JP4494394B2 - 発光装置、表示装置及び電子機器 - Google Patents
発光装置、表示装置及び電子機器 Download PDFInfo
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- JP4494394B2 JP4494394B2 JP2006327847A JP2006327847A JP4494394B2 JP 4494394 B2 JP4494394 B2 JP 4494394B2 JP 2006327847 A JP2006327847 A JP 2006327847A JP 2006327847 A JP2006327847 A JP 2006327847A JP 4494394 B2 JP4494394 B2 JP 4494394B2
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- light emitting
- substrate
- organic light
- electrode
- emitting device
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Description
C.W.タン等,アプライド フィジックス レターズ,Vol.51,No.12,913−915(1987)
まず、本発明の発光装置の形態を、図7を用いて説明する。図7では、第1電極701、有機発光層702、透明性を有する第2電極703からなる有機発光素子712の設けられた基板(第1基板)711と、透明性を有する対向基板(第2基板)713とを貼りあわせる構造とし、基板711と対向基板713とを貼りあわせる際、画素部716の領域は透明性を有する第2のシール剤715で全面覆い、基板間隔を保持するギャップ材(フィラー、微粒子など)を含む第1のシール剤714(第2のシール剤よりも粘度が高い)でその周囲を囲む形としている。すなわち、第1のシール剤714と第2のシール剤715とで封止する構造である。また、第2のシール剤715の内容物は、紫外線硬化型樹脂715aに紫外線吸収剤715bを分散させたものを用いている。なお、本発明においては、第1のシール剤714はあってもなくても良いが、均一な封止形状を得るためには、第1のシール剤714を用いた方が好ましい。
本発明の第2のシール剤(図7における715)について説明する。
サリシレート系の紫外吸収剤にはフェニルサリシレート、4−t−ブチルフェニルサリシレート等が含まれる。
ここでは、封止の工程について、図1を用いて説明する。
図2(A)は、本発明を実施したアクティブマトリクス型の発光装置の上面図である。なお、本発明は、アクティブマトリクス型の発光装置に限定されることはなく、単純マトリクス型やセグメント型の発光装置、あるいは照明灯の発光デバイスにも適用可能である。
本発明の画素部における断面構造の一部を図4に示す。
Claims (9)
- 第1基板上に設けられた第1電極と、
前記第1電極に接して設けられた電界発光する有機化合物を含む有機発光層と、
前記有機発光層に接して設けられた透光性を有する第2電極と、
を順次積層してなる有機発光素子が、前記第1基板と透光性を有する第2基板との間に設けられ、
前記第2電極上に接して透明保護層が設けられ、
前記透明保護層と前記第2基板との間には、シール剤が設けられ、
前記シール剤は前記透明保護層及び前記第2基板に接して設けられ、
前記シール剤は、紫外線吸収剤を紫外線硬化型樹脂に分散したものであり、
前記紫外線吸収剤は水分吸着性を有し、
前記紫外線吸収剤は、紫外光の波長領域に吸収を有する物質を多孔体に担持させたものであることを特徴とする発光装置。 - 第1基板上に設けられた第1電極と、
前記第1電極に接して設けられた電界発光する有機化合物を含む有機発光層と、
前記有機発光層に接して設けられた透光性を有する第2電極と、
を順次積層してなる有機発光素子が、前記第1基板と透光性を有する第2基板との間に設けられ、
前記第2電極上に接して透明保護層が設けられ、
前記透明保護層と前記第2基板との間には、シール剤が設けられ、
前記シール剤は前記透明保護層及び前記第2基板に接して設けられ、
前記シール剤は、紫外線吸収剤を紫外線硬化型樹脂に分散したものであって、前記紫外線硬化型樹脂を硬化させるために照射する紫外光の波長に対して吸光度が1以上であり、
前記紫外線吸収剤は水分吸着性を有し、
前記紫外線吸収剤は、前記紫外光の波長領域に吸収を有する物質を多孔体に担持させたものであることを特徴とする発光装置。 - 請求項2において、前記紫外光の波長は、200nm以上400nm以下であることを特徴とする発光装置。
- 請求項1乃至請求項3のいずれか一において、前記多孔体はゼオライトであることを特徴とする発光装置。
- 請求項1乃至請求項4のいずれか一において、前記透明保護層は酸素及び水分をブロッキングすることを特徴とする発光装置。
- 請求項1乃至請求項5のいずれか一において、前記透明保護層はCaF2、MgF2又はBaF2からなることを特徴とする発光装置。
- 請求項1乃至請求項6のいずれか一において、前記紫外線吸収剤は酸素吸収性を有することを特徴とする発光装置。
- 請求項1乃至請求項7のいずれか一における前記発光装置を用いたことを特徴とする表示装置。
- 請求項1乃至請求項7のいずれか一における前記発光装置を用いたことを特徴とする電子機器。
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Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG194237A1 (en) | 2001-12-05 | 2013-11-29 | Semiconductor Energy Lab | Organic semiconductor element |
EP1367659B1 (en) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
JP4240276B2 (ja) | 2002-07-05 | 2009-03-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP2004311421A (ja) * | 2003-03-27 | 2004-11-04 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子 |
US7504049B2 (en) * | 2003-08-25 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device |
US7511421B2 (en) * | 2003-08-25 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Mixed metal and organic electrode for organic device |
JP4479381B2 (ja) * | 2003-09-24 | 2010-06-09 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
US7791270B2 (en) | 2004-09-17 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd | Light-emitting device with reduced deterioration of periphery |
