JP4383982B2 - 有機電界発光層の蒸着源 - Google Patents
有機電界発光層の蒸着源 Download PDFInfo
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- JP4383982B2 JP4383982B2 JP2004228309A JP2004228309A JP4383982B2 JP 4383982 B2 JP4383982 B2 JP 4383982B2 JP 2004228309 A JP2004228309 A JP 2004228309A JP 2004228309 A JP2004228309 A JP 2004228309A JP 4383982 B2 JP4383982 B2 JP 4383982B2
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- 230000008021 deposition Effects 0.000 title claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 102
- 239000000463 material Substances 0.000 claims description 64
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 238000007599 discharging Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
ポイント蒸着源と線形蒸着源は、蒸着工程の条件、基板の条件又は形成される蒸着膜の形態等を考慮して、その使用が決められる。以下では、便宜上ポイント蒸着源を例に挙げて説明する。
一方、蓋の上部表面には蓋の開口と対応する位置に開口が形成された熱遮断層が形成され、この熱遮断層によって蓋に伝えられた熱は外部へ放出されずセルキャップに伝えられる。
このような形態で設けられた熱遮断板16の機能は、セルキャップ12の熱が外部へ発散されるのを防止するものである。
熱遮断板16は、その目的上、例えば、SUS系の材料又はタンタルのような熱伝達率の低い材料のものが好ましい。
以上のような本実施例に係る蒸着源は、蒸着源のセルキャップと金属性の蓋と間の空間に熱伝導率の低い材料からなる遮断板を配置することで、セルキャップから外部へ発散される熱を遮断し、セルキャップに熱を伝達させて開口周辺の温度を適切に保持することができる。したがって、開口を介して外部へ排出される蒸気が温度低下によって、開口周辺に凝固する現象を效果的に防止することができる。
蒸着源の内部空間からセルキャップ22及び蓋25に伝えられた熱は、下部リフレクター26によって外部への発散が遮断され、セルキャップ22は、ある程度の温度を保持するようになる。ここで、上部リフレクター27は、多数の垂直突起27Bによって下部リフレクター26と所定の間隔を維持しているため、下部リフレクター26に伝えられた熱は、上部リフレクター27には伝えられない。特に、上部リフレクター27底面の多数の垂直突起27Bと下部リフレクター26の各凹部26Bとは点接触をなすので、上部リフレクター27に伝えられる熱の量は極めて微量である。
熱遮断層46に形成された開口46Aのサイズを、蓋42に形成された開口42Aサイズより小さく形成する場合、蒸気排出用開口42Aを介して外部へ排出される有機物蒸気が熱遮断層46の開口46Aに接触することで、熱遮断層46の開口46A周辺に蒸発した有機物質が堆積することになる。
また、熱遮断層46に形成された開口46Aサイズが、蓋45に形成された開口45Aサイズと同サイズで構成された場合、蒸着材料の蒸気が外部へ排出される過程で、蒸着材料の蒸気が熱遮断層46に付着することを防止するため、熱遮断層46の厚さをその開口46Aに向かって順次減少させることが好ましい。これにより、開口46Aの縁は鋭いエッジを形成することになる。
さらに、蓋の上部面に熱遮断層を形成することで蓋から外部へ放出される熱を遮断し、セルキャップの開口周辺の温度が一定に保持される効果を有する。
11,21,31,41 セル
12,22,32,42 セルキャップ
12A,22A,32A,42A 蒸着材料の蒸気排出用開口
13,23,33 側壁部材
13A,23A,33A,43A 加熱手段
14 底部材
15,25,45 蓋
16 熱遮断板
26 下部リフレクター
26b 凹部
27 上部リフレクター
27b 垂直突起
35 リフレクター
46 熱者断層
M 蒸着材料
Claims (4)
- 印加された電源によって加熱され、その内部に収納された蒸着材料を加熱し、発生した蒸着材料の蒸気を外部へ放出させて基板表面に蒸着層を形成する蒸着源において、
内部に蒸着材料が収納されているセルと、
セル上部に設けられ、蒸着材料の蒸気排出用開口が形成されたセルキャップと、
セル外側に位置し、セル外側に設けられた加熱手段を支持する側壁部材と、
側壁部材上端に固定された状態で前記セルキャップ上に配置され、セルキャップに形成された前記蒸気排出用開口と対応する開口が形成された蓋と、
