JP4549996B2 - Laser irradiation device - Google Patents
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- JP4549996B2 JP4549996B2 JP2006094484A JP2006094484A JP4549996B2 JP 4549996 B2 JP4549996 B2 JP 4549996B2 JP 2006094484 A JP2006094484 A JP 2006094484A JP 2006094484 A JP2006094484 A JP 2006094484A JP 4549996 B2 JP4549996 B2 JP 4549996B2
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- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000007493 shaping process Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
- B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Recrystallisation Techniques (AREA)
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Description
この発明は、レーザ照射装置に関し、さらに詳しくは、帯状照射領域を長軸方向に高速に動かす位置制御を容易に行うことが出来るレーザ照射装置に関する。 The present invention relates to a laser irradiation apparatus, and more particularly to a laser irradiation apparatus capable of easily performing position control for moving a belt-shaped irradiation region at a high speed in the long axis direction.
従来、帯状照射領域を有する光線ビームを被処理基板に照射する際に、帯状照射領域の短軸方向に光線ビームを走査的に移動すると共に帯状照射領域の長軸方向に帯状照射領域を振動させる半導体装置の製造方法が知られている(例えば特許文献1参照。)。
上記従来技術では、帯状照射領域を長軸方向に振動させるために、被処理基板を保持するXYステージまたはカーボン・ヒータを動かしている。
しかし、XYステージまたはカーボン・ヒータは質量が大きいため、応答が遅く、高速に位置制御することが難しい問題点がある。
そこで、この発明の目的は、帯状照射領域を長軸方向に高速に動かす位置制御を容易に行うことが出来るレーザ照射装置を提供することにある。
In the above prior art, an XY stage or a carbon heater that holds the substrate to be processed is moved in order to vibrate the belt-shaped irradiation region in the long axis direction.
However, since the XY stage or the carbon heater has a large mass, the response is slow and it is difficult to control the position at high speed.
Accordingly, an object of the present invention is to provide a laser irradiation apparatus capable of easily performing position control for moving a belt-shaped irradiation region at a high speed in the major axis direction.
第1の観点では、本発明は、レーザビーム(B1)をパルス出力するレーザ発振器(1)と、前記レーザビーム(B1)を反射する反射器(2)と、前記レーザビーム(B1)が入射する前記反射器(2)の反射面(2b)の前記レーザビーム(B1)に対する角度(θ)または位置の変化により反射ビーム(B2)が動く方向を長軸方向とする帯状照射領域(4)に前記反射ビーム(B2)を整形し半導体基板(S)に照射する光学系(3)と、前記半導体基板(S)を保持して前記帯状照射領域(4)の短軸方向に移動しうる移動台(5)と、前記反射器(2)の角度または位置を変える反射器駆動手段(6)と、帯状照射領域の長軸方向の所定範囲内で帯状照射領域の位置を変えるために前記レーザ発振器(1)でレーザビーム(B1)をパルス出力するタイミングと前記反射器駆動手段(6)で前記反射器(2)の角度または位置を変えるタイミングの調整を行うタイミング制御手段(8)とを具備することを特徴とするレーザ照射装置(100)を提供する。
上記第1の観点によるレーザ照射装置(100)では、反射器(2)を動かすが、従来技術におけるXYステージに相当する移動台(5)または従来技術におけるカーボン・ヒータに相当するレーザ発振器(1)や光学系(3)に比べて反射器(2)の質量が小さいため、高速に動かす位置制御が容易になる。そして、レーザ発振器(1)でレーザビーム(B1)をパルス出力するタイミングと反射器駆動手段(6)で反射器(2)の角度または位置を変えるタイミングの調整をタイミング制御手段(8)で行うことにより、帯状照射領域の長軸方向の所定範囲内で帯状照射領域の位置を変えることが出来る。
In a first aspect, the present invention relates to a laser oscillator (1) that outputs a pulse of a laser beam (B1), a reflector (2) that reflects the laser beam (B1), and the laser beam (B1) incident thereon. A strip-shaped irradiation region (4) whose major axis is the direction in which the reflected beam (B2) moves due to a change in angle (θ) or position of the reflecting surface (2b) of the reflector (2) with respect to the laser beam (B1) An optical system (3) for shaping the reflected beam (B2) and irradiating the semiconductor substrate (S), and holding the semiconductor substrate (S) and moving in the minor axis direction of the belt-like irradiation region (4) The movable table (5), reflector driving means (6) for changing the angle or position of the reflector (2), and the belt-like irradiation region in order to change the position of the belt-like irradiation region within a predetermined range in the major axis direction of the belt-like irradiation region Laser beam (B1) is emitted by laser oscillator (1) A laser irradiation apparatus comprising: a timing control means (8) for adjusting a pulse output timing and a timing for changing an angle or a position of the reflector (2) by the reflector driving means (6). 100).