KR100611768B1 (ko) * | 2004-10-11 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
US7179583B2 (en) * | 2004-10-29 | 2007-02-20 | Albert Roshelli | Edge cure prevention composition and process for using the same |
US7314770B2 (en) * | 2004-11-18 | 2008-01-01 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
US7192795B2 (en) * | 2004-11-18 | 2007-03-20 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
JP4795360B2 (ja) | 2004-12-06 | 2011-10-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 有機エレクトロルミネセント光源 |
KR20070089845A (ko) * | 2004-12-06 | 2007-09-03 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 유기 전계발광 광원 |
US20060244371A1 (en) * | 2005-05-02 | 2006-11-02 | Eastman Kodak Company | OLED device having improved lifetime and output |
US7705346B2 (en) * | 2005-06-06 | 2010-04-27 | Xerox Corporation | Barrier layer for an organic electronic device |
JP2007026970A (ja) * | 2005-07-20 | 2007-02-01 | Hitachi Displays Ltd | 有機発光表示装置 |
JP5422121B2 (ja) | 2005-08-04 | 2014-02-19 | 日亜化学工業株式会社 | 発光装置及びその製造方法並びに成形体及び封止部材 |
US20070092737A1 (en) * | 2005-10-21 | 2007-04-26 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
WO2007047289A1 (en) * | 2005-10-17 | 2007-04-26 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
US20070092736A1 (en) * | 2005-10-21 | 2007-04-26 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
US7595515B2 (en) * | 2005-10-24 | 2009-09-29 | 3M Innovative Properties Company | Method of making light emitting device having a molded encapsulant |
CN101297411B (zh) * | 2005-10-24 | 2010-05-19 | 3M创新有限公司 | 发光器件的制造方法及发光器件 |
JP4600254B2 (ja) * | 2005-11-22 | 2010-12-15 | セイコーエプソン株式会社 | 発光装置および電子機器 |
KR100682963B1 (ko) * | 2006-02-03 | 2007-02-15 | 삼성전자주식회사 | 자외선 차단막을 구비한 유기발광 디스플레이 |
JP4697008B2 (ja) * | 2006-03-31 | 2011-06-08 | 東洋インキ製造株式会社 | 有機エレクトロルミネッセンスセル用紫外線遮蔽性感圧式接着剤組成物および該組成物を用いた有機エレクトロルミネッセンスセル用部材 |
US7655486B2 (en) * | 2006-05-17 | 2010-02-02 | 3M Innovative Properties Company | Method of making light emitting device with multilayer silicon-containing encapsulant |
US20070269586A1 (en) * | 2006-05-17 | 2007-11-22 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing composition |
US8092735B2 (en) | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
KR101130199B1 (ko) * | 2006-11-06 | 2012-04-23 | 에이전시 포 사이언스, 테크놀로지 앤드 리서치 | 나노입자 캡슐 배리어 스택 |
WO2008078648A1 (ja) * | 2006-12-26 | 2008-07-03 | Sharp Kabushiki Kaisha | 有機エレクトロルミネセンスパネル、有機エレクトロルミネセンスディスプレイ、有機エレクトロルミネセンス照明、及び、それらの製造方法 |
KR101329143B1 (ko) * | 2007-01-10 | 2013-11-20 | 삼성전자주식회사 | 금속 나노입자를 이용한 자외선 차단 재료 |
JP5470680B2 (ja) * | 2007-02-06 | 2014-04-16 | 日亜化学工業株式会社 | 発光装置及びその製造方法並びに成形体 |
JP4977548B2 (ja) * | 2007-07-31 | 2012-07-18 | 住友化学株式会社 | 有機エレクトロルミネッセンス装置およびその製造方法 |
JP2009037809A (ja) * | 2007-07-31 | 2009-02-19 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス装置およびその製造方法 |
KR101323394B1 (ko) * | 2007-09-12 | 2013-10-29 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
AU2009234506B2 (en) * | 2008-04-09 | 2013-11-21 | Agency For Science, Technology And Research | Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices |
KR101148886B1 (ko) * | 2009-05-13 | 2012-05-29 | 네오뷰코오롱 주식회사 | 유기전계발광소자 및 그 제조방법 |
US7989824B2 (en) * | 2009-06-03 | 2011-08-02 | Koninklijke Philips Electronics N.V. | Method of forming a dielectric layer on a semiconductor light emitting device |
