TWI380369B - - Google Patents
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- Publication number
- TWI380369B TWI380369B TW096101711A TW96101711A TWI380369B TW I380369 B TWI380369 B TW I380369B TW 096101711 A TW096101711 A TW 096101711A TW 96101711 A TW96101711 A TW 96101711A TW I380369 B TWI380369 B TW I380369B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser
- laser beam
- reflector
- strip
- axis direction
- Prior art date
Links
- 238000005286 illumination Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000013589 supplement Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
- B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
- Recrystallisation Techniques (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006094484A JP4549996B2 (ja) | 2006-03-30 | 2006-03-30 | レーザ照射装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200737352A TW200737352A (en) | 2007-10-01 |
| TWI380369B true TWI380369B (enExample) | 2012-12-21 |
Family
ID=38580878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096101711A TW200737352A (en) | 2006-03-30 | 2007-01-17 | Laser irradiation device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4549996B2 (enExample) |
| KR (1) | KR101028598B1 (enExample) |
| DE (1) | DE112007000735T5 (enExample) |
| TW (1) | TW200737352A (enExample) |
| WO (1) | WO2007116576A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140083026A (ko) * | 2011-10-27 | 2014-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 태양 전지를 위한 레이저 결정화 및 다결정 효율 개선 |
| KR101881423B1 (ko) | 2011-11-24 | 2018-07-25 | 삼성디스플레이 주식회사 | 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 |
| KR101997095B1 (ko) * | 2016-07-22 | 2019-07-08 | 전자부품연구원 | 수평 분해능 및 영상획득 프레임이 제어되는 스캐닝 라이다 |
| CN113169502B (zh) * | 2019-01-23 | 2023-09-08 | 极光先进雷射株式会社 | 激光加工装置和被加工物的加工方法 |
| JP2023011329A (ja) * | 2021-07-12 | 2023-01-24 | 住友重機械工業株式会社 | アニール装置の制御装置、アニール装置、及びアニール方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
| JPH0410216A (ja) | 1990-04-26 | 1992-01-14 | Fuji Photo Film Co Ltd | 磁気記録媒体及びその製造方法 |
| JP3825515B2 (ja) * | 1996-01-17 | 2006-09-27 | 株式会社東芝 | 液晶表示装置の製造方法 |
| WO2004042806A1 (ja) * | 2002-11-05 | 2004-05-21 | Sony Corporation | 光照射装置及び光照射方法 |
| JP4583004B2 (ja) * | 2003-05-21 | 2010-11-17 | 株式会社 日立ディスプレイズ | アクティブ・マトリクス基板の製造方法 |
-
2006
- 2006-03-30 JP JP2006094484A patent/JP4549996B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-17 TW TW096101711A patent/TW200737352A/zh not_active IP Right Cessation
- 2007-02-13 KR KR1020087023807A patent/KR101028598B1/ko active Active
- 2007-02-13 WO PCT/JP2007/000079 patent/WO2007116576A1/ja not_active Ceased
- 2007-02-13 DE DE112007000735T patent/DE112007000735T5/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080109788A (ko) | 2008-12-17 |
| JP2007273539A (ja) | 2007-10-18 |
| TW200737352A (en) | 2007-10-01 |
| KR101028598B1 (ko) | 2011-04-11 |
| WO2007116576A1 (ja) | 2007-10-18 |
| JP4549996B2 (ja) | 2010-09-22 |
| DE112007000735T5 (de) | 2009-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |