JP4441658B1 - 銅配線形成方法、銅配線および半導体装置 - Google Patents
銅配線形成方法、銅配線および半導体装置 Download PDFInfo
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Abstract
【解決手段】この発明は、絶縁層10に銅からなる配線本体を備えてなる銅配線を形成する銅配線形成方法において、絶縁層10に開口部11を設ける工程と、開口部の内周面に、銅より酸化されやすい金属元素を含む銅合金被膜12を形成する銅合金被膜形成工程と、銅合金被膜に加熱処理を施して当該銅合金被膜からバリア層を形成するとともにその表面を構成する結晶面の種類を減じる加熱処理工程と、バリア層上に銅を被着させ、銅からなる配線本体を形成する配線本体形成工程と、を有することを特徴としている。
【選択図】図5
Description
図6は、図5に示した素材の加熱処理に因り、一体化した拡散バリア層が形成された状態での垂直断面構造を示す模式図である。図7及び図8は、拡散バリア層の素材の加熱処理前後に於けるX線回折パターンである。図9は、拡散バリア層上に配線本体をなす銅を設けた状態に於ける垂直断面構造を示す模式図である。図10は、完成した銅配線構造の垂直断面構造を示す模式図である。
10,20 層間絶縁膜
11,21 配線溝
12,22 重層膜
12a マンガン膜
12b 銅膜
13,23 拡散バリア層
14,24 銅配線本体
22a 窒化タンタル膜
22b タンタル膜
22c 銅・マンガン合金膜
23a 加熱処理後の窒化タンタル膜
23b 加熱処理後のタンタル膜
23c 加熱処理後の銅・マンガン合金膜
Claims (27)
- 絶縁層に銅からなる配線本体を備えてなる銅配線を形成する銅配線形成方法において、
上記絶縁層に溝状の開口部を設ける工程と、
上記開口部の内周面に、銅より酸化されやすい金属元素として、マグネシウム(Mg)、マンガン(Mn)、アルミニウム(Al)およびゲルマニウム(Ge)のうちの少なくとも1つ以上を含む銅合金被膜を形成する銅合金被膜形成工程と、
上記銅合金被膜に加熱処理を施して当該銅合金被膜からバリア層を形成するとともにその表面を構成する結晶面として、銅の{100}、{111}および{311}の各面から{311}面が除去される加熱処理工程と、
上記バリア層上に銅を被着させ、銅からなる配線本体を形成する配線本体形成工程と、
を有することを特徴とする銅配線形成方法。 - 上記バリア層は、絶縁層側に銅より酸化されやすい金属元素として、マグネシウム(Mg)、マンガン(Mn)、アルミニウム(Al)およびゲルマニウム(Ge)のうちの少なくとも1つ以上が集中的に蓄積し、当該バリア層表面側に向けて銅の原子濃度が増加している、請求項1に記載の銅配線形成方法。
- 上記加熱処理工程を経た銅合金被膜から形成されたバリア層は、銅の{100}面の表面占有面積が減少している、請求項1または2に記載の銅配線形成方法。
- 上記加熱処理工程を経た銅合金被膜から形成されたバリア層は、表面が銅の{200}X線回折ピークの強度よりも大きな強度の銅の{111}X線回折ピークを示す、請求項1から3の何れか1項に記載の銅配線形成方法。
- 上記加熱処理工程を経た銅合金被膜から形成されたバリア層は、表面が銅の{200}X線回折ピークの強度よりも8倍以上大きな強度の銅の{111}X線回折ピークを示す、請求項4に記載の銅配線形成方法。
- 上記銅合金被膜は、銅合金被膜形成工程において圧力を1パスカル(Pa)以下とする真空中で形成されている、請求項4に記載の銅配線形成方法。
- 上記銅合金被膜は、銅合金被膜形成工程において圧力を0.1パスカル(Pa)以下とする真空中で形成されている、請求項4または5に記載の銅配線形成方法。
- 上記銅合金被膜の銅より酸化されやすい金属元素がマンガン(Mn)である、請求項1から7の何れか1項に記載の銅配線形成方法。
- 上記銅合金被膜は重層構造である、請求項1から8の何れか1項に記載の銅配線形成方法。
- 上記重層構造のうちの1層は、ゲルマニウムを含む層である、請求項9に記載の銅配線形成方法。
- 上記重層構造は、ゲルマニウムを含む層と、銅および銅より酸化されやすい金属元素として、マグネシウム(Mg)、マンガン(Mn)、アルミニウム(Al)およびゲルマニウム(Ge)のうちの少なくとも1つ以上を含む銅合金からなる層とを有している、請求項9に記載の銅配線形成方法。
- 上記銅合金からなる層は、重層構造の最上層をなしている、請求項11に記載の銅配線形成方法。
- 上記絶縁層は珪素を含み、その絶縁層上に、珪素よりも酸化されやすい金属元素を含む層を形成し、その後銅および銅より酸化されやすい金属元素として、マグネシウム(Mg)、マンガン(Mn)、アルミニウム(Al)およびゲルマニウム(Ge)のうちの少なくとも1つ以上を含む銅合金からなる層を形成して重層構造とする、請求項9に記載の銅配線形成方法。
- 上記珪素よりも酸化されやすい金属元素は、スカンジウム(Sc)、チタン(Ti)、バナジウム(V)、クロム(Cr)、イットリウム(Y)、ジルコニウム(Zr)、ニオブ(Nb)、アンチモン(Sb)、ハフニウム(Hf)、タンタル(Ta)、およびレニウム(Re)の少なくとも何れか1つである、請求項13に記載の銅配線形成方法。
- 上記珪素よりも酸化されやすい金属元素は、チタン(Ti)又はタンタル(Ta)である、請求項13に記載の銅配線形成方法。
- 上記銅合金被膜形成工程は、銅合金被膜を450K以下の温度で被着し、加熱処理工程は、その銅合金被膜の被着温度を超える温度で加熱処理を行う、請求項1から15の何れか1項に記載の銅配線形成方法。
