JP4505036B2 - 集積回路デバイスの製造方法 - Google Patents
集積回路デバイスの製造方法 Download PDFInfo
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- JP4505036B2 JP4505036B2 JP2009143777A JP2009143777A JP4505036B2 JP 4505036 B2 JP4505036 B2 JP 4505036B2 JP 2009143777 A JP2009143777 A JP 2009143777A JP 2009143777 A JP2009143777 A JP 2009143777A JP 4505036 B2 JP4505036 B2 JP 4505036B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title description 41
- 239000000758 substrate Substances 0.000 claims description 144
- 239000004065 semiconductor Substances 0.000 claims description 44
- 239000010409 thin film Substances 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 16
- 229910052737 gold Inorganic materials 0.000 description 16
- 239000010931 gold Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000012545 processing Methods 0.000 description 13
- 239000004642 Polyimide Substances 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000005041 Mylar™ Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QZVHYFUVMQIGGM-UHFFFAOYSA-N 2-Hexylthiophene Chemical compound CCCCCCC1=CC=CS1 QZVHYFUVMQIGGM-UHFFFAOYSA-N 0.000 description 1
- 239000001837 2-hydroxy-3-methylcyclopent-2-en-1-one Substances 0.000 description 1
- RJCHVBHJXJDUNL-UHFFFAOYSA-N 5,8-dicarbamoylnaphthalene-1,4-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=N)O)=CC=C(C(O)=N)C2=C1C(O)=O RJCHVBHJXJDUNL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001053 micromoulding Methods 0.000 description 1
- 238000000845 micromoulding in capillary Methods 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
15 TFTゲート
20 誘電体層
25 ソース領域
30 ドレイン
35 半導体材料層
40 第2基板
45 金属
50 貫通孔
100 基板
110 金製パターン化層
120 誘電体層
130 ソース電極
140 ドレイン電極
150,160 相互接続用パッド
170 半導体層
Claims (1)
- (A) 第1のフレキシブル基板上にゲート、ゲート誘電体、半導体層、ソース及びドレインを含む薄膜トランジスタを形成するステップと、
(B) 第2のフレキシブル基板上に相互接続構造を形成するステップと、
(C) 前記第1のフレキシブル基板を前記第2のフレキシブル基板に積層するステップとを有し、これにより、前記薄膜トランジスタを前記相互接続構造に電気的に相互接続することを特徴とする集積回路デバイスの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/456,210 US6197663B1 (en) | 1999-12-07 | 1999-12-07 | Process for fabricating integrated circuit devices having thin film transistors |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000372277A Division JP4358430B2 (ja) | 1999-12-07 | 2000-12-07 | 集積回路デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009212530A JP2009212530A (ja) | 2009-09-17 |
JP4505036B2 true JP4505036B2 (ja) | 2010-07-14 |
Family
ID=23811901
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000372277A Expired - Lifetime JP4358430B2 (ja) | 1999-12-07 | 2000-12-07 | 集積回路デバイスの製造方法 |
JP2009143777A Expired - Fee Related JP4505036B2 (ja) | 1999-12-07 | 2009-06-17 | 集積回路デバイスの製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000372277A Expired - Lifetime JP4358430B2 (ja) | 1999-12-07 | 2000-12-07 | 集積回路デバイスの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6197663B1 (ja) |
JP (2) | JP4358430B2 (ja) |
TW (1) | TW479369B (ja) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194167B1 (en) * | 1997-02-18 | 2001-02-27 | Washington State University Research Foundation | ω-3 fatty acid desaturase |
WO1999053371A1 (en) * | 1998-04-10 | 1999-10-21 | E-Ink Corporation | Electronic displays using organic-based field effect transistors |
US6873098B2 (en) | 1998-12-22 | 2005-03-29 | Alton O. Christensen, Sr. | Electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving |
US6842657B1 (en) * | 1999-04-09 | 2005-01-11 | E Ink Corporation | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication |
EP1208603A1 (en) * | 1999-08-31 | 2002-05-29 | E Ink Corporation | Transistor for an electronically driven display |
US6984571B1 (en) * | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6500604B1 (en) * | 2000-01-03 | 2002-12-31 | International Business Machines Corporation | Method for patterning sensitive organic thin films |
US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
DE60139463D1 (de) * | 2000-04-18 | 2009-09-17 | E Ink Corp | Prozess zur herstellung von dünnfilmtransistoren |
KR20010097351A (ko) * | 2000-04-21 | 2001-11-08 | 구자홍 | 액티브 구동 유기 전계발광소자 제조방법 |
WO2001097297A1 (en) * | 2000-06-16 | 2001-12-20 | The Penn State Research Foundation | Aqueous-based photolithography on organic materials |