KR101174873B1 (ko) | 2009-08-14 | 2012-08-17 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이를 제조하는 방법 |
KR101015887B1 (ko) * | 2009-08-14 | 2011-02-23 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
JP2011076795A (ja) * | 2009-09-29 | 2011-04-14 | Sumitomo Chemical Co Ltd | 有機el装置 |
KR101155904B1 (ko) * | 2010-01-04 | 2012-06-20 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR101127609B1 (ko) * | 2010-03-23 | 2012-03-22 | 삼성에스디아이 주식회사 | 실링재, 이를 구비한 염료 감응형 태양전지, 및 염료 감응형 태양전지 제조 방법 |
JP5479391B2 (ja) * | 2011-03-08 | 2014-04-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
DE102011079101A1 (de) * | 2011-07-13 | 2013-01-17 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches bauteil und verfahren zu dessen herstellung |
US9412971B2 (en) | 2011-07-14 | 2016-08-09 | Osram Oled Gmbh | Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component |
KR101421168B1 (ko) | 2011-09-20 | 2014-07-21 | 엘지디스플레이 주식회사 | 유기전계발광 표시소자 및 그 제조방법 |
WO2013046545A1 (ja) * | 2011-09-26 | 2013-04-04 | パナソニック株式会社 | 発光装置の製造方法および発光装置 |
TWI558787B (zh) * | 2012-08-03 | 2016-11-21 | Lg化學股份有限公司 | 黏合膜及使用彼之有機電子裝置的包封產品 |
TWI578592B (zh) * | 2013-03-12 | 2017-04-11 | 應用材料股份有限公司 | 有機發光二極體元件及包括其之封裝結構的沉積方法 |
JP6564559B2 (ja) | 2013-05-10 | 2019-08-21 | 株式会社半導体エネルギー研究所 | 表示パネル及び電子機器 |
CN103277688A (zh) * | 2013-06-08 | 2013-09-04 | 苏州金科信汇光电科技有限公司 | 超薄直下式面板灯 |
TWI777433B (zh) | 2013-09-06 | 2022-09-11 | 日商半導體能源研究所股份有限公司 | 發光裝置以及發光裝置的製造方法 |
USRE48695E1 (en) | 2013-12-31 | 2021-08-17 | Beijing Visionox Technology Co., Ltd. | Transparent OLED device and display device employing same |
CN103715230B (zh) * | 2013-12-31 | 2018-12-07 | 北京维信诺科技有限公司 | 一种透明oled器件及其显示装置 |
KR20150097359A (ko) * | 2014-02-18 | 2015-08-26 | 주식회사 엘지화학 | 봉지 필름 및 이를 포함하는 유기전자장치 |
KR102197935B1 (ko) * | 2014-02-21 | 2021-01-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
CN103872224A (zh) * | 2014-03-04 | 2014-06-18 | 福建永德吉灯业股份有限公司 | 新型led发光元件 |
JP2016004910A (ja) * | 2014-06-17 | 2016-01-12 | キヤノン株式会社 | 有機発光装置 |
KR102223676B1 (ko) * | 2014-06-24 | 2021-03-08 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102295614B1 (ko) * | 2014-09-29 | 2021-08-27 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2016059497A1 (en) | 2014-10-17 | 2016-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
KR102271696B1 (ko) * | 2014-10-29 | 2021-07-01 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치용 봉지 필름, 이의 제조 방법 및 이를 이용한 유기 발광 표시 장치 |
US10304813B2 (en) * | 2015-11-05 | 2019-05-28 | Innolux Corporation | Display device having a plurality of bank structures |
US9923135B2 (en) | 2015-11-23 | 2018-03-20 | Industrial Technology Research Institute | Light-emitting assembly |
KR102449867B1 (ko) * | 2015-11-30 | 2022-09-29 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102322016B1 (ko) | 2016-06-01 | 2021-11-09 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
US10355243B2 (en) | 2016-06-01 | 2019-07-16 | Samsung Display Co., Ltd. | Display apparatus and method of manufacturing the same |
CN106384788A (zh) * | 2016-10-21 | 2017-02-08 | 纳晶科技股份有限公司 | 一种电致发光器件及用于电致发光器件的液态干燥剂 |
CN106876604A (zh) | 2017-02-14 | 2017-06-20 | 鄂尔多斯市源盛光电有限责任公司 | 有机发光二极管器件及其制造方法 |
US20190131568A1 (en) * | 2017-11-01 | 2019-05-02 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Encapsulation structure of oled and encapsulation method for oled |
