JP4511441B2 - 感度可変型撮像素子及びこれを搭載した撮像装置 - Google Patents
感度可変型撮像素子及びこれを搭載した撮像装置 Download PDFInfo
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- JP4511441B2 JP4511441B2 JP2005288861A JP2005288861A JP4511441B2 JP 4511441 B2 JP4511441 B2 JP 4511441B2 JP 2005288861 A JP2005288861 A JP 2005288861A JP 2005288861 A JP2005288861 A JP 2005288861A JP 4511441 B2 JP4511441 B2 JP 4511441B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14667—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/80—Camera processing pipelines; Components thereof
- H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
Description
10 オートホワイトバランス(AWB)用積算回路
14 印加電圧調整回路
30 半導体基板
31,32,33 信号電荷蓄積部(ダイオード部)
41 赤色(R)用画素電極層
42 縦配線
43 赤色(R)用の感光層
44 赤色(R)用の対向電極層
46 緑色(G)用の画素電極層
47 緑色(G)用の感光層
48 緑色(G)用の対向電極層
50 青色(B)用の画素電極層
51 青色(B)用の感光層
52 青色(B)用の対向電極層
Claims (3)
- 基板と、該基板の上層に積層される3層の感光層であって第1の画素電極層と第1の対向電極層との間に挟まれ赤色光に受光感度を有する第1の感光層及び第2の画素電極層と第2の対向電極層との間に挟まれ緑色光に受光感度を有する第2の感光層及び第3の画素電極層と第3の対向電極層との間に挟まれ青色光に受光感度を有する第3の感光層と、前記基板上に形成され前記感光層に光が入射することで発生した光電荷に応じた信号を読み出す信号読出手段と、前記画素電極層と前記対向電極層との間に感度可変用電圧を印加する電圧印加手段とを備える感度可変型撮像素子を搭載する撮像装置であって、前記電圧印加手段が前記3層の感光層を挟む各々の前記画素電極層と前記対向電極層との間に印加する電圧を制御することで前記感度可変型撮像素子から出力される赤色,緑色,青色の画像信号を制御しホワイトバランス調整を行う印加電圧調整手段を備えることを特徴とする撮像装置。
- 前記基板が半導体基板であり、前記信号読出手段が、所定位置の画素の前記光電荷を転送するための電荷転送部を有する素子、あるいは、所定位置の画素における前記光電荷に応じた信号を選択的に読み出すための読み出し機構を備える素子を含む請求項1に記載の撮像装置。
- 前記基板が可撓性を有することを特徴とする請求項1または請求項2に記載の撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005288861A JP4511441B2 (ja) | 2005-09-30 | 2005-09-30 | 感度可変型撮像素子及びこれを搭載した撮像装置 |
US11/527,393 US7663682B2 (en) | 2005-09-30 | 2006-09-27 | Variable sensitivity imaging device including a voltage applying section, and imaging apparatus including the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005288861A JP4511441B2 (ja) | 2005-09-30 | 2005-09-30 | 感度可変型撮像素子及びこれを搭載した撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007104113A JP2007104113A (ja) | 2007-04-19 |
JP4511441B2 true JP4511441B2 (ja) | 2010-07-28 |
Family
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JP2005288861A Expired - Fee Related JP4511441B2 (ja) | 2005-09-30 | 2005-09-30 | 感度可変型撮像素子及びこれを搭載した撮像装置 |
Country Status (2)
Country | Link |
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US (1) | US7663682B2 (ja) |
JP (1) | JP4511441B2 (ja) |
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JP2009065156A (ja) * | 2007-09-06 | 2009-03-26 | Dongbu Hitek Co Ltd | イメージセンサーの製造方法 |
JP2009065160A (ja) * | 2007-09-06 | 2009-03-26 | Dongbu Hitek Co Ltd | イメージセンサ及びその製造方法 |
JP2009065155A (ja) * | 2007-09-06 | 2009-03-26 | Dongbu Hitek Co Ltd | イメージセンサー |
JP2009065161A (ja) * | 2007-09-07 | 2009-03-26 | Dongbu Hitek Co Ltd | イメージセンサ及びその製造方法 |
KR100997299B1 (ko) * | 2007-09-07 | 2010-11-29 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
DE102008046035A1 (de) * | 2007-09-07 | 2009-04-16 | Dongbu Hitek Co., Ltd. | Bildsensor und Verfahren zu seiner Herstellung |