US6891237B1 (en) * | 2000-06-27 | 2005-05-10 | Lucent Technologies Inc. | Organic semiconductor device having an active dielectric layer comprising silsesquioxanes |
DE10033112C2 (de) * | 2000-07-07 | 2002-11-14 | Siemens Ag | Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung |
DE10034873B4 (de) * | 2000-07-18 | 2005-10-13 | Pacifica Group Technologies Pty Ltd | Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug |
US6563133B1 (en) * | 2000-08-09 | 2003-05-13 | Ziptronix, Inc. | Method of epitaxial-like wafer bonding at low temperature and bonded structure |
WO2002015293A2 (de) * | 2000-08-18 | 2002-02-21 | Siemens Aktiengesellschaft | Organischer feldeffekt-transistor (ofet), herstellungsverfahren dazu und daraus gebaute integrierte schaltung sowie verwendungen |
EP1309994A2 (de) * | 2000-08-18 | 2003-05-14 | Siemens Aktiengesellschaft | Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung |
CA2420413C (en) * | 2000-08-25 | 2012-02-21 | Oswaldo Da Costa E Silva | Plant polynucleotides encoding novel vacuolar na+/h+ antiporters |
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
DE10044842A1 (de) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
DE10045192A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
US20040026121A1 (en) * | 2000-09-22 | 2004-02-12 | Adolf Bernds | Electrode and/or conductor track for organic components and production method thereof |
DE10061299A1 (de) | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
DE10061297C2 (de) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
DE10063721A1 (de) * | 2000-12-20 | 2002-07-11 | Merck Patent Gmbh | Organischer Halbleiter, Herstellungsverfahren dazu und Verwendungen |
US6992322B2 (en) * | 2001-01-02 | 2006-01-31 | Kavassery Sureswaran Narayan | Photo-responsive organic field effect transistor |
DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
JP2005509200A (ja) * | 2001-03-26 | 2005-04-07 | シーメンス アクチエンゲゼルシヤフト | 少なくとも2つの有機電子構成エレメントを有する装置、および該装置のための製造方法 |
GB0108309D0 (en) * | 2001-04-03 | 2001-05-23 | Koninkl Philips Electronics Nv | Matrix array devices with flexible substrates |
DE10126859A1 (de) * | 2001-06-01 | 2002-12-12 | Siemens Ag | Verfahren zur Erzeugung von leitfähigen Strukturen mittels Drucktechnik sowie daraus hergestellte aktive Bauelemente für integrierte Schaltungen |
DE10126860C2 (de) * | 2001-06-01 | 2003-05-28 | Siemens Ag | Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen |
TW548860B (en) | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
ATE463845T1 (de) * | 2001-10-11 | 2010-04-15 | Koninkl Philips Electronics Nv | Dünnfilmtranistor-bauelement und diesbezügliches verfahren |
DE10151036A1 (de) * | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
DE10151440C1 (de) * | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
EP1444055A4 (en) * | 2001-10-19 | 2007-04-18 | Superior Micropowders Llc | BAND-CONSTRUCTED COMPOSITIONS FOR DEPOSITING ELECTRONIC STRUCTURES |
DE10160732A1 (de) * | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
US20030122120A1 (en) * | 2001-12-28 | 2003-07-03 | Motorola, Inc. | Organic semiconductor device and method |
US6677607B2 (en) * | 2002-01-25 | 2004-01-13 | Motorola, Inc. | Organic semiconductor device having an oxide layer |
US6864118B2 (en) * | 2002-01-28 | 2005-03-08 | Hewlett-Packard Development Company, L.P. | Electronic devices containing organic semiconductor materials |
US6596569B1 (en) * | 2002-03-15 | 2003-07-22 | Lucent Technologies Inc. | Thin film transistors |
US7229847B2 (en) * | 2002-03-15 | 2007-06-12 | Lucent Technologies Inc. | Forming electrical contacts to a molecular layer |
DE10212640B4 (de) * | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
DE10212639A1 (de) * | 2002-03-21 | 2003-10-16 | Siemens Ag | Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen |
DE10226370B4 (de) * | 2002-06-13 | 2008-12-11 | Polyic Gmbh & Co. Kg | Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET) |
US20030235930A1 (en) * | 2002-06-25 | 2003-12-25 | Lucent Technologies Inc. | Multi-impression nanofeature production |
