KR101881423B1 - 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 - Google Patents
결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 Download PDFInfo
- Publication number
- KR101881423B1 KR101881423B1 KR1020110123663A KR20110123663A KR101881423B1 KR 101881423 B1 KR101881423 B1 KR 101881423B1 KR 1020110123663 A KR1020110123663 A KR 1020110123663A KR 20110123663 A KR20110123663 A KR 20110123663A KR 101881423 B1 KR101881423 B1 KR 101881423B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- organic light
- emitting display
- crystallization
- display apparatus
- Prior art date
Links
- 238000002425 crystallisation Methods 0.000 title 2
- 230000008025 crystallization Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110123663A KR101881423B1 (ko) | 2011-11-24 | 2011-11-24 | 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 |
US13/627,094 US10103180B2 (en) | 2011-11-24 | 2012-09-26 | Crystallization apparatus, crystallizing method, and method of manufacturing organic light-emitting display apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110123663A KR101881423B1 (ko) | 2011-11-24 | 2011-11-24 | 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130057759A KR20130057759A (ko) | 2013-06-03 |
KR101881423B1 true KR101881423B1 (ko) | 2018-07-25 |
Family
ID=48467240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110123663A KR101881423B1 (ko) | 2011-11-24 | 2011-11-24 | 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10103180B2 (ko) |
KR (1) | KR101881423B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102302777B1 (ko) * | 2014-08-05 | 2021-09-15 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
KR102440115B1 (ko) * | 2015-11-13 | 2022-09-05 | 삼성디스플레이 주식회사 | 엑시머 레이저 어닐링 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200503057A (en) * | 2003-06-11 | 2005-01-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus |
JP2005236253A (ja) * | 2004-01-22 | 2005-09-02 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化装置及び結晶化方法 |
KR100603330B1 (ko) * | 2004-02-16 | 2006-07-20 | 삼성에스디아이 주식회사 | 레이저 결정화 장치 |
US20050237895A1 (en) * | 2004-04-23 | 2005-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
JP2006005148A (ja) | 2004-06-17 | 2006-01-05 | Sharp Corp | 半導体薄膜の製造方法および製造装置 |
KR100761077B1 (ko) * | 2005-05-12 | 2007-09-21 | 삼성에스디아이 주식회사 | 유기 전계발광 표시장치 |
JP2009518864A (ja) * | 2005-12-05 | 2009-05-07 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 膜を加工するためのシステム及び方法並びに薄膜 |
JP4549996B2 (ja) | 2006-03-30 | 2010-09-22 | 株式会社日本製鋼所 | レーザ照射装置 |
US7674999B2 (en) * | 2006-08-23 | 2010-03-09 | Applied Materials, Inc. | Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system |
US8170072B2 (en) | 2008-01-07 | 2012-05-01 | Ihi Corporation | Laser annealing method and apparatus |
KR101001551B1 (ko) | 2008-06-18 | 2010-12-17 | 삼성모바일디스플레이주식회사 | 레이저 어닐링 장치 |
US8797328B2 (en) | 2010-07-23 | 2014-08-05 | Mixamo, Inc. | Automatic generation of 3D character animation from 3D meshes |
-
2011
- 2011-11-24 KR KR1020110123663A patent/KR101881423B1/ko active IP Right Grant
-
2012
- 2012-09-26 US US13/627,094 patent/US10103180B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US10103180B2 (en) | 2018-10-16 |
US20130137204A1 (en) | 2013-05-30 |
KR20130057759A (ko) | 2013-06-03 |
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