US11283048B2 (en) * | 2017-12-18 | 2022-03-22 | Lg Chem, Ltd. | Organic electronic device |
JPWO2020003056A1 (ja) | 2018-06-29 | 2021-08-02 | 株式会社半導体エネルギー研究所 | 表示パネル、表示装置、入出力装置、情報処理装置 |
CN111370439A (zh) * | 2018-12-07 | 2020-07-03 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
CN109637387A (zh) * | 2019-01-31 | 2019-04-16 | 武汉华星光电半导体显示技术有限公司 | 显示模组及其制作方法、电子装置 |
KR20200114055A (ko) | 2019-03-27 | 2020-10-07 | 주식회사 엘지화학 | 투명 발광소자 디스플레이 |
CN110752317A (zh) * | 2019-11-08 | 2020-02-04 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
KR20220007769A (ko) * | 2020-07-09 | 2022-01-19 | 삼성디스플레이 주식회사 | 표시 장치 |
JP7523983B2 (ja) * | 2020-07-22 | 2024-07-29 | キオクシア株式会社 | 半導体装置及び半導体装置の製造方法 |
CN112952025A (zh) * | 2021-03-31 | 2021-06-11 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012383A (ja) * | 1996-06-26 | 1998-01-16 | Idemitsu Kosan Co Ltd | 多色発光装置およびその製造方法 |
JP2001338755A (ja) * | 2000-03-21 | 2001-12-07 | Seiko Epson Corp | 有機el素子およびその製造方法 |
JP2002324664A (ja) * | 2001-04-27 | 2002-11-08 | Ricoh Co Ltd | 有機el素子 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4550073A (en) * | 1982-04-22 | 1985-10-29 | E. I. Du Pont De Nemours And Company | Overcoated photohardenable element having surface protuberances |
JP2776040B2 (ja) * | 1990-04-27 | 1998-07-16 | 凸版印刷株式会社 | 有機薄膜el素子 |
JP2793048B2 (ja) * | 1991-02-22 | 1998-09-03 | 三井化学株式会社 | 有機発光素子の封止方法 |
EP0522200B1 (en) | 1991-07-10 | 1998-05-13 | Samsung Electronics Co., Ltd. | Mobile monitoring device |
JPH06176867A (ja) | 1992-12-10 | 1994-06-24 | Denki Kagaku Kogyo Kk | 電界発光素子 |
JP2772339B2 (ja) | 1994-11-30 | 1998-07-02 | セイコープレシジョン株式会社 | カラーel表示装置 |
JPH09148066A (ja) | 1995-11-24 | 1997-06-06 | Pioneer Electron Corp | 有機el素子 |
GB9609282D0 (en) * | 1996-05-03 | 1996-07-10 | Cambridge Display Tech Ltd | Protective thin oxide layer |
JPH10125469A (ja) * | 1996-10-24 | 1998-05-15 | Tdk Corp | 有機el発光素子 |
US5990615A (en) * | 1997-02-03 | 1999-11-23 | Nec Corporation | Organic electroluminescent display with protective layer on cathode and an inert medium |
TW513450B (en) | 1997-03-26 | 2002-12-11 | Daicel Chem | Polyesters containing benzotriazolyl group, process for preparing thereof, UV absorption agent containing them and synthetic resin composition |
JP3714574B2 (ja) * | 1997-03-26 | 2005-11-09 | ダイセル化学工業株式会社 | 紫外線吸収剤とその製造方法および合成樹脂組成物 |
JPH10275679A (ja) | 1997-03-31 | 1998-10-13 | Toyota Central Res & Dev Lab Inc | 有機el素子 |
JP3743876B2 (ja) * | 1997-07-16 | 2006-02-08 | カシオ計算機株式会社 | 電界発光素子及びその製造方法 |
JP3799829B2 (ja) * | 1997-09-11 | 2006-07-19 | セイコーエプソン株式会社 | 電気光学装置およびその製造方法並びに投射型表示装置 |
JP2000150145A (ja) | 1998-11-02 | 2000-05-30 | Toyota Motor Corp | El素子の密封方法 |
JP2000223271A (ja) * | 1999-01-29 | 2000-08-11 | Fuji Electric Co Ltd | 有機el素子 |
JP2001126868A (ja) * | 1999-10-28 | 2001-05-11 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
US6384427B1 (en) * | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
TW587239B (en) * | 1999-11-30 | 2004-05-11 | Semiconductor Energy Lab | Electric device |
JP2001150145A (ja) * | 1999-12-01 | 2001-06-05 | Mitsubishi Electric Corp | ストリップ接続装置及び方法 |
TW493152B (en) * | 1999-12-24 | 2002-07-01 | Semiconductor Energy Lab | Electronic device |
