JP4369378B2 - 半導体ウェーハ、該半導体ウェーハを製造するための装置および方法 - Google Patents
半導体ウェーハ、該半導体ウェーハを製造するための装置および方法 Download PDFInfo
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- JP4369378B2 JP4369378B2 JP2005031112A JP2005031112A JP4369378B2 JP 4369378 B2 JP4369378 B2 JP 4369378B2 JP 2005031112 A JP2005031112 A JP 2005031112A JP 2005031112 A JP2005031112 A JP 2005031112A JP 4369378 B2 JP4369378 B2 JP 4369378B2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/14—Zonally-graded wheels; Composite wheels comprising different abrasives
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Description
a)単結晶シリコンインゴットの製造(結晶成長)
b)シリコンインゴットの、個々のウェーハへの分断(「スライシング」、「ソーイング」)
c)機械的な加工(メカニカル加工)
d)化学的な加工(ケミカル加工)
e)化学機械的な加工(ケモメカニカル加工)
f)場合によってはコーティング。
(1)切断→エッジラウンディング→DDDG→精密ポリシングの各ステップ、
(2)切断→DDDG→エッジラウンディング→精密ポリシングの各ステップ
を有する2つのコア手順に分けられる。
本発明によるDDDG法の使用例として、以下のプロセスパラメータが有利であることが明らかにされる:
粗研削時では、このことは、4〜50μmの粒度と、セラミックまたは金属により結合された砥粒(Abrasiv)としてのダイヤモンドとを有する、内側の部分スピンドルまたは外側の部分スピンドルによって保持された研削砥石、1000〜12000r.p.m.のスピンドル回転数および15〜300μm/分(両スピンドルに関して)のスピンドル送り速度における2×20μm〜2×60μmの研削除去量ならびに5〜100r.p.m.の半導体ウェーハの回転数および0.1〜5リットル/分の水を用いた冷却潤滑である。結果は250〜3000Å RMS(1〜80μm)の粗さおよび0.7〜3μm(粗研削時の、同軸的に配置されたダブルスピンドルを用いた方法の場合)の厚さむらTTV(total thickness variation)を有する、粗研削された面を備えた半導体ウェーハである。
2A,2B 粗研削スピンドル
3A,3B 精密研削スピンドル
4A,4B 研削砥石
5A,5B 研削パッド
6A,6B 研削砥石
7A,7B 研削パッド
8 半導体ウェーハ
9 支持リング
10A,10B 側壁
11A,11B ウォータクッションまたはエアクッション
12 リング
13 真空
14 粗研削目標厚さ
15 精密研削目標厚さ
16 目標形状
17 点接触
18A,18B 引戻し量
19A,19B 送り量
20A,20B 測定手段
21A,21B 角度
22 真空
Claims (10)
- 半導体ウェーハを製造するための方法において、半導体ウェーハを、最初は粗研削砥石を用いて、引き続き精密研削砥石を用いて両面同時に研削し、半導体ウェーハを粗研削砥石および精密研削砥石によって研削する間、該半導体ウェーハを自由にフローティングするように保持し、粗研削砥石を用いた半導体ウェーハの粗研削から、精密研削砥石を用いた半導体ウェーハの精密研削への移行時に、精密研削砥石を半導体ウェーハの表側と裏側とに係合させて、半導体ウェーハを軸方向で案内する収容クッションの間での、応力なしの中央位置から半導体ウェーハが離脱しないようにし、粗研削砥石を用いた半導体ウェーハの粗研削から、精密研削砥石を用いた半導体ウェーハの精密研削への移行時に、粗研削砥石および精密研削砥石を、一定の負荷をかけて半導体ウェーハに係合させることを特徴とする、半導体ウェーハを製造するための方法。
- それぞれ粗研削砥石と精密研削砥石とを備えた2つのダブルスピンドルの間で半導体ウェーハを研削する、請求項1記載の方法。
- 半導体ウェーハを両面同時研削の後で研磨する、請求項1または2記載の方法。
- 半導体ウェーハのエッジを両面同時研削の前または後にエッジラウンディングする、請求項1から3までのいずれか1項記載の方法。
- 半導体ウェーハを両面同時研削の後にエッチング剤で処理し、半導体ウェーハの片面または両面から材料を除去する、請求項1から4までのいずれか1項記載の方法。
- 半導体ウェーハを粗研削砥石によって研削して非プレーナな中間形状を形成し、精密研削砥石によってプレーナなウェーハを形成する、請求項1から5までのいずれか1項記載の方法。
- 両面同時研削の後に半導体ウェーハの形状偏差を局所的に後加工する、請求項1から6までのいずれか1項記載の方法。
- 半導体ウェーハに両面同時研削の後に、材料除去ポリシングと精密ポリシングとを施す、請求項1から7までのいずれか1項記載の方法。
- 材料除去ポリシングを両面ポリシングまたは片面ポリシングとして実施する、請求項8記載の方法。
- 材料除去ポリシングを、半導体ウェーハの裏面のポリシングとしてのみ実施する、請求項8記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004005702A DE102004005702A1 (de) | 2004-02-05 | 2004-02-05 | Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005223344A JP2005223344A (ja) | 2005-08-18 |
JP4369378B2 true JP4369378B2 (ja) | 2009-11-18 |
Family
ID=34813136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005031112A Expired - Fee Related JP4369378B2 (ja) | 2004-02-05 | 2005-02-07 | 半導体ウェーハ、該半導体ウェーハを製造するための装置および方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20050173377A1 (ja) |
JP (1) | JP4369378B2 (ja) |
KR (2) | KR100653345B1 (ja) |
CN (1) | CN100421223C (ja) |
DE (1) | DE102004005702A1 (ja) |
TW (1) | TWI299689B (ja) |
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TWI299689B (en) | 2008-08-11 |
KR100653345B1 (ko) | 2006-12-01 |
KR20060084408A (ko) | 2006-07-24 |
US20050173377A1 (en) | 2005-08-11 |
CN1652307A (zh) | 2005-08-10 |
CN100421223C (zh) | 2008-09-24 |
US20090203297A1 (en) | 2009-08-13 |
KR100717208B1 (ko) | 2007-05-11 |
DE102004005702A1 (de) | 2005-09-01 |
JP2005223344A (ja) | 2005-08-18 |
US7867059B2 (en) | 2011-01-11 |
KR20060042935A (ko) | 2006-05-15 |
TW200526361A (en) | 2005-08-16 |
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