In the laser irradiation apparatus (100) according to the first aspect, the reflector (2) is moved, but the movable stage (5) corresponding to the XY stage in the prior art or the laser oscillator (1) corresponding to the carbon heater in the prior art. ) And the optical system (3) have a smaller mass of the reflector (2), so that the position control can be easily performed at a high speed. The timing control means (8) adjusts the timing at which the laser beam (B1) is pulsed by the laser oscillator (1) and the timing at which the reflector driving means (6) changes the angle or position of the reflector (2). Thus, the position of the band-shaped irradiation region can be changed within a predetermined range in the major axis direction of the band-shaped irradiation region.
第2の観点では、本発明は、トリガ(G)に応じてレーザビーム(B1)をパルス出力するレーザ発振器(1)と、前記レーザビーム(B1)を反射する回転多角形ミラー(2)と、前記レーザビーム(B1)が入射する前記回転多角形ミラー(2)の反射面(2b)への前記レーザビーム(B1)の入射角(θ)の変化により反射ビーム(B2)が振れる方向を長軸方向とする帯状照射領域(4)に前記反射ビーム(B2)を整形し半導体基板(S)に照射する光学系(3)と、前記半導体基板(S)を保持して前記帯状照射領域(4)の短軸方向に移動しうる移動台(5)と、前記回転多角形ミラー(2)を一定速度で回転させる回転駆動手段(6)と、前記回転多角形ミラー(2)の回転位相情報(Q)を出力する回転位相検出手段(7)と、前記回転位相情報(Q)に基づいて前記トリガ(G)の出力タイミングを所定の時間範囲内で変化させて前記入射角(θ)を所定角度範囲内で変化させるタイミング制御手段(8)とを具備することを特徴とするレーザ照射装置(100)を提供する。
上記第2の観点によるレーザ照射装置(100)では、ミラーの角度を変えたい速度のミラー数分の一の速さで且つ一定速度で回転多角形ミラー(2)を回転させればよいため、実施が容易である。そして、レーザ発振器(1)でレーザビーム(B1)をパルス出力するタイミングを回転多角形ミラー(2)の回転位相に合わせて変えるためタイミング調整も実施が容易である。よって、帯状照射領域の長軸方向の所定範囲内で帯状照射領域の位置を高速に容易に変えることが出来る。
In a second aspect, the present invention relates to a laser oscillator (1) that outputs a laser beam (B1) in response to a trigger (G), and a rotating polygon mirror (2) that reflects the laser beam (B1). The direction in which the reflected beam (B2) swings due to the change in the incident angle (θ) of the laser beam (B1) to the reflecting surface (2b) of the rotating polygon mirror (2) on which the laser beam (B1) is incident. An optical system (3) for shaping the reflected beam (B2) in a strip-shaped irradiation region (4) in the major axis direction and irradiating the semiconductor substrate (S), and holding the semiconductor substrate (S), the strip-shaped irradiation region (4) The movable table (5) capable of moving in the short axis direction, the rotation driving means (6) for rotating the rotating polygon mirror (2) at a constant speed, and the rotation of the rotating polygon mirror (2) Rotation phase detection means (7) for outputting phase information (Q) And a timing control means (8) for changing the output angle of the trigger (G) within a predetermined time range based on the rotational phase information (Q) and changing the incident angle (θ) within a predetermined angle range. A laser irradiation apparatus (100) is provided.
