JP4585661B2 - 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法 - Google Patents
電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法 Download PDFInfo
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- JP4585661B2 JP4585661B2 JP2000233145A JP2000233145A JP4585661B2 JP 4585661 B2 JP4585661 B2 JP 4585661B2 JP 2000233145 A JP2000233145 A JP 2000233145A JP 2000233145 A JP2000233145 A JP 2000233145A JP 4585661 B2 JP4585661 B2 JP 4585661B2
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- Prior art keywords
- electrode
- optical system
- charged particle
- system array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000233145A JP4585661B2 (ja) | 2000-03-31 | 2000-08-01 | 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法 |
| US09/819,737 US6965153B1 (en) | 2000-03-31 | 2001-03-29 | Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method |
| US10/454,576 US7038226B2 (en) | 2000-03-31 | 2003-06-05 | Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method |
| US11/168,425 US7126141B2 (en) | 2000-03-31 | 2005-06-29 | Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000097069 | 2000-03-31 | ||
| JP2000-97069 | 2000-03-31 | ||
| JP2000233145A JP4585661B2 (ja) | 2000-03-31 | 2000-08-01 | 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001345259A JP2001345259A (ja) | 2001-12-14 |
| JP2001345259A5 JP2001345259A5 (enExample) | 2007-09-13 |
| JP4585661B2 true JP4585661B2 (ja) | 2010-11-24 |
Family
ID=26589083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000233145A Expired - Fee Related JP4585661B2 (ja) | 2000-03-31 | 2000-08-01 | 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (3) | US6965153B1 (enExample) |
| JP (1) | JP4585661B2 (enExample) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4585661B2 (ja) | 2000-03-31 | 2010-11-24 | キヤノン株式会社 | 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法 |
| JP2001283756A (ja) * | 2000-03-31 | 2001-10-12 | Canon Inc | 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法 |
| JP4947841B2 (ja) * | 2000-03-31 | 2012-06-06 | キヤノン株式会社 | 荷電粒子線露光装置 |
| JP4947842B2 (ja) * | 2000-03-31 | 2012-06-06 | キヤノン株式会社 | 荷電粒子線露光装置 |
| JP2001284230A (ja) * | 2000-03-31 | 2001-10-12 | Canon Inc | 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法 |
| JP4246401B2 (ja) | 2001-01-18 | 2009-04-02 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子ビーム偏向装置 |
| JP2002217089A (ja) * | 2001-01-18 | 2002-08-02 | Advantest Corp | 電子ビーム偏向装置、電子ビーム偏向装置の製造方法、及び電子ビーム露光装置 |
| EP1383158B1 (en) * | 2002-07-16 | 2014-09-10 | Canon Kabushiki Kaisha | Charged-particle beam lens |
| JP2004282038A (ja) * | 2003-02-28 | 2004-10-07 | Canon Inc | 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置 |
| EP1463087B1 (en) * | 2003-03-24 | 2010-06-02 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh | Charged particle beam device |
| JP4459568B2 (ja) * | 2003-08-06 | 2010-04-28 | キヤノン株式会社 | マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置 |
| EP2575144B1 (en) | 2003-09-05 | 2017-07-12 | Carl Zeiss Microscopy GmbH | Particle-optical systems and arrangements and particle-optical components for such systems and arrangements |
| ATE441202T1 (de) * | 2004-05-17 | 2009-09-15 | Mapper Lithography Ip Bv | Belichtungssystem mit einem geladenen teilchenstrahl |
| US7102185B2 (en) * | 2004-06-21 | 2006-09-05 | Eastman Kodak Company | Lightshield architecture for interline transfer image sensors |
| JP4541798B2 (ja) * | 2004-08-06 | 2010-09-08 | キヤノン株式会社 | 荷電粒子線レンズアレイ、及び該荷電粒子線レンズアレイを用いた荷電粒子線露光装置 |
| JP4738822B2 (ja) * | 2005-01-26 | 2011-08-03 | キヤノン株式会社 | 静電レンズ装置およびその調整方法、荷電粒子線露光装置、ならびにデバイス製造方法 |
| JP4657740B2 (ja) * | 2005-01-26 | 2011-03-23 | キヤノン株式会社 | 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法 |
| JP4648087B2 (ja) * | 2005-05-25 | 2011-03-09 | キヤノン株式会社 | 偏向器の作製方法、荷電粒子線露光装置、および、デバイス製造方法 |
| EP1753010B1 (en) | 2005-08-09 | 2012-12-05 | Carl Zeiss SMS GmbH | Particle-optical system |
| JP2007231324A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | マルチ荷電ビーム加工装置 |
| KR100809277B1 (ko) * | 2006-07-05 | 2008-03-03 | 삼성전기주식회사 | 어레이 렌즈를 갖는 카메라 모듈 |
| JP5048283B2 (ja) * | 2006-07-20 | 2012-10-17 | キヤノン株式会社 | 偏向器アレイ、描画装置およびデバイス製造方法 |
| US8134135B2 (en) * | 2006-07-25 | 2012-03-13 | Mapper Lithography Ip B.V. | Multiple beam charged particle optical system |
| WO2008013442A1 (en) * | 2006-07-25 | 2008-01-31 | Mapper Lithography Ip B.V. | A multiple beam charged particle optical system |
| JP2008066359A (ja) * | 2006-09-05 | 2008-03-21 | Canon Inc | 荷電ビームレンズアレイ、露光装置及びデバイス製造方法 |
| US7669985B2 (en) * | 2007-04-23 | 2010-03-02 | Xerox Corporation | Jetstack plate to plate alignment |
| EP2019415B1 (en) * | 2007-07-24 | 2016-05-11 | IMS Nanofabrication AG | Multi-beam source |
| EP2251893B1 (en) * | 2009-05-14 | 2014-10-29 | IMS Nanofabrication AG | Multi-beam deflector array means with bonded electrodes |
| JP5669636B2 (ja) * | 2011-03-15 | 2015-02-12 | キヤノン株式会社 | 荷電粒子線レンズおよびそれを用いた露光装置 |
| JP2012195097A (ja) * | 2011-03-15 | 2012-10-11 | Canon Inc | 荷電粒子線レンズおよびそれを用いた露光装置 |
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| JP2013084638A (ja) * | 2011-10-05 | 2013-05-09 | Canon Inc | 静電レンズ |
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| JP2001345259A (ja) | 2001-12-14 |
| US7038226B2 (en) | 2006-05-02 |
| US20050253082A1 (en) | 2005-11-17 |
| US6965153B1 (en) | 2005-11-15 |
| US20030209673A1 (en) | 2003-11-13 |
| US7126141B2 (en) | 2006-10-24 |
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