KR101881423B1 - 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 - Google Patents

결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 Download PDF

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Publication number
KR101881423B1
KR101881423B1 KR1020110123663A KR20110123663A KR101881423B1 KR 101881423 B1 KR101881423 B1 KR 101881423B1 KR 1020110123663 A KR1020110123663 A KR 1020110123663A KR 20110123663 A KR20110123663 A KR 20110123663A KR 101881423 B1 KR101881423 B1 KR 101881423B1
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KR
South Korea
Prior art keywords
light emitting
organic light
emitting display
crystallization
display apparatus
Prior art date
Application number
KR1020110123663A
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English (en)
Other versions
KR20130057759A (ko
Inventor
김태용
김준형
류제길
김성곤
김필규
Original Assignee
삼성디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020110123663A priority Critical patent/KR101881423B1/ko
Priority to US13/627,094 priority patent/US10103180B2/en
Publication of KR20130057759A publication Critical patent/KR20130057759A/ko
Application granted granted Critical
Publication of KR101881423B1 publication Critical patent/KR101881423B1/ko

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/082Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/127Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
KR1020110123663A 2011-11-24 2011-11-24 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 KR101881423B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020110123663A KR101881423B1 (ko) 2011-11-24 2011-11-24 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법
US13/627,094 US10103180B2 (en) 2011-11-24 2012-09-26 Crystallization apparatus, crystallizing method, and method of manufacturing organic light-emitting display apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110123663A KR101881423B1 (ko) 2011-11-24 2011-11-24 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20130057759A KR20130057759A (ko) 2013-06-03
KR101881423B1 true KR101881423B1 (ko) 2018-07-25

Family

ID=48467240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110123663A KR101881423B1 (ko) 2011-11-24 2011-11-24 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법

Country Status (2)

Country Link
US (1) US10103180B2 (ko)
KR (1) KR101881423B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102302777B1 (ko) * 2014-08-05 2021-09-15 삼성디스플레이 주식회사 레이저 결정화 장치
KR102440115B1 (ko) * 2015-11-13 2022-09-05 삼성디스플레이 주식회사 엑시머 레이저 어닐링 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200503057A (en) * 2003-06-11 2005-01-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus
JP2005236253A (ja) * 2004-01-22 2005-09-02 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置及び結晶化方法
KR100603330B1 (ko) * 2004-02-16 2006-07-20 삼성에스디아이 주식회사 레이저 결정화 장치
US20050237895A1 (en) * 2004-04-23 2005-10-27 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
JP2006005148A (ja) 2004-06-17 2006-01-05 Sharp Corp 半導体薄膜の製造方法および製造装置
KR100761077B1 (ko) * 2005-05-12 2007-09-21 삼성에스디아이 주식회사 유기 전계발광 표시장치
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
JP4549996B2 (ja) 2006-03-30 2010-09-22 株式会社日本製鋼所 レーザ照射装置
US7674999B2 (en) * 2006-08-23 2010-03-09 Applied Materials, Inc. Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
US8170072B2 (en) 2008-01-07 2012-05-01 Ihi Corporation Laser annealing method and apparatus
KR101001551B1 (ko) 2008-06-18 2010-12-17 삼성모바일디스플레이주식회사 레이저 어닐링 장치
US8797328B2 (en) 2010-07-23 2014-08-05 Mixamo, Inc. Automatic generation of 3D character animation from 3D meshes

Also Published As

Publication number Publication date
US10103180B2 (en) 2018-10-16
US20130137204A1 (en) 2013-05-30
KR20130057759A (ko) 2013-06-03

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