその製造方法
JP2006310530A (ja) 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 回路装置およびその製造方法
JP4738971B2 (ja) * 2005-10-14 2011-08-03 Okiセミコンダクタ株式会社 半導体装置及びその製造方法
JP4568215B2 (ja) 2005-11-30 2010-10-27 三洋電機株式会社 回路装置および回路装置の製造方法
JP4874005B2 (ja) * 2006-06-09 2012-02-08 富士通セミコンダクター株式会社 半導体装置、その製造方法及びその実装方法

Also Published As

Publication number Publication date
JP2009231815A (ja) 2009-10-08
US20090218686A1 (en) 2009-09-03
US8237258B2 (en) 2012-08-07

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