US6661024B1 (en) * | 2002-07-02 | 2003-12-09 | Motorola, Inc. | Integrated circuit including field effect transistor and method of manufacture |
WO2004017439A2 (de) | 2002-07-29 | 2004-02-26 | Siemens Aktiengesellschaft | Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu |
US7414513B2 (en) | 2002-08-23 | 2008-08-19 | Polyic Gmbh & Co. Kg | Organic component for overvoltage protection and associated circuit |
CN1726604A (zh) * | 2002-11-05 | 2006-01-25 | 波尔伊克两合公司 | 具有高分辨率结构的有机电子元件及其制造方法 |
DE10253154A1 (de) * | 2002-11-14 | 2004-05-27 | Siemens Ag | Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe |
DE50313445D1 (de) * | 2003-01-09 | 2011-03-10 | Polyic Gmbh & Co Kg | Ikgerät, sowie verwendung dazu |
ITTO20030145A1 (it) * | 2003-02-28 | 2004-09-01 | Infm Istituto Naz Per La Fisi Ca Della Mater | Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento. |
JP3794411B2 (ja) * | 2003-03-14 | 2006-07-05 | セイコーエプソン株式会社 | 表示装置および電子機器 |
JP2004304009A (ja) * | 2003-03-31 | 2004-10-28 | Canon Inc | 有機薄膜トランジスタ |
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US7105462B2 (en) * | 2003-07-22 | 2006-09-12 | E. I. Du Pont De Nemours And Company | Lamination of organic semiconductor |
GB0318817D0 (en) * | 2003-08-11 | 2003-09-10 | Univ Cambridge Tech | Method of making a polymer device |
DE10338277A1 (de) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organischer Kondensator mit spannungsgesteuerter Kapazität |
DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
DE10340643B4 (de) * | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht |
DE10340644B4 (de) * | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
DE102004002024A1 (de) * | 2004-01-14 | 2005-08-11 | Siemens Ag | Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung |
JP4407311B2 (ja) * | 2004-02-20 | 2010-02-03 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
DE102004040831A1 (de) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Funketikettfähige Umverpackung |
KR101058458B1 (ko) * | 2004-09-22 | 2011-08-24 | 엘지디스플레이 주식회사 | 저분자 유기 반도체물질을 이용한 액정표시장치용 어레이기판 및 그의 제조 방법 |
WO2006052625A1 (en) * | 2004-11-03 | 2006-05-18 | Massachusetts Institute Of Technology | Control of threshold voltage in organic field effect transistors |
US7321133B2 (en) * | 2004-11-17 | 2008-01-22 | Plextronics, Inc. | Heteroatomic regioregular poly(3-substitutedthiophenes) as thin film conductors in diodes which are not light emitting or photovoltaic |
DE102004059464A1 (de) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Elektronikbauteil mit Modulator |
DE102004059465A1 (de) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | Erkennungssystem |
DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
DE102004063435A1 (de) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organischer Gleichrichter |
KR101133759B1 (ko) * | 2004-12-28 | 2012-04-09 | 삼성전자주식회사 | 전기 영동 표시 장치 및 그 제조 방법 |
US20100301349A1 (en) * | 2005-01-26 | 2010-12-02 | Harvatek Corporation | Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same |
US20060258031A1 (en) * | 2005-01-26 | 2006-11-16 | Bily Wang | Wafer-level electro-optical semiconductor manufacture fabrication method |
DE102005009820A1 (de) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
DE102005009819A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
DE102005017655B4 (de) * | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005035590A1 (de) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Elektronisches Bauelement |
DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
DE102005042166A1 (de) * | 2005-09-06 | 2007-03-15 | Polyic Gmbh & Co.Kg | Organisches Bauelement und ein solches umfassende elektrische Schaltung |
DE102005044306A1 (de) * | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
KR100766318B1 (ko) | 2005-11-29 | 2007-10-11 | 엘지.필립스 엘시디 주식회사 | 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법 |
US20070215863A1 (en) * | 2006-03-15 | 2007-09-20 | Lucent Technologies Inc. | Fabricating apparatus with doped organic semiconductors |
DE102006047388A1 (de) * | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische Schaltung |
