Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/08—Devices involving relative movement between laser beam and workpiece
  • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
  • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
  • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/08—Devices involving relative movement between laser beam and workpiece
  • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
  • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2101/00—Articles made by soldering, welding or cutting
  • B23K2101/36—Electric or electronic devices
  • B23K2101/40—Semiconductor devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Definitions

• the present invention relates to a laser irradiation apparatus, and more particularly, to a laser irradiation apparatus capable of easily performing position control for moving a band-shaped irradiation region at a high speed in the long axis direction.
• Patent Document 1 Japanese Patent Publication No. 04-1 021 6
• an XY stage or a carbon heater that holds the substrate to be processed is moved in order to vibrate the belt-shaped irradiation region in the long axis direction.
• an object of the present invention is to provide a laser irradiation apparatus capable of easily performing position control for moving the belt-shaped irradiation region at a high speed in the long axis direction.
• the present invention provides a laser oscillator (1) that outputs a pulse of a laser beam (B 1), a reflector (2) that reflects the laser beam (B 1), and the laser described above Direction of movement of the reflection beam (B2) due to a change in the angle ( ⁇ ) or position of the reflection surface (2 b) of the reflector (2) with respect to the laser beam (B 1) on which the beam (B 1) is incident
• a reflector (5) that holds the conductor substrate (S) and can move in the short axis direction of the strip-shaped irradiation region (4), and a reflector driving means (6) that changes the angle or position of the reflector (2).
• a laser irradiation device (100) is provided.
• the reflector (2) is moved, but the movable stage (5) corresponding to the XY stage in the prior art or the laser oscillator corresponding to the carbon heater in the prior art ( Since the mass of the reflector (2) is smaller than that of the optical system (1) and the optical system (3), position control that moves at high speed becomes easy.
• the timing control means (8) adjusts the timing at which the laser beam (B 1) is pulsed by the laser oscillator (1) and the timing at which the reflector driving means (6) changes the angle or position of the reflector (2). ),
• the position of the belt-like irradiation region can be changed within a predetermined range in the long axis direction of the belt-like irradiation region.
• the present invention relates to a laser oscillator (1) that outputs a laser beam (B 1) in response to a trigger (G), and a rotating polygon mirror that reflects the laser beam (B 1) ( 2) and the change of the incident angle (0) of the laser beam (B 1) to the reflecting surface (2 b) of the rotating polygon mirror (2) on which the laser beam (B 1) is incident.
• the output timing of the trigger (G) based on the Q) vary within time range of a predetermined tie varying the incident angle (0) within a predetermined angular range
• the rotating polygon mirror (2) may be rotated at a constant speed at a speed equal to the number of mirrors whose speed is desired to change. Therefore, implementation is easy. Since the timing at which the laser beam (B 1) is output by the laser oscillator (1) is changed in accordance with the rotational phase of the rotating polygon mirror (2), the timing adjustment is also easy. Therefore, the position of the band-shaped irradiation region can be easily changed at high speed within a predetermined range in the major axis direction of the band-shaped irradiation region.
• the laser irradiation apparatus of the present invention since the position control for moving the belt-shaped irradiation region in the long axis direction at high speed can be easily performed, the intensity unevenness of the laser beam in the long axis direction of the belt-shaped irradiation region And uneven irradiation in the longitudinal direction of the belt-shaped irradiation region due to minute unevenness of the substrate to be processed can be suitably suppressed.
• FIG. 1 is a diagram illustrating the configuration of a laser irradiation apparatus according to a first embodiment.
• FIG. 2 A timing chart showing the operation of the timing control circuit according to the first embodiment.
• FIG. 3 is a top view showing the position of the belt-shaped irradiation region in the long axis direction.
• FIG. 1 is a configuration explanatory diagram illustrating a laser irradiation apparatus 100 according to the first embodiment.
