DE112007000735T5 - Laserbestrahlungsgerät - Google Patents

Laserbestrahlungsgerät Download PDF

Info

Publication number
DE112007000735T5
DE112007000735T5 DE112007000735T DE112007000735T DE112007000735T5 DE 112007000735 T5 DE112007000735 T5 DE 112007000735T5 DE 112007000735 T DE112007000735 T DE 112007000735T DE 112007000735 T DE112007000735 T DE 112007000735T DE 112007000735 T5 DE112007000735 T5 DE 112007000735T5
Authority
DE
Germany
Prior art keywords
laser beam
reflector
band
irradiation
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112007000735T
Other languages
German (de)
English (en)
Inventor
Ryotaro Yokohama-shi Togashi
Toshio Yokohama-shi Inami
Junichi Yokohama-shi Shida
Hideaki Yokohama-shi Kusama
Naoyuki Yokohama-shi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of DE112007000735T5 publication Critical patent/DE112007000735T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Semiconductor Lasers (AREA)
DE112007000735T 2006-03-30 2007-02-13 Laserbestrahlungsgerät Withdrawn DE112007000735T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006-094484 2006-03-30
JP2006094484A JP4549996B2 (ja) 2006-03-30 2006-03-30 レーザ照射装置
PCT/JP2007/000079 WO2007116576A1 (ja) 2006-03-30 2007-02-13 レーザ照射装置

Publications (1)

Publication Number Publication Date
DE112007000735T5 true DE112007000735T5 (de) 2009-01-22

Family

ID=38580878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112007000735T Withdrawn DE112007000735T5 (de) 2006-03-30 2007-02-13 Laserbestrahlungsgerät

Country Status (5)

Country Link
JP (1) JP4549996B2 (enExample)
KR (1) KR101028598B1 (enExample)
DE (1) DE112007000735T5 (enExample)
TW (1) TW200737352A (enExample)
WO (1) WO2007116576A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9209347B2 (en) * 2011-10-27 2015-12-08 Applied Materials, Inc. Laser crystallization and polycrystal efficiency improvement for thin film solar
KR101881423B1 (ko) 2011-11-24 2018-07-25 삼성디스플레이 주식회사 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법
KR101997095B1 (ko) * 2016-07-22 2019-07-08 전자부품연구원 수평 분해능 및 영상획득 프레임이 제어되는 스캐닝 라이다
JP7270652B2 (ja) * 2019-01-23 2023-05-10 ギガフォトン株式会社 レーザ加工装置及び被加工物の加工方法
JP2023011329A (ja) * 2021-07-12 2023-01-24 住友重機械工業株式会社 アニール装置の制御装置、アニール装置、及びアニール方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410216A (ja) 1990-04-26 1992-01-14 Fuji Photo Film Co Ltd 磁気記録媒体及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JP3825515B2 (ja) * 1996-01-17 2006-09-27 株式会社東芝 液晶表示装置の製造方法
EP1566834A1 (en) * 2002-11-05 2005-08-24 Sony Corporation Light irradiator and light irradiating method
JP4583004B2 (ja) * 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410216A (ja) 1990-04-26 1992-01-14 Fuji Photo Film Co Ltd 磁気記録媒体及びその製造方法

Also Published As

Publication number Publication date
TWI380369B (enExample) 2012-12-21
WO2007116576A1 (ja) 2007-10-18
JP2007273539A (ja) 2007-10-18
JP4549996B2 (ja) 2010-09-22
TW200737352A (en) 2007-10-01
KR20080109788A (ko) 2008-12-17
KR101028598B1 (ko) 2011-04-11

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: G02B 26/12 AFI20070213BHDE

R016 Response to examination communication
R120 Application withdrawn or ip right abandoned