JP4549996B2 - レーザ照射装置 - Google Patents

レーザ照射装置 Download PDF

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Publication number
JP4549996B2
JP4549996B2 JP2006094484A JP2006094484A JP4549996B2 JP 4549996 B2 JP4549996 B2 JP 4549996B2 JP 2006094484 A JP2006094484 A JP 2006094484A JP 2006094484 A JP2006094484 A JP 2006094484A JP 4549996 B2 JP4549996 B2 JP 4549996B2
Authority
JP
Japan
Prior art keywords
laser beam
laser
irradiation region
reflector
axis direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006094484A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007273539A (ja
Inventor
陵太郎 富樫
俊夫 井波
純一 次田
秀晃 草間
直之 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to JP2006094484A priority Critical patent/JP4549996B2/ja
Priority to TW096101711A priority patent/TW200737352A/zh
Priority to KR1020087023807A priority patent/KR101028598B1/ko
Priority to DE112007000735T priority patent/DE112007000735T5/de
Priority to PCT/JP2007/000079 priority patent/WO2007116576A1/ja
Publication of JP2007273539A publication Critical patent/JP2007273539A/ja
Application granted granted Critical
Publication of JP4549996B2 publication Critical patent/JP4549996B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Semiconductor Lasers (AREA)
JP2006094484A 2006-03-30 2006-03-30 レーザ照射装置 Expired - Fee Related JP4549996B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006094484A JP4549996B2 (ja) 2006-03-30 2006-03-30 レーザ照射装置
TW096101711A TW200737352A (en) 2006-03-30 2007-01-17 Laser irradiation device
KR1020087023807A KR101028598B1 (ko) 2006-03-30 2007-02-13 레이저 조사 장치
DE112007000735T DE112007000735T5 (de) 2006-03-30 2007-02-13 Laserbestrahlungsgerät
PCT/JP2007/000079 WO2007116576A1 (ja) 2006-03-30 2007-02-13 レーザ照射装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006094484A JP4549996B2 (ja) 2006-03-30 2006-03-30 レーザ照射装置

Publications (2)

Publication Number Publication Date
JP2007273539A JP2007273539A (ja) 2007-10-18
JP4549996B2 true JP4549996B2 (ja) 2010-09-22

Family

ID=38580878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006094484A Expired - Fee Related JP4549996B2 (ja) 2006-03-30 2006-03-30 レーザ照射装置

Country Status (5)

Country Link
JP (1) JP4549996B2 (enExample)
KR (1) KR101028598B1 (enExample)
DE (1) DE112007000735T5 (enExample)
TW (1) TW200737352A (enExample)
WO (1) WO2007116576A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140083026A (ko) * 2011-10-27 2014-07-03 어플라이드 머티어리얼스, 인코포레이티드 박막 태양 전지를 위한 레이저 결정화 및 다결정 효율 개선
KR101881423B1 (ko) 2011-11-24 2018-07-25 삼성디스플레이 주식회사 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법
KR101997095B1 (ko) * 2016-07-22 2019-07-08 전자부품연구원 수평 분해능 및 영상획득 프레임이 제어되는 스캐닝 라이다
CN113169502B (zh) * 2019-01-23 2023-09-08 极光先进雷射株式会社 激光加工装置和被加工物的加工方法
JP2023011329A (ja) * 2021-07-12 2023-01-24 住友重機械工業株式会社 アニール装置の制御装置、アニール装置、及びアニール方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPH0410216A (ja) 1990-04-26 1992-01-14 Fuji Photo Film Co Ltd 磁気記録媒体及びその製造方法
JP3825515B2 (ja) * 1996-01-17 2006-09-27 株式会社東芝 液晶表示装置の製造方法
WO2004042806A1 (ja) * 2002-11-05 2004-05-21 Sony Corporation 光照射装置及び光照射方法
JP4583004B2 (ja) * 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法

Also Published As

Publication number Publication date
TWI380369B (enExample) 2012-12-21
KR20080109788A (ko) 2008-12-17
JP2007273539A (ja) 2007-10-18
TW200737352A (en) 2007-10-01
KR101028598B1 (ko) 2011-04-11
WO2007116576A1 (ja) 2007-10-18
DE112007000735T5 (de) 2009-01-22

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