JP4394835B2 - 低パワー集積回路用高速オンチップ電圧発生器 - Google Patents
低パワー集積回路用高速オンチップ電圧発生器 Download PDFInfo
- Publication number
- JP4394835B2 JP4394835B2 JP2000582864A JP2000582864A JP4394835B2 JP 4394835 B2 JP4394835 B2 JP 4394835B2 JP 2000582864 A JP2000582864 A JP 2000582864A JP 2000582864 A JP2000582864 A JP 2000582864A JP 4394835 B2 JP4394835 B2 JP 4394835B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- boost
- voltage
- coupled
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007704 transition Effects 0.000 claims description 62
- 239000003990 capacitor Substances 0.000 claims description 55
- 238000001514 detection method Methods 0.000 claims description 35
- 230000004044 response Effects 0.000 claims description 10
- 238000007667 floating Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1998/024766 WO2000029919A1 (en) | 1998-11-18 | 1998-11-18 | Rapid on chip voltage generation for low power integrated circuits |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003517719A JP2003517719A (ja) | 2003-05-27 |
JP2003517719A5 JP2003517719A5 (de) | 2006-02-16 |
JP4394835B2 true JP4394835B2 (ja) | 2010-01-06 |
Family
ID=22268334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000582864A Expired - Lifetime JP4394835B2 (ja) | 1998-11-18 | 1998-11-18 | 低パワー集積回路用高速オンチップ電圧発生器 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1151365B1 (de) |
JP (1) | JP4394835B2 (de) |
CN (1) | CN1148621C (de) |
DE (1) | DE69823888T2 (de) |
HK (1) | HK1042954A1 (de) |
WO (1) | WO2000029919A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6646950B2 (en) * | 2001-04-30 | 2003-11-11 | Fujitsu Limited | High speed decoder for flash memory |
JP4142685B2 (ja) * | 2003-06-05 | 2008-09-03 | スパンション エルエルシー | 冗長メモリのブースタ回路を有する半導体メモリ |
CN1323434C (zh) * | 2003-09-02 | 2007-06-27 | 台湾积体电路制造股份有限公司 | 整合闪存与高电压组件的制造方法 |
US7466620B2 (en) * | 2006-01-04 | 2008-12-16 | Baker Mohammad | System and method for low power wordline logic for a memory |
US7529117B2 (en) * | 2007-03-07 | 2009-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Design solutions for integrated circuits with triple gate oxides |
CN101620886B (zh) * | 2008-07-02 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 用于闪存器件的字线增压器 |
JP5808937B2 (ja) * | 2011-04-20 | 2015-11-10 | ラピスセミコンダクタ株式会社 | 半導体メモリの内部電源電圧生成回路及び内部電源電圧生成方法 |
CN108958639B (zh) * | 2017-05-19 | 2021-07-06 | 华邦电子股份有限公司 | 快闪存储器存储装置 |
JP2021149999A (ja) | 2020-03-23 | 2021-09-27 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910004737B1 (ko) * | 1988-12-19 | 1991-07-10 | 삼성전자 주식회사 | 백바이어스전압 발생회로 |
KR0172337B1 (ko) * | 1995-11-13 | 1999-03-30 | 김광호 | 반도체 메모리장치의 내부승압전원 발생회로 |
US5708387A (en) * | 1995-11-17 | 1998-01-13 | Advanced Micro Devices, Inc. | Fast 3-state booster-circuit |
JPH09320267A (ja) * | 1996-05-28 | 1997-12-12 | Oki Micro Design Miyazaki:Kk | 昇圧回路の駆動方法および昇圧回路 |
-
1998
- 1998-11-18 WO PCT/US1998/024766 patent/WO2000029919A1/en active IP Right Grant
- 1998-11-18 EP EP98960305A patent/EP1151365B1/de not_active Expired - Lifetime
- 1998-11-18 CN CNB988143682A patent/CN1148621C/zh not_active Expired - Lifetime
- 1998-11-18 JP JP2000582864A patent/JP4394835B2/ja not_active Expired - Lifetime
- 1998-11-18 DE DE69823888T patent/DE69823888T2/de not_active Expired - Lifetime
-
2002
- 2002-06-13 HK HK02104437A patent/HK1042954A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1151365A1 (de) | 2001-11-07 |
CN1148621C (zh) | 2004-05-05 |
CN1327552A (zh) | 2001-12-19 |
DE69823888D1 (de) | 2004-06-17 |
EP1151365A4 (de) | 2002-01-30 |
JP2003517719A (ja) | 2003-05-27 |
HK1042954A1 (en) | 2002-08-30 |
WO2000029919A1 (en) | 2000-05-25 |
DE69823888T2 (de) | 2004-10-21 |
EP1151365B1 (de) | 2004-05-12 |
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