In the laser irradiation apparatus (100) according to the second aspect, the rotating polygon mirror (2) may be rotated at a constant speed and at a speed equal to the number of mirrors at a speed at which the mirror angle is desired to be changed. Easy to implement. Since the timing at which the laser beam (B1) is pulse-outputted by the laser oscillator (1) is changed in accordance with the rotational phase of the rotating polygon mirror (2), timing adjustment is also easy. Therefore, the position of the belt-like irradiation region can be easily changed at high speed within a predetermined range in the major axis direction of the belt-like irradiation region.
この発明のレーザ照射装置によれば、帯状照射領域を長軸方向に高速に動かす位置制御を容易に行うことが出来るので、帯状照射領域の長軸方向のレーザビームの強度ムラや被処理基板の微小な凹凸に起因する帯状照射領域の長手方向の照射ムラを好適に抑制することが出来る。 According to the laser irradiation apparatus of the present invention, it is possible to easily perform position control for moving the belt-shaped irradiation region at a high speed in the long axis direction. Irradiation unevenness in the longitudinal direction of the belt-shaped irradiation region due to minute unevenness can be suitably suppressed.
以下、図に示す実施の形態によりこの発明をさらに詳細に説明する。なお、これによりこの発明が限定されるものではない。 Hereinafter, the present invention will be described in more detail with reference to embodiments shown in the drawings. Note that the present invention is not limited thereby.
図1は、実施例1に係るレーザ照射装置100を示す構成説明図である。
このレーザ照射装置100は、トリガGに応じてレーザビームB1をパルス出力するレーザ発振器1と、レーザビームB1を反射する回転多角形ミラー2と、レーザビームB1が入射する回転多角形ミラー2の反射面2bへのレーザビームB1の入射角θの変化により反射ビームB2が振れる方向を長軸方向とする帯状照射領域4に反射ビームB2を整形し半導体基板Sに照射するためのホモジナイザー3a,ミラー3bおよびレンズ3cと、半導体基板Sを保持して帯状照射領域4の短軸方向に移動しうる移動台5と、回転多角形ミラー2を一定速度で回転させるモータ6と、回転多角形ミラー2の回転位相情報Qを出力するエンコーダ7と、回転位相情報Qに基づいてトリガGの出力タイミングを所定の時間範囲内で変化させるタイミング制御回路8とを具備している。
FIG. 1 is a configuration explanatory diagram illustrating a
The
回転多角形ミラー2の回転軸2aは鉛直方向であり、回転多角形ミラー2は水平面内で回転する。レーザビームB1および反射ビームB2は水平方向である。一方、半導体基板Sは水平に置かれている。このため、ホモジナイザー3aで長軸方向および短軸方向に強度を均一化した反射ビームB1の方向をミラー3bにより水平方向から鉛直方向に変えている。そして、かまぼこ形のレンズ3cで短軸方向について集光して半導体基板Sに照射している。
The rotation axis 2a of the rotating
図2は、タイミング制御回路8の動作を説明するタイミングチャートである。
タイミング制御回路8は、回転位相情報Qに基づいて、入射角θが45゜になるタイミングを示す45゜パルスQ’を生成する。
この45゜パルスQ’の周期τは、回転多角形ミラー2の1回転時間を回転多角形ミラー2のミラー数で除算した値になる。
なお、周期τは、レーザ発振器1でレーザビームB1をパルス出力する平均時間間隔に相当する。また、レーザ発振器1がレーザビームB1をパルス出力する時間つまりパルス幅は、周期τより短い。
FIG. 2 is a timing chart for explaining the operation of the
Based on the rotation phase information Q, the
The period τ of the 45 ° pulse Q ′ is a value obtained by dividing one rotation time of the rotating
The period τ corresponds to an average time interval at which the
帯状照射領域4を長軸方向に動かしたい位置の数を「M+1」とするとき、タイミング制御回路8は、0からMまでの整数の一つmをランダムに発生し、45゜パルスQ’より「τ+(m−M/2)δ/(M/2)」経過時にトリガGを出力する。
時間δの間に反射面2bが回転する角度をαとするとき、入射角θは「45゜−(m−M/2)α/(M/2)」になる。
図2はM=8の例であり、45゜パルスQ’より「τ+(m−4)δ/4」経過時にトリガGを出力し、入射角θは「45゜−(m−4)α/4」になる。
When the number of positions where the strip-
When the angle at which the reflecting surface 2b rotates during the time δ is α, the incident angle θ is “45 ° − (m−M / 2) α / (M / 2)”.