• This laser irradiation device 100 has a laser oscillator 1 that outputs a pulse of a laser beam B 1 in response to a trigger G, a rotating polygon mirror 1 that reflects the laser beam B 1, and a laser beam B 1 incident thereon.
• the semiconductor substrate is formed by shaping the reflected beam B 2 into a strip-shaped irradiation region 4 whose major axis is the direction in which the reflected beam B 2 oscillates due to a change in the incident angle 0 of the laser beam B 1 on the reflecting surface 2 b of the rotating polygon mirror 2.
• a motor 6 that rotates at a constant speed
• an encoder 7 that outputs rotational phase information Q of the rotating polygon mirror 2
• a timing control that changes the output timing of the trigger G within a predetermined time range based on the rotational phase information Q Circuit 8 and It is Bei.
• the rotation axis 2a of the rotating polygon mirror 2 is in the vertical direction, and the rotating polygon mirror 2 rotates in a horizontal plane.
• Laser beam B 1 and reflected beam B 2 are horizontal.
• the semiconductor substrate S is placed horizontally. Therefore, the direction of the reflected beam B 1 whose intensity is made uniform in the major axis direction and the minor axis direction by the homogenizer 3 a is changed from the horizontal direction to the vertical direction by the mirror 3 b. Then, it is condensed in the short axis direction by the kamaboko-shaped lens 3c and irradiated onto the semiconductor substrate S.
• FIG. 2 is a timing chart for explaining the operation of the timing control circuit 8. Based on the rotational phase information Q, the timing control circuit 8 generates a 45 ° pulse Q ′ indicating the timing at which the incident angle 6 is 45 °.
• the period of this 45 ° pulse Q ' is the value obtained by dividing the rotation time of rotating polygon mirror 2 by the number of rotating polygon mirror 2 mirrors.
• the period corresponds to an average time interval at which the laser oscillator 1 outputs a pulse of the laser beam B1.
• the time during which the laser oscillator 1 outputs the laser beam B 1 as a pulse is shorter than the period ⁇ .
• the timing control circuit 8 randomly generates one of the integers from 0 to 45, 45 ° Trigger G is output when “r + (m_MZ2) (MZ2)” elapses from pulse Q '.
• the trigger G is output and the incident angle 0 becomes “45 ° _ (m_4) Q? Z4”.
• FIG. 3 is a top view showing the movement of the belt-shaped irradiation region 4 in the long axis direction.
• the rotation polygon mirror 2 only needs to be rotated once in a time that is several times the number of mirrors of the period ⁇ .
• the time interval for pulse output of the laser beam B 1 by the laser oscillator 1 is the shortest “__S”, but this is also easy to implement because there are no moving parts. Therefore, the position of the strip-shaped irradiation region 4 can be moved at high speed within the predetermined range R in the major axis direction of the strip-shaped irradiation region 4.
• Trigger G may be output randomly within the time range from the elapse of “r_S” to the elapse of 4 ° from pulse Q '.
• a mirror that reciprocally vibrates in the direction of the laser beam ⁇ 1 may be used. In this case, change the output timing of trigger G according to the vibration phase.
• a galvano mirror that oscillates and oscillates within a predetermined angle range may be used.
• the output timing of the trigger G is changed according to the oscillation phase of the galvanometer mirror.
• a galvano mirror may be used instead of the rotating polygon mirror 2, the trigger G may be output at a constant period, and the angle of the galvano mirror may be changed randomly within a predetermined angular range for each rig G.
• the laser irradiation method and the laser irradiation apparatus of the present invention can be used for, for example, production of a semiconductor layer and activation processing.

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Mechanical Engineering (AREA)
• Computer Hardware Design (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Laser Beam Processing (AREA)
• Lasers (AREA)
• Recrystallisation Techniques (AREA)
• Mechanical Light Control Or Optical Switches (AREA)
• Semiconductor Lasers (AREA)

Priority Applications (1)

Applications Claiming Priority (2)

Publications (1)

Family

ID=38580878

Family Applications (1)

Country Status (5)

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Citations (4)

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• 2006
  • 2006-03-30 JP JP2006094484A patent/JP4549996B2/ja not_active Expired - Fee Related
• 2007
  • 2007-01-17 TW TW096101711A patent/TW200737352A/zh not_active IP Right Cessation
  • 2007-02-13 KR KR1020087023807A patent/KR101028598B1/ko active Active
  • 2007-02-13 WO PCT/JP2007/000079 patent/WO2007116576A1/ja not_active Ceased
  • 2007-02-13 DE DE112007000735T patent/DE112007000735T5/de not_active Withdrawn

Patent Citations (4)

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