JP4438422B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4438422B2
JP4438422B2 JP2004012371A JP2004012371A JP4438422B2 JP 4438422 B2 JP4438422 B2 JP 4438422B2 JP 2004012371 A JP2004012371 A JP 2004012371A JP 2004012371 A JP2004012371 A JP 2004012371A JP 4438422 B2 JP4438422 B2 JP 4438422B2
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Japan
Prior art keywords
layer
film
semiconductor light
emitting device
type
Prior art date
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Expired - Fee Related
Application number
JP2004012371A
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English (en)
Japanese (ja)
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JP2005209733A (ja
JP2005209733A5 (enrdf_load_stackoverflow
Inventor
宏司 本浄
宏一郎 出口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2004012371A priority Critical patent/JP4438422B2/ja
Publication of JP2005209733A publication Critical patent/JP2005209733A/ja
Publication of JP2005209733A5 publication Critical patent/JP2005209733A5/ja
Application granted granted Critical
Publication of JP4438422B2 publication Critical patent/JP4438422B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2004012371A 2004-01-20 2004-01-20 半導体発光素子 Expired - Fee Related JP4438422B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004012371A JP4438422B2 (ja) 2004-01-20 2004-01-20 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004012371A JP4438422B2 (ja) 2004-01-20 2004-01-20 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2005209733A JP2005209733A (ja) 2005-08-04
JP2005209733A5 JP2005209733A5 (enrdf_load_stackoverflow) 2007-03-01
JP4438422B2 true JP4438422B2 (ja) 2010-03-24

Family

ID=34898762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004012371A Expired - Fee Related JP4438422B2 (ja) 2004-01-20 2004-01-20 半導体発光素子

Country Status (1)

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JP (1) JP4438422B2 (enrdf_load_stackoverflow)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100661614B1 (ko) * 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
JP2007109713A (ja) * 2005-10-11 2007-04-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2007149966A (ja) * 2005-11-28 2007-06-14 Fujikura Ltd 発光素子
US8022419B2 (en) 2005-12-19 2011-09-20 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp
JP2007173269A (ja) * 2005-12-19 2007-07-05 Showa Denko Kk フリップチップ型半導体発光素子、フリップチップ型半導体発光素子の製造方法、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ
JP5047516B2 (ja) * 2006-03-23 2012-10-10 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ
JP2007273844A (ja) * 2006-03-31 2007-10-18 Matsushita Electric Ind Co Ltd 半導体素子
JP2008047854A (ja) * 2006-07-19 2008-02-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
WO2008041770A1 (en) * 2006-10-05 2008-04-10 Mitsubishi Chemical Corporation LIGHT EMITTING DEVICE USING GaN LED CHIP
JP5251050B2 (ja) * 2006-10-05 2013-07-31 三菱化学株式会社 ＧａＮ系ＬＥＤチップおよび発光装置
JP2008112979A (ja) * 2006-10-05 2008-05-15 Mitsubishi Cable Ind Ltd ＧａＮ系ＬＥＤチップおよび発光装置
KR20090085594A (ko) 2006-10-05 2009-08-07 미쓰비시 가가꾸 가부시키가이샤 ＧａＮ 계 ＬＥＤ 칩을 사용하여 이루어지는 발광 장치
JP2008112978A (ja) * 2006-10-05 2008-05-15 Mitsubishi Cable Ind Ltd ＧａＮ系ＬＥＤチップおよび発光装置
JP5237274B2 (ja) * 2007-06-28 2013-07-17 京セラ株式会社 発光素子及び照明装置
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
JP5515431B2 (ja) * 2008-06-16 2014-06-11 豊田合成株式会社 半導体発光素子、その電極並びに製造方法及びランプ
CN102124574B (zh) 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯
WO2009154191A1 (ja) * 2008-06-16 2009-12-23 昭和電工株式会社 半導体発光素子、その電極並びに製造方法及びランプ
JP2010238802A (ja) * 2009-03-30 2010-10-21 Showa Denko Kk 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法
JP2010147097A (ja) * 2008-12-16 2010-07-01 Showa Denko Kk 半導体素子および半導体素子の製造方法
KR101257572B1 (ko) * 2008-12-15 2013-04-23 도요타 고세이 가부시키가이샤 반도체 발광 소자
JP2010141262A (ja) * 2008-12-15 2010-06-24 Showa Denko Kk 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法
EP2369645A4 (en) 2010-01-18 2012-11-14 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
WO2014150800A1 (en) * 2013-03-15 2014-09-25 Glo Ab Two step transparent conductive film deposition method and gan nanowire devices made by the method
JP6532237B2 (ja) * 2015-01-30 2019-06-19 株式会社アルバック 成膜方法及び発光ダイオードの製造方法
JP7288656B2 (ja) * 2019-03-05 2023-06-08 国立研究開発法人産業技術総合研究所 ＧａＮ構造物及びその製造方法

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Publication number Publication date
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