JP2005209733A5 - - Google Patents

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Publication number
JP2005209733A5
JP2005209733A5 JP2004012371A JP2004012371A JP2005209733A5 JP 2005209733 A5 JP2005209733 A5 JP 2005209733A5 JP 2004012371 A JP2004012371 A JP 2004012371A JP 2004012371 A JP2004012371 A JP 2004012371A JP 2005209733 A5 JP2005209733 A5 JP 2005209733A5
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JP
Japan
Prior art keywords
semiconductor light
contact layer
type contact
conductive oxide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004012371A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005209733A (ja
JP4438422B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004012371A priority Critical patent/JP4438422B2/ja
Priority claimed from JP2004012371A external-priority patent/JP4438422B2/ja
Publication of JP2005209733A publication Critical patent/JP2005209733A/ja
Publication of JP2005209733A5 publication Critical patent/JP2005209733A5/ja
Application granted granted Critical
Publication of JP4438422B2 publication Critical patent/JP4438422B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004012371A 2004-01-20 2004-01-20 半導体発光素子 Expired - Fee Related JP4438422B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004012371A JP4438422B2 (ja) 2004-01-20 2004-01-20 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004012371A JP4438422B2 (ja) 2004-01-20 2004-01-20 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2005209733A JP2005209733A (ja) 2005-08-04
JP2005209733A5 true JP2005209733A5 (enrdf_load_stackoverflow) 2007-03-01
JP4438422B2 JP4438422B2 (ja) 2010-03-24

Family

ID=34898762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004012371A Expired - Fee Related JP4438422B2 (ja) 2004-01-20 2004-01-20 半導体発光素子

Country Status (1)

Country Link
JP (1) JP4438422B2 (enrdf_load_stackoverflow)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100661614B1 (ko) * 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
JP2007109713A (ja) * 2005-10-11 2007-04-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2007149966A (ja) * 2005-11-28 2007-06-14 Fujikura Ltd 発光素子
US8022419B2 (en) 2005-12-19 2011-09-20 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp
JP2007173269A (ja) * 2005-12-19 2007-07-05 Showa Denko Kk フリップチップ型半導体発光素子、フリップチップ型半導体発光素子の製造方法、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ
JP5047516B2 (ja) * 2006-03-23 2012-10-10 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ
JP2007273844A (ja) * 2006-03-31 2007-10-18 Matsushita Electric Ind Co Ltd 半導体素子
JP2008047854A (ja) * 2006-07-19 2008-02-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
WO2008041770A1 (en) * 2006-10-05 2008-04-10 Mitsubishi Chemical Corporation LIGHT EMITTING DEVICE USING GaN LED CHIP
JP5251050B2 (ja) * 2006-10-05 2013-07-31 三菱化学株式会社 ＧａＮ系ＬＥＤチップおよび発光装置
JP2008112979A (ja) * 2006-10-05 2008-05-15 Mitsubishi Cable Ind Ltd ＧａＮ系ＬＥＤチップおよび発光装置
KR20090085594A (ko) 2006-10-05 2009-08-07 미쓰비시 가가꾸 가부시키가이샤 ＧａＮ 계 ＬＥＤ 칩을 사용하여 이루어지는 발광 장치
JP2008112978A (ja) * 2006-10-05 2008-05-15 Mitsubishi Cable Ind Ltd ＧａＮ系ＬＥＤチップおよび発光装置
JP5237274B2 (ja) * 2007-06-28 2013-07-17 京セラ株式会社 発光素子及び照明装置
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
JP5515431B2 (ja) * 2008-06-16 2014-06-11 豊田合成株式会社 半導体発光素子、その電極並びに製造方法及びランプ
CN102124574B (zh) 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯
WO2009154191A1 (ja) * 2008-06-16 2009-12-23 昭和電工株式会社 半導体発光素子、その電極並びに製造方法及びランプ
JP2010238802A (ja) * 2009-03-30 2010-10-21 Showa Denko Kk 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法
JP2010147097A (ja) * 2008-12-16 2010-07-01 Showa Denko Kk 半導体素子および半導体素子の製造方法
KR101257572B1 (ko) * 2008-12-15 2013-04-23 도요타 고세이 가부시키가이샤 반도체 발광 소자
JP2010141262A (ja) * 2008-12-15 2010-06-24 Showa Denko Kk 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法
EP2369645A4 (en) 2010-01-18 2012-11-14 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
WO2014150800A1 (en) * 2013-03-15 2014-09-25 Glo Ab Two step transparent conductive film deposition method and gan nanowire devices made by the method
JP6532237B2 (ja) * 2015-01-30 2019-06-19 株式会社アルバック 成膜方法及び発光ダイオードの製造方法
JP7288656B2 (ja) * 2019-03-05 2023-06-08 国立研究開発法人産業技術総合研究所 ＧａＮ構造物及びその製造方法

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