US6844910B2 (en) * | 1999-12-28 | 2005-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
TWI249363B (en) * | 2000-02-25 | 2006-02-11 | Seiko Epson Corp | Organic electroluminescence device and manufacturing method therefor |
US7129918B2 (en) * | 2000-03-10 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving electronic device |
US7517551B2 (en) * | 2000-05-12 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light-emitting device |
TW571601B (en) * | 2000-05-17 | 2004-01-11 | Dynic Corp | Hygroscopic molded material |
JP2001357973A (ja) | 2000-06-15 | 2001-12-26 | Sony Corp | 表示装置 |
US6864628B2 (en) * | 2000-08-28 | 2005-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound |
US6739931B2 (en) * | 2000-09-18 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
JP2002175877A (ja) * | 2000-09-27 | 2002-06-21 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、電子機器 |
JP2002122731A (ja) * | 2000-10-17 | 2002-04-26 | Fuji Photo Film Co Ltd | 光学フィルター |
AU783565B2 (en) * | 2000-10-20 | 2005-11-10 | Sumitomo Chemical Company, Limited | Photocatalyst, process for producing the same and photocatalyst coating composition comprising the same |
JP2003109751A (ja) * | 2001-09-28 | 2003-04-11 | Sanyo Electric Co Ltd | 有機el素子及びその製造方法 |
TW519853B (en) * | 2001-10-17 | 2003-02-01 | Chi Mei Electronic Corp | Organic electro-luminescent display and its packaging method |
CN100474654C (zh) * | 2002-02-12 | 2009-04-01 | 出光兴产株式会社 | 有机el显示装置及其制造方法 |
JP4069640B2 (ja) * | 2002-02-12 | 2008-04-02 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
JP4240276B2 (ja) * | 2002-07-05 | 2009-03-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
US6734625B2 (en) * | 2002-07-30 | 2004-05-11 | Xerox Corporation | Organic light emitting device (OLED) with multiple capping layers passivation region on an electrode |
KR101032337B1 (ko) * | 2002-12-13 | 2011-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 그의 제조방법 |
JP4401657B2 (ja) * | 2003-01-10 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 発光装置の製造方法 |
-
2003
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- 2003-12-15 AU AU2003289347A patent/AU2003289347A1/en not_active Abandoned
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-
2014
- 2014-07-17 US US14/334,087 patent/US20150076461A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012383A (ja) * | 1996-06-26 | 1998-01-16 | Idemitsu Kosan Co Ltd | 多色発光装置およびその製造方法 |
JP2001338755A (ja) * | 2000-03-21 | 2001-12-07 | Seiko Epson Corp | 有機el素子およびその製造方法 |
JP2002324664A (ja) * | 2001-04-27 | 2002-11-08 | Ricoh Co Ltd | 有機el素子 |
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US20150076461A1 (en) | 2015-03-19 |
KR101236235B1 (ko) | 2013-02-22 |
TW200420182A (en) | 2004-10-01 |
WO2004060021A1 (ja) | 2004-07-15 |
US7531847B2 (en) | 2009-05-12 |
KR101114900B1 (ko) | 2012-03-06 |
KR20110046564A (ko) | 2011-05-04 |
US8785964B2 (en) | 2014-07-22 |
JP2007115705A (ja) | 2007-05-10 |
TWI351894B (en) | 2011-11-01 |
CN1732714A (zh) | 2006-02-08 |
JPWO2004060021A1 (ja) | 2006-05-11 |
US20040245541A1 (en) | 2004-12-09 |
CN1732714B (zh) | 2011-07-13 |
CN102281659B (zh) | 2014-06-04 |
KR20050088220A (ko) | 2005-09-02 |
AU2003289347A1 (en) | 2004-07-22 |
US20090218939A1 (en) | 2009-09-03 |
CN102281659A (zh) | 2011-12-14 |
JP4429917B2 (ja) | 2010-03-10 |
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