FIG. 2 shows an example in which M = 8. When “τ + (m−4) δ / 4” elapses from the 45 ° pulse Q ′, the trigger G is output, and the incident angle θ is “45 ° − (m−4) α”. / 4 ".
図3は、帯状照射領域4の長軸方向の動きを示す上面図である。
(a)〜(i)は、M=8とした場合のm=0〜m=8に対応している。
帯状照射領域4は、長軸方向照射範囲R内の9カ所の位置にランダムに動くことになる。
帯状照射領域4の長軸方向の長さをLとするとき、帯状照射領域4を「(R−L)/2」だけ動かす入射角θの変化分がαに相当する。
FIG. 3 is a top view showing the movement of the belt-
(A) to (i) correspond to m = 0 to m = 8 when M = 8.
The strip-
When the length in the major axis direction of the belt-
実施例1のレーザ照射装置100によれば、周期τのミラー数倍の時間で回転多角形ミラー2を1回転させればよいので、実施が容易である。また、レーザ発振器1でレーザビームB1をパルス出力する時間間隔は最短「τ−δ」になるが、可動部分がないので、これも実施が容易である。よって、帯状照射領域4の長軸方向の所定範囲R内で帯状照射領域4の位置を高速に動かすことが出来る。
According to the
45゜パルスQ’より「τ−δ」経過後から「τ+δ」経過後までの時間範囲内でランダムにトリガGを出力してもよい。 The trigger G may be output at random within the time range from the lapse of “τ−δ” to the lapse of “τ + δ” from the 45 ° pulse Q ′.
回転多角形ミラー2の代わりに、レーザビームB1の方向に往復振動するミラーを用いてもよい。この場合、振動位相に合わせてトリガGの出力タイミングを変化させる。
Instead of the rotating
回転多角形ミラー2の代わりに、所定角度範囲で揺動振動するガルバノミラーを用いてもよい。この場合、ガルバノミラーの揺動位相に合わせてトリガGの出力タイミングを変化させる。
Instead of the rotating
回転多角形ミラー2の代わりにガルバノミラーを用い、トリガGを一定周期で出力し、トリガGごとにガルバノミラーの角度を所定角度範囲でランダムに変化させてもよい。
A galvano mirror may be used instead of the rotating
この発明のレーザ照射方法およびレーザ照射装置は、例えば半導体層の作製や活性化処理に利用できる。 The laser irradiation method and laser irradiation apparatus of the present invention can be used, for example, for the production of a semiconductor layer and activation processing.
1 レーザ発振器
2 回転多角形ミラー
3a ホモジナイザー
3b ミラー
3c レンズ
4 帯状照射領域
5 移動台
6 モータ
7 エンコーダ
8 タイミング制御回路
100 レーザ照射装置
DESCRIPTION OF
Claims (2)
A laser oscillator (1) that outputs a laser beam (B1) in response to a trigger (G), a rotating polygon mirror (2) that reflects the laser beam (B1), and the laser beam (B1) are incident. A strip-shaped irradiation region (4) in which the major axis direction is the direction in which the reflected beam (B2) swings due to the change in the incident angle (θ) of the laser beam (B1) to the reflecting surface (2b) of the rotating polygon mirror (2). ) And the optical system (3) for shaping the reflected beam (B2) and irradiating the semiconductor substrate (S), and holding the semiconductor substrate (S) and moving it in the minor axis direction of the band-like irradiation region (4). A movable stage (5), a rotation driving means (6) for rotating the rotating polygon mirror (2) at a constant speed, and a rotation phase for outputting rotation phase information (Q) of the rotating polygon mirror (2). A detecting means (7) and the rotational phase information (Q And a timing control means (8) for changing the incident angle (θ) within a predetermined angle range by changing the output timing of the trigger (G) within a predetermined time range based on Laser irradiation apparatus (100).