- 上記加熱処理工程は、流量を毎分0.1リットル以上で、毎分5.0リットル以下としたアルゴン(Ar)気流中で、600K(327℃)以上、700K(427℃)以下の温度で1分以上、80分以下の時間で行う、請求項1から15の何れか1項に記載の銅配線形成方法。
- 絶縁層に銅からなる配線本体を備えてなる銅配線において、
珪素(Si)を含む絶縁層と、
上記絶縁層に設けられた溝状の開口部内に形成された、銅(Cu)からなる配線本体と、
上記絶縁層と配線本体との間に形成された、銅(Cu)より酸化されやすい金属元素として、マグネシウム(Mg)、マンガン(Mn)、アルミニウム(Al)およびゲルマニウム(Ge)のうちの少なくとも1つ以上を含むバリア層と、を有し、
上記バリア層は、その形成時に、表面を構成する結晶面が、銅の{100}、{111}および{311}の各面から{311}面が除去された結晶面を有し、その銅の結晶面の種類が減少した表面に配線本体が設けられている、
ことを特徴とする銅配線。 - 上記バリア層は、絶縁層側に銅より酸化されやすい金属元素として、マグネシウム(Mg)、マンガン(Mn)、アルミニウム(Al)およびゲルマニウム(Ge)のうちの少なくとも1つ以上が集中的に蓄積し、当該バリア層表面側に向けて銅の原子濃度が増加している、請求項18に記載の銅配線。
- 上記バリア層は、表面が銅の{200}X線回折ピークの強度よりも大きな強度の銅の{111}X線回折ピークを示す、請求項18または19に記載の銅配線。
- 上記バリア層は、表面が銅の{200}X線回折ピークの強度よりも8倍以上大きな強度の銅の{111}X線回折ピークを示す、請求項20に記載の銅配線。
- 上記バリア層の銅より酸化されやすい金属元素がマンガン(Mn)である、請求項18から21の何れか1項に記載の銅配線。
- 上記バリア層は、絶縁層側にゲルマニウムを含む、請求項18から22の何れか1項に記載の銅配線。
- 上記バリア層は、絶縁層側に珪素よりも酸化されやすい金属元素を含む、請求項18から23の何れか1項に記載の銅配線。
- 上記珪素よりも酸化されやすい金属元素は、スカンジウム(Sc)、チタン(Ti)、バナジウム(V)、クロム(Cr)、イットリウム(Y)、ジルコニウム(Zr)、ニオブ(Nb)、アンチモン(Sb)、ハフニウム(Hf)、タンタル(Ta)、およびレニウム(Re)の少なくとも何れか1つである、請求項24に記載の銅配線。
- 上記珪素よりも酸化されやすい金属元素は、チタン(Ti)又はタンタル(Ta)である、請求項24に記載の銅配線。
- 絶縁層に銅配線を回路配線として備えた半導体装置において、
上記銅配線が請求項18から26の何れか1項に記載の銅配線である、
ことを特徴とする半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008324061A JP4441658B1 (ja) | 2008-12-19 | 2008-12-19 | 銅配線形成方法、銅配線および半導体装置 |
US12/589,849 US8112885B2 (en) | 2008-12-19 | 2009-10-28 | Method for forming copper interconnection structures |
US12/589,949 US8169079B2 (en) | 2008-12-19 | 2009-10-30 | Copper interconnection structures and semiconductor devices |
TW098143422A TWI450361B (zh) | 2008-12-19 | 2009-12-17 | 形成銅互連結構之方法 |
US13/252,033 US9082821B2 (en) | 2008-12-19 | 2011-10-03 | Method for forming copper interconnection structures |
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US10068181B1 (en) * | 2015-04-27 | 2018-09-04 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
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JP6975584B2 (ja) | 2017-09-07 | 2021-12-01 | 東京エレクトロン株式会社 | 半導体装置 |
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TWI755797B (zh) * | 2020-04-28 | 2022-02-21 | 國立中央大學 | 高亮度單極化輸出面射型雷射陣列 |
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US8169079B2 (en) | 2012-05-01 |
JP2010147311A (ja) | 2010-07-01 |
TWI450361B (zh) | 2014-08-21 |
US9082821B2 (en) | 2015-07-14 |
TW201034119A (en) | 2010-09-16 |
US20100155952A1 (en) | 2010-06-24 |
US20120021603A1 (en) | 2012-01-26 |
US8112885B2 (en) | 2012-02-14 |
US20100154213A1 (en) | 2010-06-24 |
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