JP4386978B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4386978B2
JP4386978B2 JP22388398A JP22388398A JP4386978B2 JP 4386978 B2 JP4386978 B2 JP 4386978B2 JP 22388398 A JP22388398 A JP 22388398A JP 22388398 A JP22388398 A JP 22388398A JP 4386978 B2 JP4386978 B2 JP 4386978B2
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Japan
Prior art keywords
film
semiconductor
protective film
gate wiring
gate
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Expired - Fee Related
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JP22388398A
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English (en)
Japanese (ja)
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JP2000058841A (ja
JP2000058841A5 (enExample
Inventor
舜平 山崎
節男 中嶋
律子 河崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP22388398A priority Critical patent/JP4386978B2/ja
Priority to US09/363,954 priority patent/US6380011B1/en
Publication of JP2000058841A publication Critical patent/JP2000058841A/ja
Priority to US11/388,476 priority patent/US7351617B2/en
Publication of JP2000058841A5 publication Critical patent/JP2000058841A5/ja
Application granted granted Critical
Publication of JP4386978B2 publication Critical patent/JP4386978B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP22388398A 1998-08-07 1998-08-07 半導体装置の作製方法 Expired - Fee Related JP4386978B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP22388398A JP4386978B2 (ja) 1998-08-07 1998-08-07 半導体装置の作製方法
US09/363,954 US6380011B1 (en) 1998-08-07 1999-07-29 Semiconductor device and a method of manufacturing the same
US11/388,476 US7351617B2 (en) 1998-08-07 2002-04-08 Semiconductor device and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22388398A JP4386978B2 (ja) 1998-08-07 1998-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000058841A JP2000058841A (ja) 2000-02-25
JP2000058841A5 JP2000058841A5 (enExample) 2005-10-27
JP4386978B2 true JP4386978B2 (ja) 2009-12-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP22388398A Expired - Fee Related JP4386978B2 (ja) 1998-08-07 1998-08-07 半導体装置の作製方法

Country Status (2)

Country Link
US (2) US6380011B1 (enExample)
JP (1) JP4386978B2 (enExample)

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TW408351B (en) * 1997-10-17 2000-10-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2001051292A (ja) * 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
US6261881B1 (en) 1998-08-21 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
JP4493741B2 (ja) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6493048B1 (en) * 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6909411B1 (en) 1999-07-23 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Display device and method for operating the same
JP2001109014A (ja) * 1999-10-05 2001-04-20 Hitachi Ltd アクティブマトリクス型液晶表示装置
US6524877B1 (en) 1999-10-26 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of fabricating the same
JP2001345454A (ja) * 2000-03-27 2001-12-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001298192A (ja) * 2000-04-13 2001-10-26 Seiko Epson Corp 半導体装置およびその製造方法
JP2001298193A (ja) 2000-04-13 2001-10-26 Seiko Epson Corp 半導体装置およびその製造方法
JP4993822B2 (ja) * 2000-06-19 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7456911B2 (en) * 2000-08-14 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7430025B2 (en) * 2000-08-23 2008-09-30 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
JP2002141514A (ja) * 2000-11-07 2002-05-17 Sanyo Electric Co Ltd ボトムゲート型薄膜トランジスタ及びその製造方法
JP2002231959A (ja) * 2001-02-01 2002-08-16 Sony Corp 薄膜トランジスタ
US6982194B2 (en) * 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2003059858A (ja) * 2001-08-09 2003-02-28 Sony Corp レーザアニール装置及び薄膜トランジスタの製造方法
KR100961941B1 (ko) 2003-01-03 2010-06-08 삼성전자주식회사 다중 도메인 액정 표시 장치용 박막 트랜지스터 표시판
US7491590B2 (en) 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
WO2007099690A1 (ja) * 2006-02-28 2007-09-07 Pioneer Corporation 有機トランジスタ及びその製造方法
JP5245287B2 (ja) 2007-05-18 2013-07-24 ソニー株式会社 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法
US8253174B2 (en) * 2008-11-26 2012-08-28 Palo Alto Research Center Incorporated Electronic circuit structure and method for forming same
US8274084B2 (en) * 2008-11-26 2012-09-25 Palo Alto Research Center Incorporated Method and structure for establishing contacts in thin film transistor devices
US8624330B2 (en) 2008-11-26 2014-01-07 Palo Alto Research Center Incorporated Thin film transistors and high fill factor pixel circuits and methods for forming same
JP5147794B2 (ja) * 2009-08-04 2013-02-20 株式会社半導体エネルギー研究所 表示装置の作製方法及び電子書籍の作製方法
KR101712340B1 (ko) * 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
US8895375B2 (en) * 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
KR101283008B1 (ko) * 2010-12-23 2013-07-05 주승기 트렌치형상의 구리 하부 게이트 구조를 갖는 다결정 실리콘 박막 트랜지스터의 제조방법
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9257290B2 (en) * 2013-12-25 2016-02-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film transistor and manufacturing method thereof

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JPS62104171A (ja) 1985-10-31 1987-05-14 Fujitsu Ltd 薄膜トランジスタの製造方法
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
JPH01184928A (ja) 1988-01-20 1989-07-24 Toshiba Corp 薄膜形成方法
TW237562B (enExample) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
JPH06132536A (ja) * 1992-10-14 1994-05-13 Sharp Corp 薄膜トランジスタ
US5385854A (en) * 1993-07-15 1995-01-31 Micron Semiconductor, Inc. Method of forming a self-aligned low density drain inverted thin film transistor
US5492843A (en) * 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
US5641974A (en) * 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
US5650358A (en) * 1995-08-28 1997-07-22 Ois Optical Imaging Systems, Inc. Method of making a TFT having a reduced channel length
JP3317387B2 (ja) * 1996-06-03 2002-08-26 シャープ株式会社 アクティブマトリクス基板およびその製造方法
US5880018A (en) * 1996-10-07 1999-03-09 Motorola Inc. Method for manufacturing a low dielectric constant inter-level integrated circuit structure
JP3830623B2 (ja) * 1997-07-14 2006-10-04 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
JPH11102867A (ja) * 1997-07-16 1999-04-13 Sony Corp 半導体薄膜の形成方法およびプラスチック基板
US6011274A (en) * 1997-10-20 2000-01-04 Ois Optical Imaging Systems, Inc. X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween

Also Published As

Publication number Publication date
JP2000058841A (ja) 2000-02-25
US20060163580A1 (en) 2006-07-27
US7351617B2 (en) 2008-04-01
US6380011B1 (en) 2002-04-30

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