JP2008159934A (ja) * | 2006-12-25 | 2008-07-10 | Kyodo Printing Co Ltd | フレキシブルtft基板及びその製造方法とフレキシブルディスプレイ |
US7851281B2 (en) | 2007-11-28 | 2010-12-14 | Panasonic Corporation | Manufacturing method of flexible semiconductor device and flexible semiconductor device |
US7755156B2 (en) | 2007-12-18 | 2010-07-13 | Palo Alto Research Center Incorporated | Producing layered structures with lamination |
US7586080B2 (en) * | 2007-12-19 | 2009-09-08 | Palo Alto Research Center Incorporated | Producing layered structures with layers that transport charge carriers in which each of a set of channel regions or portions operates as an acceptable switch |
US8283655B2 (en) | 2007-12-20 | 2012-10-09 | Palo Alto Research Center Incorporated | Producing layered structures with semiconductive regions or subregions |
US7821000B2 (en) | 2008-02-01 | 2010-10-26 | Alcatel-Lucent Usa Inc. | Method of doping organic semiconductors |
JP5359003B2 (ja) * | 2008-04-04 | 2013-12-04 | コニカミノルタ株式会社 | 有機薄膜トランジスタ装置、およびその製造方法 |
KR20110050580A (ko) * | 2008-08-04 | 2011-05-16 | 파나소닉 주식회사 | 플렉시블 반도체 장치 및 그 제조 방법 |
KR101681884B1 (ko) | 2009-03-27 | 2016-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치, 표시장치 및 전자기기 |
DE102010001405B4 (de) * | 2010-01-29 | 2018-03-15 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung eines Halbleiterelements mit einer Substratsdiode mit geringen Fluktuationen |
US8445320B2 (en) * | 2010-05-20 | 2013-05-21 | International Business Machines Corporation | Graphene channel-based devices and methods for fabrication thereof |
JP2013251255A (ja) | 2012-05-04 | 2013-12-12 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
TWI696108B (zh) | 2015-02-13 | 2020-06-11 | 日商半導體能源研究所股份有限公司 | 功能面板、功能模組、發光模組、顯示模組、位置資料輸入模組、發光裝置、照明設備、顯示裝置、資料處理裝置、功能面板的製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3909332A (en) * | 1973-06-04 | 1975-09-30 | Gen Electric | Bonding process for dielectric isolation of single crystal semiconductor structures |
JPS6418248A (en) * | 1987-07-13 | 1989-01-23 | Nec Corp | Manufacture of semiconductor device |
US5354695A (en) | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
JPH05267621A (ja) | 1991-12-27 | 1993-10-15 | Nippon Steel Corp | 半導体装置のコンタクト構造及びその製造方法 |
GB9203595D0 (en) * | 1992-02-20 | 1992-04-08 | Philips Electronics Uk Ltd | Methods of fabricating thin film structures and display devices produced thereby |
JP2948018B2 (ja) * | 1992-03-17 | 1999-09-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5727310A (en) | 1993-01-08 | 1998-03-17 | Sheldahl, Inc. | Method of manufacturing a multilayer electronic circuit |
US5416044A (en) * | 1993-03-12 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for producing a surface-emitting laser |
DE4311762C2 (de) * | 1993-04-08 | 1995-02-02 | Josef Dr Kemmer | Verfahren zur Verbindung elektrischer Kontaktstellen |
US5523587A (en) * | 1993-06-24 | 1996-06-04 | At&T Corp. | Method for low temperature growth of epitaxial silicon and devices produced thereby |
US5689136A (en) | 1993-08-04 | 1997-11-18 | Hitachi, Ltd. | Semiconductor device and fabrication method |
US5414299A (en) | 1993-09-24 | 1995-05-09 | Vlsi Technology, Inc. | Semi-conductor device interconnect package assembly for improved package performance |
JP3185540B2 (ja) | 1994-06-10 | 2001-07-11 | 松下電器産業株式会社 | 半導体集積回路 |
TW293172B (ja) | 1994-12-09 | 1996-12-11 | At & T Corp | |
JP2900229B2 (ja) * | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
US5659181A (en) | 1995-03-02 | 1997-08-19 | Lucent Technologies Inc. | Article comprising α-hexathienyl |
JPH08328031A (ja) * | 1995-06-02 | 1996-12-13 | Sharp Corp | フルカラー液晶表示装置およびその製造方法 |
US5625199A (en) | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
US5796121A (en) * | 1997-03-25 | 1998-08-18 | International Business Machines Corporation | Thin film transistors fabricated on plastic substrates |
US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
US5998804A (en) * | 1997-07-03 | 1999-12-07 | Hna Holdings, Inc. | Transistors incorporating substrates comprising liquid crystal polymers |
JPH11284066A (ja) * | 1998-03-26 | 1999-10-15 | Ricoh Co Ltd | 半導体装置およびその製造方法 |
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