中心部には前記セルキャップ及び蓋に形成された開口と対応する開口が形成され、前記蓋上に積層された状態で配置されて蓋外部へ熱が放出されるのを防止する上部及び下部リフレクターと、
を含み、
前記上部リフレクターの底面には多数の突起が形成され、前記下部リフレクターの上部には、対応する上部リフレクターの各突起を収容する多数の凹部が形成されている
蒸着源。 - 前記下部リフレクターの各凹部は、円周方向に長軸を、半径方向に短軸を有する楕円形である請求項1に記載の蒸着源。
- 前記上部リフレクターの各突起は、前記下部リフレクターの各凹部と点接触をなす請求項1に記載の蒸着源。
- 上部リフレクター底面の垂直突起と上部リフレクター表面の凹部が少なくとも3つ以上形成されている請求項1に記載の蒸着源。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030053761A KR100656820B1 (ko) | 2003-08-04 | 2003-08-04 | 유기 전계 발광층 증착용 증착원 |
KR1020030056606A KR100656845B1 (ko) | 2003-08-14 | 2003-08-14 | 유기 전계 발광층 증착용 증착원 |
KR1020030061351A KR100662624B1 (ko) | 2003-09-03 | 2003-09-03 | 낮은 열전달율을 갖는 리플렉터 및 이를 포함하는 유기전계 발광층 증착용 증착원 |
KR1020030061352A KR100656535B1 (ko) | 2003-09-03 | 2003-09-03 | 열 차단층을 포함하는 유기 전계 발광층 증착용 증착원 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008139740A Division JP4988650B2 (ja) | 2003-08-04 | 2008-05-28 | 有機電界発光層の蒸着源 |
Publications (2)
Publication Number | Publication Date |
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JP2005054270A JP2005054270A (ja) | 2005-03-03 |
JP4383982B2 true JP4383982B2 (ja) | 2009-12-16 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2004228309A Active JP4383982B2 (ja) | 2003-08-04 | 2004-08-04 | 有機電界発光層の蒸着源 |
JP2008139740A Active JP4988650B2 (ja) | 2003-08-04 | 2008-05-28 | 有機電界発光層の蒸着源 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008139740A Active JP4988650B2 (ja) | 2003-08-04 | 2008-05-28 | 有機電界発光層の蒸着源 |
Country Status (4)
Country | Link |
---|---|
US (4) | US20050039684A1 (ja) |
EP (3) | EP2369035B9 (ja) |
JP (2) | JP4383982B2 (ja) |
CN (1) | CN100340695C (ja) |
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JP4988650B2 (ja) | 2012-08-01 |
JP2008261056A (ja) | 2008-10-30 |
EP2381011B1 (en) | 2012-12-05 |
US20060288941A1 (en) | 2006-12-28 |
EP2369035B1 (en) | 2014-02-26 |
CN100340695C (zh) | 2007-10-03 |
EP2369035B9 (en) | 2014-05-21 |
EP1505167B1 (en) | 2014-09-17 |
US20050039684A1 (en) | 2005-02-24 |
US20060288940A1 (en) | 2006-12-28 |
US8562741B2 (en) | 2013-10-22 |
CN1590581A (zh) | 2005-03-09 |
US7359630B2 (en) | 2008-04-15 |
EP1505167A2 (en) | 2005-02-09 |
US7641737B2 (en) | 2010-01-05 |
JP2005054270A (ja) | 2005-03-03 |
EP2369035A1 (en) | 2011-09-28 |
EP2381011A1 (en) | 2011-10-26 |
US20060288939A1 (en) | 2006-12-28 |
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