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2006094484A JP4549996B2 (en) | 2006-03-30 | 2006-03-30 | Laser irradiation device |
TW096101711A TW200737352A (en) | 2006-03-30 | 2007-01-17 | Laser irradiation device |
DE112007000735T DE112007000735T5 (en) | 2006-03-30 | 2007-02-13 | Laser irradiation apparatus |
KR1020087023807A KR101028598B1 (en) | 2006-03-30 | 2007-02-13 | Laser irradiation device |
PCT/JP2007/000079 WO2007116576A1 (en) | 2006-03-30 | 2007-02-13 | Laser irradiation device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006094484A JP4549996B2 (en) | 2006-03-30 | 2006-03-30 | Laser irradiation device |
Publications (2)
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JP2007273539A JP2007273539A (en) | 2007-10-18 |
JP4549996B2 true JP4549996B2 (en) | 2010-09-22 |
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Family Applications (1)
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JP2006094484A Expired - Fee Related JP4549996B2 (en) | 2006-03-30 | 2006-03-30 | Laser irradiation device |
Country Status (5)
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JP (1) | JP4549996B2 (en) |
KR (1) | KR101028598B1 (en) |
DE (1) | DE112007000735T5 (en) |
TW (1) | TW200737352A (en) |
WO (1) | WO2007116576A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013109328A2 (en) * | 2011-10-27 | 2013-07-25 | Applied Materials, Inc. | Laser crystallization and polycrystal efficiency improvement for thin film solar |
KR101881423B1 (en) | 2011-11-24 | 2018-07-25 | 삼성디스플레이 주식회사 | Crystallization apparatus, crystallization method, organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus |
KR101997095B1 (en) * | 2016-07-22 | 2019-07-08 | 전자부품연구원 | Scanning lidar for controlling horizontal resolution and image acquisition frame |
WO2020152796A1 (en) * | 2019-01-23 | 2020-07-30 | ギガフォトン株式会社 | Laser processing device and method for processing workpiece |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
JPH09260684A (en) * | 1996-01-17 | 1997-10-03 | Toshiba Corp | Manufacture of liquid crystal display |
WO2004042806A1 (en) * | 2002-11-05 | 2004-05-21 | Sony Corporation | Light irradiator and light irradiating method |
JP2004349415A (en) * | 2003-05-21 | 2004-12-09 | Hitachi Ltd | Method of manufacturing active matrix substrate, and image display apparatus using same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0410216A (en) | 1990-04-26 | 1992-01-14 | Fuji Photo Film Co Ltd | Magnetic recording medium and its production |
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2006
- 2006-03-30 JP JP2006094484A patent/JP4549996B2/en not_active Expired - Fee Related
-
2007
- 2007-01-17 TW TW096101711A patent/TW200737352A/en not_active IP Right Cessation
- 2007-02-13 WO PCT/JP2007/000079 patent/WO2007116576A1/en active Application Filing
- 2007-02-13 DE DE112007000735T patent/DE112007000735T5/en not_active Withdrawn
- 2007-02-13 KR KR1020087023807A patent/KR101028598B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
JPH09260684A (en) * | 1996-01-17 | 1997-10-03 | Toshiba Corp | Manufacture of liquid crystal display |
WO2004042806A1 (en) * | 2002-11-05 | 2004-05-21 | Sony Corporation | Light irradiator and light irradiating method |
JP2004349415A (en) * | 2003-05-21 | 2004-12-09 | Hitachi Ltd | Method of manufacturing active matrix substrate, and image display apparatus using same |
Also Published As
Publication number | Publication date |
---|---|
DE112007000735T5 (en) | 2009-01-22 |
TW200737352A (en) | 2007-10-01 |
WO2007116576A1 (en) | 2007-10-18 |
TWI380369B (en) | 2012-12-21 |
KR101028598B1 (en) | 2011-04-11 |
KR20080109788A (en) | 2008-12-17 |
JP2007273539A (en) | 2007-10-18 |
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