KR100882990B1 (ko) * | 2007-12-27 | 2009-02-12 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR100922924B1 (ko) * | 2007-12-28 | 2009-10-22 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
JP5364306B2 (ja) * | 2008-06-24 | 2013-12-11 | 富士フイルム株式会社 | 固体撮像素子及び撮像装置 |
KR100997343B1 (ko) | 2008-07-29 | 2010-11-29 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR101002158B1 (ko) | 2008-07-29 | 2010-12-17 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
IT1393542B1 (it) * | 2009-03-30 | 2012-04-27 | Milano Politecnico | Foto-rivelatore e metodo per rivelare una radiazione ottica |
JP5325750B2 (ja) * | 2009-11-19 | 2013-10-23 | 富士フイルム株式会社 | 固体撮像素子、撮像装置 |
US8736733B2 (en) * | 2010-03-19 | 2014-05-27 | Invisage Technologies, Inc. | Dark current reduction in image sensors via dynamic electrical biasing |
JP5891451B2 (ja) * | 2010-12-22 | 2016-03-23 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JP2015050446A (ja) | 2013-09-05 | 2015-03-16 | ソニー株式会社 | 撮像素子および撮像装置 |
US10104322B2 (en) | 2014-07-31 | 2018-10-16 | Invisage Technologies, Inc. | Image sensors with noise reduction |
US9992436B2 (en) * | 2014-08-04 | 2018-06-05 | Invisage Technologies, Inc. | Scaling down pixel sizes in image sensors |
US10141354B2 (en) | 2014-10-23 | 2018-11-27 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device and image acquisition device |
EP3833004A1 (en) | 2015-07-10 | 2021-06-09 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
WO2017094229A1 (ja) * | 2015-12-03 | 2017-06-08 | パナソニックIpマネジメント株式会社 | 撮像装置 |
US10038019B2 (en) * | 2015-12-29 | 2018-07-31 | Industrial Technology Research Institute | Image sensor and manufacturing method thereof |
WO2018025544A1 (ja) | 2016-08-05 | 2018-02-08 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JPWO2018025545A1 (ja) | 2016-08-05 | 2019-05-30 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JP6739066B2 (ja) | 2016-09-30 | 2020-08-12 | パナソニックIpマネジメント株式会社 | 撮像制御装置、撮像制御方法、プログラムおよびそれを記録した記録媒体 |
JP7000020B2 (ja) | 2016-11-30 | 2022-01-19 | キヤノン株式会社 | 光電変換装置、撮像システム |
JP7108856B2 (ja) | 2017-01-25 | 2022-07-29 | パナソニックIpマネジメント株式会社 | 運転制御システムおよび運転制御方法 |
JP6910009B2 (ja) | 2017-02-03 | 2021-07-28 | パナソニックIpマネジメント株式会社 | 撮像装置およびカメラシステム |
WO2018159002A1 (ja) * | 2017-02-28 | 2018-09-07 | パナソニックIpマネジメント株式会社 | 撮像システム及び撮像方法 |
US10425601B1 (en) | 2017-05-05 | 2019-09-24 | Invisage Technologies, Inc. | Three-transistor active reset pixel |
TWI649865B (zh) | 2017-09-06 | 2019-02-01 | 財團法人工業技術研究院 | 影像感測器及其製造方法 |
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2005
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-
2006
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Also Published As
Publication number | Publication date |
---|---|
US20070076093A1 (en) | 2007-04-05 |
JP2007104113A (ja) | 2007-04-19 |
US7663682B2 (en) | 2010-02-16 |
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